PIN Photodiodes PNZ313 (PN313) Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) (5.0) Device center 2-1.2±0.15 2.3±0.3 13 min. • Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.) • High sensitivity, high reliability • Peak emission wavelength matched with infrared light emitting diodes: λp = 940 nm (typ.) • Wide detection area, wide half-power angle: θ = 65° (typ.) • Adoption of visible light cutoff resin 8.0±0.5 ■ Features 2-0.6±0.15 0.41±0.15 2 1 5.08±0.25 Parameter Ta = 25°C Symbol Rating Unit Reverse voltage VR 30 V Power dissipation PD 100 mW Operating ambient temperature Topr −30 to +80 °C Storage temperature Tstg −40 to +80 °C 2.8±0.3 ■ Absolute Maximum Ratings 1: Cathode 2: Anode LSTFR102NC-001 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 5 50 35 50 µA Dark current ID VR = 10 V Photocurrent *1 IL VR = 10 V, L = 1 000 lx Peak emission wavelength λp VR = 10 V 940 nm Rise time *2 tr VR = 10 V, RL = 1 kΩ 50 ns Fall time *2 tf Rise time *2 tr nA 50 ns VR = 10 V, RL = 100 kΩ 5 µs Fall time *2 tf 5 µs Terminal capacitance Ct VR = 0 V, f = 1 MHz 70 pF Half-power angle θ The angle from which photocurrent becomes 50% 65 ° Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in VR = 10 V (Input pulse) λP = 800 nm 50 Ω 90% 10% Sig. out RL (Output pulse) td tr tf td: Delay time tr: Rise time (Time required for the collector photocurrent to increase from 10% to 90% of its final value) tf: Fall time (Time required for the collector photocurrent to decrease from 90% to 10% of its initial value) Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHE00033BED 1 PNZ313 PD Ta IL L 103 120 VR = 10 V Ta = 25°C T = 2 856 K 102 80 60 40 VR = 10 V 102 Dark current ID (nA) Photocurrent IL (µA) Power dissipation PD (mW) 100 ID T a 103 10 1 10 1 20 0 −30 0 20 40 60 80 10−1 10 100 102 ∆IL Ta 0 40 80 60 40 20 0 600 80 20 0 1 200 80 40 60 40 20 10 Reverse voltage VR (V) 102 Sig. in 10 50 Ω tr 80 ID V R 90% 10% td tf 1 10−1 10−2 −1 10 40 102 VR = 10 V Sig. out RL 0 Half-power angle θ (°) Dark current ID (nA) Rise time tr , Fall time tf (µs) Terminal capacitance Ct (pF) 80 1 40 tr , tf RL 102 10−1 60 Wavelength λ (nm) Ct VR 0 −2 10 1 000 800 Ambient temperature Ta (°C) 100 80 Directivity characteristics Relative sensitivity ∆S (%) Relative sensitivity ∆S (%) Relative photocurrent ∆IL (%) 40 40 100 VR = 10 V Ta = 25°C 80 80 0 Ambient temperature Ta (°C) Spectral sensitivity characteristics 100 VR = 10 V L = 1 000 lx T = 2 856 K 120 0 −40 2 10−1 −40 104 Illuminance L (lx) Ambient temperature Ta (°C) 160 103 1 10 Load resistance RL (kΩ) SHE00033BED 102 10 1 10−1 0 8 16 24 32 40 Reverse voltage VR (V) 48 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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