PANASONIC MA27V17

Variable Capacitance Diodes
MA27V17
Silicon epitaxial planar type
0.27+0.05
–0.02
For VCO
0.10+0.05
–0.02
Unit: mm
Rating
Unit
Reverse voltage
VR
6
V
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
0.52±0.03
Symbol
0 to 0.01
Parameter
5˚
0.15 max.
0.60±0.05
■ Absolute Maximum Ratings Ta = 25°C
0.15 min.
5˚
1
0.15 min.
• Good linearity and large capacitance-ratio in CD − VR relation
• Small series resistance rD
1.00±0.05
■ Features
1.40±0.05
2
1 : Anode
2 : Cathode
SSSMini2-F1 Package
Marking Symbol: L
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Reverse current
Symbol
IR
Conditions
VR = 5 V
Diode capacitance
CD(1V)
VR = 1 V, f = 1 MHz
CD(4V)
VR = 4 V, f = 1 MHz
Capacitance ratio
CD(1V)/CD(4V)
Series resistance
*
rD
Min
VR = 4 V, f = 470 MHz
Typ
Max
Unit
10
nA
2.86
3.10
pF
1.17
1.27
2.34
2.54

0.35
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 470 MHz
3. *: Measuring instrument; YHP MODEL 4191A RF IMPEDANCE ANALYZER
Publication date: August 2003
SKD00085AED
1
MA27V17
IF  V F
CD  VR
120
CD  Ta
10
f = 1 MHz
Ta = 25°C
1.032
80
Ta = 85°C
−25°C
60
25°C
40
20
CD (Ta)
CD (Ta = 25°C)
1.024
Diode capacitance CD (pF)
Forward current IF (mA)
100
f = 1 MHz
1
1.016
VR = 1 V
1.008
1.000
4V
0.992
0.984
0.976
0
0
0.2 0.4
0.6
0.8
1.0
1.2
1.4
Forward voltage VF (V)
10
−1
0
1
2
3
4
Reverse current IR (nA)
VR = 5 V
10
1
0.1
0.01
−25
−5
15
35
55
75
95
Ambient temperature Ta (°C)
2
6
Reverse voltage VR (V)
IR  T a
100
5
SKD00085AED
7
0.968
−25
−5
15
35
55
75
Ambient temperature Ta (°C)
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and semiconductors described in this material
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the latest specifications satisfy your requirements.
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2002 JUL