Si8851EDB Datasheet

Si8851EDB
www.vishay.com
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-20
RDS(on) () Max.
ID (A) a, d
0.0080 at VGS = -4.5 V
-16.7
0.0086 at VGS = -3.7 V
-16.1
0.0110 at VGS = -2.5 V
-14.2
0.0185 at VGS = -1.8 V
-11
• TrenchFET® power MOSFET
Qg (Typ.)
• Small 2.4 mm x 2 mm outline area
• Low 0.4 mm max. profile
70 nC
• Typical ESD protection 6000 V HBM
• Material categorization: for definitions
of compliance please see www.vishay.com/doc?99912
Power MICRO FOOT® 2.4 x 2
5
APPLICATIONS
4
0.4 mm
2m
m
1
885 x
xx
A1
2.4
mm
G
D
S
Backside View
F
E
3
C
D
2
B
S
• Battery switch / load switch
1
• Power management
A
• For smart phones, tablet PCs, and
mobile computing
G
D
Bump Side View
Ordering Information: 
P-Channel MOSFET
Si8851EDB-T2-E1 (Lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
VGS
±8
TA = 70 °C
TA = 25 °C
-13.4 a
ID
-7.7 b
-6.2 b
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
IDM
TC = 25 °C
TA = 25 °C
TA = 70 °C
TA = 25 °C
-2.6 a
IS
-0.55 b
3.1 a
2a
PD
Package Reflow Conditions c
W
0.66 b
0.43 b
TA = 70 °C
Operating Junction and Storage Temperature Range
A
-80
TA = 25 °C
Maximum Power Dissipation
V
-16.7 a
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)
UNIT
TJ, Tstg
-55 to +150
VPR
260
IR/Convection
260
°C
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
d. Based on TA = 25 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient a, b
t=5s
Maximum Junction-to-Ambient c, d
t=5s
RthJA
Typical
Maximum
30
40
145
188
Unit
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 85 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 330 °C/W.
S15-1120-Rev. B, 18-May-15
Document Number: 64197
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8851EDB
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = -250 μA
-20
-
-
V
-
-11
-
-
3
-
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
ID(on)
Drain-Source On-State Resistance a
Forward
Transconductance a
RDS(on)
gfs
ID = -250 μA
VDS = VGS, ID = -250 μA
-0.45
-
-1
VDS = 0 V, VGS = ± 4.5 V
-
-
± 0.5
VDS = 0 V, VGS = ± 8 V
-
-
± 10
VDS = -20 V, VGS = 0 V
-
-
-1
VDS = -20 V, VGS = 0 V, TJ = 70 °C
-
-
-10
VDS  -5 V, VGS = -4.5 V
-5
-
-
VGS = -4.5 V, ID = -7 A
-
0.0060
0.0080
VGS = -3.7 V, ID = -7 A
-
0.0065
0.0086
VGS = -2.5 V, ID = -5 A
-
0.0081
0.0110
VGS = -1.8 V, ID = -3 A
-
0.0130
0.0185
VDS = -10 V, ID = -7 A
-
50
-
-
6900
-
-
640
-
-
715
-
-
120
180
-
70
105
-
8
-
-
14
-
-
2.3
-
-
35
70
mV/°C
V
μA
A

S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
VDS = -10 V, VGS = 0 V, f = 1 MHz
VDS = -10 V, VGS = -8 V, ID = -5 A
VDS = -10 V, VGS = -4.5 V, ID = -5 A
VGS = -0.1 V, f = 1 MHz
td(on)
tr
VDD = -10 V, RL = 2 
ID  -5 A, VGEN = -4.5 V, Rg = 1 
-
40
80
-
115
230
tf
-
35
70
td(on)
-
15
30
td(off)
tr
td(off)
VDD = -10 V, RL = 2 
ID  -5 A, VGEN = -8 V, Rg = 1 
-
10
20
-
110
220
-
25
50
-
-
-2.6
-
-
-80
IS = -5 A, VGS = 0 V
-
-0.8
-1.2
IF = -5 A, dI/dt = 100 A/μs,
TJ = 25 °C
tf
pF
nC

