SiB417AEDK Datasheet

SiB417AEDK
Vishay Siliconix
P-Channel 1.2 V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
-8
RDS(on) () Max.
ID (A)
0.032 at VGS = - 4.5 V
- 9a
0.045 at VGS = - 2.5 V
- 9a
0.063 at VGS = - 1.8 V
0.120 at VGS = - 1.5 V
- 9a
- 8.8
0.230 at VGS = - 1.2 V
- 6.4
g
Qg (Typ.)
11.3 nC
PowerPAK SC-75-6L-Single
APPLICATIONS
1
D
2
Smart Phones, and Tablet PCs
- Low Voltage Drop
- Space Savings
3
G
D
5
S
D
1.60 mm
S
S
• Load Switch for Portable Devices,
D
6
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Typical ESD Protection 2500 V
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Marking Code
1.60 mm
G
4
BNX
Part # code
Ordering Information:
SiB417AEDK-T1-GE3 (Lead (Pb)-free and Halogen-free)
XXX
Lot Traceability
and Date code
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Unit
V
a
ID
IDM
Pulsed Drain Current (t = 300 µs)
Limit
-8
±5
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)d, e
-9
- 9a
- 7.2b, c
- 5.7b, c
- 15
- 9a
- 2b, c
13
8.4
2.4b, c
1.6b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
RthJA
t5s
41
51
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
7.5
9.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 105 °C/W.
g. Based on TC = 25 °C.
Document Number: 63899
S12-2333-Rev. A, 01-Oct-12
For technical questions, contact: [email protected]
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB417AEDK
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
-8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
ID = - 250 µA
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
IGSS
VDS = 0 V, VGS = ± 5 V
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistance
a
a
gfs
Forward Transconductance
mV/°C
2.1
- 0.35
-1
V
± 20
VDS = - 8 V, VGS = 0 V
-1
VDS = - 8 V, VGS = 0 V, TJ = 55 °C
- 10
VDS - 5 V, VGS = - 4.5 V
RDS(on)
V
- 6.1
- 15
µA
A
VGS = - 4.5 V, ID = - 3 A
0.0265
0.0320
VGS = - 2.5 V, ID = - 3 A
0.0360
0.0450
VGS = - 1.8 V, ID = - 1 A
0.0500
0.0630
VGS = - 1.5 V, ID = - 0.5 A
0.0600
0.1200
VGS = - 1.2 V, ID = - 0.5 A
0.1000
0.2300
VDS = - 4 V, ID = - 7.4 A
18

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
878
VDS = - 4 V, VGS = 0 V, f = 1 MHz
415
VDS = - 4 V, VGS = - 5 V, ID = - 7.4 A
12.3
18.5
11.3
17
735
VDS = - 4 V, VGS = - 4.5 V, ID = - 7.4 A
VDD = - 4 V, RL = 0.68 
ID  - 5.9 A, VGEN = - 4.5 V, Rg = 1 
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
1.35
nC
3.42
f = 1 MHz
td(on)
Turn-On Delay Time
pF
1.3
6.5
13
19
29
18
27
32
48
19
29

