SiA817EDJ Datasheet

New Product
SiA817EDJ
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) () Max.
ID (A)
0.065 at VGS = - 10 V
- 4.5a
0.080 at VGS = - 4.5 V
- 4.5a
0.092 at VGS = - 3.7 V
- 4.5a
0.125 at VGS = - 2.5 V
-3
Qg
(Typ.)
6.6 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
IF (A)a
30
0.56 at 1 A
2
PowerPAK SC-70-6 Dual
• LITTLE FOOT® Plus Schottky Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.75 mm Profile
• Typical ESD Protection (MOSFET): 1500 V (HBM)
• 100 % Rg Tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Portable Devices such as Smart Phones, Tablet PCs and
Mobile Computing
- Battery Charger Switch
- Buck Converter
- Power Management
1
A
2
NC
3
D
K
K
D
A
Marking Code
0.75 mm
K
S
D
6
G
5
2.05 mm
S
Part #
code
2.05 mm
HEX
G
XXX
Lot Traceability
and Date code
4
Ordering Information:
SiA817EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
Gate-Source Voltage (MOSFET)
Symbol
VDS
VKA
VGS
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET) (t = 300 µs)
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
IDM
TC = 25 °C
TA = 25 °C
IS
IF
IFM
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
Document Number: 62820
S13-0196-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
Limit
- 30
30
± 12
- 4.5a
- 4.5a
- 4.2b, c
- 3.4b, c
- 15
- 4.5a
- 1.6b, c
2b
3
6.5
5
1.9b, c
1.2b, c
6.8
4.3
1.6b, c
1b, c
- 55 to 150
260
Unit
V
A
W
°C
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA817EDJ
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
t5s
Steady State
t5s
Steady State
Maximum Junction-to-Ambient (MOSFET)b, f
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)b, f
Maximum Junction-to-Case (Drain) (Schottky)
Symbol
RthJA
RthJC
RthJA
RthJC
Typical
52
12.5
62
15
Maximum
65
16
76
18.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Symbol
Test Conditions
Min.
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
- 30
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(on)
gfs
Ciss
Coss
Crss
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
VDS = - 15 V, VGS = - 4.5 V, ID = - 4.2 A
IS
ISM
VSD
trr
Qrr
ta
tb
TC = 25 °C
f = 1 MHz
VDD = - 15 V, RL = 4.4 
ID  - 3.4 A, VGEN = - 4.5 V, Rg = 1 
VDD = - 15 V, RL = 4.4 
ID  - 3.4 A, VGEN = - 10 V, Rg = 1 
IS = - 3.4 A, VGS = 0 V
IF = - 3.4 A, dI/dt = 100 A/µs, TJ = 25 °C
mV/°C
- 1.3
± 0.5
± 10
-1
- 10
-8
0.065
0.080
0.092
0.125
9
1.1
V
µA
A
0.054
0.065
0.070
0.095
VDS = - 15 V, VGS = - 10 V, ID = - 4.2 A
Unit
V
- 0.6
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Max.
- 23
2.7
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 4.5 V
VDS = 0 V, VGS = ± 12 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS  5 V, VGS = - 10 V
VGS = - 10 V, ID = - 3 A
VGS = - 4.5 V, ID = - 2 A
VGS = - 3.7 V, ID = - 1 A
VGS = - 2.5 V, ID = - 1 A
VDS = - 10 V, ID = - 3 A
Typ.
600
55
50
14
6.6
1.3
2
5.5
20
20
23
10
10
10
25
7
- 0.9
16
8
9
7

