SiA453EDJ Datasheet

SiA453EDJ
www.vishay.com
Vishay Siliconix
P-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) () (Max.)
ID (A)a
0.0185 at VGS = - 10 V
- 24
0.0235 at VGS = - 4.5 V
- 21
0.0260 at VGS = - 3.7 V
- 20
0.0377 at VGS = - 2.5 V
- 10
Qg (Typ.)
21 nC
PowerPAK SC-70-6L-Single
APPLICATIONS
1
D
2
3
6
G
5
S
D
2.05 mm
S
S
• Portable Devices such as Smart Phones,
Tablet PCs and Mobile Computing
- Load Switch
- Power Management
- Input Protection Switch (over 
voltage, reverse voltage)
D
D
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg and UIS Tested
• Typical ESD Protection: 4000 V (HBM)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
G
Marking Code
2.05 mm
4
B2X
Part # code
Ordering Information:
SiA453EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
XXX
Lot Traceability
and Date code
P-Channel MOSFET
Unit
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 12
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
- 24
- 19
ID
- 10b, c
- 8b, c
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
Single Avalanche Current
Single Avalanche Energy
IDM
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 70 °C
TA = 25 °C
- 16
IS
- 2.9b, c
IAS
- 10
EAS
5
mJ
19
12
PD
W
3.5b, c
2.2b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
- 80
TC = 25 °C
Maximum Power Dissipation
V
TJ, Tstg
- 50 to 150
Soldering Recommendations (Peak Temperature)d, e
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
Typical
Maximum
t5s
RthJA
28
36
Steady State
RthJC
5.3
6.5
Unit
°C/W
Notes
a. TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
S13-1271-Rev. A, 27-May-13
Document Number: 62864
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA453EDJ
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 μA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
ID = - 250 μA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 μA
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
Transconductancea
V
- 21
- 0.6
- 1.4
VDS = 0 V, VGS = ± 12 V
±4
VDS = 0 V, VGS = ± 4.5 V
± 0.5
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
VDS  - 5 V, VGS = - 10 V
RDS(on)
gfs
mV/°C
3.1
V
μA
- 10
- 10
A
VGS = - 10 V, ID = - 5 A
0.0150
0.0185
VGS = - 4.5 V, ID = - 5 A
0.0185
0.0235
VGS = - 3.7 V, ID = - 5 A
0.0205
0.0260
VGS = - 2.5 V, ID = - 2 A
0.0290
0.0377
VGS = - 15 V, ID = - 5 A
22

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1900
VDS = - 15 V, VGS = 0 V, f = 1 MHz
160
pF
145
VDS = - 15 V, VGS = - 10 V, ID = - 11 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 11 A
44
66
21
32
3.9
nC
5.9
f = 1 MHz
td(on)
VDD = - 15 V, RL = 1.7 
ID  - 9 A, VGEN = - 4.5 V, Rg = 1 
tr
td(off)
1.8
9
18
25
50
45
90
65
130
tf
28
55
td(on)
10
20
5
10
90
180
25
50
VDD = - 15 V, RL = 1.7 
ID  - 9 A, VGEN = - 10 V, Rg = 1 
tr
td(off)
tf

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 16
- 80
IS = - 9 A, VGS = 0 V
IF = - 9 A, dI/dt = 100 A/μs, TJ = 25 °C
A
- 0.85
- 1.2
V
22
45
ns
20
40
nC
16
6
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1271-Rev. A, 27-May-13
Document Number: 62864
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA453EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
20
10-3
12
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
16
TJ = 25 °C
8
10-4
TJ = 150 °C
10-5
10-6
TJ = 25 °C
10-7
4
10-8
10-9
0
0
4
8
12
16
0
20
4
Gate Current vs. Gate-Source Voltage
80
8
12
16
20
VGS - Gate-to-Source Voltage (V)
VGS - Gate-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
20
VGS = 10 V thru 5 V
VGS = 4 V
16
ID - Drain Current (A)
ID - Drain Current (A)
60
VGS = 3 V
40
12
TC = 25 °C
8
20
TC = 125 °C
4
VGS = 2 V
TC = - 55 °C
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.5
3000
0.060
VGS = 2.5 V
2500
VGS = 4.5 V
0.040
VGS = 3.7 V
0.030
0.020
VGS = 10 V
0.010
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.050
Ciss
2000
1500
1000
Coss
500
Crss
0
0.000
0
20
40
60
80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
S13-1271-Rev. A, 27-May-13
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 62864
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA453EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
VDS = 10 V
ID = 11 A
8
6
VDS = 5 V
VDS = 16 V
4
1.8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
10
2
VGS = 4.5 V, 3.7 V
1.4
VGS = 2.5 V
1.2
1.0
0.8
0.6
0
0.4
0
10
20
30
40
50
- 50
- 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.050
TJ = 150 °C
ID = 5 A
0.040
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
VGS = 10 V
ID = 5 A
1.6
10
TJ = 25 °C
1
0.030
TJ = 125 °C
0.020
TJ = 25 °C
0.010
0.1
0.000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.1
30
1.0
25
0.9
Power (W)
VGS(th) (V)
20
0.8
0.7
ID = 250 μA
15
10
0.6
5
0.5
0.4
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
TJ - Temperature (°C)
Threshold Voltage
S13-1271-Rev. A, 27-May-13
Single Pulse Power, Junction-to-Ambient
Document Number: 62864
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA453EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 µs
1 ms
1
10 ms
0.1
100 ms
10 s
1s
TA = 25 °C
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
30
20
Power Dissipation (W)
ID - Drain Current (A)
25
20
15
10
15
10
5
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
TC - Case Temperature (°C)
150
Power Derating






* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S13-1271-Rev. A, 27-May-13
Document Number: 62864
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA453EDJ
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case



















Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62864.
S13-1271-Rev. A, 27-May-13
Document Number: 62864
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
www.vishay.com
11
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000