Si8489EDB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) (Ω) MAX. ID (A) a, e 0.044 at VGS = -10 V -5.4 0.054 at VGS = -4.5 V -4.9 0.082 at VGS = -2.5 V -3.9 Qg (TYP.) 9.5 nC 1 x xxx xx x m m 1 • Small 1 mm x 1 mm max. outline area • Low 0.548 mm max. profile • Typical ESD protection 2500 V HBM • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 MICRO FOOT® 1 x 1 S 3 • TrenchFET® power MOSFET S 2 APPLICATIONS S • Load switches and charger switches • Battery management m 1m Backside View 1 G • For smart phones and tablet PCs 4 D Bump Side View G Marking Code: xxxx = 8489 xxx = Date / lot traceability code D P-Channel MOSFET Ordering Information: Si8489EDB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ± 12 TA = 70 °C TA = 25 °C ID Continuous Source-Drain Diode Current IDM TC = 25 °C TA = 25 °C IS TA = 70 °C TA = 25 °C PD Package Reflow Conditions c -1.5 a -0.65 b 1.1 a 0.78 b W 0.5 b TA = 70 °C Operating Junction and Storage Temperature Range A -20 1.8 a TA = 25 °C Maximum Power Dissipation -4.3 a -3.6 b -2.8 b TA = 70 °C Pulsed Drain Current (t = 300 μs) V -5.4 a TA = 25 °C Continuous Drain Current (TJ = 150 °C) UNIT TJ, Tstg -55 to 150 VPR 260 IR/Convection 260 °C Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s. b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on TA = 25 °C. S15-1510-Rev. B, 29-Jun-15 Document Number: 62752 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient a, b t = 10 s Maximum Junction-to-Ambient c, d t = 10 s TYPICAL MAXIMUM 55 70 125 160 RthJA UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper. d. Maximum under steady state conditions is 190 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = -250 μA -20 - - V - -15 - - 2.4 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance a Dynamic RDS(on) gfs ID = -250 μA VDS = VGS, ID = -250 μA -0.5 - -1.2 VDS = 0 V, VGS = ± 4.5 V - - ±1 VDS = 0 V, VGS = ± 12 V - - ±5 VDS = -20 V, VGS = 0 V - - -1 -10 VDS = -20 V, VGS = 0 V, TJ = 70 °C - - VDS ≤ -5 V, VGS = -4.5 V -10 - - VGS = -10 V, ID = -1.5 A - 0.036 0.044 VGS = -4.5 V, ID = -1.5 A - 0.045 0.054 VGS = -2.5 V, ID = -1 A - 0.065 0.082 VDS = -10 V, ID = -1.5 A - 10 - - 765 - - 125 - - 115 - - 17.5 27 - 8.6 13 - 1.5 - - 2.6 - - 14 - - 27 50 mV/°C V μA A Ω S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time S15-1510-Rev. B, 29-Jun-15 VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, VGS = -10 V, ID = -1.5 A VDS = -10 V, VGS = -4.5 V, ID = -1.5 A VGS = -0.1 V, f = 1 MHz td(on) tr VDD = -10 V, RL = 10 Ω ID ≅ -1.5 A, VGEN = -4.5 V, Rg = 1 Ω - 20 40 - 50 100 tf - 25 50 td(on) - 6 15 td(off) tr td(off) tf VDD = -10 V, RL = 10 Ω ID ≅ -1.5 A, VGEN = -8 V, Rg = 1 Ω - 8 20 - 68 130 - 28 60 pF nC Ω ns Document Number: 62752 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb TEST CONDITIONS MIN. TYP. MAX. TA = 25 °C - - -1.5 - -0.8 25 9 15 10 -20 -1.2 50 20 - IS = -1.5 A, VGS = 0 V IF = -1.5 A, dI/dt = 100 A/μs, TJ = 25 °C UNIT A V ns nC ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 60 10-3 IGSS - Gate Current (A) IGSS - Gate Current (mA) 50 40 TJ = 25 °C 30 20 10 10-4 10-5 TJ = 150 °C 10-6 TJ = 25 °C 10-7 10-8 0 0 3 6 9 12 VGS - Gate-Source Voltage (V) 15 18 10-9 0 Gate Current vs. Gate-Source Voltage 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) 18 Gate Current vs. Gate-Source Voltage 20 20 VGS = 5 V thru 3 V 16 ID - Drain Current (A) ID - Drain Current (A) 16 VGS = 2.5 V 12 8 VGS = 2 V 12 TC = 