SiSS23DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0045 at VGS = - 4.5 V - 50e 0.0063 at VGS = - 2.5 V - 50e 0.0115 at VGS = - 1.8 V - 50e Qg (Typ.) 93 nC • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK 1212-8S APPLICATIONS 3.3 mm S 1 3.3 mm D 8 D 7 D 6 S 2 S 3 0.75 mm G 4 • Smart Phones, Tablet PCs, Mobile Computing - Battery Switch - Load Switch - Power Management - Battery Management S G D 5 Bottom View D Ordering Information: SiSS23DN-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 TC = 70 °C TA = 25 °C ID IDM TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C Avalanche Current L = 0.1 mH Single-Pulse Avalanche Energy IS TC = 70 °C TA = 25 °C - 200 A - 47.5 - 4a, b IAS - 23 26 mJ 57 PD 36 4.8a, b W 3a, b TA = 70 °C Operating Junction and Storage Temperature Range - 27a, b EAS TC = 25 °C Maximum Power Dissipation - 50e - 21a, b TA = 70 °C Pulsed Drain Current (t = 100 µs) V - 50e TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg c, d Soldering Recommendations (Peak Temperature) - 50 to 150 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 62852 S13-1162-Rev. A, 13-May-13 For technical questions, contact: [email protected] www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS23DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Case (Drain) Symbol RthJA RthJC t 10 s Steady State Typical 21 1.7 Maximum 26 2.2 Unit °C/W Notes: a.Surface mounted on 1" x 1" FR4 board. b.Maximum under steady state conditions is 63 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Symbol Test Conditions Min. VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS VGS = 0 V, ID = - 250 µA - 20 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Ciss Coss Crss Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currentd Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A IS TC = 25 °C ISM VSD trr Qrr ta tb f = 1 MHz VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 4.5 V, Rg = 1 VDD = - 10 V, RL = 1 ID - 10 A, VGEN = - 10 V, Rg = 1 IF = - 10 A IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C mV/ °C - 0.9 ± 100 -1 - 10 - 20 0.5 V nA µA A 0.0035 0.0051 0.0081 44 VDS = - 15 V, VGS = - 10 V, ID = - 20 A Unit V - 0.4 VDS = - 15 V, VGS = 0 V, f = 1 MHz Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf Max. - 12 3.4 ID = - 250 µA VDS = VGS, ID = - 250 µA VDS = 0 V, VGS = ± 8 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 °C VDS - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 20 A VGS = - 2.5 V, ID = - 10 A VGS = - 1.8 V, ID = - 10 A VDS = - 10 V, ID = - 20 A Typ. 8840 835 900 195 93 12 21 2.6 45 50 140 50 15 5 150 40 - 0.8 30 15 16 14 0.0045 0.0063 0.0115 S pF 300 140 5.2 90 100 280 100 30 10 300 80 - 50c - 200 - 1.2 60 30 nC ns A V ns nC ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. d. t = 100 µs. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 62852 S13-1162-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS23DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 5 V thru 2.5 V 20 ID - Drain Current (A) 80 16 ID - Drain Current (A) VGS = 2 V 60 40 20 12 TC = 25 °C 8 TC = 125 °C 4 VGS = 1.5 V TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 1.5 2.0 Transfer Characteristics 0.0300 12 000 VGS = 1.8 V 0.0250 10 000 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 1.0 VGS - Gate-to-Source Voltage (V) 0.0200 0.0150 0.0100 8000 6000 4000 VGS = 2.5 V 0.0050 Crss 2000 VGS = 4.5 V Coss 0.0000 0 0 20 40 60 80 100 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 10 VDS = 10 V 6 VDS = 5 V VDS = 16 V 4 VGS = 4.5 V 1.4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 20 A ID = 20 A 8 VGS = 2.5 V 1.2 VGS = 1.8 V 1.0 0.8 2 0.6 0 0 40 80 120 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62852 S13-1162-Rev. A, 13-May-13 160 200 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature For technical questions, contact: [email protected] www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS23DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.020 100 RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 20 A 0.016 TJ = 150 °C 10 TJ = 25 °C 1 0.012 0.008 TJ = 125 °C 0.004 TJ = 25 °C 0.000 0.1 0.0 0.2 0.4 0.6 0.8 0 1.0 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.9 100 0.8 80 0.7 Power (W) VGS(th) (V) 0.6 0.5 ID = 250 μA 0.4 60 40 0.3 20 0.2 0.1 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 us 10 1 ms 10 ms 1 0.1 100 ms 1s 10 s DC TA = 25 °C Single pulse BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 62852 S13-1162-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS23DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 70 100 60 50 60 Power (W) ID - Drain Current (A) 80 Package Limited 40 40 30 20 20 10 0 0 0 25 50 75 100 125 0 150 TC - Case Temperature (°C) 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power, Junction-to-Case * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Document Number: 62852 S13-1162-Rev. A, 13-May-13 For technical questions, contact: [email protected] www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiSS23DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 0.1 0.0001 Single Pulse 0.001 0.01 0.1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62852. www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 62852 S13-1162-Rev. A, 13-May-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Case Outline for PowerPAK® 1212-8S D z 8 7 6 5 1 2 3 4 D1 5 6 7 8 2 1 L K E E1 K1 d 0.10 C 2X d 0.10 C 2X 3 0.10 C C A3 A f e b 4 0.08 C A1 d DIM. MILLIMETERS MIN. NOM. A 0.67 A1 0 INCHES MAX. MIN. NOM. MAX. 0.75 0.83 0.027 0.030 0.033 - 0.05 0 - 0.002 A3 0.20 REF 0.008 REF b 0.30 BSC 0.012 BSC 3.30 BSC D D1 2.15 0.130 BSC 2.35 0.084 1.80 0.063 3.30 BSC E E1 2.25 1.60 1.70 0.088 0.092 0.130 BSC 0.067 0.071 e 0.65 BSC 0.026 BSC K 0.76 TYP 0.030 TYP K1 0.41 TYP 0.016 TYP L 0.43 BSC 0.017 BSC z 0.525 TYP 0.021 TYP ECN: C12-0200-Rev. A, 12-Mar-12 DWG: 6008 Note • Millimeters will govern. Revision: 12-Mar-12 1 Document Number: 63919 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000