SQJ500AEP www.vishay.com Vishay Siliconix Automotive N- and P-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY N-CHANNEL VDS (V) P-CHANNEL 40 -40 RDS(on) () at VGS = ± 10 V 0.0092 0.0270 RDS(on) () at VGS = ± 4.5 V 0.0112 0.0435 30 -30 ID (A) Configuration N- and P-Pair • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK® SO-8L Dual D1 S2 D1 G2 G1 D2 6. 15 m m 1 3 .1 3 4 S2 G2 m m 5 Top View 1 2 S1 G1 S1 D2 N-Channel MOSFET P-Channel MOSFET Bottom View ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and Halogen-free SQJ500AEP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage VDS 40 -40 Gate-Source Voltage VGS Continuous Drain Currenta TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID ± 20 30 -18 IS 30 -30 IDM 120 -120 IAS 26.5 -25 EAS 35 31 48 48 16 16 TJ, Tstg V -30 30 PD UNIT -55 to +175 Soldering Recommendations (Peak Temperature)e, f A mJ W °C 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc SYMBOL N-CHANNEL P-CHANNEL RthJA 85 85 RthJC 3.1 3.1 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. e. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS(th) IGSS VGS = 0 V, ID = 250 μA N-Ch 40 - - VGS = 0 V, ID = - 250 μA P-Ch -40 - - VDS = VGS, ID = 250 μA N-Ch 1.3 1.8 2.3 VDS = VGS, ID = - 250 μA VDS = 0 V, VGS = ± 20 V VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb IDSS ID(on) RDS(on) gfs VDS = 40 V P-Ch -1.5 -2 -2.5 N-Ch - - ± 100 P-Ch - - ± 100 N-Ch - - 1 VGS = 0 V VDS = -40 V P-Ch - - -1 VGS = 0 V VDS = 40 V, TJ = 125 °C N-Ch - - 50 VGS = 0 V VDS = -40 V, TJ = 125 °C P-Ch - - -50 VGS = 0 V VDS = 40 V, TJ = 175 °C N-Ch - - 150 VGS = 0 V VDS = -40 V, TJ = 175 °C P-Ch - - -150 VGS = 10 V VDS 5 V N-Ch 25 - - VGS = -10 V VDS 5 V P-Ch -25 - - VGS = 10 V ID = 9.8 A N-Ch - 0.0077 0.0092 0.0220 0.0270 VGS = -10 V ID = -6 A P-Ch - VGS = 10 V ID = 9.8 A, TJ = 125 °C N-Ch - - 0.0138 VGS = -10 V ID = -6 A, TJ = 125 °C P-Ch - - 0.0380 VGS = 10 V ID = 9.8 A, TJ = 175 °C N-Ch - - 0.0170 VGS = -10 V ID = -6 A, TJ = 175 °C P-Ch - - 0.0460 VGS = 4.5 V ID = 8.9 A N-Ch - 0.0094 0.0112 VGS = -4.5 V ID = -4.7 A 0.0360 0.0435 P-Ch - VDS = 15 V, ID = 9.8 A N-Ch - 65 - VDS = -15 V, ID = -6 A P-Ch - 16 - V nA μA A S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance S13-2581-Rev. A, 23-Dec-13 Rg VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch - 1474 1843 VGS = 0 V VDS = -20 V, f = 1 MHz P-Ch - 1302 1628 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch - 218 273 VGS = 0 V VDS = -20 V, f = 1 MHz P-Ch - 222 278 VGS = 0 V VDS = 20 V, f = 1 MHz N-Ch - 89 111 VGS = 0 V VDS = -20 V, f = 1 MHz P-Ch - 154 193 VGS = 10 V VDS = 20 V, ID = 10 A N-Ch - 25.5 38.3 VGS = -10 V VDS = -20 V, ID = -10 A P-Ch - 30.2 45 VGS = 10 V VDS = 20 V, ID = 10 A N-Ch - 4.4 - VGS = -10 V VDS = -20 V, ID = -10 A P-Ch - 4.1 - VGS = 10 V VDS = 20 V, ID = 10 A N-Ch - 4.3 - VGS = -10 V VDS = -20 V, ID = -10 A P-Ch - 7.4 - N-Ch 0.65 1.37 2.1 P-Ch 3.1 6.15 9.5 f = 1 MHz pF nC Document Number: 62878 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec SYMBOL td(on) tr td(off) tf TEST CONDITIONS MIN. TYP. MAX. N-Ch - 8 12 VDD = -20 V, RL = 2 ID -10 A, VGEN = -10 V, Rg = 1 P-Ch - 7 11 VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 N-Ch - 12 18 VDD = -20 V, RL = 2 ID -10 A, VGEN = -10 