VISHAY SISS27DN

SiSS27DN
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) () Max.
ID (A)
0.0056 at VGS = - 10 V
- 50e
0.0070 at VGS = - 6 V
- 50e
0.0090 at VGS = - 4.5 V
- 50e
Qg (Typ.)
45 nC
PowerPAK 1212-8S
APPLICATIONS
3.3 mm
S
1
3.3 mm
D
8
D
7
D
6
S
2
S
3
• TrenchFET® Power MOSFET
• Low Thermal Resistance PowerPAK®
Package with Small Size and Low 0.75 mm
Profile
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
0.75 mm
G
4
• Notebook Computers and Mobile
Computing
- Adaptor Switch
- Load Switch
- DC/DC Converter
- Power Management
S
G
D
5
Bottom View
D
Ordering Information:
SiSS27DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
TC = 70 °C
TA = 25 °C
ID
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
TA = 25 °C
Avalanche Current
L = 0.1 mH
Single-Pulse Avalanche Energy
IS
TC = 70 °C
TA = 25 °C
- 200
A
- 47.5
- 4a, b
- 25
EAS
31
mJ
57
PD
36
4.8a, b
W
3a, b
TA = 70 °C
Operating Junction and Storage Temperature Range
- 23a, b
IAS
TC = 25 °C
Maximum Power Dissipation
- 50e
- 18.5a, b
TA = 70 °C
Pulsed Drain Current (t = 100 µs)
V
- 50e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
c, d
Soldering Recommendations (Peak Temperature)
- 50 to 150
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Package limited.
Document Number: 62847
S13-1161-Rev. A, 13-May-13
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, b
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
t 10 s
Steady State
Typical
21
1.7
Maximum
26
2.2
Unit
°C/W
Notes:
a.Surface mounted on 1" x 1" FR4 board.
b.Maximum under steady state conditions is 63 °C/W.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Symbol
Test Conditions
Min.
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
- 30
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs
Ciss
Coss
Crss
Total Gate Charge
Qg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currentd
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
VDS = - 15 V, VGS = - 4.5 V, ID = - 20 A
IS
TC = 25 °C
ISM
VSD
trr
Qrr
ta
tb
f = 1 MHz
VDD = - 15 V, RL = 1.5 
ID  - 10 A, VGEN = - 4.5 V, Rg = 1 
VDD = - 15 V, RL = 1.5 
ID  - 10 A, VGEN = - 10 V, Rg = 1 
IF = - 10 A
IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C
mV/
°C
- 2.2
± 100
-1
- 10
- 20
0.6
V
nA
µA
A
0.0046
0.0058
0.0073
52
VDS = - 15 V, VGS = - 10 V, ID = - 20 A
Unit
V
-1
VDS = - 15 V, VGS = 0 V, f = 1 MHz
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Max.
- 22
5.7
ID = - 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = - 30 V, VGS = 0 V
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS  - 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 15 A
VGS = - 6 V, ID = - 10 A
VGS = - 4.5 V, ID = - 5 A
VDS = - 15 V, ID = - 15 A
Typ.
5250
530
485
92
45
15
16
3
60
45
50
20
16
5
65
10
- 0.8
30
21
16
14
0.0056
0.0070
0.0090

S
pF
140
70
6
120
90
100
40
30
10
130
20
- 50c
- 200
- 1.2
60
40
nC

ns
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
d. t = 100 µs.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 62847
S13-1161-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
20
VGS = 10 V thru 5 V
VGS = 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
80
60
40
20
12
TC = 25 °C
8
4
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.0120
3.0
3.5
7000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
6000
VGS = 4.5 V
0.0090
VGS = 6 V
0.0060
VGS = 10 V
0.0030
5000
Ciss
4000
3000
2000
Coss
1000
Crss
0.0000
0
0
20
40
60
80
100
0
5
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
30
1.6
10
ID = 20 A
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
VGS = 10 V
VDS = 10 V
6
VDS = 5 V
VDS = 16 V
4
2
ID = 15 A
1.4
VGS = 6 V
1.2
VGS = 4.5 V
1.0
0.8
0.6
0
0
20
40
60
80
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62847
S13-1161-Rev. A, 13-May-13
100
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
For technical questions, contact: [email protected]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.020
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 15 A
0.016
TJ = 150 °C
10
1
TJ = 25 °C
0.1
0.012
TJ = 125 °C
0.008
TJ = 25 °C
0.004
0.000
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
2.0
100
1.8
80
Power (W)
VGS(th) (V)
1.6
1.4
ID = 250 μA
60
40
1.2
20
1.0
0.8
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
Limited by RDS(on)*
ID - Drain Current (A)
100
100 μs
10
1 ms
10 ms
1
100 ms
1s
10 s
0.1
TA = 25 °C
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
For technical questions, contact: [email protected]
Document Number: 62847
S13-1161-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
100
60
50
60
Power (W)
ID - Drain Current (A)
80
Package Limited
40
40
30
20
20
10
0
0
0
25
50
75
100
125
0
150
25
50
TC - Case Temperature (°C)
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
0.05
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 63 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
0.0001
0.001
4. Surface Mounted
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Document Number: 62847
S13-1161-Rev. A, 13-May-13
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiSS27DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62847.
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 62847
S13-1161-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
Case Outline for PowerPAK® 1212-8S
D
z
8
7
6
5
1
2
3
4
D1
5
6
7
8
2
1
L
K
E
E1
K1
d 0.10 C
2X
d 0.10 C
2X
3
0.10 C
C
A3
A
f
e
b
4
0.08 C
A1
d
DIM.
MILLIMETERS
MIN.
NOM.
A
0.67
A1
0
INCHES
MAX.
MIN.
NOM.
MAX.
0.75
0.83
0.027
0.030
0.033
-
0.05
0
-
0.002
A3
0.20 REF
0.008 REF
b
0.30 BSC
0.012 BSC
3.30 BSC
D
D1
2.15
0.130 BSC
2.35
0.084
1.80
0.063
3.30 BSC
E
E1
2.25
1.60
1.70
0.088
0.092
0.130 BSC
0.067
0.071
e
0.65 BSC
0.026 BSC
K
0.76 TYP
0.030 TYP
K1
0.41 TYP
0.016 TYP
L
0.43 BSC
0.017 BSC
z
0.525 TYP
0.021 TYP
ECN: C12-0200-Rev. A, 12-Mar-12
DWG: 6008
Note
• Millimeters will govern.
Revision: 12-Mar-12
1
Document Number: 63919
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000