CF P1 5 PMEG100V100ELPD 100 V, 10 A low leakage current Schottky barrier rectifier 3 February 2016 Product data sheet 1. General description Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • • • Average forward current: IF(AV) ≤ 10 A Reverse voltage: VR ≤ 100 V Low leakage current due to high Schottky barrier technology Low forward voltage High power capability due to clip-bonding technology and heat sink High temperature Tj ≤ 175 °C Small and thin SMD power plastic package, typical height 0.78 mm AEC-Q101 qualified 3. Applications • • • • • • Low voltage rectification Automotive LED lighting High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 150 °C; - - 10 A VR reverse voltage Tj = 25 °C - - 100 V VF forward voltage IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; - 770 850 mV - 0.2 1 µA square wave Tj = 25 °C IR reverse current VR = 100 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C Scan or click this QR code to view the latest information for this product PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 A anode 3 K cathode Simplified outline Graphic symbol A A K 1 3 aaa-009063 2 CFP15 (SOT1289) 6. Ordering information Table 3. Ordering information Type number PMEG100V100ELPD Package Name Description Version CFP15 plastic, thermal enhanced ultra thin SMD package; 3 leads; body: 5.8 x 4.3 x 0.78 mm SOT1289 7. Marking Table 4. Marking codes Type number Marking code PMEG100V100ELPD 100V L10E PMEG100V100ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 100 V IF forward current Tsp ≤ 145 °C; δ = 1 - 14 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 150 °C; - 10 A - 170 A [1] - 1.66 W [2] - 2.15 W [3] - 3.75 W square wave IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] [3] [4] [5] PMEG100V100ELPD Product data sheet Min Typ Max Unit [1][2] - - 90 K/W [1][3] - - 70 K/W [1][4] - - 40 K/W [5] - - 3 K/W For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier 102 Zth(j-a) (K/W) aaa-020695 duty cycle = 1 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0.02 0.01 1 0 10-1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 102 Zth(j-a) (K/W) 10 aaa-020696 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 1 0 10-1 10-3 10-2 10-1 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG100V100ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier aaa-020697 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 Zth(j-a) (K/W) 10 0.1 0.05 0.02 0.01 1 0 10-1 10-3 10-2 10-1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 1 mA; tp ≤ 1.2 ms; δ ≤ 0.12; 100 - - V forward voltage IF = 0.1 A; tp ≤ 300 µs; δ ≤ 0.02 ; - 440 - mV - 545 650 mV - 610 710 mV - 685 - mV - 700 790 mV - 720 - mV - 745 - mV - 770 850 mV - 870 960 mV VF Tj = 25 °C; pulsed Tj = 25 °C IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 4 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 6 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 8 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = -40 °C PMEG100V100ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier Symbol Parameter Conditions Min Typ Max Unit IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02; - 570 - mV - 635 730 mV - 0.06 - µA - 0.09 - µA - 0.2 1 µA - 0.38 2.5 mA - 0.92 3.5 mA VR = 1 V; f = 1 MHz; Tj = 25 °C - 365 - pF VR = 4 V; f = 1 MHz; Tj = 25 °C - 215 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 135 - pF IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; - 14 - ns - 555 - mV Tj = 125 °C IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02; Tj = 125 °C IR reverse current VR = 60 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C VR = 80 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C VR = 100 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 25 °C VR = 100 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 125 °C VR = 60 V; tp ≤ 3 ms; δ ≤ 0.03; Tj = 150 °C Cd trr diode capacitance reverse recovery time Tj = 25 °C VFRM peak forward recovery voltage PMEG100V100ELPD Product data sheet IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier aaa-020632 102 IF (A) 10 IR (A) (1) (2) (3) (4) (5) 1 10-3 (2) 10-4 (3) 10-5 (5) (4) 10-7 (6) 10-2 (6) 10-8 10-9 (7) 10-3 Fig. 4. (1) 10-6 10-1 10-4 aaa-020631 10-2 (7) 10-10 0 0.4 0.8 VF (V) 10-11 1.2 0 20 40 pulsed condition (1) Tj = 175 °C pulsed condition (1) Tj = 175 °C (2) Tj = 150 °C (2) Tj = 150 °C (3) Tj = 125 °C (3) Tj = 125 °C (4) Tj = 100 °C (4) Tj = 100 °C (5) Tj = 85°C (5) Tj = 85 °C (6) Tj = 25 °C (6) Tj = 25 °C (7) Tj = −40 °C (7) Tj = −40 °C Forward current as a function of forward voltage; typical values Fig. 5. aaa-020630 600 60 80 100 Reverse current as a function of reverse voltage; typical values aaa-020698 10 (4) PF(AV) (W) Cd (pF) VR (V) 8 (5) (3) 400 6 (2) (1) 4 200 2 0 Fig. 6. 