VISHAY TFDT4500

TELEFUNKEN
Semiconductor
TFDU4100/TFDS4500/TFDT4500
2.7–5.5V Serial Infrared Transceiver Module Family
(SIR, 115.2 kbit/s)
Features
Compliant to IrDA 1.2 (up to
115.2 kbit/s)
Wide Operating Voltage Range
(2.7 to 5.5 V )
Low Power Consumption
(1.3 mA Supply Current)
Power Sleep Mode Through
VCC1/SD Pin (5 nA Sleep
Current)
Long Range (up to 3.0 m at 115.2
kbit/s)
Three Surface Mount Package
Options
– Universal (9.7 x 4.7 x 4.0 mm)
– Side View (13.0 x 5.95 x 5.3 mm)
– Top View (13.0 x 7.6 x 5.95 mm)
Applications
BabyFace (Universal) Package
Capable of Surface Mount
Solderability to Side- and
Top-View Orientation
Directly Interfaces with Various
Super I/O and Controller Devices
and TEMIC’s TOIM3000 and
TOIM3232 I/Os
Few External Components
Required
Backward Compatible to All
TEMIC SIR Infrared
Transceivers
Built–in EMI Protection – No
External Shielding Necessary
Notebook Computers, Desktop
PCs, Palmtop Computers (Win
CE, Palm PC), PDAs
Digital Still and Video Cameras
Printers, Fax Machines,
Photocopiers, Screen Projectors
Telecommunication Products
(Cellular Phones, Pagers)
Internet TV Boxes, Video
conferencing systems
External Infrared Adapters
(Dongles)
Medical and Industrial Data
Collection Devices
Description
The TFDU4100, TFDS4500, and TFDT4500 are a family
of low-power infrared transceiver modules compliant to
the IrDA 1.2 standard for serial infrared (SIR) data
communication, supporting IrDA speeds up to 115.2
kbit/s. Integrated within the transceiver modules are a
photo PIN diode, infrared emitter (IRED), and a
low-power analog control IC to provide a total front–end
solution in a single package. TEMIC’s SIR transceivers
are available in three package options, including our
BabyFace package (TFDU4100), the smallest SIR
transceiver available on the market. This wide selection
provides flexibility for a variety of applications and space
constraints.
The transceivers are capable of directly interfacing with
a wide variety of I/O chips which perform the pulse-width
modulation/demodulation function, including TEMIC’s
TOIM3000 and TOIM3232.
At a minimum, a
current-limiting resistor in series with the infrared emitter
and a Vcc bypass capacitor are the only external
components required to implement a complete solution.
Package Options
TFDU4100
Baby Face (Universal)
TFDS4500
Side View
TFDT4500
Top View
This product is currently in devleopment. Inquiries regarding the status of this product should be directed to TEMIC Marketing.
Pending—Rev. A, 03-Apr-98
1
Pre-Release Information
TELEFUNKEN
TFDU4100/TFDS4500/TFDT4500
Semiconductor
Functional Block Diagram
VCC1/SD
VCC2
Driver
Amplifier
Rxd
Comparator
RS
IRED Anode
AGC
Logic
SC
Txd
IRED Cathode
Open Collector Driver
GND
Pin Assignment and Description
Pin Number
“ U ”, “ T ”
Option
“S”
Option
Function
1
8
IRED Anode
2
1
IRED Cathode
3
7
Txd
4
2
5
Description
I/O
Active
Transmit Data Input
I
HIGH
Rxd
Received Data Output, push–pull CMOS driver output capable of driving a
standard CMOS or TTL load. No external pull–up or pull–down resistor is
required (20 kΩ resistor internal to device). Pin is inactive during
transmission.
