Si8810EDB www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) a 0.072 at VGS = 4.5 V 2.9 0.079 at VGS = 2.5 V 2.8 0.092 at VGS = 1.8 V 2.6 0.125 at VGS = 1.5 V 2.2 VDS (V) 20 MICRO FOOT® 0.8 x 0.8 S 3 xxx xx • Ultra small 0.8 mm x 0.8 mm outline • Ultra thin 0.357 mm height • Typical ESD protection 2000 V (HBM) 3 nC • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS S 2 D • Portable devices such as cell phones, smart phones, and tablet PCs - Load switch 8 0. m m 1 • TrenchFET® power MOSFET Qg (TYP.) 0.8 mm Backside View - Small signal switch 1 G G - High speed switching 4 D Bump Side View Marking Code: xx = AJ xxx = Date/Lot traceability code Ordering Information: Si8810EDB-T2-E1 (lead (Pb)-free and halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 TA = 70 °C 2.3 a ID TA = 25 °C 2.1 b 1.7 b TA = 70 °C Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current IDM TA = 25 °C 0.7 a IS TA = 25 °C 0.4 b 0.9 a TA = 70 °C 0.6 a PD TA = 25 °C W 0.5 b 0.3 b TA = 70 °C Operating Junction and Storage Temperature Range A 15 TA = 25 °C Maximum Power Dissipation V 2.9 a TA = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to +150 Soldering Recommendations (Peak Temperature) c °C 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, d Maximum Junction-to-Ambient b, e SYMBOL t≤5s RthJA TYPICAL MAXIMUM 105 135 200 260 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. Maximum under steady state conditions is 185 °C/W. e. Maximum under steady state conditions is 330 °C/W. S15-0346-Rev. B, 23-Feb-15 Document Number: 62829 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8810EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 20 - - - V 21 - - -2.7 - VDS = VGS , ID = 250 μA 0.4 - 0.9 VDS = 0 V, VGS = ± 4.5 V - - ± 0.5 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a IGSS IDSS ID(on) RDS(on) gfs ID = 250 μA VDS = 0 V, VGS = ± 8 V - - ±5 VDS = 20 V, VGS = 0 V - - 1 VDS = 20 V, VGS = 0 V, TJ = 55 °C - - 10 VDS ≥ 5 V, VGS = 4.5 V 10 - - VGS = 4.5 V, ID = 1 A - 0.058 0.072 VGS = 2.5 V, ID = 1 A - 0.063 0.079 VGS = 1.8 V, ID = 1 A - 0.072 0.092 VGS = 1.5 V, ID = 0.5 A - 0.080 0.125 VDS = 10 V, ID = 1 A - 12 - - 245 - mV/°C V μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 8 V, ID = 1 A VDS = 10 V, VGS = 4.5 V, ID = 1 A f = 1 MHz td(on) tr td(off) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 1 Ω - 55 - - 25 - - 5.2 8 - 3 4.5 - 0.35 - - 0.45 - - 5 - - 7 15 - 12 25 - 25 50 tf - 7 15 td(on) - 5 10 tr td(off) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 8 V, Rg = 1 Ω tf pF nC Ω ns - 10 20 - 15 30 - 7 15 - - 0.7 - - 15 - 0.7 1.2 V - 11 20 ns - 5 10 nC - 7 - - 4 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C IS = 1 A, VGS = 0 V IF = 1 A, dI/dt = 100 A/μs, TJ = 25 °C A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-0346-Rev. B, 23-Feb-15 Document Number: 62829 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8810EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 2.50 10-3 1.50 IGSS - Gate Current (A) IGSS - Gate Current (mA) 2.00 TJ = 25 °C 1.00 10-4 TJ = 150 °C 10-5 TJ = 25 °C 10-6 10-7 0.50 10-8 10-9 0.00 0 4 8 12 16 0 4 VGS - Gate-Source Voltage (V) 8 12 16 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 10 VGS = 5 V thru 2 V 8 ID - Drain Current (A) ID - Drain Current (A) 12 VGS = 1.5 V 9 6 3 6 4 TC = 25 °C TC = 125 °C 2 TC = - 55 °C VGS = 1 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.200 