0 20 40 60 80 VR (V) 0 100 0 f = 1 MHz; Tamb = 25 °C Tj = 100 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 0.8 (5) δ = 1 Fig. 7. PMEG100V100ELPD Product data sheet 10 IF(AV) (A) 15 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 3 February 2016 5 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier aaa-020699 0.008 aaa-020700 0.5 PR(AV) (W) PR(AV) (W) 0.4 0.006 (1) (1) (2) 0.3 (3) 0.004 (2) 0.2 (4) (3) 0.002 0.1 (4) (5) 0 Fig. 8. 0 20 40 60 80 VR (V) 0.0 100 0 20 40 Tj = 100 °C Tj = 175 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 (5) δ = 0.2 (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Average reverse power dissipation as a function of reverse voltage; typical values Fig. 9. aaa-020701 6 60 80 VR (V) 100 Average reverse power dissipation as a function of reverse voltage; typical values aaa-020702 8 IF(AV) (A) IF(AV) (A) (1) 4 6 (1) (2) (2) (3) (3) 4 (4) (4) 2 2 0 0 50 100 0 150 200 Tamb (°C) FR4 PCB, standard footprint Tj = 175 °C 100 150 200 Tamb (°C) 2 (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values Product data sheet 50 FR4 PCB, mounting pad for cathode 1 cm Tj = 175 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz PMEG100V100ELPD 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier aaa-020703 12 IF(AV) (A) aaa-020704 16 (1) IF(AV) (A) (1) 12 (2) 8 (2) (3) 8 (3) (4) 4 4 0 0 50 100 0 150 200 Tamb (°C) (4) 0 50 100 Ceramic PCB, Al2O3, standard footprint Tj = 175 °C Tj = 175 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz 150 Tsp (°C) 200 Fig. 13. Average forward current as a function of solder point temperature; typical values Fig. 12. Average forward current as a function of ambient temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 14. Reverse recovery definition PMEG100V100ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier IF time VF VFRM VF time 001aab912 Fig. 15. Forward recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 16. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG100V100ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier 12. Package outline 4.4 4.2 2.13 1.3 1.1 0.45 0.25 2 4.8 4.4 0.82 0.74 1.3 0.9 1 5.9 5.7 4.2 3.8 0.45 0.25 3 2.15 1.95 0.24 0.16 3.5 3.1 Dimensions in mm 6.6 6.4 14-10-13 Fig. 17. Package outline CFP15 (SOT1289) 13. Soldering Footprint information for reflow soldering of CFP15 package SOT1289 4.6 3.73 1.4 (2×) 1.8 (2×) 1.6 (2×) 2.13 1.64 1.44 1.34 0.6 0.4 0.11 1.9 7.5 1.02 5.16 4.96 0.2 1.9 occupied area solder resist solder lands solder paste Issue date 13-08-28 14-03-12 0.2 0.05 0.6 1.7 (4×) 0.2 2.4 3.8 4 Dimensions in mm sot1289_fr Fig. 18. Reflow soldering footprint for CFP15 (SOT1289) PMEG100V100ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG100V100ELPD v.2 20160203 Product data sheet - PMEG100V100ELPD v.1 Modifications: • PMEG100V100ELPD v.1 20151117 PMEG100V100ELPD Product data sheet Added Figure 1 to Figure 3 and Figure 7 to Figure 13. Preliminary data sheet - All information provided in this document is subject to legal disclaimers. 3 February 2016 - © NXP Semiconductors N.V. 2016. All rights reserved 12 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 13 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG100V100ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 14 / 15 PMEG100V100ELPD NXP Semiconductors 100 V, 10 A low leakage current Schottky barrier rectifier 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 5 11 11.1 Test information ..................................................... 9 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 11 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 February 2016 PMEG100V100ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 3 February 2016 © NXP Semiconductors N.V. 2016. All rights reserved 15 / 15