V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V, 16 A with RDS(on) max. = 380 mW at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP16N50C-E3, SiHF16N50C-E3, SiHB16N50C-E3, SiHG16N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel with Gen. 6.4 Cell Technology KEY BENEFITS • Vishay’s Gen. 6.4 cell technology minimizes on-resistance and withstand high energy pulses • 16 A, 500 V, RDS(on) max. = 380 mW at VGS = 10 V • Low gate charge: Qg max. = 68 nC • 100 % avalanche tested APPLICATIONS • PFC boost circuit topology • PWM half bridge topology • LLC topology RESOURCES • Datasheets: SiHP16N50C-E3, SiHF16N50C-E3, SiHB16N50C-E3 http://www.vishay.com/doc?91401 SiHG16N50C-E3 - http://www.vishay.com/doc?91418 • More featured products: http://www.vishay.com/ref/featuredmosfets • For technical questions, contact: [email protected] • Material categorization: For definitions of compliance please see http://www.vishay.com/doc?99912 One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0246-1208 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . I INNOVAT 19 62-2012 Part Number www.vishay.com High-Voltage MOSFETs - 500 V N-Channel with Gen. 6.4 Cell Technology Vishay High-Voltage MOSFETs TO-220AB TO-220 FULLPAK D G D S D2PAK (TO-263) GD S G TO-247AC S G D G S D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-220AB TO-247AC SiHP16N50C-E3 SiHG16N50C-E3 D2PAK (TO-263) SiHB16N50C-E3 SiHB16N50CTR-E3 SiHB16N50CTL-E3 TO-220 FULLPAK SiHF16N50C-E3 THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Junction-to-Ambient (PCB mount)a SYMBOL RthJA RthJC RthJA TO220AB, D2PAK(TO-263) 62 0.5 40 TO-247AC TO-220 FULL PAK UNIT 40 0.5 65 3.3 °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 8 A VDS = 50 V, ID = 3 A 500 3.0 - 0.6 0.31 3 5.0 ± 100 50 250 0.38 - V V/°C V nA VGS = 0 V, VDS = 25 V, f = 1.0 MHz - 1900 230 24 45 18 22 27 156 29 31 1.6 68 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductancea IDSS RDS(on) gfs μA Ω S Dynamic Revision: 13-Jun-11 MOSFETs - 500 V, 16 A with RDS(on) max. = 380 mW at VGS = 10 V O L OGY SiHP16N50C-E3, SiHF16N50C-E3, SiHB16N50C-E3, SiHG16N50C-E3 AND TEC N HN POWER MOSFETs O Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Input Resistance Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Rg VGS = 10 V Revision: xx-Xxx-xx ID = 16 A, VDS = 400 V VDD = 250 V, ID = 16 A, Rg = 9.1 Ω, VGS = 10 V f = 1 MHz, open drain pF nC ns Ω Document Number: xxxxx 1 2/2 VMN-PT0246-1208 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO PRODUCT SHEET SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000