SiA461DJ Datasheet

New Product
SiA461DJ
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
- 20
ID
(A)a
0.033 at VGS = - 4.5 V
- 12
0.042 at VGS = - 2.5 V
- 12
0.055 at VGS = - 1.8 V
- 12
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Qg (Typ.)
18 nC
APPLICATIONS
• Smart Phones, Tablet PCs, Mobile Computing
- Battery Switch
- Charger Switch
- Load Switch
PowerPAK SC-70-6L-Single
1
D
2
(4) S
D
3
6
G
D
5
(3) G
BVX
S
D
2.05 mm
Marking Code
Part # code
S
XXXX
2.05 mm
Lot Traceability
and Date code
4
(1, 2, 5, 6) D
Ordering Information:
SiA461DJ-T1-GE3 (Lead (Pb)-free and Halogen free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IDM
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
ID
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
IS
PD
TJ, Tstg
Limit
- 20
±8
Unit
V
- 12a
- 12a
- 8.3b, c
- 6.6b, c
- 20
- 12a
- 2.8b, c
17.9
11.4
3.4b, c
2.2b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t5s
29
37
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Steady State
Maximum Junction-to-Case (Drain)
5.5
7
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63838
S12-0539-Rev. A, 12-Mar-12
For more information please contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA461DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
V
- 18
mV/°C
3
- 0.4
-1
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 85 °C
- 10
VDS - 5 V, VGS = - 4.5 V
- 20
µA
A
VGS - 4.5 V, ID = - 5.2 A
0.025
0.033
RDS(on)
VGS - 2.5 V, ID = - 4.8 A
0.030
0.042
VGS - 1.8 V, ID = - 2 A
0.040
0.055
gfs
VDS = - 6 V, ID = - 5.2 A
20

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
1300
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 8 V, ID = - 5.2 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 5.2 A
tr
Rise Time
td(off)
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
45
18
27
2.1
nC
VDD = - 10 V, RL = 2.4 
ID  - 4.2 A, VGEN = - 4.5 V, Rg = 1 

6
20
30
22
35
75
tf
20
30
td(on)
10
15
12
25
50
75
15
25
td(off)
VDD = - 10 V, RL = 2.4 
ID  - 4.2 A, VGEN = - 8 V, Rg = 1 
tf
Fall Time
30
50
tr
Rise Time
Turn-Off Delay Time
pF
4.8
f = 1 MHz
td(on)
Turn-On Delay Time
210
180
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward
Currenta
IS
TC = 25 °C
- 12
ISM
VSD
Body Diode Voltage
- 20
IS = - 4.2 A
- 0.8
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
45
70
ns
Body Diode Reverse Recovery Charge
Qrr
40
60
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 4.2 A, dI/dt = 100 A/µs, TJ = 25 °C
23
22
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For more information please contact: [email protected]
Document Number: 63838
S12-0539-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA461DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
10
VGS = 5 V thru 2 V
8
ID - Drain Current (A)
ID - Drain Current (A)
16
VGS = 1.5 V
12
8
4
6
TC = 25 °C
4
TC = 125 °C
2
VGS = 1 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
0.0
0.3
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.5
2500
0.08
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2000
0.06
VGS = 1.8 V
0.04
VGS = 2.5 V
Ciss
1500
1000
0.02
VGS = 4.5 V
500
Coss
Crss
0
0.00
0
4
8
12
ID - Drain Current (A)
16
20
0
4
On-Resistance vs. Drain Current and Gate Voltage
12
16
20
Capacitance
8
1.5
R DS(on) - On-Resistance (Normalized)
ID = 5.2 A
VGS - Gate-to-Source Voltage (V)
8
VDS - Drain-to-Source Voltage (V)
6
VDS = 10 V
VDS = 16 V
4
2
0
0
5
10
15
20
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63838
S12-0539-Rev. A, 12-Mar-12
25
30
1.4
VGS = 4.5 V; 2.5 V; ID = 5.2 A
1.3
1.2
1.1
VGS = 1.8 V; ID = 2 A
1.0
0.9
0.8
0.7
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
For more information please contact: [email protected]
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA461DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.08
RDS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 5.2 A
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.06
0.04
TJ = 125 °C
TJ = 25 °C
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
5
30
0.8
25
0.7
Power (W)
VGS(th) (V)
20
0.6
ID = 250 µA
0.5
15
10
0.4
5
0.3
0.2
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
TJ - Temperature (°C)
Threshold Voltage
1
Time (s)
10
100
1000
Single Pulse Power
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
DC
0.1
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area
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For more information please contact: [email protected]
Document Number: 63838
S12-0539-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA461DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
24
20
16
15
Power (W)
ID - Drain Current (A)
20
Package Limited
10
12
8
5
4
0
0
0
25
50
75
100
125
150
0
25
50
75
100
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
125
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63838
S12-0539-Rev. A, 12-Mar-12
For more information please contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA461DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.1
0.2
Notes:
Notes:
Notes:
0.1
P
PDM
DM
DM
P
DM
0.05
tt1111
tt2222
tt1111
1. Duty
Duty Cycle,
Cycle, D
D ==
1.
tt2222
80 °C/W
°C/W
2.
2.
Per
Per
Unit
Unit
Base
Base
=
=
R
R
thJA
thJA =
== 80
80
°C/W
2. Per Unit Base = RthJA
0.02
thJA
(t)
(t)
3. TTJM
TA
= PDM
ZthJA
(t)
3.
JM -- T
DMZ
thJA(t)
JM
A
thJA
JM
AA = PDM
DM
thJA
4.
4. Surface
Surface Mounted
Mounted
4.
Surface
Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63838.
www.vishay.com
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For more information please contact: [email protected]
Document Number: 63838
S12-0539-Rev. A, 12-Mar-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000