Si1965DH Datasheet

Si1965DH
Vishay Siliconix
Dual P-Channel 12 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 12
ID (A)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
a
0.390 at VGS = - 4.5 V
- 1.3
0.535 at VGS = - 2.5 V
- 1.2
0.710 at VGS = - 1.8 V
- 1.1
1.7 nC
APPLICATIONS
• Load Switch for Portable Devices
SOT-363
SC-70 (6-LEADS)
S1
S1
1
6
D1
G1
2
5
G2
S2
D2
3
4
DE
XX
YY
Marking Code
G1
G2
Lot Traceability
and Date Code
S2
Part # Code
Top View
D1
Ordering Information: Si1965DH-T1-E3 (Lead (Pb)-free)
Si1965DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
D2
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 12
Gate-Source Voltage
VGS
±8
TC = 70 °C
- 1.2
ID
TA = 25 °C
- 1.14b, c
- 0.9b, c
TA = 70 °C
Pulsed Drain Current
IDM
-1
IS
TA = 25 °C
- 0.6b, c
TC = 25 °C
Maximum Power Dissipation
1.25
TC = 70 °C
0.8
PD
TA = 25 °C
W
0.74b, c
0.47b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
-3
TC = 25 °C
Continuous Source-Drain Diode Current
V
- 1.3a
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
°C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t≤5s
RthJA
130
170
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
80
100
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
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Si1965DH
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 12
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS , ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
- 14
mV/°C
2
- 0.4
- 1.0
V
± 100
nA
VDS = - 12 V, VGS = 0 V
-1
VDS = - 12 V, VGS = 0 V, TJ = 85 °C
- 10
VDS ≤ - 5 V, VGS = - 4.5 V
-3
µA
A
VGS = - 4.5 V, ID = - 1.0 A
0.315
0.390
VGS = - 2.5 V, ID = - 0.86 A
0.425
0.535
VGS = - 1.8 V, ID = - 0.25 A
0.550
0.710
VDS = - 6 V, ID = - 1.0 A
2.5
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Rg
120
VDS = - 6 V, VGS = 0 V, f = 1 MHz
41
VDS = - 6 V, VGS = - 8 V, ID = - 1.1 A
2.8
4.2
1.7
2.6
25
VDS = - 6 V, VGS = - 4.5 V, ID = - 1.1 A
0.3
f = 1 MHz
VDD = - 6 V, RL = 6.7 Ω
ID ≅ - 0.9 A, VGEN = - 4.5 V, Rg = 1 Ω
Ω
7.5
12
20
27
40
15
25
tf
10
15
td(on)
2
5
12
20
td(off)
tr
td(off)
nC
0.4
td(on)
tr
pF
VDD = - 6 V, RL = 6.7 Ω
ID ≅ - 0.9 A, VGEN = - 8 V, Rg = 1 Ω
tf
12
20
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 1.0
- 3.0
IS = - 0.9 A
IF = - 0.9 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.8
- 1.2
V
20
40
ns
10
20
nC
9.5
11.5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
Si1965DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
3.0
1.0
VGS = 5 V thru 2.5 V
0.8
2.0
I D - Drain Current (A)
I D - Drain Current (A)
2.5
VGS = 2 V
1.5
1.0
VGS = 1.5 V
0.6
TC = 25 °C
0.4
TC = 125 °C
0.2
0.5
VGS = 1 V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
TC = - 55 °C
0.0
0.0
3.0
0.5
VDS - Drain-to-Source Voltage (V)
2.0
Transfer Characteristics
1.0
200
0.8
160
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
VGS = 1.8 V
0.6
VGS = 2.5 V
0.4
Ciss
120
80
Coss
VGS = 4.5 V
0.2
1.0
40
Crss
0.0
0.0
0
0.5
1.0
1.5
2.0
2.5
0
3.0
3
ID - Drain Current (A)
9
12
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.5
8
1.4
ID = 1.1 A
VGS = 4.5 V; 2.5 V; ID = 1 A
VDS = 6 V
4
VDS = 9.6 V
2
1.3
(Normalized)
6
RDS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
6
1.2
1.1
VGS = 1.8 V; ID = 0.14 A
1.0
0.9
0.8
0
0.0
0.5
1.0
1.5
2.0
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
2.5
3.0
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1965DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
10
TJ = 25 °C
1
0.1
0.0
VGS(th) (V)
R DS(on) - On-Resistance (Ω)
TJ = 150 °C
0.6
TJ = 125 °C
0.4
TJ = 25 °C
0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
5
0.7
4
0.6
ID = 250 µA
0.5
3
2
0.4
0.3
- 50
1
VSD - Source-to-Drain Voltage (V)
Power (W)
I S - Source Current (A)
ID = 1 A
0.8
1
- 25
0
25
50
75
100
125
0
0.01
150
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
600
10
I D - Drain Current (A)
Limited by RDS(on)*
1
1 ms
10 ms
100 ms
0.1
1 s, 10 s
DC
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
Si1965DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
1.4
1.2
1.2
Power Dissipation (W)
I D - Drain Current (A)
1.6
Package Limited
0.8
1.0
0.8
0.6
0.4
0.4
0.2
0.0
0.0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Foot
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
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Si1965DH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 220 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68765.
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Document Number: 68765
S10-0792-Rev. B, 05-Apr-10
Package Information
Vishay Siliconix
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-B-
e
b
e1
D
-Ac
A2 A
L
A1
Document Number: 71154
06-Jul-01
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
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AN816
Vishay Siliconix
Dual-Channel LITTLE FOOTR 6-Pin SC-70 MOSFET
Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
87 (mil)
26 (mil)
The new dual 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout, and
thermal performance for the dual-channel version.