2.0 350 VGS = 1.5 V 300 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.160 0.120 VGS = 1.8 V 0.080 VGS = 4.5 V 0.040 VGS = 2.5 V 250 200 150 100 Coss Crss 50 0.000 0 0 3 6 9 12 15 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance vs. Drain-to-Source Voltage S15-0346-Rev. B, 23-Feb-15 Document Number: 62829 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8810EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VDS = 6 V ID = 1 A 6 TJ = 150 °C IS - Source Current (A) VGS - Gate-to-Source Voltage (V) 8 VDS = 3 V 4 VDS = 9.6 V 10 TJ = 25 °C 1 2 0.1 0 0 1 2 3 4 5 0.0 6 0.2 0.4 0.6 0.8 1.0 Qg - Total Gate Charge (nC) VSD - Source-to-Drain Voltage (V) Gate Charge Source-Drain Diode Forward Voltage 1.2 0.8 1.5 1.4 0.7 VGS = 1.5 V; ID = 0.5A 1.3 0.6 VGS(th) (V) RDS(on) - On-Resistance (Normalized) VGS = 4.5 V, 3.7 V, 2.5 V; ID = 1A 1.2 1.1 0.5 ID = 250 μA 0.4 1.0 0.3 0.9 0.2 0.8 - 50 - 25 0 25 50 75 100 125 - 50 150 0 25 50 75 TJ - Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage 100 125 150 14 0.200 12 ID = 1 A 0.160 10 Power (W) RDS(on) - On-Resistance (Ω) - 25 TJ - Junction Temperature (°C) 0.120 TJ = 125 °C 0.080 8 6 4 TJ = 25 °C 0.040 2 0.000 0 1 2 3 4 5 0 0.001 VGS - Gate-to-Source Voltage (V) 1 Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) S15-0346-Rev. B, 23-Feb-15 0.01 0.1 10 100 1000 Document Number: 62829 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8810EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 1 ms 100 ms 0.1 10 s 1 s, 10 ms DC TA = 25 °C BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 0.8 3.0 Power Dissipation (W) ID - Drain Current (A) 2.5 2.0 1.5 1.0 0.6 0.4 0.2 0.5 0.0 0.0 0 25 50 75 100 125 TA - Ambient Temperature (°C) Current Derating* 150 25 50 75 100 125 150 T A - Ambient Temperature (°C) Power Derating Note When mounted on 1" x 1" FR4 with full copper. * The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S15-0346-Rev. B, 23-Feb-15 Document Number: 62829 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8810EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 185 °C/W 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with maximum copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 330 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 4. Surface Mounted 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62829. S15-0346-Rev. B, 23-Feb-15 Document Number: 62829 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch) D S e S e XXX S D S S 4x Ø b G D S AK Mark on Backside of die A2 4-Ø 0.205 to 0.225 Note 5 Solder Mask ~Ø 0.215 A1 A e b k b1 e Bump Note 2 Note 4 Notes (1) Laser mark on the backside surface of die (2) Bumps are 95.5 % Sn,3.8 % Ag,0.7 % Cu (3) “i” is the location of pin 1 (4) “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. (5) Non-solder mask defined copper landing pad. DIM. MILLIMETERS a INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.328 0.365 0.402 0.0129 0.0144 0.0158 A1 0.136 0.160 0.184 0.0053 0.0062 0.0072 A2 0.192 0.205 0.218 0.0076 0.0081 0.0086 b 0.200 0.220 0.240 0.0078 0.0086 0.0094 b1 0.175 0.0068 e 0.400 0.0157 S 0.160 0.180 0.200 0.0062 0.0070 0.0078 D 0.720 0.760 0.800 0.0283 0.0299 0.0314 K 0.040 0.070 0.100 0.0015 0.0027 0.0039 Note a. Use millimeters as the primary measurement. ECN: T15-0053-Rev. A, 16-Feb-15 DWG: 6033 Revision: 16-Feb-15 1 Document Number: 69442 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000