S
pF
23
10
11
40
40
45
20
20
20
50
15
- 4.5
- 15
- 1.2
30
15
nC

ns
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Document Number: 62820
S13-0196-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA817EDJ
Vishay Siliconix
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
Test Conditions
IF = 0.5 A
IF = 0.5 A, TJ = 125 °C
IF = 1 A
IF = 1 A, TJ = 125 °C
Vr = 30 V
Vr = 30 V, TJ = 85 °C
Vr = 15 V
Min.
Typ.
0.37
0.31
Max.
0.45
0.37
0.46
0.41
0.025
0.6
35
0.56
0.50
0.100
6
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10-2
1.60
10-3
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
1.20
TJ = 25 °C
0.80
0.40
10-4
TJ = 150 °C
10-5
10-6
TJ = 25 °C
10-7
10-8
10-9
0.00
0
3
6
9
12
VGS - Gate-Source Voltage (V)
15
18
0
Gate-Source Voltage vs. Gate Current
6
9
12
15
VGS - Gate-to-Source Voltage (V)
18
Gate-Source Voltage vs. Gate Current
15
5
VGS = 10 V thru 4 V
VGS = 3 V
12
4
ID - Drain Current (A)
ID - Drain Current (A)
3
9
6
VGS = 2 V
3
3
2
TC = 25 °C
1
TC = 125 °C
TC = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Document Number: 62820
S13-0196-Rev. A, 28-Jan-13
2.5
3.0
0
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
For technical questions, contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA817EDJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
0.250
1.8
VGS = 2.5 V
1.6
RDS(on) - On-Resistance
(Normalized)
RDS(on) - On-Resistance (Ω)
0.200
0.150
VGS = 4.5 V
0.100
VGS = 3.7 V
0.050
0
3
6
9
12
VGS = 10V, 4.5V, 3.7 V
1.4
VGS = 2.5 V
1.2
1.0
0.8
VGS = 10 V
0.000
ID = 3 A
0.6
- 50
15
ID - Drain Current (A)
0
25
50
75
100
TJ - Junction Temperature (°C)
On-Resistance vs. Drain Current and Gate Voltage
On-Resistance vs. Junction Temperature
1000
- 25
125
150
100
800
IS - Source Current (A)
C - Capacitance (pF)
Ciss
600
400
10
TJ = 150 °C
TJ = 25 °C
1
200
Coss
0
Crss
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
0.1
0.0
30
0.2
0.4
1.0
1.2
Soure-Drain Diode Forward Voltage
0.250
8
VDS = 15 V
ID = 4.2 A
ID = 3 A
0.200
RDS(on) - On-Resistance (Ω)
VGS - Gate-to-Source Voltage (V)
0.8
VSD - Source-to-Drain Voltage (V)
Capacitance
6
VDS = 7.5 V
4
VDS = 24 V
2
0
0.6
0.150
0.100
TJ = 125 °C
TJ = 25 °C
0.050
0.000
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62820
S13-0196-Rev. A, 28-Jan-13
15
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
For technical questions, contact: [email protected]
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA817EDJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
20
1.1
1.0
15
Power (W)
VGS(th) (V)
0.9
0.8
ID = 250 μA
10
0.7
5
0.6
0.5
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
10
1
TJ - Temperature (°C)
1000
100
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 µs
1
1 ms
10 ms
0.1
100 ms
10 s
1s
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Case
8
10
Power Dissipation (W)
ID - Drain Current (A)
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 62820
S13-0196-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA817EDJ
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 110 °C/W
Single Pulse
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 62820
S13-0196-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
6
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA817EDJ
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
100
I F - Forward Current (A)
I R - Reverse Current (mA)
10
1
VR = 30 V
10-1
VR = 10 V
10-2
10-3
1
TJ = 150 °C
TJ = 25 °C
10-4
10-5
- 50
- 25
0
25
50
75
100
125
0.1
0.0
150
0.1
0.2
0.3
0.4
0.5
0.6
0.7
T J - Junction Temperature (°C)
VF - Forward Voltage Drop (V)
Reverse Current vs. Junction Temperature
Forward Voltage Drop
0.8
0.9
1.0
C T - Junction Capacitance (pF)
250
200
150
100
50
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 62820
S13-0196-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA817EDJ
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 85 °C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Single Pulse
0.1
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62820.
Document Number: 62820
S13-0196-Rev. A, 28-Jan-13
For technical questions, contact: [email protected]
www.vishay.com
8
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
APPLICATION NOTE
Dimensions in mm (inches)
Return to Index
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Document Number: 70487
Revision: 18-Oct-13
Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000