New Product SiA817EDJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.065 at VGS = - 10 V - 4.5a 0.080 at VGS = - 4.5 V - 4.5a 0.092 at VGS = - 3.7 V - 4.5a 0.125 at VGS = - 2.5 V -3 Qg (Typ.) 6.6 nC SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)a 30 0.56 at 1 A 2 PowerPAK SC-70-6 Dual • LITTLE FOOT® Plus Schottky Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance - Thin 0.75 mm Profile • Typical ESD Protection (MOSFET): 1500 V (HBM) • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - Battery Charger Switch - Buck Converter - Power Management 1 A 2 NC 3 D K K D A Marking Code 0.75 mm K S D 6 G 5 2.05 mm S Part # code 2.05 mm HEX G XXX Lot Traceability and Date code 4 Ordering Information: SiA817EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Symbol VDS VKA VGS Continuous Drain Current (TJ = 150 °C) (MOSFET) Pulsed Drain Current (MOSFET) (t = 300 µs) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM TC = 25 °C TA = 25 °C IS IF IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Soldering Recommendations (Peak Temperature)d, e Document Number: 62820 S13-0196-Rev. A, 28-Jan-13 For technical questions, contact: [email protected] Limit - 30 30 ± 12 - 4.5a - 4.5a - 4.2b, c - 3.4b, c - 15 - 4.5a - 1.6b, c 2b 3 6.5 5 1.9b, c 1.2b, c 6.8 4.3 1.6b, c 1b, c - 55 to 150 260 Unit V A W °C www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA817EDJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t5s Steady State t5s Steady State Maximum Junction-to-Ambient (MOSFET)b, f Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, f Maximum Junction-to-Case (Drain) (Schottky) Symbol RthJA RthJC RthJA RthJC Typical 52 12.5 62 15 Maximum 65 16 76 18.5 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Symbol Test Conditions Min. VDS VDS/TJ VGS(th)/TJ VGS(th) VGS = 0 V, ID = - 250 µA - 30 Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) gfs Ciss Coss Crss Qg Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time VDS = - 15 V, VGS = - 4.5 V, ID = - 4.2 A IS ISM VSD trr Qrr ta tb TC = 25 °C f = 1 MHz VDD = - 15 V, RL = 4.4 ID - 3.4 A, VGEN = - 4.5 V, Rg = 1 VDD = - 15 V, RL = 4.4 ID - 3.4 A, VGEN = - 10 V, Rg = 1 IS = - 3.4 A, VGS = 0 V IF = - 3.4 A, dI/dt = 100 A/µs, TJ = 25 °C mV/°C - 1.3 ± 0.5 ± 10 -1 - 10 -8 0.065 0.080 0.092 0.125 9 1.1 V µA A 0.054 0.065 0.070 0.095 VDS = - 15 V, VGS = - 10 V, ID = - 4.2 A Unit V - 0.6 VDS = - 15 V, VGS = 0 V, f = 1 MHz Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Max. - 23 2.7 ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 4.5 V VDS = 0 V, VGS = ± 12 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS 5 V, VGS = - 10 V VGS = - 10 V, ID = - 3 A VGS = - 4.5 V, ID = - 2 A VGS = - 3.7 V, ID = - 1 A VGS = - 2.5 V, ID = - 1 A VDS = - 10 V, ID = - 3 A Typ. 600 55 50 14 6.6 1.3 2 5.5 20 20 23 10 10 10 25 7 - 0.9 16 8 9 7 S pF 23 10 11 40 40 45 20 20 20 50 15 - 4.5 - 15 - 1.2 30 15 nC ns A V ns nC ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Document Number: 62820 S13-0196-Rev. A, 28-Jan-13 For technical questions, contact: [email protected] www.vishay.com 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA817EDJ Vishay Siliconix SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions IF = 0.5 A IF = 0.5 A, TJ = 125 °C IF = 1 A IF = 1 A, TJ = 125 °C Vr = 30 V Vr = 30 V, TJ = 85 °C Vr = 15 V Min. Typ. 0.37 0.31 Max. 0.45 0.37 0.46 0.41 0.025 0.6 35 0.56 0.50 0.100 6 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10-2 1.60 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 1.20 TJ = 25 °C 0.80 0.40 