SiSS23DN Datasheet

SiSS23DN
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) () Max.
ID (A)
0.0045 at VGS = - 4.5 V
- 50e
0.0063 at VGS = - 2.5 V
- 50e
0.0115 at VGS = - 1.8 V
- 50e
Qg (Typ.)
93 nC
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 0.75 mm
Profile
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PowerPAK 1212-8S
APPLICATIONS
3.3 mm
S
1
3.3 mm
D
8
D
7
D
6
S
2
S
3
0.75 mm
G
4
• Smart Phones, Tablet PCs, Mobile
Computing
- Battery Switch
- Load Switch
- Power Management
- Battery Management
S
G
D
5
Bottom View
D
Ordering Information:
SiSS23DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
±8
TC = 70 °C
TA = 25 °C
ID
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
Avalanche Current
L = 0.1 mH
Single-Pulse Avalanche Energy
IS
TC = 70 °C
TA = 25 °C
- 200
A
- 47.5
- 4a, b
IAS
- 23
26
mJ
57
PD
36
4.8a, b
W
3a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
- 27a, b
EAS
TC = 25 °C
Maximum Power Dissipation
- 50e
- 21a, b
TA = 70 °C
Pulsed Drain Current (t = 100 µs)
V
- 50e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
c, d
Soldering Recommendations (Peak Temperature)
- 50 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 62852
S13-1162-Rev. A, 13-May-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS23DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
t 10 s
Steady State
Typical
21
1.7
Maximum
26
2.2
Unit
°C/W
Notes:
a.Surface mounted on 1" x 1" FR4 board.
b.Maximum under steady state conditions is 63 °C/W.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Symbol
Test Conditions
Min.
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
- 20
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Ciss
Coss
Crss
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currentd
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A
IS
TC = 25 °C
ISM
VSD
trr
Qrr
ta
tb
f = 1 MHz
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
VDD = - 10 V, RL = 1 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
IF = - 10 A
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
mV/
°C
- 0.9
± 100
-1
- 10
- 20
0.5
V
nA
µA
A
0.0035
0.0051
0.0081
44
VDS = - 15 V, VGS = - 10 V, ID = - 20 A
Unit
V
- 0.4
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Max.
- 12
3.4
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 8 V
VDS = - 20 V, VGS = 0 V
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
VDS  - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 20 A
VGS = - 2.5 V, ID = - 10 A
VGS = - 1.8 V, ID = - 10 A
VDS = - 10 V, ID = - 20 A
Typ.
8840
835
900
195
93
12
21
2.6
45
50
140
50
15
5
150
40
- 0.8
30
15
16
14
0.0045
0.0063
0.0115

S
pF
300
140
5.2
90
100
280
100
30
10
300
80
- 50c
- 200
- 1.2
60
30
nC

ns
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
d. t = 100 µs.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 62852
S13-1162-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS23DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
VGS = 5 V thru 2.5 V
20
ID - Drain Current (A)
80
16
ID - Drain Current (A)
VGS = 2 V
60
40
20
12
TC = 25 °C
8
TC = 125 °C
4
VGS = 1.5 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1.5
2.0
Transfer Characteristics
0.0300
12 000
VGS = 1.8 V
0.0250
10 000
Ciss
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1.0
VGS - Gate-to-Source Voltage (V)
0.0200
0.0150
0.0100
8000
6000
4000
VGS = 2.5 V
0.0050
Crss
2000
VGS = 4.5 V
Coss
0.0000
0
0
20
40
60
80
100
0
5
10
15
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.6
10
VDS = 10 V
6
VDS = 5 V
VDS = 16 V
4
VGS = 4.5 V
1.4
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 20 A
ID = 20 A
8
VGS = 2.5 V
1.2
VGS = 1.8 V
1.0
0.8
2
0.6
0
0
40
80
120
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62852
S13-1162-Rev. A, 13-May-13
160
200
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS23DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.020
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 20 A
0.016
TJ = 150 °C
10
TJ = 25 °C
1
0.012
0.008
TJ = 125 °C
0.004
TJ = 25 °C
0.000
0.1
0.0
0.2
0.4
0.6
0.8
0
1.0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
100
0.8
80
0.7
Power (W)
VGS(th) (V)
0.6
0.5
ID = 250 μA
0.4
60
40
0.3
20
0.2
0.1
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
Limited by RDS(on)*
ID - Drain Current (A)
100
100 us
10
1 ms
10 ms
1
0.1
100 ms
1s
10 s
DC
TA = 25 °C
Single pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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For technical questions, contact: [email protected]
Document Number: 62852
S13-1162-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS23DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
100
60
50
60
Power (W)
ID - Drain Current (A)
80
Package Limited
40
40
30
20
20
10
0
0
0
25
50
75
100
125
0
150
TC - Case Temperature (°C)
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 62852
S13-1162-Rev. A, 13-May-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS23DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62852.
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For technical questions, contact: [email protected]
Document Number: 62852
S13-1162-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-8S
D
z
8
7
6
5
1
2
3
4
D1
5
6
7
8
2
1
L
K
E
E1
K1
d 0.10 C
2X
d 0.10 C
2X
3
0.10 C
C
A3
A
f
e
b
4
0.08 C
A1
d
DIM.
MILLIMETERS
MIN.
NOM.
A
0.67
A1
0
INCHES
MAX.
MIN.
NOM.
MAX.
0.75
0.83
0.027
0.030
0.033
-
0.05
0
-
0.002
A3
0.20 REF
0.008 REF
b
0.30 BSC
0.012 BSC
3.30 BSC
D
D1
2.15
0.130 BSC
2.35
0.084
1.80
0.063
3.30 BSC
E
E1
2.25
1.60
1.70
0.088
0.092
0.130 BSC
0.067
0.071
e
0.65 BSC
0.026 BSC
K
0.76 TYP
0.030 TYP
K1
0.41 TYP
0.016 TYP
L
0.43 BSC
0.017 BSC
z
0.525 TYP
0.021 TYP
ECN: C12-0200-Rev. A, 12-Mar-12
DWG: 6008
Note
• Millimeters will govern.
Revision: 12-Mar-12
1
Document Number: 63919
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single
0.152
(3.860)
0.039
0.068
(0.990)
(1.725)
0.010
(0.255)
(2.390)
0.094
0.088
(2.235)
0.016
(0.405)
0.026
(0.660)
0.025
0.030
(0.635)
(0.760)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72597
Revision: 21-Jan-08
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Revision: 02-Oct-12
1
Document Number: 91000