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current (t = 100 μs)
ISM
Body Diode Voltage
VSD
TA = 25 °C
A
V
Body Diode Reverse Recovery Time
trr
-
40
80
ns
Body Diode Reverse Recovery Charge
Qrr
-
30
60
nC
Reverse Recovery Fall Time
ta
-
16
-
Reverse Recovery Rise Time
tb
-
24
-
ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1120-Rev. B, 18-May-15
Document Number: 64197
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8851EDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.00
10-1
10-2
1.20
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
1.60
TJ = 25 °C
0.80
10-3
10-4
TJ = 150 °C
10-5
TJ = 25 °C
10-6
0.40
10-7
0.00
10-8
0
2
4
6
8
10
12
14
0
2
4
VGS - Gate-Source Voltage (V)
6
8
10
12
14
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
20
80
VGS = 5 V thru 2.5 V
ID - Drain Current (A)
ID - Drain Current (A)
16
VGS = 2 V
60
40
20
12
8
TC = 25 °C
4
TC = 125 °C
VGS = 1.5 V
0
0.0
TC = - 55 °C
0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
2.5
0.0
3.0
0.3
Output Characteristics
0.9
1.2
1.5
Transfer Characteristics
0.060
10000
VGS = 1.8 V
0.050
8000
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
0.6
VGS - Gate-to-Source Voltage (V)
0.040
0.030
0.020
VGS = 3.7 V
VGS = 2.5 V
Ciss
6000
4000
2000
0.010
Coss
Crss
VGS = 4.5 V
0.000
0
0
20
40
60
80
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
S15-1120-Rev. B, 18-May-15
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 64197
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8851EDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.4
ID = 5 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
8
VDS = 5 V
6
VDS = 10 V
4
VDS = 16 V
2
0
VGS = 4.5, 3.7 V, ID = 7 A
1.3
VGS = 2.5 V, ID = 5 A
1.2
1.1
VGS = 1.8 V, ID = 5 A
1.0
0.9
0.8
0.7
0
20
40
60
80
100
120
- 50
- 25
0
Gate Charge
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.030
100
TJ = 150 °C
0.025
10
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
TJ = 25 °C
1
ID = 7 A
0.020
0.015
TJ = 125 °C
0.010
TJ = 25 °C
0.005
0.000
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
30
0.8
25
0.7
Power (W)
VGS(th) (V)
20
0.6
ID = 250 μA
0.5
15
0.4
10
0.3
5
0.2
- 50
- 25
0
25
50
75
TJ - Temperature (°C)
Threshold Voltage
S15-1120-Rev. B, 18-May-15
100
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
Document Number: 64197
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8851EDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
Limited by RDS(on)*
IDM Limited
100
ID - Drain Current (A)
ID Limited
100 us
10
1 ms
10 ms
1
100 ms
1s
10 s
DC
0.1
TA = 25 °C
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambienta
4.00
20
3.50
3.00
2.50
Power (W)
ID - Drain Current (A)
15
10
2.00
1.50
1.00
5
0.50
0.00
0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Current Derating
a
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Deratinga
Note
a. When mounted on 1" x 1" FR4 with full copper and t = 5 s
S15-1120-Rev. B, 18-May-15
Document Number: 64197
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si8851EDB
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 330 °C/W
0.05
3. T JM - T A = PDMZthJA(t)
0.02
0.01
0.0001
Single Pulse
0.001
0.01
4. Surface Mounted
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 Board with minimum Copper)
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 65 °C/W
0.02
3. T JM - T A = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 Board with maximum Copper)













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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64197.
S15-1120-Rev. B, 18-May-15
Document Number: 64197
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
MICRO FOOT®: 30-Bumps
(2.4 mm x 2 mm, 0.4 mm Pitch, 0.184 mm Bump Height)
30x Ø 0.205 to 0.225
Solder mask~Ø 0.215
30x Ø b1
Index-bump (Note 6)
4
2
G
G
S
S
S
S
S
D
D
D
D
D
S
S
S
S
S
D
D
D
D
D
S
S
S
S
S
e
e
e
A
e
D
e
B
e
C
E
e
0.40
D
E
e
e
D
e
XXXX
F
s
XXX
D
e
e
1
e
3
e
5
0.40
s
Top side (die back)
e
e
e
e
D
Recommended land pattern
Bump side view
K
A1
Bump (Note 1)
A2
A
b
b1
Notes
1. Bumps are 95.5/3.8/0.7 Sn/Ag/Cu.
2. Backside surface is coated with a Ti/Ni/Ag layer.
3. Non-solder mask defined copper landing pad.
4. Laser marks on the silicon die back.
5. “b1” is the diameter of the solderable substrate surface, defined by an opening in the solder resist layer solder mask defined.
6. • is the location of pin 1
DIM.
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
0.328
0.365
0.402
0.0129
0.0144
0.0158
A1
0.136
0.160
0.184
0.0054
0.0063
0.0072
A2
0.192
0.205
0.218
0.0076
0.0081
0.0086
b
0.200
0.220
0.240
0.0079
0.0087
0.0094
b1
0.175
e
0.0069
0.400
0.0157
s
0.160
0.180
0.200
0.0063
0.0071
D
1.920
1.960
2.000
0.0756
0.0772
0.0079
0.0787
E
2.320
2.360
2.400
0.0913
0.0929
0.0945
K
0.040
0.070
0.100
0.0016
0.0028
0.0039
Note
• Use millimeters as the primary measurement.
ECN: T15-0177-Rev. A, 27-Apr-15
DWG: 6040
Revision: 27-Apr-15
1
Document Number: 69366
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
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Revision: 02-Oct-12
1
Document Number: 91000