V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with 20 A, 500 V, RDS(on) max . = 270 mW at VGS = 10 V I INNOVAT AND TEC O L OGY SiHS20N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Gen. 6.4 Cell Technology in Super TO-247 Package KEY BENEFITS • • • • 20 A, 500 V, RDS(on) max. = 270 mW at VGS = 10 V Improved gate charge: Qg max. = 76 nC Low FOM: RDS(on) x Qg = 20.52 WnC High peak current capability APPLICATIONS • PFC circuits • PWM half bridges • LLC topologies RESOURCES • • • • Datasheet: SiHS20N50C - http://www.vishay.com/doc?91424 More featured products: http://www.vishay.com/ref/featuredmosfets For technical questions, contact: [email protected] Material categorization: For definitions of compliance please see http://www.vishay.com/doc?99912 One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0260-1208 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . I INNOVAT SiHS20N50C-E3 SiHS20N50C 62-2012 Vishay Siliconix High-Voltage MOSFETs - 500 V N-Channel Gen. 6.4 Power MOSFET Cell Technology in Super TO-247 Package FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • • • • • • • • 560 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested High Peak Current Capability dV/dt Ruggedness Improved trr/Qrr Improved Gate Charge High Power Dissipations Capability Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Super-247 G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free Super-247 SiHS20N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C)e VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta UNIT V 20 ID A 11 IDM 80 1.8 W/°C Single Pulse Avalanche Energyb EAS 361 mJ Maximum Power Dissipation PD 250 W Peak Diode Recovery dV/dtc dV/dt 5 V/ns TJ, Tstg - 55 to + 150 Linear Derating Factor Operating Junction and Storage Temperature Range Revision: 31-Jan-11 MOSFETs - 500 V with 20 A, 500 V, RDS(on) max . = 270 mW at VGS = 10 V 19 O L OGY POWER MOSFETs AND TEC N HN O Soldering Recommendations (Peak Temperature) °C 300d for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A. c. ISD ≤ 18 A, dI/dt ≤ 380 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Limited by maximum junction temperature. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 0.5 Document Number: 91424 S11-0112-Rev. B, 31-Jan-11 PRODUCT SHEET UNIT °C/W www.vishay.com 1 2/2 VMN-PT0260-1208 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000