6
5
96 (mil)
71 (mil)
48 (mil)
23 (mil)
61 (mil)
1
PIN-OUT
4
2
3
0.0 (mil)
Figure 1 shows the pin-out description and Pin 1 identification
for the dual-channel SC-70 device in the 6-pin configuration.
Both n-and p-channel devices are available in this package –
the drawing example below illustrates the p-channel device.
26 (mil)
16 (mil)
FIGURE 2.
SOT-363
SC-70 (6-LEADS)
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Top View
FIGURE 1.
For package dimensions see outline drawing SC-70 (6-Leads)
(http://www.vishay.com/doc?71154)
BASIC PAD PATTERNS
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286) for the SC-70
6-pin basic pad layout and dimensions. This pad pattern is
sufficient for the low-power applications for which this package
is intended. Increasing the drain pad pattern (Figure 2) yields
a reduction in thermal resistance and is a preferred footprint.
Document Number: 71405
12-Dec-03
8 (mil)
SC-70 (6 leads) Dual
EVALUATION BOARD FOR THE DUALCHANNEL SC70-6
The 6-pin SC-70 evaluation board (EVB) shown in Figure 3
measures 0.6 in. by 0.5 in. The copper pad traces are the same
as described in the previous section, Basic Pad Patterns. The
board allows for examination from the outer pins to the 6-pin
DIP connections, permitting test sockets to be used in
evaluation testing.
The thermal performance of the dual 6-pin SC-70 has been
measured on the EVB, comparing both the copper and Alloy
42 leadframes. This test was then repeated using the 1-inch2
PCB with dual-side copper coating.
A helpful way of displaying the thermal performance of the
6-pin SC-70 dual copper leadframe is to compare it to the
traditional Alloy 42 version.
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AN816
Vishay Siliconix
Front of Board SC70-6
Back of Board SC70-6
S1
D1
G1
G2
D2
S2
vishay.com
SC70−6 DUAL
FIGURE 3.
THERMAL PERFORMANCE
Junction-to-Foot Thermal Resistance
(the Package Performance)
COOPER LEADFRAME
Room Ambient 25 _C
Thermal performance for the dual SC-70 6-pin package is
measured as junction-to-foot thermal resistance, in which the
“foot” is the drain lead of the device as it connects with the
body. The junction-to-foot thermal resistance for this device is
typically 80_C/W, with a maximum thermal resistance of
approximately 100_C/W. This data compares favorably with
another compact, dual-channel package – the dual TSOP-6 –
which features a typical thermal resistance of 75_C/W and a
maximum of 90_C/W.
PD +
Elevated Ambient 60 _C
T J(max) * T A
Rq JA
PD +
T J(max) * T A
Rq JA
o
o
P D + 150 Co* 25 C
224 CńW
o
o
P D + 150 Co* 60 C
224 CńW
P D + 558 mW
P D + 402 mW
Although they are intended for low-power applications,
devices in the 6-pin SC-70 dual-channel configuration will
handle power dissipation in excess of 0.5 W.
TESTING
Power Dissipation
The typical RθJA for the dual-channel 6-pin SC-70 with a
copper leadframe is 224_C/W steady-state, compared to
413_C/W for the Alloy 42 version. All figures are based on the
1-inch2 FR4 test board. The following example shows how the
thermal resistance impacts power dissipation for the dual 6-pin
SC-70 package at varying ambient temperatures.
To further aid the comparison of copper and Alloy 42
leadframes, Figures 4 and 5 illustrate the dual-channel 6-pin
SC-70 thermal performance on two different board sizes and
pad patterns. The measured steady-state values of RθJA for
the dual 6-pin SC-70 with varying leadframes are as follows:
LITTLE FOOT 6-PIN SC-70
1) Minimum recommended pad pattern on
the EVB board (see Figure 3).
Alloy 42 Leadframe
1-inch2
2) Industry standard
PCB with
maximum copper both sides.
ALLOY 42 LEADFRAME
Room Ambient 25 _C
PD +
T J(max) * T A
PD +
T J(max) * T A
Rq JA
o
o
P D + 150 Co* 25 C
413 CńW
o
o
P D + 150 Co* 60 C
413 CńW
P D + 303 mW
P D + 218 mW
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2
Rq JA
Elevated Ambient 60 _C
Alloy 42
Copper
518_C/W
344_C/W
413_C/W
224_C/W
The results indicate that designers can reduce thermal
resistance (θJA) by 34% simply by using the copper leadframe
device as opposed to the Alloy 42 version. In this example, a
174_C/W reduction was achieved without an increase in board
area. If an increase in board size is feasible, a further 120_C/W
reduction can be obtained by utilizing a 1-inch2. PCB area.
The Dual copper leadframe versions have the following suffix:
Dual:
Compl.:
Si19xxEDH
Si15xxEDH
Document Number: 71405
12-Dec-03
AN816
500
500
400
400
Thermal Resistance (C/W)
Thermal Resistance (C/W)
Vishay Siliconix
300
Alloy 42
200
Copper
100
300
Alloy
42
200
100
Copper
0
0
10-5
10-4
10-3
10-2
10-1
1
10
100
1000
10-5
Dual SC70-6 Thermal Performance on EVB
Document Number: 71405
12-Dec-03
10-3
10-2
10-1
1
10
100
1000
Time (Secs)
Time (Secs)
FIGURE 4.
10-4
FIGURE 5.
Dual SC70-6 Comparison on 1-inch2 PCB
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
0.026
(0.648)
0.045
(1.143)
0.096
(2.438)
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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18
Document Number: 72602
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000