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 10-8 10-9 0.00 0 3 6 9 12 VGS - Gate-Source Voltage (V) 15 18 0 Gate-Source Voltage vs. Gate Current 6 9 12 15 VGS - Gate-to-Source Voltage (V) 18 Gate-Source Voltage vs. Gate Current 15 5 VGS = 10 V thru 4 V VGS = 3 V 12 4 ID - Drain Current (A) ID - Drain Current (A) 3 9 6 VGS = 2 V 3 3 2 TC = 25 °C 1 TC = 125 °C TC = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) Output Characteristics Document Number: 62820 S13-0196-Rev. A, 28-Jan-13 2.5 3.0 0 0.0 0.5 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA817EDJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.250 1.8 VGS = 2.5 V 1.6 RDS(on) - On-Resistance (Normalized) RDS(on) - On-Resistance (Ω) 0.200 0.150 VGS = 4.5 V 0.100 VGS = 3.7 V 0.050 0 3 6 9 12 VGS = 10V, 4.5V, 3.7 V 1.4 VGS = 2.5 V 1.2 1.0 0.8 VGS = 10 V 0.000 ID = 3 A 0.6 - 50 15 ID - Drain Current (A) 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Drain Current and Gate Voltage On-Resistance vs. Junction Temperature 1000 - 25 125 150 100 800 IS - Source Current (A) C - Capacitance (pF) Ciss 600 400 10 TJ = 150 °C TJ = 25 °C 1 200 Coss 0 Crss 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) 0.1 0.0 30 0.2 0.4 1.0 1.2 Soure-Drain Diode Forward Voltage 0.250 8 VDS = 15 V ID = 4.2 A ID = 3 A 0.200 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Voltage (V) 0.8 VSD - Source-to-Drain Voltage (V) Capacitance 6 VDS = 7.5 V 4 VDS = 24 V 2 0 0.6 0.150 0.100 TJ = 125 °C TJ = 25 °C 0.050 0.000 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62820 S13-0196-Rev. A, 28-Jan-13 15 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-to-Source Voltage For technical questions, contact: [email protected] www.vishay.com 4 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA817EDJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 20 1.1 1.0 15 Power (W) VGS(th) (V) 0.9 0.8 ID = 250 μA 10 0.7 5 0.6 0.5 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 10 1 TJ - Temperature (°C) 1000 100 Pulse (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 1 ms 10 ms 0.1 100 ms 10 s 1s DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area, Junction-to-Case 8 10 Power Dissipation (W) ID - Drain Current (A) 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 62820 S13-0196-Rev. A, 28-Jan-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA817EDJ Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 62820 S13-0196-Rev. A, 28-Jan-13 For technical questions, contact: [email protected] www.vishay.com 6 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA817EDJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 100 I F - Forward Current (A) I R - Reverse Current (mA) 10 1 VR = 30 V 10-1 VR = 10 V 10-2 10-3 1 TJ = 150 °C TJ = 25 °C 10-4 10-5 - 50 - 25 0 25 50 75 100 125 0.1 0.0 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 T J - Junction Temperature (°C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 0.8 0.9 1.0 C T - Junction Capacitance (pF) 250 200 150 100 50 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62820 S13-0196-Rev. A, 28-Jan-13 For technical questions, contact: [email protected] www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SiA817EDJ Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 85 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.02 0.05 Single Pulse 0.1 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62820. Document Number: 62820 S13-0196-Rev. A, 28-Jan-13 For technical questions, contact: [email protected] www.vishay.com 8 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000