Product Sheet

V I S H AY I N T E R T E C H N O L O G Y, I N C .
MOSFETs - 500 V, 16 A with RDS(on) max. = 380 mW at VGS = 10 V
AND TEC
I
INNOVAT
O L OGY
SiHP16N50C-E3, SiHF16N50C-E3,
SiHB16N50C-E3, SiHG16N50C-E3
N
HN
POWER MOSFETs
O
19
62-2012
High-Voltage MOSFETs - 500 V N-Channel with Gen. 6.4 Cell Technology
KEY BENEFITS
• Vishay’s Gen. 6.4 cell technology minimizes on-resistance and withstand high energy
pulses
• 16 A, 500 V, RDS(on) max. = 380 mW at VGS = 10 V
• Low gate charge: Qg max. = 68 nC
• 100 % avalanche tested
APPLICATIONS
• PFC boost circuit topology
• PWM half bridge topology
• LLC topology
RESOURCES
• Datasheets: SiHP16N50C-E3, SiHF16N50C-E3, SiHB16N50C-E3 http://www.vishay.com/doc?91401
SiHG16N50C-E3 - http://www.vishay.com/doc?91418
• More featured products: http://www.vishay.com/ref/featuredmosfets
• For technical questions, contact: [email protected]
• Material categorization: For definitions of compliance please see
http://www.vishay.com/doc?99912
One of the World’s Largest Manufacturers of
Discrete Semiconductors and Passive Components
PRODUCT SHEET
1/2
VMN-PT0246-1208
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V I S H AY I N T E R T E C H N O L O G Y, I N C .
I
INNOVAT
19
62-2012
Part Number
www.vishay.com
High-Voltage
MOSFETs - 500 V N-Channel with Gen. 6.4 Cell Technology
Vishay
High-Voltage MOSFETs
TO-220AB
TO-220 FULLPAK
D
G
D
S
D2PAK (TO-263)
GD S
G
TO-247AC
S
G D
G
S
D
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB
TO-247AC
SiHP16N50C-E3
SiHG16N50C-E3
D2PAK (TO-263)
SiHB16N50C-E3
SiHB16N50CTR-E3
SiHB16N50CTL-E3
TO-220 FULLPAK
SiHF16N50C-E3
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Junction-to-Ambient (PCB mount)a
SYMBOL
RthJA
RthJC
RthJA
TO220AB,
D2PAK(TO-263)
62
0.5
40
TO-247AC
TO-220 FULL PAK
UNIT
40
0.5
65
3.3
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material)
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 8 A
VDS = 50 V, ID = 3 A
500
3.0
-
0.6
0.31
3
5.0
± 100
50
250
0.38
-
V
V/°C
V
nA
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
-
1900
230
24
45
18
22
27
156
29
31
1.6
68
-
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductancea
IDSS
RDS(on)
gfs
μA
Ω
S
Dynamic
Revision: 13-Jun-11
MOSFETs - 500 V, 16 A with RDS(on) max. = 380 mW at VGS = 10 V
O L OGY
SiHP16N50C-E3, SiHF16N50C-E3,
SiHB16N50C-E3, SiHG16N50C-E3
AND TEC
N
HN
POWER MOSFETs
O
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 10 V
Revision: xx-Xxx-xx
ID = 16 A, VDS = 400 V
VDD = 250 V, ID = 16 A,
Rg = 9.1 Ω, VGS = 10 V
f = 1 MHz, open drain
pF
nC
ns
Ω
Document Number: xxxxx
1
2/2
VMN-PT0246-1208
For technical questions, contact:
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE
SUBJECT
TO SPECIFIC
DISCLAIMERS,
SET FORTH
AT www.vishay.com/doc?91000
THIS DOCUMENT IS SUBJECT TO
CHANGE
WITHOUT
NOTICE.
THE PRODUCTS
DESCRIBED
HEREIN AND THIS DOCUMENT ARE SUBJECT TO
PRODUCT SHEET
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000