SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)f 0.0110 at VGS = - 10 V - 50e 0.0195 at VGS= - 4.5 V - 43.5 VDS (V) - 30 • TrenchFET® Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 0.75 mm Profile • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) 23 nC Thin PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 3 G 4 D 8 0.75 mm S • Load Switch • Adaptor Switch • Notebook PC S G D 7 D 6 D 5 Bottom View Ordering Information: SiS439DNT-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol Limit VDS VGS - 30 ± 20 - 50e - 43.5 - 14.7a, b - 11.7a, b - 90 - 43.4 - 3.2a, b - 25 31.25 52.1 3.3 3.8a, b 2.4a, b - 50 to 150 260 TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current (t = 100 μs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg Unit V A mJ W °C Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. f. Based on TC = 25 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b t 10 s Symbol RthJA Typical 26 Maximum 33 Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 Unit °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 81 °C/W. S13-1667-Rev. A, 29-Jul-13 Document Number: 62869 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS= 0 V, ID = - 250 μA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ ID = - 250 μA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 5 - 1.2 - 2.8 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V,VGS = - 10 V RDS(on) V - 22 - 20 μA A VGS = - 10 V, ID = - 14 A 0.0091 0.0110 VGS = - 4.5 V, ID = - 11 A 0.0156 0.0195 VDS = - 15 V, ID = - 14 A 37 S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time 2135 VDS = - 15 V, VGS = 0 V, f = 1 MHz 395 pF 335 VDS = - 15 V, VGS = - 10 V, ID = - 14.4 A VDS = - 15 V, VGS = - 4.5 V, ID = - 14.4 A 45 68 23 35 7.2 nC 10.4 Rg f = 1 MHz td(on) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 4.5 V, Rg = 1 tr 0.4 1.8 3.6 38 60 33 50 27 41 tf 12 20 td(on) 14 21 td(off) VDD = - 15 V, RL = 1.5 ID - 10 A, VGEN = - 10 V, Rg = 1 tr td(off) tf 5 10 36 54 6 12 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 50 - 90 IF = - 10 A IF = - 10 A, dI/dt = 100 A/μs, TJ = 25 °C A - 0.8 - 1.2 V 22 35 ns 15 25 nC 13 9 ns Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1667-Rev. A, 29-Jul-13 Document Number: 62869 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 2 VGS = 10 V thru 5 V VGS = 4.5 V VGS = 4 V 1.5 ID - Drain Current (A) ID - Drain Current (A) 45 30 15 TC = 25 °C 1 0.5 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 0 2 0.7 1.4 2.1 2.8 3.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 3300 2640 0.02 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.025 VGS = 4.5 V 0.015 VGS = 10 V 0.01 Ciss 1980 1320 660 0.005 Coss Crss 0 0 0 15 30 45 60 0 6 ID - Drain Current (A) 12 On-Resistance vs. Drain Current and Gate Voltage 30 1.6 VDS = 8 V ID = 14 A 8 VGS = 10 V 1.4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 24 Capacitance 10 ID = 14.7 A 18 VDS - Drain-to-Source Voltage (V) VDS = 15 V 6 4 VDS = 24 V 2 VGS = 4.5 V 1.2 1 0.8 0.6 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge S13-1667-Rev. A, 29-Jul-13 50 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 62869 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.040 100 RDS(on) - On-Resistance (Ω) ID = 14 A IS - Source Current (A) 0.030 TJ = 150 °C 10 0.020 TJ = 25 °C 1 TJ = 125 °C 0.010 TJ = 25 °C 0.1 0.000 0.0 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) 1.2 2 Source-Drain Diode Forward Voltage 2.2 10 On-Resistance vs. Gate-to-Source Voltage 50 ID = 250 μA 1.98 40 Power (W) 1.76 VGS(th) (V) 4 6 8 VGS - Gate-to-Source Voltage (V) 1.54 1.32 30 20 10 1.1 - 50 - 25 0 25 50 75 100 125 150 0 0.01 0.1 TJ - Temperature (°C) Threshold Voltage 1.0 Time (s) 10 100 1000 Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on)* ID - Drain Current (A) 100 μs 10 1 ms 10 ms 1 100 ms 10 s, 1 s 0.1 DC 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe OperArea, Junction-to-Ambient S13-1667-Rev. A, 29-Jul-13 Document Number: 62869 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 ID - Drain Current (A) 45 Package Limited 30 15 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 64 2.0 48 1.5 Power (W) Power (W) Current Derating* 32 16 0.5 0 0.0 0 1.0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 TA - Ambient Temperature (°C) 125 150 Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-1667-Rev. A, 29-Jul-13 Document Number: 62869 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62869. S13-1667-Rev. A, 29-Jul-13 Document Number: 62869 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 TYP. 0.0185 TYP. D5 2.3 TYP. 0.090 TYP. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 0.34 TYP. E4 0.013 TYP. e 0.65 BSC 0.026 BSC K 0.86 TYP. 0.034 TYP. K1 0.35 - - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008 0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 TYP. 0.005 TYP. ECN: T13-0056-Rev. A, 18-Feb-13 DWG: 6012 Revison: 18-Feb-13 1 Document Number: 62836 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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