25 °C 8 TC = 125 °C 4 4 TC = - 55 °C VGS = 1.5 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics S15-1510-Rev. B, 29-Jun-15 3.0 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) 3.0 Transfer Characteristics Document Number: 62752 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1200 0.20 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1000 VGS = 2.5 V 0.15 0.10 VGS = 4.5 V 800 600 400 0.05 Coss 200 VGS = 10 V Crss 0.00 0 0 4 8 12 ID - Drain Current (A) 16 20 0 4 8 12 16 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 100 VDS = 5 V ID = 1.5 A 8 IS - Source Current (A) VGS - Gate-to-Source Voltage (V) 10 6 VDS = 10 V 4 VDS = 16 V TJ = 150 °C 10 TJ = 25 °C 1 2 0.1 0 0 4 8 12 16 Qg - Total Gate Charge (nC) 0.0 20 Gate Charge 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 1.2 Source-Drain Diode Forward Voltage 1.4 1.0 VGS = 10 V, ID = 1.5 A 1.3 0.9 1.2 VGS(th) (V) RDS(on) - On-Resistance (Normalized) 20 1.1 0.8 ID = 250 μA 0.7 1.0 0.6 0.9 VGS = 4.5, 2.5 V, ID = 1.5 A 0.8 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 On-Resistance vs. Junction Temperature S15-1510-Rev. B, 29-Jun-15 150 0.5 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 Threshold Voltage Document Number: 62752 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 25 0.20 20 Power (W) RDS(on) - On-Resistance (Ω) ID = 1.5 A 0.15 TJ = 125 °C 0.10 15 10 TJ = 25 °C 0.05 5 0.00 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 0.001 5 On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 1 ms 10 ms 0.1 100 ms 10 s, 1s DC TA = 25 °C Note • When mounted on 1" x 1" FR4 with full copper. BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 5 1.5 4 1.2 Power Dissipation (W) ID - Drain Current (A) Safe Operating Area, Junction-to-Ambient Note a. The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 3 2 0.9 0.6 0.3 1 0.0 0 0 25 50 75 100 125 150 25 50 75 100 125 TA - Ambient Temperature (°C) TA - Ambient Temperature (°C) Current Derating a Power Derating S15-1510-Rev. B, 29-Jun-15 150 Document Number: 62752 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si8489EDB www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 190 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62752. S15-1510-Rev. B, 29-Jun-15 Document Number: 62752 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix MICRO FOOT®: 4-Bumps (1 mm x 1 mm, 0.5 mm Pitch, 0.286 mm Bump Height) 4x Ø b1 S D G 4x 0.30 to 0.31 (Note 3) Solder mask-0.4 s e e XXXX XXX S D Mark on backside of die s e e D Recommended land pattern A2 b A1 A b1 Note 5 K Bump (Note 1) Notes 1. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu. 2. Backside surface is coated with a Ti/Ni/Ag layer. 3. Non-solder mask defined copper landing pad. 4. Laser mark on the backside surface of die. 5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined. 6. • is the location of pin 1 DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.458 0.504 0.550 0.0180 0.0198 0.0217 A1 0.214 0.250 0.286 0.0084 0.0098 0.0113 A2 0.244 0.254 0.264 0.0096 0.0100 0.0104 b 0.297 0.330 0.363 0.0117 0.0130 0.0143 b1 0.250 e 0.500 0.0098 0.0197 s 0.210 0.230 0.250 0.0083 0.0091 0.0096 D 0.920 0.960 1.000 0.0362 0.0378 0.0394 K 0.029 0.065 0.102 0.0011 0.0026 0.0040 Note • Use millimeters as the primary measurement. ECN: T15-0176-Rev. A, 27-Apr-15 DWG: 6039 Revision: 27-Apr-15 1 Document Number: 69370 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000