V, Rg = 1 P-Ch - 9 13 VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 N-Ch - 22 33 VDD = -20 V, RL = 2 ID -10 A, VGEN = -10 V, Rg = 1 P-Ch - 43 64 VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 N-Ch - 10 16 VDD = -20 V, RL = 2 ID -10 A, VGEN = -10 V, Rg = 1 P-Ch - 19 28 N-Ch - - 120 P-Ch - - -120 IS = 6.5 A N-Ch - 0.79 1.2 IS = -3.4 A P-Ch - -0.78 -1.2 VDD = 20 V, RL = 2 ID 10 A, VGEN = 10 V, Rg = 1 UNIT ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD A V Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. of operating temperature. c. Independent Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 VGS = 10 V thru 4 V 40 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 30 TC = 25 °C 20 TC = 125 °C 10 10 VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 0 10 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10.0 5 125 TC = 25 °C TC = - 55 °C 100 gfs - Transconductance (S) ID - Drain Current (A) 8.0 6.0 4.0 TC = 25 °C 2.0 75 TC = 125 °C 50 25 TC = 125 °C TC = - 55 °C 0.0 0 1 2 3 4 5 0 4 8 12 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics Transconductance 0.025 2500 0.020 2000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 16 20 32 40 Ciss 1500 1000 500 Coss Crss 0.000 0 0 10 20 30 40 ID - Drain Current (A) On-Resistance vs. Drain Current S13-2581-Rev. A, 23-Dec-13 50 0 8 16 24 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62878 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 10 A 8 VDS = 20 V 6 4 2 0 5 10 15 20 25 1.4 VGS = 4.5 V 1.1 0.8 - 50 - 25 30 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.10 100 0.08 RDS(on) - On-Resistance (Ω) 10 IS - Source Current (A) 1.7 0.5 0 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.06 0.04 TJ = 150 °C 0.02 0.001 TJ = 25 °C 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 VDS - Drain-to-Source Voltage (V) 52 0.2 VGS(th) Variance (V) VGS = 10 V ID = 8 A ID = 5 mA - 0.1 ID = 250 μA - 0.4 - 0.7 - 1.0 - 50 - 25 0 25 50 75 100 125 150 175 50 ID = 1 mA 48 46 44 42 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) IDM Limited ID - Drain Current (A) 100 1 ms 10 ID Limited 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on)* BVDSS Limited 0.1 TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 VGS = 10 V thru 5 V 40 ID - Drain Current (A) ID - Drain Current (A) 40 30 VGS = 4 V 20 10 30 TC = 25 °C 20 10 VGS = 3 V TC = 125 °C 0 0 0 2 4 6 8 10 0 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 30 10 TC = - 55 °C TC = 25 °C 8.0 24 gfs - Transconductance (S) ID - Drain Current (A) 2 VDS - Drain-to-Source Voltage (V) 10.0 6.0 4.0 TC = 25 °C 2.0 TC = 125 °C 18 TC = 125 °C 12 6 TC = - 55 °C 0.0 0 0 1 2 3 4 5 0 8 12 ID - Drain Current (A) Transfer Characteristics Transconductance 0.10 2500 0.08 2000 0.06 VGS = 4.5 V 0.04 VGS = 10 V 0 30 40 ID - Drain Current (A) On-Resistance vs. Drain Current S13-2581-Rev. A, 23-Dec-13 50 32 40 1000 0.00 20 20 Ciss 500 10 16 1500 0.02 0 4 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TC = - 55 °C Coss Crss 0 8 16 24 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62878 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 ID = 10 A 8 VDS = 20 V 6 4 2 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 0 0 6 13 19 26 - 50 - 25 32 