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
-9
- 15
IS = - 5.9 A, VGS = 0 V
IF = - 5.9 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
32
48
ns
13
20
nC
14
18
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: [email protected]
Document Number: 63899
S12-2333-Rev. A, 01-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB417AEDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-2
0.015
TJ = 25 °C
10-3
10-4
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.012
0.009
0.006
TJ = 150 °C
10-5
10-6
TJ = 25 °C
10-7
0.003
10-8
10-9
0.000
0
2
4
5
7
9
0
3
6
9
12
VGS - Gate-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Gate Source Voltage vs. Gate Current
Gate Source Voltage vs. Gate Current
15
1
VGS = 5V thru 2V
0.8
ID - Drain Current (A)
ID - Drain Current (A)
12
9
VGS = 1.5 V
6
3
0.6
0.4
TC = 25 °C
0.2
TC = 125 °C
VGS = 1 V
TC = - 55 °C
0
0
0
0.5
1
1.5
2
0
0.25
0.5
0.75
1
1.25
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.2
1500
VGS = 1.2 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
1200
0.15
VGS = 1.5 V
0.1
VGS = 1.8 V
VGS = 2.5 V
0.05
Ciss
900
600
Coss
Crss
300
VGS = 4.5 V
0
0
0
3
6
9
12
15
ID - Drain Current (A)
0
2
On-Resistance vs. Drain Current and Gate Voltage
Document Number: 63899
S12-2333-Rev. A, 01-Oct-12
4
6
8
VDS - Drain-to-Source Voltage (V)
For technical questions, contact: [email protected]
Capacitance
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB417AEDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
5
1.4
ID = 3 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 7.4 A
4
VDS = 4 V
3
VDS = 2 V
2
VDS = 6.4 V
1
0
VGS = 4.5 V
1.27
VGS = 2.5 V
1.14
1.01
0.88
0.75
0
3.5
7
10.5
14
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
0.120
100
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 3 A
10
TJ = 150 °C
1
TJ = 25 °C
0.1
0.090
0.060
TJ = 125 °C
TJ = 25 °C
0.030
0.000
0.0
0.3
0.6
0.9
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
20
0.7
ID = 250 μA
0.6
Power (W)
VGS(th) (V)
15
0.5
0.4
10
5
0.3
0.2
- 50
- 25
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4
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
For technical questions, contact: [email protected]
Document Number: 63899
S12-2333-Rev. A, 01-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB417AEDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
20
Limited by RDS(on)*
100 μs
1 ms
10 ms
100 ms
10 s, 1 s
DC
1
0.1
15
ID - Drain Current (A)
ID - Drain Current (A)
10
10
5
0.01
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
1
0
10
0
25
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
50
75
100
125
150
125
150
TC - Case Temperature (°C)
Current Derating**
Safe Operating Area, Junction-to-Case
1.5
16
1.2
0.9
Power (W)
Power (W)
12
0.6
8
4
0.3
0.0
0
0
25
50
75
100
125
TA - Ambient Temperature (°C)
Power Junction-to-Ambient
150
0
25
50
75
100
TC - Case Temperature (°C)
Power Junction-to-Case
** The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63899
S12-2333-Rev. A, 01-Oct-12
For technical questions, contact: [email protected]
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiB417AEDK
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = R thJA = 105 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63899.
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For technical questions, contact: [email protected]
Document Number: 63899
S12-2333-Rev. A, 01-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
b
e
PIN3
PIN2
PIN1
PIN3
PIN6
K3
PIN5
E1
E1
K
K
D1
D1
D1
E3
E1
D2
K
E2 K4
L
PIN2
L
PowerPAK® SC75-6L
PIN6
K2
PIN4
K1
K2
BACKSIDE VIEW OF SINGLE
PIN5
K1
PIN4
K2
BACKSIDE VIEW OF DUAL
D
A
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
C
A1
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.18
0.25
0.33
0.007
0.010
0.013
0.18
0.25
0.33
0.007
0.010
0.013
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
D1
0.57
0.67
0.77
0.022
0.026
0.030
0.34
0.44
0.54
0.013
0.017
0.021
D2
0.10
0.20
0.30
0.004
0.008
0.012
E
1.53
1.60
1.70
0.060
0.063
0.067
1.53
1.60
1.70
0.060
0.063
0.067
E1
1.00
1.10
1.20
0.039
0.043
0.047
0.51
0.61
0.71
0.020
0.024
0.028
E2
0.20
0.25
0.30
0.008
0.010
0.012
E3
0.32
0.37
0.42
0.013
0.015
0.017
e
0.50 BSC
0.020 BSC
0.50 BSC
0.020 BSC
K
0.180 TYP
0.007 TYP
0.245 TYP
0.010 TYP
K1
0.275 TYP
0.011 TYP
0.320 TYP
0.013 TYP
K2
0.200 TYP
0.008 TYP
0.200 BSC
0.008 TYP
K3
0.255 TYP
0.010 TYP
K4
0.300 TYP
L
0.15
0.25
0.012 TYP
0.35
T
0.006
0.010
0.014
0.15
0.25
0.35
0.006
0.010
0.014
0.03
0.08
0.13
0.001
0.003
0.005
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5935
Document Number: 73000
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Single
1.250 (0.049)
0.250 (0.01)
0.500 (0.02)
0.250 (0.01)
0.400 (0.016)
0.300 (0.012)
0.180 (0.007)
0.370 (0.015)
1.700 (0.067)
1.100
0.620 (0.024)
(0.043)
2.000 (0.079)
0.200 (0.008)
0.300 (0.012)
0.300 (0.012)
1
0.545 (0.021)
0.250 (0.01)
0.670 (0.026)
2.000 (0.079)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70488
Revision: 21-Jan-08
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13
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Disclaimer
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
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all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000