O
LOW
6
NC
Do not connect
6
3
VCC1/ SD
7
5
SC
I
HIGH
8
4
GND
IRED anode, should be externally connected to VCC2 through a current
control resistor
IRED cathode, internally connected to driver transistor
Supply Voltage/Shutdown (see “Shutdown” on page 6)
Sensitivity control
Ground
8
IRED
7
6
5
Detector
IRED
Detector
1 2 3 4 5 6 7 8
1
IRED
”U” Option
BabyFace (Universal)
2
3
4
Detector
”S” Option
Side View
2
1
2
3
4
5
6 7
8
”T” Option
Top View
Pending—Rev. A, 03-Apr-98
Pre-Release Information
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Semiconductor
TFDU4100/TFDS4500/TFDT4500
Ordering Information
Part Number
Qty/ Reel
Description
TFDU4100–TR3
1000 pcs
Oriented in carrier tape for side view surface mounting
TFDU4100–TT3
1000 pcs
Oriented in carrier tape for top view surface mounting
TFDS4500–TR3
750 pcs
TFDT4500–TR3
750 pcs
Absolute Maximum Ratings
Parameter
Symbol
Supply Voltage Range
VCC1
Voltage Range of IRED Drive Output
VCC2
Test Conditionsa
IRED anode pin, Txd LOW
Minb
Typc
Maxb
– 0.5
6
– 0.5
6
Input Currentsd
10
Output Sink Current
25
Power Dissipatione
Junction Temperature
PD
200
TJ
Tamb
–25
85
Storage Temperature Range
Tstg
–25
85
t = 20 s
Average IRED Current
IIRED (DC)
Repetitive Pulsed IRED Current
IIRED (RP)
IRED Anode Voltage at Current Output
215
100
t < 90µs, ton<20%
mW
°C
mA
500
– 0.5
6
Transmitter Data Input Voltage
VTxd
– 0.5
Vcc + 0.5
Receiver Data Output Voltage
VRxd
– 0.5
d
2.5
Maximum Intensity for Class 1 Operation of
IEC 825 or EN60825g
mA
240
VIREDA
Virtual Source Sizef
V
125
Ambient Temperature Range (Operating)
Soldering Temperature
Unit
EN60825, 1997
V
Vcc + 0.5
2.8
mm
400
mW/sr
Notes
a. Reference point GND pin unless otherwise noted.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. All pins except IRED cathode pin and IRED anode pin.
e. See Derating Curve
f. Method: (1-1/e) encircled energy.
g. Worst case IrDA SIR pulse pattern.
Pending—Rev. A, 03-Apr-98
3
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TFDU4100/TFDS4500/TFDT4500
Semiconductor
Electrical Characteristics
Parameter
Symbol
Test Conditionsa
Minb
Typc
Maxb
Unit
Transceiver
Supply Voltage
VCC1
Receive Mode
2.7
5.5
Supply Voltage
VCC1
Transmit Mode, R2 = 51 Ω
2.0
5.5
Supply
pp y Current,, VCC1 Pin
(Receive Mode)
Supply
pp y Current,, VCC1 Pin ((avg)
g)
(Transmit Mode) d
VCC1= 5.5V
1.3
2.5
VCC1= 2.7V
1.0
1.5
VCC1= 5.5V
5.0
5.5
VCC1= 2.7V
3.5
4.5
VCC1= OFF, Txd = LOW, VCC2 = 6V,
T = 25°– 85° C
0.005
0.5
IS
IS
Leakage Current of IR Emitter, IRED
Anode Pin
IS
Transceiver Power On Settling Time
IS
V
mA
µA
µs
50
Optoelectronic Characteristics
Parameter
Symbol
Test Conditionsa
Eemin
α = ±15_, SIR Mode, SC = LOW
Minb
Typc
Maxb
20
35
Unit
Receiver
Min Detection Threshold Irradiancee
Min Detection Threshold Irradianced
Max Detection Threshold Irradianced
Logic Low Receiver Input Irradiance
α = ±15_, SIR Mode, SC = LOW,
VCC1 = 2.7V
35
Eemin
α = ±15_, SIR Mode, SC = HIGH
6
Eemax
α = ± 90_, SIR Mode, VCC1 = 5V
3.3
5
α = ± 90_, SIR Mode, VCC1 = 3V
8
15
10
15
kW/m2
4
mW/m2
0.8
V
Eemax (low)
SC = HIGH or LOW
VOL
Active, C = 15 pF, R = 2.2 kΩ
VOH
Non–active, C = 15 pF, R = 2.2 kΩ
Rise Time
tr
C = 15 pF, R = 2.2 kΩ
20
1400
Fall Time
tf
C = 15 pF, R = 2.2 kΩ
20
200
Rxd Pulse Width of Output Signal
1.41
8
Rxd Output Voltage
Output Current
0.5
VCC–0.5
VOL < 0.8V
Pw
115.2 kbit/s mode
Jitterf
tj
Over a period of 10 bit, 115.2 kbit/s
Latency
tL
mW/m2
4
mA
2
100
500
ns
µs
µs
Notes
a. Tamb = 25_C, VCC = 2.7 – 5.5 V unless otherwise noted.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. IIRED (peak) = 210 mA (At IRED Anode pin)
e. BER = 10–8 (IrDA specification).
f. Leading edge of output signal.
