CF P1 5 PMEG100V060ELPD 100 V, 6 A low leakage current Schottky barrier rectifier 20 May 2016 Product data sheet 1. General description Maximum Efficiency General Application (MEGA) Schottky barrier rectifier, encapsulated in a CFP15 (SOT1289) power and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • • • Average forward current: IF(AV) ≤ 6 A Reverse voltage: VR ≤ 100 V Low leakage current due to high Schottky barrier technology Low forward voltage High power capability due to clip-bonding technology and heat sink High temperature Tj ≤ 175 °C Small and thin SMD power plastic package, typical height 0.78 mm AEC-Q101 qualified 3. Applications • • • • • • Low voltage rectification Automotive LED lighting High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 155 °C; square wave - - 6 A VR reverse voltage Tj = 25 °C - - 100 V VF forward voltage IF = 6 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C - 770 840 mV IR reverse current VR = 100 V; tp ≤ 3 ms; δ ≤ 0.03 ; Tj = 25 °C - 0.11 0.45 µA PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A anode 2 A anode 3 K cathode Simplified outline Graphic symbol K 1 3 A A aaa-009063 2 CFP15 (SOT1289) 6. Ordering information Table 3. Ordering information Type number PMEG100V060ELPD Package Name Description Version CFP15 plastic, thermal enhanced ultra thin SMD package; 3 leads; body: 5.8 x 4.3 x 0.78 mm SOT1289 7. Marking Table 4. Marking codes Type number Marking code PMEG100V060ELPD 100V L06E PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 100 V IF forward current Tsp ≤ 150 °C; δ = 1 - 8.4 A IF(AV) average forward current δ = 0.5 ; f = 20 kHz; Tamb ≤ 155 °C; square wave - 6 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 130 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 1.66 W [2] - 2.15 W [3] - 3.75 W Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] [2] [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) [1] [2] [3] [4] [5] thermal resistance from junction to solder point Min Typ Max Unit [1][2] - - 90 K/W [1][3] - - 70 K/W [1][4] - - 40 K/W [5] - - 3 K/W For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab. PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier aaa-022836 102 1 Zth(j-a) (K/W) 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0.02 0.01 1 duty cycle = 0 10-1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-022837 102 1 Zth(j-a) (K/W) 0.5 0.25 10 0.75 0.33 0.2 0.1 0.05 0.02 1 0.01 duty cycle = 0 10-1 10-3 10-2 10-1 FR4 PCB, mounting pad for cathode 1 cm 1 10 102 2 tp (s) 103 Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier aaa-022838 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.33 10 0.2 0.05 0.5 0.25 0.1 0.02 0.01 1 0 10-1 10-3 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 1 mA; tp ≤ 1.2 ms; δ ≤ 0.12 ; Tj = 25 °C; pulsed 100 - - V VF forward voltage IF = 0.1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C - 455 - mV IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C - 600 - mV IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C - 670 740 mV IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C - 710 770 mV IF = 4 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C - 740 810 mV IF = 6 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C - 770 840 mV IF = 6 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = -40 °C - 860 970 mV IF = 6 A; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 125 °C - 630 750 mV VR = 60 V; tp ≤ 3 ms; δ ≤ 0.03 ; Tj = 25 °C - 0.035 - µA VR = 80 V; tp ≤ 3 ms; δ ≤ 0.03 ; Tj = 25 °C - 0.055 - µA VR = 100 V; tp ≤ 3 ms; δ ≤ 0.03 ; Tj = 25 °C - 0.11 0.45 µA VR = 100 V; tp ≤ 3 ms; δ ≤ 0.03 ; Tj = 125 °C - 0.22 0.8 mA VR = 60 V; tp ≤ 3 ms; δ ≤ 0.03 ; Tj = 150 °C - 0.5 2 mA VR = 1 V; f = 1 MHz; Tj = 25 °C - 200 - pF VR = 4 V; f = 1 MHz; Tj = 25 °C - 120 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 80 - pF IR Cd reverse current diode capacitance trr reverse recovery time IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A; Tj = 25 °C - 8 - ns VFR forward recovery voltage IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C - 565 - mV PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier aaa-022839 102 IF (A) 10 IR (A) (1) (2) (4) (5) 10-1 (2) (3) 10-5 (4) 10-6 (5) 10-7 (6) 10-2 (6) 10-8 10-9 (7) 10-3 10-4 (1) 10-3 10-4 (3) 1 aaa-022840 10-2 (7) 10-10 0 0.4 0.8 VF (V) 10-11 1.2 pulsed condition (1) Tj = 175 °C (2) Tj = 150 °C (3) Tj = 125 °C (4) Tj = 100 °C (5) Tj = 85°C (6) Tj = 25 °C (7) Tj = −40 °C 0 20 40 60 80 VR (V) 100 pulsed condition (1) Tj = 175 °C (2) Tj = 150 °C (3) Tj = 125 °C (4) Tj = 100 °C (5) Tj = 85 °C (6) Tj = 25 °C (7) Tj = −40 °C Fig. 4. Forward current as a function of forward voltage; Fig. 5. Reverse current as a function of reverse voltage; typical values typical values aaa-022841 350 Cd (pF) 300 aaa-022842 6 (4) (5) PF(AV) (W) 250 (3) 4 200 (2) (1) 150 2 100 50 0 0 20 40 60 80 VR (V) 0 100 f = 1 MHz; Tamb = 25 °C 0 3 6 IF(AV) (A) 9 Tj = 100 °C (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 0.8 (5) δ = 1 Fig. 6. Diode capacitance as a function of reverse voltage; typical values Fig. 7. Average forward power dissipation as a function of average forward current; typical values PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier aaa-022843 0.006 aaa-022844 0.3 PR(AV) (W) PR(AV) (W) 0.004 0.2 (1) (1) (2) (3) 0.002 (2) 0.1 (4) (3) (4) (5) 0 0 20 40 60 80 VR (V) 0 100 Tj = 100 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 (5) δ = 0.2 40 60 80 VR (V) 100 Fig. 9. Average reverse power dissipation as a function of reverse voltage; typical values aaa-022845 6 aaa-022846 6 IF(AV) (A) (1) 4 20 Tj = 175 °C (1) δ = 1 (2) δ = 0.5 (3) δ = 0.2 (4) δ = 0.1 Fig. 8. Average reverse power dissipation as a function of reverse voltage; typical values IF(AV) (A) 0 (1) (2) 4 (2) (3) (3) (4) (4) 2 0 2 0 50 100 0 150 200 Tamb (°C) FR4 PCB, standard footprint Tj = 175 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Product data sheet 50 100 150 200 Tamb (°C) 2 FR4 PCB, mounting pad for cathode 1 cm Tj = 175 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of ambient temperature; typical values PMEG100V060ELPD 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier aaa-022847 10 IF(AV) (A) 0 (3) 4 (4) 2 (2) 6 (3) 4 (1) 8 (2) 6 0 IF(AV) (A) (1) 8 aaa-022848 10 (4) 2 50 100 0 150 200 Tamb (°C) Ceramic PCB, Al2O3, standard footprint Tj = 175 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz 0 50 100 150 Tsp (°C) 200 Tj = 175 °C (1) δ = 1 (DC) (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 13. Average forward current as a function of solder point temperature; typical values Fig. 12. Average forward current as a function of ambient temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 14. Reverse recovery definition PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier IF time VF VFRM VF time 001aab912 Fig. 15. Forward recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 16. Duty cycle definition The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier 12. Package outline 4.4 4.2 2.13 1.3 1.1 0.45 0.25 2 4.8 4.4 0.82 0.74 1.3 0.9 1 5.9 5.7 4.2 3.8 0.45 0.25 3 2.15 1.95 0.24 0.16 3.5 3.1 Dimensions in mm 6.6 6.4 14-10-13 Fig. 17. Package outline CFP15 (SOT1289) 13. Soldering Footprint information for reflow soldering of CFP15 package SOT1289 4.6 3.73 1.4 (2×) 1.8 (2×) 1.6 (2×) 2.13 1.64 1.44 1.34 0.6 0.4 0.11 1.9 7.5 1.02 5.16 4.96 0.2 1.9 occupied area solder resist solder lands solder paste Issue date 13-08-28 14-03-12 0.2 0.05 0.6 1.7 (4×) 0.2 2.4 3.8 4 Dimensions in mm sot1289_fr Fig. 18. Reflow soldering footprint for CFP15 (SOT1289) PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG100V060ELPD v.1 20160520 Product data sheet - - PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 15. Legal information Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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All rights reserved 13 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 14 / 15 PMEG100V060ELPD NXP Semiconductors 100 V, 6 A low leakage current Schottky barrier rectifier 16. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 3 10. Characteristics............................................................ 6 11. Test information......................................................... 9 12. Package outline........................................................ 11 13. Soldering................................................................... 11 14. Revision history........................................................12 15. Legal information..................................................... 13 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 May 2016 PMEG100V060ELPD Product data sheet All information provided in this document is subject to legal disclaimers. 20 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 15 / 15