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.15 100 0.12 RDS(on) - On-Resistance (Ω) 10 IS - Source Current (A) ID = 8 A 1.7 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.09 0.06 TJ = 150 °C 0.03 TJ = 25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage - 44 1.0 ID = 250 μA VDS - Drain-to-Source Voltage (V) ID = 1 mA 0.7 VGS(th) Variance (V) 2 0.4 ID = 5 mA 0.1 - 0.2 - 46 - 48 - 50 - 52 - 54 - 0.5 - 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) TJ - Junction Temperature (°C) Threshold Voltage Drain Source Breakdown vs. Junction Temperature S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) IDM Limited ID - Drain Current (A) 100 Limited by RDS(on)* 1 ms 10 ID Limited 10 ms 100 ms, 1 s, 10 s, DC 1 BVDSS Limited 0.1 0.01 0.01 TC = 25 °C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 85 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ500AEP www.vishay.com Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62878. S13-2581-Rev. A, 23-Dec-13 Document Number: 62878 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ordering Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Ordering codes for the SQ rugged series power MOSFETs in the PowerPAK SO-8L package: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQJ200EP - SQJ200EP-T1_GE3 SQJ202EP - SQJ202EP-T1_GE3 SQJ401EP SQJ401EP-T1-GE3 SQJ401EP-T1_GE3 SQJ402EP SQJ402EP-T1-GE3 SQJ402EP-T1_GE3 SQJ403EEP SQJ403EEP-T1-GE3 SQJ403EEP-T1_GE3 SQJ403EP - SQJ403EP-T1_GE3 SQJ410EP SQJ410EP-T1-GE3 SQJ410EP-T1_GE3 SQJ412EP SQJ412EP-T1-GE3 SQJ412EP-T1_GE3 SQJ422EP SQJ422EP-T1-GE3 SQJ422EP-T1_GE3 SQJ431EP SQJ431EP-T1-GE3 SQJ431EP-T1_GE3 SQJ443EP SQJ443EP-T1-GE3 SQJ443EP-T1_GE3 SQJ446EP - SQJ446EP-T1_GE3 SQJ456EP SQJ456EP-T1-GE3 SQJ456EP-T1_GE3 SQJ459EP - SQJ459EP-T1_GE3 SQJ460AEP - SQJ460AEP-T1_GE3 SQJ461EP SQJ461EP-T1-GE3 SQJ461EP-T1_GE3 SQJ463EP SQJ463EP-T1-GE3 SQJ463EP-T1_GE3 SQJ465EP SQJ465EP-T1-GE3 SQJ465EP-T1_GE3 SQJ469EP SQJ469EP-T1-GE3 SQJ469EP-T1_GE3 SQJ486EP SQJ486EP-T1-GE3 SQJ486EP-T1_GE3 SQJ488EP SQJ488EP-T1-GE3 SQJ488EP-T1_GE3 SQJ500AEP SQJ500AEP-T1-GE3 SQJ500AEP-T1_GE3 SQJ840EP SQJ840EP-T1-GE3 SQJ840EP-T1_GE3 SQJ844AEP SQJ844AEP-T1-GE3 SQJ844AEP-T1_GE3 SQJ850EP SQJ850EP-T1-GE3 SQJ850EP-T1_GE3 SQJ858AEP SQJ858AEP-T1-GE3 SQJ858AEP-T1_GE3 SQJ886EP SQJ886EP-T1-GE3 SQJ886EP-T1_GE3 SQJ910AEP SQJ910AEP-T1-GE3 SQJ910AEP-T1_GE3 SQJ912AEP SQJ912AEP-T1-GE3 SQJ912AEP-T1_GE3 SQJ940EP SQJ940EP-T1-GE3 SQJ940EP-T1_GE3 SQJ942EP SQJ942EP-T1-GE3 SQJ942EP-T1_GE3 SQJ951EP SQJ951EP-T1-GE3 SQJ951EP-T1_GE3 SQJ952EP - SQJ952EP-T1_GE3 SQJ956EP SQJ956EP-T1-GE3 SQJ956EP-T1_GE3 SQJ960EP SQJ960EP-T1-GE3 SQJ960EP-T1_GE3 SQJ963EP SQJ963EP-T1-GE3 SQJ963EP-T1_GE3 SQJ968EP SQJ968EP-T1-GE3 SQJ968EP-T1_GE3 SQJ980AEP SQJ980AEP-T1-GE3 SQJ980AEP-T1_GE3 SQJ992EP SQJ992EP-T1-GE3 SQJ992EP-T1_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 21-Oct-15 Document Number: 65804 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline for all Parts Document Number: 66934 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 q 2.96 0° - 0.117 10° 0° - 10° ECN: C15-1203-Rev. A, 07-Sep-15 DWG: 6044 Note • Millimeters will gover Document Number: 66934 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 07-Sep-15 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000