SiA921EDJ Datasheet

SiA921EDJ
Vishay Siliconix
Dual P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) ()
ID (A)
0.059 at VGS = - 4.5 V
- 4.5a
0.098 at VGS = - 2.5 V
- 4.5a
Qg (Typ.)
4.9 nC
PowerPAK SC-70-6 Dual
1
S1
2
G1
3
D2
D1
D1
6
• Load Switch, PA Switch and Battery Switch for Portable
Devices
• DC/DC Converters
G2
4
2.05 mm
S2
see
APPLICATIONS
D2
5
2.05 mm
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK® SC-70
Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Protection: 1700 V
• High Speed Switching
• Material categorization:
For
definitions
of
compliance
please
www.vishay.com/doc?99912
S1
S2
Ordering Information:
SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
SiA921EDJ-T4-GE3 (Lead (Pb)-free and Halogen-free)
G1
Marking Code
G2
DFX
Part # code
XXX
P-Channel MOSFET
Lot Traceability
and Date code
P-Channel MOSFET
D1
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Limit
- 20
± 12
Continuous Source-Drain Diode Current
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
TJ, Tstg
Operating Junction and Storage Temperature Range
- 4.5a
- 1.6b, c
7.8
5
IS
PD
Soldering Recommendations (Peak Temperature)d, e
V
- 4.5a
- 4.5a
- 4.5a, b, c
- 3.7b, c
- 15
IDM
Pulsed Drain Current
Unit
1.9b, c
1.2b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
b, f
t5s
Steady State
Symbol
RthJA
RthJC
Typical
52
12.5
Maximum
65
16
Unit
Maximum Junction-to-Ambient
°C/W
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
For technical questions, contact:: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA921EDJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
IGSS
Gate-Source Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain
ID = - 250 µA
VDS = VGS, ID = - 250 µA
Currenta
Drain-Source On-State Resistancea
RDS(on)
Forward Transconductancea
gfs
mV/°C
2.5
- 0.5
- 1.4
VDS = 0 V, VGS = ± 4.5 V
±1
VDS = 0 V, VGS = ± 12 V
± 10
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS - 5 V, VGS = - 4.5 V
ID(on)
V
- 14
- 15
V
µA
A
VGS = - 4.5 V, ID = - 3.6 A
0.048
0.059
VGS = - 2.5 V, ID = - 1.5 A
0.080
0.098
VDS = - 10 V, ID = - 3.6 A
11

S
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
VDS = - 10 V, VGS = - 10 V, ID = - 4.7 A
Turn-On Delay Time
1.3
f = 1 MHz
6.3
20
VDD = - 10 V, RL = 2.7 
ID  - 3.7 A, VGEN = - 4.5 V, Rg = 1 
td(off)
Fall Time
Turn-On Delay Time
30
20
30
25
40
tf
10
15
5
10
12
20
25
40
10
15
VDD = - 10 V, RL = 2.7 
ID  - 3.7 A, VGEN = - 10 V, Rg = 1 
td(off)
Turn-Off Delay Time
tf
Fall Time
nC

td(on)
tr
Rise Time
11
2.1
tr
Turn-Off Delay Time
23
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A
td(on)
Rise Time
15
7.1
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
- 4.5
- 15
IS = - 3.7 A, VGS = 0 V
A
- 0.9
- 1.2
Body Diode Reverse Recovery Time
trr
15
30
ns
Body Diode Reverse Recovery Charge
Qrr
6
12
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 3.7 A, dI/dt = 100 A/µs, TJ = 25 °C
8.5
6.5
V
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
For technical questions, contact:: [email protected]
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
0.5
10-3
IGSS at 150 °C
10-4
IG - Gate Current (A)
IG - Gate Current (mA)
0.4
0.3
IGSS at 25 °C (mA)
0.2
10-5
10-6
IGSS at 25 °C
10-7
10-8
0.1
10-9
0.0
10-10
0
3
6
9
12
15
18
0
3
6
9
12
15
18
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
Gate Current vs. Gate-to-Source Voltage
5
15
VGS = 10 V thru 3 V
VGS = 2.5 V
4
I D - Drain Current (A)
I D - Drain Current (A)
12
9
VGS = 2 V
6
3
2
TC = 25 °C
1
3
TC = 125 °C
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
1.5
2.0
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1000
0.20
800
0.15
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.0
VGS = 2.5 V
0.10
VGS = 4.5 V
0.05
Ciss
600
400
200
Coss
Crss
0
0.00
0
3
6
9
12
15
0
4
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
For technical questions, contact:: [email protected]
20
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
1.5
ID = 3.6 A
1.4
VGS = 4.5 V
8
6
VDS = 10 V
VDS = 16 V
4
1.3
(Normalized)
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 4.6 A
1.2
VGS = 2.5 V
1.1
1.0
0.9
2
0.8
0
0
3
6
9
12
0.7
- 50
15
- 25
0
Qg - Total Gate Charge (nC)
75
100
125
150
0.20
R DS(on) - On-Resistance (Ω)
100
I S - Source Current (A)
50
On-Resistance vs. Junction Temperature
Gate Charge
10
TJ = 150 °C
TJ = 25 °C
1
0.0
25
TJ - Junction Temperature (°C)
0.15
ID = 3.6 A; TJ = 25 °C
ID = 3.6 A; TJ = 125 °C
0.10
ID = 1 A; TJ = 125 °C
ID = 1 A; TJ = 25 °C
0.05
0.00
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
1.0
0.9
15
Power (W)
VGS(th) (V)
0.8
0.7
ID = 250 µA
10
0.6
5
0.5
0.4
- 50
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4
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
For technical questions, contact:: [email protected]
1000
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1
1 ms
10 ms
TA = 25 °C
Single Pulse
100 ms
1 s, 10 s
DC
0.1
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
8
12
Power Dissipation (W)
I D - Drain Current (A)
10
8
6
Package Limited
4
6
4
2
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
For technical questions, contact:: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 85 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64734.
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6
For technical questions, contact:: [email protected]
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual
2.500 (0.098)
0.300 (0.012)
0.350 (0.014)
0.325 (0.013)
0.275 (0.011)
0.613 (0.024)
2.500 (0.098)
0.950 (0.037)
0.475 (0.019)
0.160 (0.006)
0.275 (0.011)
1
0.650 (0.026)
1.600 (0.063)
APPLICATION NOTE
Dimensions in mm (inches)
Return to Index
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Document Number: 70487
Revision: 18-Oct-13
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000