SQJ942EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFETs FEATURES PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2 VDS (V) 40 40 RDS(on) () at VGS = 10 V 0.022 0.011 RDS(on) () at VGS = 4.5 V 0.026 0.013 ID (A) 15 Configuration 45 Dual N • • • • TrenchFET® Power MOSFET AEC-Q101 Qualifiedd 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8L Asymmetric 5.1 D1 D2 3m m m .15 m 6 D2 G1 G2 D1 4 G2 3 S2 2 G1 S1 1 S1 S2 N-Channel 1 MOSFET Bottom View N-Channel 2 MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Dual Asymmetric Lead (Pb)-free and Halogen-free SQJ942EP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 Drain-Source Voltage VDS 40 40 Gate-Source Voltage VGS Continuous Drain Currenta TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID ± 20 15 45 15 32 IS 15 44 IDM 60 180 IAS 19 27 EAS 18.5 36.5 17 48 6 16 PD TJ, Tstg - 55 to + 175 Soldering Recommendations (Peak Temperature)e, f UNIT V A mJ W °C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL N-CHANNEL 1 N-CHANNEL 2 RthJA 75 70 RthJC 9 3.1 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-0708-Rev. B, 01-Apr-13 Document Number: 62669 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS(th) IGSS IDSS ID(on) RDS(on) VGS = 0 V, ID = 250 μA N-Ch 1 40 - - VGS = 0 V, ID = 250 μA N-Ch 2 40 - - VDS = VGS, ID = 250 μA N-Ch 1 1.3 1.8 2.3 VDS = VGS, ID = 250 μA N-Ch 2 1.3 1.8 2.3 N-Ch 1 - - ± 100 N-Ch 2 - - ± 100 VDS = 0 V, VGS = ± 20 V VGS = 0 V VDS 40 V N-Ch 1 - - 1 VGS = 0 V VDS = - 40 V N-Ch 2 - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C N-Ch 1 - - 50 VGS = 0 V VDS = 40 V, TJ = 125 °C N-Ch 2 - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C N-Ch 1 - - 150 VGS = 0 V VDS = 40 V, TJ = 175 °C N-Ch 2 - - 150 VGS = 10 V VDS 5 V N-Ch 1 30 - - VGS = 10 V VDS 5 V N-Ch 2 30 - - VGS = 10 V ID = 7.8 A N-Ch 1 - 0.018 0.022 VGS = 10 V ID = 10.1 A N-Ch 2 - 0.009 0.011 VGS = 10 V ID = 7.8 A, TJ = 125 °C N-Ch 1 - - 0.032 VGS = 10 V ID = 10.1 A, TJ = 125 °C N-Ch 2 - - 0.017 VGS = 10 V ID = 7.8 A, TJ = 175 °C N-Ch 1 - - 0.038 VGS = 10 V ID = 10.1 A, TJ = 175 °C N-Ch 2 - - 0.020 VGS = 4.5 V ID = 7.1 A N-Ch 1 - 0.022 0.026 VGS = 4.5 V ID = 9.3 A 0.013 gfs N-Ch 2 - 0.011 VDS = 15 V, ID = 7.8 A N-Ch 1 - 46 - VDS = 15 V, ID = 10.1 A N-Ch 2 - 73 - V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 1 - 647 809 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 2 - 1161 1451 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 1 - 105 131 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 2 - 178 222 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 1 - 42 53 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch 2 - 68 85 VGS = 10 V VDS = 20 V, ID = 16 A N-Ch 1 - 13.1 19.7 VGS = 10 V VDS = 20 V, ID = 6 A N-Ch 2 - 22.5 33.8 VGS = 10 V VDS = 20 V, ID = 16 A N-Ch 1 - 2.12 - VGS = 10 V VDS = 20 V, ID = 6 A N-Ch 2 - 3.35 - VGS = 10 V VDS = 20 V, ID = 16 A N-Ch 1 - 1.84 - VGS = 10 V VDS = 20 V, ID = 6 A N-Ch 2 - 3.14 - N-Ch 1 1.5 3.02 5 N-Ch 2 2.05 4.11 7 Rg f = 1 MHz pF nC Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. S13-0708-Rev. B, 01-Apr-13 Document Number: 62669 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Turn-On Delay SYMBOL Timec Rise Timec Turn-Off Delay Timec Fall Timec td(on) tr td(off) tf TEST CONDITIONS MIN. TYP. MAX. N-Ch 1 - 33 50 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 40 60 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 25 38 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 31 46 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 29 43 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 52 78 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 1 - 12 18 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 N-Ch 2 - 16 24 N-Ch 1 - - 60 N-Ch 2 - - 180 IS = 5.2 A N-Ch 1 - 0.8 1.2 IS = 6.8 A N-Ch 2 - 0.8 