SiA929DJ Datasheet

New Product
SiA929DJ
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) () Max.
ID (A)
0.064 at VGS = - 10 V
- 4.5a
0.078 at VGS = - 4.5 V
- 4.5a
0.120 at VGS = - 2.5 V
- 4.5a
Qg (Typ.)
6.6 nC
PowerPAK SC-70-6 Dual
1
S1
2
G1
APPLICATIONS
3
D2
D1
D1
6
• Load Switch and Battery Management for Smart Phones,
Tablet PCs and Portable Media Players
• Fast Battery Charging
D2
G2
5
2.05 mm
4
S2
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
2.05 mm
S1
Marking Code
S2
DNX
Part # code
G1
XXX
G2
Lot Traceability
and Date Code
Ordering Information:
SiA929DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
P-Channel MOSFET
D1
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Unit
V
4.5a
ID
IDM
Pulsed Drain Current (t = 300 µs)
Limit
- 30
± 12
IS
PD
TJ, Tstg
- 4.5a
- 4.3b, c
- 3.4b, c
- 15
- 4.5a
- 1.6b, c
7.8
5
1.9b, c
1.2b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t5s
52
65
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
12.5
16
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 63398
S11-1654-Rev. A, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA929DJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
1.5
- 0.6
- 1.1
V
± 100
nA
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
VDS - 5 V, VGS = - 10 V
RDS(on)
V
- 23
- 10
µA
A
VGS = - 10 V, ID = - 3 A
0.052
0.064
VGS = - 4.5 V, ID = - 2 A
0.062
0.078
VGS = - 2.5 V, ID = - 1 A
0.090
0.120
VDS = - 15 V, ID = - 3 A
10

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
575
VDS = - 15 V, VGS = 0 V, f = 1 MHz
pF
60
51
VDS = - 15 V, VGS = - 10 V, ID = - 4.3 A
VDS = - 15 V, VGS = - 4.5 V, ID = - 4.3 A
14
21
6.6
10
1.2
nC
1.9
f = 1 MHz
td(on)
VDD = - 15 V, RL = 4.4 
ID  - 3.4 A, VGEN = - 4.5 V, Rg = 1 
tr
td(off)
1.1
5.5
11
15
30
18
35
22
40
tf
10
20
td(on)
5
10
VDD = - 15 V, RL = 4.4 
ID  - 3.4 A, VGEN = - 10 V, Rg = 1 
tr
td(off)
tf
10
20
22
40
10
20

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
- 4.5
- 15
IS = - 3.4 A, VGS = 0 V
- 0.89
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
20
40
ns
Body Diode Reverse Recovery Charge
Qrr
10
20
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 3.4 A, dI/dt = 100 A/µs, TJ = 25 °C
9
11
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63398
S11-1654-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA929DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
15
VGS = 10 V thru 3 V
TC = 25 °C
4
ID - Drain Current (A)
ID - Drain Current (A)
12
9
VGS = 2 V
6
TC = 125 °C
3
TC = - 55 °C
2
1
3
VGS = 1 V
0 0
0
0.5
1
2
1.5
2.5
VDS - Drain-to-Source Voltage (V)
3
0
0.5
0.20
1000
0.16
800
0.12
VGS = 2.5 V
VGS = 4.5 V
VGS = 10 V
0.04
1.5
2
Transfer Characteristics
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Output Characteristics
0.08
1
VGS - Gate-to-Source Voltage (V)
Ciss
600
400
200
Coss
Crss
0
0
0
3
6
9
ID - Drain Current (A)
12
0
15
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
10
ID = 3 A
ID = 4.3 A
VDS = 7.5 V
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
30
6
VDS = 15 V
VDS = 24 V
4
2
0
0
3
6
9
12
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63398
S11-1654-Rev. A, 15-Aug-11
15
1.6
1.4
VGS = 10 V, 4.5 V, 2.5 V
1.2
1.0
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA929DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.20
100
ID = 3 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.16
TJ = 150 °C
10
TJ = 25 °C
1
0.12
TJ = 125 °C
0.08
TJ = 25 °C
0.04
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
Soure-Drain Diode Forward Voltage
2
4
6
8
VGS - Gate-to-Source Voltage (V)
10
On-Resistance vs. Gate-to-Source Voltage
20
0.85
0.80
15
Power (W)
VGS(th) (V)
0.75
0.70
0.65
ID = 250 μA
10
0.60
5
0.55
0.50
- 50
- 25
0
25
50
75
100
TJ - Temperature (°C)
125
0
0.001
150
0.01
0.1
10
1
100
1000
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 us
1
1 ms
10 ms
0.1
TA = 25 °C
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
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Document Number: 63398
S11-1654-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA929DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
10
6
Power Dissipation (W)
ID - Drain Current (A)
8
6
Package Limited
4
4
2
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63398
S11-1654-Rev. A, 15-Aug-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA929DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
Single Pulse
1. Duty Cycle, D =
3. TJM - TA = PDMZthJA (t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63398.
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Document Number: 63398
S11-1654-Rev. A, 15-Aug-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
APPLICATION NOTE
Dimensions in mm (inches)
Return to Index
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Document Number: 70487
Revision: 18-Oct-13
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000