4
Pending—Rev. A, 03-Apr-98
Pre-Release Information
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Semiconductor
TFDU4100/TFDS4500/TFDT4500
Optoelectronic Characteristics (Cont’d)
Parameter
Test Conditionsa
Symbol
Minb
Typc
Maxb
Unit
0.3
0.4
A
Transmitter
IRED Operating Currentd
ID
Current limiting resistor is series to
IRED: R1 = 8.2 Ω, VCC2 = 5V
Logic Low Transmitter Input Voltage
VIL (Txd)
0
0.8
Logic High Transmitter Input Voltage
VIH (Txd)
2.4
VCC1+0.5
Output Radiant Intensitye
IeH
Current limiting resistor in series to
IRED: R1 = 8.2Ω @ VCC2 = 5V, α =
±15_
Output Radiant Intensity
IeL
Logic Low Level
Angle of Half Intensity
α
Peak Wavelength of Emission
λP
45
140
200
mW/sr
0.04
mW/sr
±24
_
880
900
Halfwidth of Emission Spectrum
Optical Rise Time, Fall Time
nm
60
tR, tF
115.2 kHz square wave signal, duty
cycle 1:1
200
Optical Overshoot
Rising Edge Peak–to–Peak Jitter
V
tj
Over a period of 10 bits, independent
of information content
600
ns
25
%
0.2
µs
Notes
a. Tamb = 25_C, VCC = 2.7 – 5.5 V unless otherwise noted.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. IRED Operating Current can be adjusted by variation of R1
e. In agreement with IEC 825 eye safety limit
Recommended Circuit Diagram
The only required components for designing an IrDA 1.2
compatible design using TEMIC SIR transceivers are a
current limiting resistor to the IRED. However,
depending on the entire system design and board layout,
additional components may be required (see Figure 1).
It is recommended that the capacitors C1 and C2 are
positioned as near as possible to the transceiver power
supply pins, as in the proposed layout in Figure 1. A
tantalum capacitor should be used for C1, while a ceramic
capacitor should be used for C2 to suppress RF noise.
Also, when connecting the described circuit to the power
supply, low impedance wiring should be used.
R1 is used for controlling the current through the IR
emitter. For increasing the output power of the IRED, the
value of the resistor should be reduced. Similarly, to
reduce the output power of the IRED, the value of the
resistor should be increased. For typical values of R1 see
Fig 2. For IrDA compliant operation, a current control
resistor of 8–12 Ω is recommended. The upper drive
current limitation is dependent on the duty cycle and is
given by the absolute maximum ratings on the data sheet
and the eye safety limitations given by IEC825–1.
VCC2
VCC1/SD
TFDx4x00
IRED
IRED
Cathode Anode
R2
Rxd
Txd
Rxd
C1
R1
C2
Txd
VCC1/SD
SC
GND
NC
GND
SC
Note: Outlined components are optional depending on quality of
power supply.
Figure 1. Recommended Application Circuit
R2, C1 and C2 are optional and dependent on the quality
of the supply voltage VCC1 and injected noise. An
Pending—Rev. A, 03-Apr-98
5
Pre-Release Information
TFDU4100/TFDS4500/TFDT4500
unstable power supply with dropping voltage during
transmission may reduce sensitivity (and transmission
range) of the transceiver.
Table 1. Recommended Application Circuit Components
Component
Recommended Value
C1
100 nF, Ceramic (use 470 nF for less stable power
supplies)
C2
1 µF, Tantalum
R1
8.2 Ω, 0.25 W (recommend using two 0.125 W
resistors in parallel)
R2
22 – 47 Ω, 0.125 W
The sensitivity control (SC) pin allows the minimum
detection irradiance threshold of the transceiver to be
lowered when set to a logic HIGH. Lowering the
irradiance threshold increases the sensitivity to infrared
signals and increases transmission range up to 3 meters.
However, setting the SC pin to logic HIGH also makes
the transceiver more susceptible to transmission errors
due to an increased sensitivity to fluorescent light
distrubances. It is recommended to set the SC pin to logic
LOW or left open if the increased range is not required or
if the system will be operating in bright ambient light.
The guide pins on the side-view and top-view packages
are internally connected to ground but should not be
connected to the system ground to avoid ground loops.
They should be used for mechanical purposes only and
should be left floating.
300
Intensity Ie (mW/sr)
250
200
5.25 V, Min. Efficiency,
Min. VF, Min. RDSon
150
4.75 V, Min. Efficiency,
Min. VF, Max. RDSon
100
TELEFUNKEN
Semiconductor
Shutdown
The internal switch for the IRED in TEMIC SIR
transceivers is designed to be operated like an open
collector driver. Thus, the VCC2 source can be an
unregulated power supply while only a well regulated
power source with a supply current of 1.3 mA connected
to VCC1/SD is needed to provide power to the remainder
of the transceiver circuitry in receive mode. In transmit
mode, this current is slightly higher (approxiamately 4
mA average at 3V supply current) and the voltage is not
required to be kept as stable as in receive mode. A voltage
drop of VCC1 is acceptable down to about 2.2V when
buffering the voltage directly from the VCC1 pin to GND
by a 470 nF ceramic capacitor (C1) and a 51 Ω serial
resistor (R2) is used (see figure 1).
