SQ1539EH Datasheet

SQ1539EH
www.vishay.com
Vishay Siliconix
N-and P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
N-CHANNEL
P-CHANNEL
30
-30
RDS(on) (Ω) at VGS = ± 10 V
0.280
0.940
RDS(on) (Ω) at VGS = ± 4.5 V
0.380
1.800
ID (A)
0.85
VDS (V)
Configuration
-0.85
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
N & P Pair
Package
D1
SC-70
S2
SOT-363
SC-70 Dual (6 leads)
G2
5
D1
6
S2
4
G2
G1
1
S1
Top View
2
G1
3
D2
S1
D2
N-Channel MOSFET
P-Channel MOSFET
Marking Code: 9R
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
N-CHANNEL
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
Continuous Drain Current c
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
P-CHANNEL
-30
± 20
0.85
-0.85
0.85
-0.56
IS
0.85
-0.85
IDM
3.3
-3.3
IAS
3.5
-1.9
EAS
0.6
0.2
1.5
1.5
0.5
0.5
ID
PD
TJ, Tstg
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB Mount b
SYMBOL
N-CHANNEL
P-CHANNEL
RthJA
220
220
RthJF
100
100
UNIT
°C/W
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR4 material).
c. Package limited.
S15-1925-Rev. A, 17-Aug-15
Document Number: 62993
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1539EH
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
N-Ch
30
-
-
VGS = 0 V, ID = -250 μA
P-Ch
-30
-
-
VDS = VGS, ID = 250 μA
N-Ch
1
1.8
2.6
VDS = VGS, ID = -250 μA
VDS = 0 V, VGS = ± 20 V
P-Ch
-1
-1.8
-2.6
N-Ch
-
-
± 100
P-Ch
-
-
± 100
VGS = 0 V
VDS = 30 V
N-Ch
-
-
1
VGS = 0 V
VDS = -30 V
P-Ch
-
-
-1
VGS = 0 V
VDS = 30 V, TJ = 125 °C
N-Ch
-
-
50
VGS = 0 V
VDS = -30 V, TJ = 125 °C
P-Ch
-
-
-50
VGS = 0 V
VDS = 30 V, TJ = 175 °C
N-Ch
-
-
150
VGS = 0 V
VDS = -30 V, TJ = 175 °C
P-Ch
-
-
-150
VGS = 10 V
VDS = 5 V
N-Ch
2
-
-
VGS = -10 V
VDS = -5 V
P-Ch
-0.5
-
-
VGS = 10 V
ID = 1 A
N-Ch
-
0.210
0.280
VGS = -10 V
ID = -0.5 A
P-Ch
-
0.788
0.940
VGS = 4.5 V
ID = 0.1 A
N-Ch
-
0.290
0.380
VGS = -4.5 V
ID = -0.1 A
1.800
P-Ch
-
1.400
VDS = 15 V, ID = 0.7 A
N-Ch
-
1.2
-
VDS = -15 V, ID = -0.5 A
P-Ch
-
0.6
48
V
nA
μA
A
Ω
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
S15-1925-Rev. A, 17-Aug-15
td(on)
tr
td(off)
tf
VGS = 0 V
VDS = 15 V, f = 1 MHz
N-Ch
-
38
VGS = 0 V
VDS = -15 V, f = 1 MHz
P-Ch
-
40
50
VGS = 0 V
VDS = 15 V, f = 1 MHz
N-Ch
-
14
21
VGS = 0 V
VDS = -15 V, f = 1 MHz
P-Ch
-
14
21
VGS = 0 V
VDS = 15 V, f = 1 MHz
N-Ch
-
6
10
VGS = 0 V
VDS = -15 V, f = 1 MHz
P-Ch
-
5
9
VGS = 4.5 V
VDS = 15 V, ID = 0.7 A
N-Ch
-
1
1.4
VGS = -4.5 V
VDS = -15 V, ID = -0.5 A
P-Ch
-
1.2
1.6
VGS = 4.5 V
VDS = 15 V, ID = 0.7 A
N-Ch
-
0.2
-
VGS = -4.5 V
VDS = -15 V, ID = -0.5 A
P-Ch
-
0.3
-
VGS = 4.5 V
VDS = 15 V, ID = 0.7 A
N-Ch
-
0.4
-
VGS = -4.5 V
VDS = -15 V, ID = -0.5 A
P-Ch
-
0.6
-
N-Ch
5.8
-
17.3
P-Ch
3.7
-
11.1
VDD = 15 V, RL = 20 Ω
ID ≅ 0.7 A, VGEN = 4.5 V, Rg = 1 Ω
N-Ch
-
3
6
VDD = -15 V, RL = 20 Ω
ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω
P-Ch
-
4
8
VDD = 15 V, RL = 20 Ω
ID ≅ 0.7 A, VGEN = 4.5 V, Rg = 1 Ω
N-Ch
-
18
28
VDD = -15 V, RL = 20 Ω
ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω
P-Ch
-
39
50
VDD = 15 V, RL = 20 Ω
ID ≅ 0.7 A, VGEN = 4.5 V, Rg = 1 Ω
N-Ch
-
8
14
VDD = -15 V, RL = 20 Ω
ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω
P-Ch
-
10
16
VDD = 15 V, RL = 20 Ω
ID ≅ 0.7 A, VGEN = 4.5 V, Rg = 1 Ω
N-Ch
-
32
46
VDD = -15 V, RL = 20 Ω
ID ≅ -0.5 A, VGEN = -4.5 V, Rg = 1 Ω
P-Ch
-
17
25
f = 1 MHz
pF
nC
Ω
ns
Document Number: 62993
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1539EH
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
N-Ch
-
-
3.3
P-Ch
-
-
-3.3
IS = 0.5 A
N-Ch
-
0.8
1.2
IS = -0.4 A
P-Ch
-
-0.8
-1.2
UNIT
Source-Drain Diode Ratings and Characteristics b
Pulsed Current a
ISM
Forward Voltage
VSD
TC = 25 °C
A
V
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1925-Rev. A, 17-Aug-15
Document Number: 62993
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1539EH
www.vishay.com
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
2.0
3.0
VGS = 10 V thru 4 V
2.4
ID - Drain Current (A)
ID - Drain Current (A)
1.6
1.2
0.8
VGS = 3 V
1.8
TC = 25 °C
1.2
0.6 TC = 125 °C
0.4
TC = - 55 °C
VGS = 2 V
0.0
0.0
0.0
0.4
0.8
