SQ7415AENW Datasheet

SQ7415AENW
www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® power MOSFET
-60
RDS(on) (Ω) at VGS = -10 V
0.065
• Low thermal resistance PowerPAK® 1212-8W
package with 1.07 mm profile
RDS(on) (Ω) at VGS = -4.5 V
0.090
• AEC-Q101 qualified
ID (A)
-16
Configuration
• Wettable flank terminals
Single
Package
• 100 % Rg and UIS tested
PowerPAK 1212-8W
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PowerPAK® 1212-8W Single
D
5
D
6
D
7
D
8
S
G
3.
3
m
m
1
3.3
mm
Top View
4
G
Bottom View
3
S
2
S
1
S
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C a
TC = 125 °C
Continuous Source Current (Diode Conduction)a
Pulsed Drain Current b
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
V
-16
ID
-11
IS
-16
IDM
-64
IAS
-23
EAS
26
53
PD
TJ, Tstg
UNIT
17
-55 to +175
Soldering Recommendations (Peak Temperature) d
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
SYMBOL
PCB
Mount c
LIMIT
RthJA
81
RthJC
2.8
UNIT
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-2138, Rev. A, 14-Sep-15
Document Number: 76598
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7415AENW
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS = 0 V, ID = -250 μA
-60
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-1.5
-2.0
-2.5
VDS = 0 V, VGS = ± 20 V
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = -60 V
-
-
-1
VGS = 0 V
VDS = -60 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -60 V, TJ = 175 °C
-
-
-150
VGS = -10 V
VDS ≤ -5 V
-15
-
-
VGS = -10 V
ID = -5.7 A
-
0.050
0.065
VGS = -10 V
ID = -5.7 A, TJ = 125 °C
-
-
0.112
VGS = -10 V
ID = -5.7 A, TJ = 175 °C
-
-
0.138
VGS = -4.5 V
ID = -4.4 A,
VDS = -15 V, ID = -5.7 A
-
0.070
0.090
-
13
-
-
1108
1385
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
-
132
165
Reverse Transfer Capacitance
Crss
-
84
105
Total Gate Charge c
Qg
-
25.5
38
-
3.6
-
-
6.7
-
3
6
9
td(on)
-
9
14
tr
-
9
14
-
37
56
-
8
12
Gate-Source
Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay
Time c
Rise Time c
Turn-Off Delay
Time c
Fall Time c
td(off)
VGS = 0 V
VGS = -10 V
VDS = -25 V, f = 1 MHz
VDS = -30 V, ID = -5.7 A
f = 1 MHz
VDD = -30 V, RL = 30 Ω
ID ≅ -1 A, VGEN = -10 V, Rg = 1 Ω
tf
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
IF = -6 A, VGS = 0 V
-
-
-64
A
-
-0.85
-1.2
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-2138, Rev. A, 14-Sep-15
Document Number: 76598
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7415AENW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
18
VGS = 10 V thru 5 V
15
VGS = 4 V
ID - Drain Current (A)
ID - Drain Current (A)
16
12
8
4
9
TC = 25 °C
6
3
VGS = 2 V
VGS = 3 V
12
TC = 125 °C
0
TC = - 55 °C
0
0
1
2
3
4
0
5
1
2
3
4
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
5
20
TC = - 55 °C
1.2
TC = 25 °C
0.8
0.4
TC = 125 °C
TC = 125 °C
12
8
4
TC = - 55 °C
0.0
0
0
1
2
3
4
5
0
3
6
9
12
VGS - Gate-to-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Transconductance
0.25
2000
0.20
1600
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = 25 °C
16
gfs - Transconductance (S)
ID - Drain Current (A)
1.6
0.15
0.10
VGS = 4.5 V
VGS = 10 V
0.05
15
Ciss
1200
800
400
Coss
0.00
Crss
0
0
4
8
12
16
ID - Drain Current (A)
On-Resistance vs. Drain Current
S15-2138, Rev. A, 14-Sep-15
20
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 76598
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7415AENW
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.5
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
ID = 5.7 A
VDS = 30 V
8
6
4
2
5
10
15
20
25
30
VGS = 4.5 V
1.3
0.9
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
1.0
175
100
0.7
10
IS - Source Current (A)
ID = 250 μA
VGS(th) Variance (V)
VGS = 10 V
1.7
0.5
- 50 - 25
0
0
ID = 5.7 A
2.1
0.4
ID = 5 mA
0.1
- 0.2
TJ = 150 °C
1
0.1
TJ = 25 °C
0.01
- 0.5
- 50 - 25
0
25
50
75
100
125
150
0.001
0.0
175
0.2
0.4
0.6
0.8
1.0
TJ - Temperature (°C)
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
Source Drain Diode Forward Voltage
0.5
1.2
- 60
VDS - Drain-to-Source Voltage (V)
ID = 1 mA
RDS(on) - On-Resistance (Ω)
0.4
0.3
0.2
TJ = 150 °C
0.1
- 64
- 68
- 72
- 76
TJ = 25 °C
0.0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
S15-2138, Rev. A, 14-Sep-15
- 80
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
Document Number: 76598
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7415AENW
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
ID Limited
ID - Drain Current (A)
10
100 μs
1 ms
10 ms
100 ms, 1 s,10 s, DC
1
Limited by RDS(on)*
0.1
0.01
0.01
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 81 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S15-2138, Rev. A, 14-Sep-15
Document Number: 76598
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ7415AENW
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?76598.
S15-2138, Rev. A, 14-Sep-15
Document Number: 76598
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
PowerPAK® 1212-8 and PowerPAK 1212-8W
Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK 1212-8 and PowerPAK 1212-8W packages:
DATASHEET PART NUMBER
OLD ORDERING CODE a
NEW ORDERING CODE
SQ7414AEN
SQ7414AEN-T1-GE3
SQ7414AEN-T1_GE3
SQ7414AENW
-
SQ7414AENW-T1_GE3
SQ7415AEN
SQ7415AEN-T1-GE3
SQ7415AEN-T1_GE3
SQ7415AENW
-
SQ7415AENW-T1_GE3
SQS401EN
SQS401EN-T1-GE3
SQS401EN-T1_GE3
SQS401ENW
-
SQS401ENW-T1_GE3
SQS405EN
SQS405EN-T1-GE3
SQS405EN-T1_GE3
SQS405ENW
-
SQS405ENW-T1_GE3
SQS420EN
SQS420EN-T1-GE3
SQS420EN-T1_GE3
SQS423EN
SQS423EN-T1-GE3
SQS423EN-T1_GE3
SQS460EN
SQS460EN-T1-GE3
SQS460EN-T1_GE3
SQS462EN
SQS462EN-T1-GE3
SQS462EN-T1_GE3
SQS482EN
SQS482EN-T1-GE3
SQS482EN-T1_GE3
SQS484EN
SQS484EN-T1-GE3
SQS484EN-T1_GE3
SQS490EN
SQS490EN-T1-GE3
SQS490EN-T1_GE3
SQS840EN
SQS840EN-T1-GE3
SQS840EN-T1_GE3
SQS850EN
SQS850EN-T1-GE3
SQS850EN-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 25-Aug-15
Document Number: 66697
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000