1.2 VDD = 20 V, RL = 20 ID 1 A, VGEN = 10 V, Rg = 1 UNIT ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD A V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-0708-Rev. B, 01-Apr-13 Document Number: 62669 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 8 24 16 TC = 25 °C 8 VGS = 3 V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 1 2 3 4 VGS - Gate-to-Source Voltage (V) Output Characteristics 10 75 8 60 6 4 5 Transfer Characteristics gfs - Transconductance (S) ID - Drain Current (A) TC = - 55 °C TC = 125 °C TC = 25 °C 2 TC = - 55 °C TC = 25 °C 45 30 TC = 125 °C 15 TC = 125 °C TC = - 55 °C 0 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 2 8 10 8 16 24 32 VDS - Drain-to-Source Voltage (V) 40 Transconductance 0.10 1200 0.08 960 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 4 6 ID - Drain Current (A) 0.06 0.04 VGS = 4.5 V Ciss 720 480 240 0.02 Coss Crss VGS = 10 V 0 0.00 0 8 16 24 ID - Drain Current (A) 32 On-Resistance vs. Drain Current S13-0708-Rev. B, 01-Apr-13 40 0 Capacitance Document Number: 62669 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 10 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) VGS = 10 V ID = 7.8 A 8 ID = 16 A VDS = 20 V 6 4 2 1.7 1.4 VGS = 4.5 V 1.1 0.8 0.5 0 0 3 6 9 12 Qg - Total Gate Charge (nC) 15 - 50 - 25 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 0.10 100 0.08 RDS(on) - On-Resistance (Ω) 10 IS - Source Current (A) 0 TJ = 150 °C 1 0.1 TJ = 25 °C 0.06 0.04 TJ = 25 °C 0.02 0.01 TJ = 150 °C 0.00 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage 0.6 50 ID = 1 mA VDS - Drain-to-Source Voltage (V) 0.3 VGS(th) Variance (V) ID = 5 mA 0.0 - 0.3 ID = 250 μA - 0.6 - 0.9 - 1.2 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S13-0708-Rev. B, 01-Apr-13 125 150 175 48 46 44 42 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62669 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 1 ms ID Limited 1 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on)* 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S13-0708-Rev. B, 01-Apr-13 Document Number: 62669 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix N-CHANNEL 1 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S13-0708-Rev. B, 01-Apr-13 Document Number: 62669 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 16 24 TC = 25 °C 16 TC = 125 °C 8 8 TC = - 55 °C VGS = 3 V 0 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 0 10 1 Output Characteristics 2 3 4 VGS - Gate-to-Source Voltage (V) 5 Transfer Characteristics 2.0 100 TC = - 55 °C TC = 25 °C 80 gfs - Transconductance (S) ID - Drain Current (A) 1.6 1.2 TC = 25 °C 0.8 0.4 60 TC = 125 °C 40 20 TC = 125 °C TC = - 55 °C 0.0 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 5 0 3 12 15 Transconductance 0.025 2000 0.020 1600 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 6 9 ID - Drain Current (A) 0.015 VGS = 4.5 V 0.010 Ciss 1200 800 VGS = 10 V 400 0.005 Coss Crss 0 0.000 0 8 16 24 ID - Drain Current (A) 32 On-Resistance vs. Drain Current S13-0708-Rev. B, 01-Apr-13 40 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62669 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 8 ID = 6 A VDS = 20 V 6 4 2 1.7 1.4 VGS = 4.5 V 1.1 0.8 0 0.5 0 5 10 15 20 Qg - Total Gate Charge (nC) 25 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Gate Charge 0.05 100 RDS(on) - On-Resistance (Ω) 10 IS - Source Current (A) VGS = 10 V ID = 10.1 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.04 0.03 TJ = 25 °C 0.02 0.01 TJ = 150 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage 0.6 52 0.3 50 0.0 VDS - Drain-to-Source Voltage (V) VGS(th) Variance (V) ID = 1 mA ID = 5 mA - 0.3 ID = 250 μA - 0.6 - 0.9 - 1.2 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage S13-0708-Rev. B, 01-Apr-13 125 150 175 48 46 44 42 40 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 