1.2
1.6
0
2.0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1.0
60
50
C - Capacitance (pF)
0.8
RDS(on) - On-Resistance (Ω)
10
0.6
0.4
VGS = 4.5 V
Ciss
40
30
Coss
20
Crss
0.2
10
VGS = 10 V
0.0
0
0.0
0.4
0.8
1.2
1.6
0
2.0
5
ID - Drain Current (A)
10
15
20
25
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
30
Capacitance
2.0
10
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 0.5 A
ID = 0.7 A
8
6
4
2
0
0.0
0.3
0.6
0.9
1.2
1.7
VGS =10 V
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50 - 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1925-Rev. A, 17-Aug-15
175
Document Number: 62993
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1539EH
www.vishay.com
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
1.0
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.8
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.6
TJ = 150 °C
0.4
0.2
TJ = 25 °C
0.001
0.0
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
0
1.2
Source Drain Diode Forward Voltage
40
VDS - Drain-to-Source Voltage (V)
0.2
VGS(th) Variance (V)
10
On-Resistance vs. Gate-to-Source Voltage
0.5
ID = 5 mA
- 0.1
- 0.4
ID = 250 μA
- 0.7
- 1.0
- 50 - 25
2
4
6
8
VGS - Gate-to-Source Voltage (V)
0
25
50
75
100
125
150
ID = 1 mA
38
36
34
32
30
- 50 - 25
175
TJ - Temperature (°C)
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
10
ID - Drain Current (A)
IDM Limited
1
100 μs
Limited by RDS(on)*
1 ms
ID Limited
10 ms
0.1
100 ms, 1s, 10 s, DC
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S15-1925-Rev. A, 17-Aug-15
Document Number: 62993
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1539EH
www.vishay.com
Vishay Siliconix
N-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R thJA = 220 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10-4
t1
t2
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
S15-1925-Rev. A, 17-Aug-15
Document Number: 62993
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1539EH
www.vishay.com
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1.0
0.5
0.4
VGS = 10 V thru 6 V
ID - Drain Current (A)
ID - Drain Current (A)
0.8
0.6
VGS = 5 V
0.4
VGS = 4 V
0.2
0.3
TC = 25 °C
0.2
0.1
TC = 125 °C
0.0
0.0
0.3
0.6
0.9
1.2
1.5
VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
5
10
60
50
C - Capacitance (pF)
4
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0.0
3
2
VGS = 4.5V
1
Ciss
40
30
20
Coss
10
Crss
VGS =10 V
0
0
0.0
0.2
0.4
0.6
0.8
1.0
0
5
10
On-Resistance vs. Drain Current
20
25
30
Capacitance
10
2.0
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
15
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
8
ID = -0.5 A
VDS = -15 V
6
4
2
0
0.0
0.3
0.6
0.9
1.2
1.5
ID = 0.3 A
1.7
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50 - 25
0
25
50
75
100
125
150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
S15-1925-Rev. A, 17-Aug-15
175
Document Number: 62993
7
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1539EH
www.vishay.com
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
5
10
4
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
3
TJ = 150 °C
2
1
TJ = 25 °C
0.001
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
4
6
8
10
VGS - Gate-to-Source Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
VDS - Drain-to-Source Voltage (V)
- 28
0.7
VGS(th) Variance (V)
2
VSD - Source-to-Drain Voltage (V)
ID = 250 μA
0.4
ID = 5 mA
0.1
- 0.2
- 0.5
- 50 - 25
0
25
50
75
100
125
150
- 30
ID = 1 mA
- 32
- 34
- 36
- 38
- 50 - 25
175
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
TJ - Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
10
ID - Drain Current (A)
IDM Limited
100 µs
1
Limited by RDS(on)*
1 ms
ID Limited
10 ms
0.1
100 ms
1s, 10 s, DC
TC = 25 °C
Single Pulse
0.01
0.01
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
S15-1925-Rev. A, 17-Aug-15
Document Number: 62993
8
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1539EH
www.vishay.com
Vishay Siliconix
P-CHANNEL THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 220 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62993.
