SQ7415AENW www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET -60 RDS(on) (Ω) at VGS = -10 V 0.065 • Low thermal resistance PowerPAK® 1212-8W package with 1.07 mm profile RDS(on) (Ω) at VGS = -4.5 V 0.090 • AEC-Q101 qualified ID (A) -16 Configuration • Wettable flank terminals Single Package • 100 % Rg and UIS tested PowerPAK 1212-8W • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® 1212-8W Single D 5 D 6 D 7 D 8 S G 3. 3 m m 1 3.3 mm Top View 4 G Bottom View 3 S 2 S 1 S P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range V -16 ID -11 IS -16 IDM -64 IAS -23 EAS 26 53 PD TJ, Tstg UNIT 17 -55 to +175 Soldering Recommendations (Peak Temperature) d 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) SYMBOL PCB Mount c LIMIT RthJA 81 RthJC 2.8 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S15-2138, Rev. A, 14-Sep-15 Document Number: 76598 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ7415AENW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b VDS VGS = 0 V, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1.5 -2.0 -2.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = -60 V - - -1 VGS = 0 V VDS = -60 V, TJ = 125 °C - - -50 VGS = 0 V VDS = -60 V, TJ = 175 °C - - -150 VGS = -10 V VDS ≤ -5 V -15 - - VGS = -10 V ID = -5.7 A - 0.050 0.065 VGS = -10 V ID = -5.7 A, TJ = 125 °C - - 0.112 VGS = -10 V ID = -5.7 A, TJ = 175 °C - - 0.138 VGS = -4.5 V ID = -4.4 A, VDS = -15 V, ID = -5.7 A - 0.070 0.090 - 13 - - 1108 1385 V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss - 132 165 Reverse Transfer Capacitance Crss - 84 105 Total Gate Charge c Qg - 25.5 38 - 3.6 - - 6.7 - 3 6 9 td(on) - 9 14 tr - 9 14 - 37 56 - 8 12 Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c td(off) VGS = 0 V VGS = -10 V VDS = -25 V, f = 1 MHz VDS = -30 V, ID = -5.7 A f = 1 MHz VDD = -30 V, RL = 30 Ω ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω tf pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = -6 A, VGS = 0 V - - -64 A - -0.85 -1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-2138, Rev. A, 14-Sep-15 Document Number: 76598 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ7415AENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 18 VGS = 10 V thru 5 V 15 VGS = 4 V ID - Drain Current (A) ID - Drain Current (A) 16 12 8 4 9 TC = 25 °C 6 3 VGS = 2 V VGS = 3 V 12 TC = 125 °C 0 TC = - 55 °C 0 0 1 2 3 4 0 5 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 5 20 TC = - 55 °C 1.2 TC = 25 °C 0.8 0.4 TC = 125 °C TC = 125 °C 12 8 4 TC = - 55 °C 0.0 0 0 1 2 3 4 5 0 3 6 9 12 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 0.25 2000 0.20 1600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = 25 °C 16 gfs - Transconductance (S) ID - Drain Current (A) 1.6 0.15 0.10 VGS = 4.5 V VGS = 10 V 0.05 15 Ciss 1200 800 400 Coss 0.00 Crss 0 0 4 8 12 16 ID - Drain Current (A) On-Resistance vs. Drain Current S15-2138, Rev. A, 14-Sep-15 20 0 10 20 30 40 50 60 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 76598 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ7415AENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.5 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 5.7 A VDS = 30 V 8 6 4 2 5 10 15 20 25 30 VGS = 4.5 V 1.3 0.9 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 1.0 175 100 0.7 10 IS - Source Current (A) ID = 250 μA VGS(th) Variance (V) VGS = 10 V 1.7 0.5 - 50 - 25 0 0 ID = 5.7 A 2.1 0.4 ID = 5 mA 0.1 - 0.2 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 - 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 175 0.2 0.4 0.6 0.8 1.0 TJ - Temperature (°C) VSD - Source-to-Drain Voltage (V) Threshold Voltage Source Drain Diode Forward Voltage 0.5 1.2 - 60 VDS - Drain-to-Source Voltage (V) ID = 1 mA RDS(on) - On-Resistance (Ω) 0.4 0.3 0.2 TJ = 150 °C 0.1 - 64 - 68 - 72 - 76 TJ = 25 °C 0.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S15-2138, Rev. A, 14-Sep-15 - 80 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 76598 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ7415AENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID Limited ID - Drain Current (A) 10 100 μs 1 ms 10 ms 100 ms, 1 s,10 s, DC 1 Limited by RDS(on)* 0.1 0.01 0.01 BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S15-2138, Rev. A, 14-Sep-15 Document Number: 76598 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ7415AENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76598. S15-2138, Rev. A, 14-Sep-15 Document Number: 76598 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8 and PowerPAK 1212-8W Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK 1212-8 and PowerPAK 1212-8W packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQ7414AEN SQ7414AEN-T1-GE3 SQ7414AEN-T1_GE3 SQ7414AENW - SQ7414AENW-T1_GE3 SQ7415AEN SQ7415AEN-T1-GE3 SQ7415AEN-T1_GE3 SQ7415AENW - SQ7415AENW-T1_GE3 SQS401EN SQS401EN-T1-GE3 SQS401EN-T1_GE3 SQS401ENW - SQS401ENW-T1_GE3 SQS405EN SQS405EN-T1-GE3 SQS405EN-T1_GE3 SQS405ENW - SQS405ENW-T1_GE3 SQS420EN SQS420EN-T1-GE3 SQS420EN-T1_GE3 SQS423EN SQS423EN-T1-GE3 SQS423EN-T1_GE3 SQS460EN SQS460EN-T1-GE3 SQS460EN-T1_GE3 SQS462EN SQS462EN-T1-GE3 SQS462EN-T1_GE3 SQS482EN SQS482EN-T1-GE3 SQS482EN-T1_GE3 SQS484EN SQS484EN-T1-GE3 SQS484EN-T1_GE3 SQS490EN SQS490EN-T1-GE3 SQS490EN-T1_GE3 SQS840EN SQS840EN-T1-GE3 SQS840EN-T1_GE3 SQS850EN SQS850EN-T1-GE3 SQS850EN-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 25-Aug-15 Document Number: 66697 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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