62669 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) IDM Limited ID - Drain Current (A) 100 1 ms 10 ID Limited 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on)* BVDSS Limited 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S13-0708-Rev. B, 01-Apr-13 Document Number: 62669 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ942EP www.vishay.com Vishay Siliconix N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62669. S13-0708-Rev. B, 01-Apr-13 Document Number: 62669 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQJ200EP - SQJ200EP-T1_GE3 SQJ202EP - SQJ202EP-T1_GE3 SQJ401EP SQJ401EP-T1-GE3 SQJ401EP-T1_GE3 SQJ402EP SQJ402EP-T1-GE3 SQJ402EP-T1_GE3 SQJ403EEP SQJ403EEP-T1-GE3 SQJ403EEP-T1_GE3 SQJ403EP - SQJ403EP-T1_GE3 SQJ410EP SQJ410EP-T1-GE3 SQJ410EP-T1_GE3 SQJ412EP SQJ412EP-T1-GE3 SQJ412EP-T1_GE3 SQJ422EP SQJ422EP-T1-GE3 SQJ422EP-T1_GE3 SQJ431EP SQJ431EP-T1-GE3 SQJ431EP-T1_GE3 SQJ443EP SQJ443EP-T1-GE3 SQJ443EP-T1_GE3 SQJ446EP - SQJ446EP-T1_GE3 SQJ456EP SQJ456EP-T1-GE3 SQJ456EP-T1_GE3 SQJ459EP - SQJ459EP-T1_GE3 SQJ460AEP - SQJ460AEP-T1_GE3 SQJ461EP SQJ461EP-T1-GE3 SQJ461EP-T1_GE3 SQJ463EP SQJ463EP-T1-GE3 SQJ463EP-T1_GE3 SQJ465EP SQJ465EP-T1-GE3 SQJ465EP-T1_GE3 SQJ469EP SQJ469EP-T1-GE3 SQJ469EP-T1_GE3 SQJ486EP SQJ486EP-T1-GE3 SQJ486EP-T1_GE3 SQJ488EP SQJ488EP-T1-GE3 SQJ488EP-T1_GE3 SQJ500AEP SQJ500AEP-T1-GE3 SQJ500AEP-T1_GE3 SQJ840EP SQJ840EP-T1-GE3 SQJ840EP-T1_GE3 SQJ844AEP SQJ844AEP-T1-GE3 SQJ844AEP-T1_GE3 SQJ850EP SQJ850EP-T1-GE3 SQJ850EP-T1_GE3 SQJ858AEP SQJ858AEP-T1-GE3 SQJ858AEP-T1_GE3 SQJ886EP SQJ886EP-T1-GE3 SQJ886EP-T1_GE3 SQJ910AEP SQJ910AEP-T1-GE3 SQJ910AEP-T1_GE3 SQJ912AEP SQJ912AEP-T1-GE3 SQJ912AEP-T1_GE3 SQJ940EP SQJ940EP-T1-GE3 SQJ940EP-T1_GE3 SQJ942EP SQJ942EP-T1-GE3 SQJ942EP-T1_GE3 SQJ951EP SQJ951EP-T1-GE3 SQJ951EP-T1_GE3 SQJ952EP - SQJ952EP-T1_GE3 SQJ956EP SQJ956EP-T1-GE3 SQJ956EP-T1_GE3 SQJ960EP SQJ960EP-T1-GE3 SQJ960EP-T1_GE3 SQJ963EP SQJ963EP-T1-GE3 SQJ963EP-T1_GE3 SQJ968EP SQJ968EP-T1-GE3 SQJ968EP-T1_GE3 SQJ980AEP SQJ980AEP-T1-GE3 SQJ980AEP-T1_GE3 SQJ992EP SQJ992EP-T1-GE3 SQJ992EP-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 21-Oct-15 Document Number: 65804 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Assymetric Case Outline b2 D5 K1 D4 D3 D2 A1 b b1 e D1 θ b3 K2 0.25 gauge line D PIN 1 PIN 1 DIM. A A1 b b1 b2 b3 c D D1 D2 D3 D4 D5 e E E1 E2 E3 F L L1 K K1 K2 W W1 W2 W3 W4 θ DWG: 6009 MIN. 1.00 0.00 0.33 0.44 4.80 0.04 0.20 5.00 4.80 3.63 0.81 1.98 1.47 1.20 6.05 4.27 2.75 1.89 0.05 0.62 0.92 0.41 0.64 0.54 0.13 0.31 2.72 2.86 0.41 5° MILLIMETERS NOM. 1.07 0.06 0.41 0.51 4.90 0.12 0.25 5.13 4.90 3.73 0.91 2.08 1.57 1.27 6.15 4.37 2.85 1.99 0.12 0.72 1.07 0.51 0.74 0.64 0.23 0.41 2.82 2.96 0.51 10° MAX. 1.14 0.13 0.48 0.58 5.00 0.20 0.30 5.25 5.00 3.83 1.01 2.18 1.67 1.34 6.25 4.47 2.95 2.09 0.19 0.82 1.22 0.61 0.84 0.74 0.33 0.51 2.92 3.06 0.61 12° MIN. 0.039 0.000 0.013 0.017 0.189 0.002 0.008 0.197 0.189 0.143 0.032 0.078 0.058 0.047 0.238 0.168 0.108 0.074 0.002 0.024 0.036 0.016 0.025 0.021 0.005 0.012 0.107 0.113 0.016 5° INCHES NOM. 0.042 0.003 0.016 0.020 0.193 0.005 0.010 0.202 0.193 0.147 0.036 0.082 0.062 0.050 0.242 0.172 0.112 0.078 0.005 0.028 0.042 0.020 0.029 0.025 0.009 0.016 0.111 0.117 0.020 10° MAX. 0.045 0.005 0.019 0.023 0.197 0.008 0.012 0.207 0.197 0.151 0.040 0.086 0.066 0.053 0.246 0.176 0.116 0.082 0.007 0.032 0.048 0.024 0.033 0.029 0.013 0.020 0.115 0.120 0.024 12° Note • Millimeters will govern Document Number: 62714 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 C14-0057-Rev. D, 07-Apr-14 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PADs FOR PowerPAK® SO-8L DUAL ASYMMETRIC Recommended Minimum Pads Dimensions in mm [inches] Revision: 07-Mar-13 1 Document Number: 64477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000