S15-1925-Rev. A, 17-Aug-15
Document Number: 62993
9
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
SC-70
Ordering codes for the SQ rugged series power MOSFETs in the SC-70 package:
OLD ORDERING CODE a
NEW ORDERING CODE
SQ1421EDH
-
SQ1421EDH-T1_GE3
SQ1431EH
SQ1431EH-T1-GE3
SQ1431EH-T1_GE3
SQ1440EH
-
SQ1440EH-T1_GE3
SQ1470AEH
-
SQ1470AEH-T1_GE3
SQ1539EH
-
SQ1539EH-T1_GE3
SQ1563AEH
-
SQ1563AEH-T1_GE3
DATASHEET PART NUMBER
SQ1902AEL
-
SQ1902AEL-T1_GE3
SQ1912AEEH
-
SQ1912AEEH-T1_GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 11-Nov-15
Document Number: 65839
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SCĆ70:
6ĆLEADS
MILLIMETERS
6
5
Dim
A
A1
A2
b
c
D
E
E1
e
e1
L
4
E1 E
1
2
3
-B-
e
b
e1
D
-Ac
A2 A
L
A1
Document Number: 71154
06-Jul-01
INCHES
Min
Nom
Max
Min
Nom
Max
0.90
–
1.10
0.035
–
0.043
–
–
0.10
–
–
0.004
0.80
–
1.00
0.031
–
0.039
0.15
–
0.30
0.006
–
0.012
0.10
–
0.25
0.004
–
0.010
1.80
2.00
2.20
0.071
0.079
0.087
1.80
2.10
2.40
0.071
0.083
0.094
1.15
1.25
1.35
0.045
0.049
0.053
0.65BSC
0.026BSC
1.20
1.30
1.40
0.047
0.051
0.055
0.10
0.20
0.30
0.004
0.008
0.012
7_Nom
7_Nom
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5550
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1
AN816
Vishay Siliconix
Dual-Channel LITTLE FOOTR 6-Pin SC-70 MOSFET
Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
87 (mil)
26 (mil)
The new dual 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout, and
thermal performance for the dual-channel version.
6
5
96 (mil)
71 (mil)
48 (mil)
23 (mil)
61 (mil)
1
PIN-OUT
4
2
3
0.0 (mil)
Figure 1 shows the pin-out description and Pin 1 identification
for the dual-channel SC-70 device in the 6-pin configuration.
Both n-and p-channel devices are available in this package –
the drawing example below illustrates the p-channel device.
26 (mil)
16 (mil)
FIGURE 2.
SOT-363
SC-70 (6-LEADS)
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Top View
FIGURE 1.
For package dimensions see outline drawing SC-70 (6-Leads)
(http://www.vishay.com/doc?71154)
BASIC PAD PATTERNS
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286) for the SC-70
6-pin basic pad layout and dimensions. This pad pattern is
sufficient for the low-power applications for which this package
is intended. Increasing the drain pad pattern (Figure 2) yields
a reduction in thermal resistance and is a preferred footprint.
Document Number: 71405
12-Dec-03
8 (mil)
SC-70 (6 leads) Dual
EVALUATION BOARD FOR THE DUALCHANNEL SC70-6
The 6-pin SC-70 evaluation board (EVB) shown in Figure 3
measures 0.6 in. by 0.5 in. The copper pad traces are the same
as described in the previous section, Basic Pad Patterns. The
board allows for examination from the outer pins to the 6-pin
DIP connections, permitting test sockets to be used in
evaluation testing.