This configuration minimizes the influence of high
current surges from the IRED on the internal analog
control circuitry of the transceiver and the application
circuit. Also, board space and cost savings can be
achieved by eliminating the additional linear regulator
normally needed for the IRED’s high current
requirements.
The transceiver can be very efficiently shutdown by
keeping the IRED connected to the power supply VCC2
but switching off VCC1/SD. The power source to
VCC1/SD can be provided directly from a microcontroller
(see Figure 3). In shutdown, current loss is realized only
as leakage current through the current limiting resistor to
the IRED (typically, 5 nA). The settling time after
switching VCC1/SD on again is approxiamately 50 µs.
TEMIC’s TOIM3232 interface circuit is designed for this
shutdown feature. The Vcc_SD, S0 or S1 outputs on the
TOIM3232 can be used to power the transceiver with the
necessary supply current.
50
IrDA Field of View: Cone of 15_
0
4.0
6.0
8.0
10.0
12.0
14.0
Current Control Resistor, Rl ()
Figure 2. Ie vs Rl
16.0
If the microcontroller or the microprocessor is unable to
drive the 1.3-mA supply current required by the
transceiver, a low-cost SOT-23 pnp transistor can be used
to switch voltage on and off from the regulated power
supply (see figure 4). The additional component cost is
minimal and saves the system designer additional power
supply costs.
6
Pending—Rev. A, 03-Apr-98
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TFDU4100/TFDS4500/TFDT4500
Shutdown (Cont’d)
IIRED
Power Supply
+
_
Regulated Power Supply
50 mA
RILIM
IRED
Anode
Microcontroller or
Microprocessor
20 mA
TFDU4100 (Note: Typical Values Listed)
Receive Mode
@5 V: IIRED = 300 mA, IS = 1.3 mA
@2.7 V: IIRED = 300 mA, IS = 1.0 mA
Transmit Mode
@5 V: IIRED = 300 mA, IS = 5 mA (Avg.)
@2.7 V: IIRED = 300 mA, IS = 3.5 mA (Avg.)
IS
VCC1/SD
Figure 3.
IIRED
Power Supply
+
_
Regulated Power Supply
50 mA
R1
IRED
Anode
TFDU4100 (Note: Typical Values Listed)
Receive Mode
@5 V: IIRED = 300 mA, IS = 1.3 mA
@2.7 V: IIRED = 300 mA, IS = 1.0 mA
Transmit Mode
@5 V: IIRED = 300 mA, IS = 5 mA (Avg.)
@2.7 V: IIRED = 300 mA, IS = 3.5 mA (Avg.)
IS
Microcontroller or
Microprocessor
20 mA
VCC1/SD
Figure 4.
Pending—Rev. A, 03-Apr-98
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Pre-Release Information
TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
TFDU4100 – BabyFace (Universal) Package
Mechanical Dimensions
8
Pending—Rev. A, 03-Apr-98
Pre-Release Information
TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
TFDS4500 – Side View Package
Mechanical Dimensions
Pending—Rev. A, 03-Apr-98
9
Pre-Release Information
TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
TFDT4500 – Top View Package
Mechanical Dimensions
10
Pending—Rev. A, 03-Apr-98
Pre-Release Information
TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
Recommended SMD Pad Layouta
TFDU4100 Ć BabyFace (Universal) Package
TFDT4500 Ć Top View Package
TFDS4500 Ć Side View Package
a.
(note: leads of the device should be at least 0.3
mm within the ends of the pads. Pad 1 is longer to
designate pin 1 connection to transciver)
The leads of the device should be soldered in the center position.
Pending—Rev. A, 03-Apr-98
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TFDU4100/TFDS4500/TFDT4500
Semiconductor
Recommended Solder Profile
260
10 s Max. @ 230 _C
240
220
2 – 4 _C/Seconds
C)
200
Temperature (
_
180
160
140
120 – 180 Seconds
90 s Max.
120
100
80
2 – 4 _C/Seconds
60
40
20
0
0
50
100
150
200
250
300
350
Time (Seconds)
Current Derating Curve
600
Peak Operating Current (mA)
500
400
300
Current derating as a function of the
maximum forward current of IRED.
Maximum duty cycle: 20%
200
100
0
–40
–20
0
20
40
60
80
100
120
140
Temperature (_C)
12
Pending—Rev. A, 03-Apr-98
Pre-Release Information