The thermal performance of the dual 6-pin SC-70 has been
measured on the EVB, comparing both the copper and Alloy
42 leadframes. This test was then repeated using the 1-inch2
PCB with dual-side copper coating.
A helpful way of displaying the thermal performance of the
6-pin SC-70 dual copper leadframe is to compare it to the
traditional Alloy 42 version.
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1
AN816
Vishay Siliconix
Front of Board SC70-6
Back of Board SC70-6
S1
D1
G1
G2
D2
S2
vishay.com
SC70−6 DUAL
FIGURE 3.
THERMAL PERFORMANCE
Junction-to-Foot Thermal Resistance
(the Package Performance)
COOPER LEADFRAME
Room Ambient 25 _C
Thermal performance for the dual SC-70 6-pin package is
measured as junction-to-foot thermal resistance, in which the
“foot” is the drain lead of the device as it connects with the
body. The junction-to-foot thermal resistance for this device is
typically 80_C/W, with a maximum thermal resistance of
approximately 100_C/W. This data compares favorably with
another compact, dual-channel package – the dual TSOP-6 –
which features a typical thermal resistance of 75_C/W and a
maximum of 90_C/W.
PD +
Elevated Ambient 60 _C
T J(max) * T A
Rq JA
PD +
T J(max) * T A
Rq JA
o
o
P D + 150 Co* 25 C
224 CńW
o
o
P D + 150 Co* 60 C
224 CńW
P D + 558 mW
P D + 402 mW
Although they are intended for low-power applications,
devices in the 6-pin SC-70 dual-channel configuration will
handle power dissipation in excess of 0.5 W.
TESTING
Power Dissipation
The typical RθJA for the dual-channel 6-pin SC-70 with a
copper leadframe is 224_C/W steady-state, compared to
413_C/W for the Alloy 42 version. All figures are based on the
1-inch2 FR4 test board. The following example shows how the
thermal resistance impacts power dissipation for the dual 6-pin
SC-70 package at varying ambient temperatures.
To further aid the comparison of copper and Alloy 42
leadframes, Figures 4 and 5 illustrate the dual-channel 6-pin
SC-70 thermal performance on two different board sizes and
pad patterns. The measured steady-state values of RθJA for
the dual 6-pin SC-70 with varying leadframes are as follows:
LITTLE FOOT 6-PIN SC-70
1) Minimum recommended pad pattern on
the EVB board (see Figure 3).
Alloy 42 Leadframe
1-inch2
2) Industry standard
PCB with
maximum copper both sides.
ALLOY 42 LEADFRAME
Room Ambient 25 _C
PD +
T J(max) * T A
PD +
T J(max) * T A
Rq JA
o
o
P D + 150 Co* 25 C
413 CńW
o
o
P D + 150 Co* 60 C
413 CńW
P D + 303 mW
P D + 218 mW
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2
Rq JA
Elevated Ambient 60 _C
Alloy 42
Copper
518_C/W
344_C/W
413_C/W
224_C/W
The results indicate that designers can reduce thermal
resistance (θJA) by 34% simply by using the copper leadframe
device as opposed to the Alloy 42 version. In this example, a
174_C/W reduction was achieved without an increase in board
area. If an increase in board size is feasible, a further 120_C/W
reduction can be obtained by utilizing a 1-inch2. PCB area.
The Dual copper leadframe versions have the following suffix:
Dual:
Compl.:
Si19xxEDH
Si15xxEDH
Document Number: 71405
12-Dec-03
AN816
500
500
400
400
Thermal Resistance (C/W)
Thermal Resistance (C/W)
Vishay Siliconix
300
Alloy 42
200
Copper
100
300
Alloy
42
200
100
Copper
0
0
10-5
10-4
10-3
10-2
10-1
1
10
100
1000
10-5
Dual SC70-6 Thermal Performance on EVB
Document Number: 71405
12-Dec-03
10-3
10-2
10-1
1
10
100
1000
Time (Secs)
Time (Secs)
FIGURE 4.
10-4
FIGURE 5.
Dual SC70-6 Comparison on 1-inch2 PCB
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3
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
0.026
(0.648)
0.045
(1.143)
0.096
(2.438)
(1.702)
0.016
0.026
0.010
(0.406)
(0.648)
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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18
Document Number: 72602
Revision: 21-Jan-08
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Revision: 02-Oct-12
1
Document Number: 91000