Si5855CDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • Ultra Low VF Schottky • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 4.1 nC APPLICATIONS SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)a 20 0.375 at 1 A 1 • Charging Switch for Portable Devices - With Integrated Low VF Trench Schottky Diode 1206-8 ChipFET® 1 S K D A A K A K G S Marking Code D G JG XXX D Bottom View Lot Traceability and Date Code Part # Code P-Channel MOSFET Ordering Information: Si5855CDC-T1-E3 (Lead (Pb)-free) Si5855CDC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Symbol VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) IDM TC = 25 °C TA = 25 °C Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature)d, e Document Number: 68910 S10-0548-Rev. B, 08-Mar-10 ID Unit V - 3.7a - 3.0 - 2.5b, c - 2.0b, c - 10 A a IS IF IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit - 20 20 ±8 PD TJ, Tstg - 2.3 - 1.1b, c 1 7 2.8 1.8 1.3b, c 0.8b, c 3.1 2.0 1.9 1.2 - 55 to 150 260 W W °C www.vishay.com 1 Si5855CDC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum RthJA 82 99 Maximum Junction-to-Foot (Drain) (MOSFET) RthJF 35 45 Maximum Junction-to-Ambient (Schottky)b, c, g RthJA 54 65 Maximum Junction-to-Foot (Drain) (Schottky) RthJF 30 40 Maximum Junction-to-Ambient (MOSFET)b, c, f Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on FR4 board. c. t ≤ 5 s. d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for MOSFETs is 130 °C/W. g. Maximum under steady state conditions for Schottky is 115 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs - 19 ID = - 250 µA VDS = VGS, ID = - 250 µA V mV/°C 2 - 0.45 -1 V ns VDS = 0 V, VGS = ± 8 V ± 100 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 10 µA A VGS = - 4.5 V, ID = - 2.5 A 0.120 0.144 VGS = - 2.5 V, ID = - 2.2 A 0.150 0.180 VGS = - 1.8 V, ID = - 2.0 A 0.185 0.222 VDS = - 10 V, ID = - 2.5 A 18 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 Rg 276 VDS = - 10 V, VGS = 0 V, f = 1 MHz 43 VDS = - 10 V, VGS = - 5 V, ID = - 2.5 A VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A 4.5 6.8 4.1 6.2 0.6 f = 1 MHz VDD = - 10 V, RL = 5 Ω ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω 1.1 5.5 11 11 17 34 51 22 33 tf 8 16 td(on) 5 10 td(off) tr td(off) tf nC 1.0 td(on) tr pF 60 VDD = - 10 V, RL = 5 Ω ID ≅ - 2 A, VGEN = - 5 V, Rg = 1 Ω 14 21 17 26 8 16 Ω ns Document Number: 68910 S10-0548-Rev. B, 08-Mar-10 Si5855CDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics TC = 25 °C IS Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 2.3 - 10 IS = - 2 A, VGS = 0 V IF = - 2 A dI/dt = 100 A/µs TJ = 25 °C A - 0.8 - 1.2 V 23 35 ns 13 20 nC 10 ns 13 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Test Conditions CT Junction Capacitance Typ. Max. IF = 1 A Min. 0.34 0.375 IF = 1 A, TJ = 125 °C 0.255 0.290 Vr = 20 V 0.05 0.500 Vr = 20 V, TJ = 85 °C 2 20 Vr = 20 V, TJ = 125 °C 10 100 Vr = 10 V 90 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 10 VGS = 5 V thru 2.5 V VGS = 2 V I D - Drain Current (A) I D - Drain Current (A) 8 6 4 VGS = 1.5 V 1.5 1.0 TC = 25 °C 0.5 2 TC = 125 °C VGS = 1 V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics Document Number: 68910 S10-0548-Rev. B, 08-Mar-10 5 0.0 0.0 TC = - 55 °C 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics www.vishay.com 3 Si5855CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 540 450 VGS = - 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.25 0.20 VGS = - 2.5 V 0.15 0.10 VGS = - 4.5 V 360 Ciss 270 180 0.05 90 0.00 0 Coss Crss 0 2 4 6 8 10 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On Resistance vs. Drain Current Capacitance 20 1.5 5 4 VDS = 10 V 3 VDS = 16 V 2 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 2.5 A VGS = 4.5 V; I D = 2.5 A 1.1 0.9 1 VGS = 2.5 V; I D = 2.2 A 0.7 - 50 0 0 1 2 3 4 5 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 150 0.25 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.5 A 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 www.vishay.com 4 0.20 TJ = 125 °C 0.15 0.10 TJ = 25 °C 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp. On-Resistance vs. Gate-to-Source Voltage 8 Document Number: 68910 S10-0548-Rev. B, 08-Mar-10 Si5855CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.7 5 0.6 4 0.5 Power (W) VGS(th) (V) ID = 250 µA 0.4 0.3 0.2 - 50 3 2 1 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 10 100 100 I D - Drain Current (A) 10 Limited by RDS(on)* 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68910 S10-0548-Rev. B, 08-Mar-10 www.vishay.com 5 Si5855CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 I D - Drain Current (A) 4 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4 1.2 3 0.9 Power (W) Power (W) Current Derating* 2 1 0.6 0.3 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68910 S10-0548-Rev. B, 08-Mar-10 Si5855CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 10 I F - Forward Current (A) I R - Reverse Current (mA) 10 1 0.1 20 V 10 V 0.01 TJ = 150 °C 1 TJ = 25 °C 0.001 0.0001 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) Reverse Current vs. Junction Temperature Document Number: 68910 S10-0548-Rev. B, 08-Mar-10 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF - Forward Voltage Drop (V) Forward Voltage Drop www.vishay.com 7 Si5855CDC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 600 CT - Junction Capacitance (pF) 500 400 300 200 100 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 95 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 100 10 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68910. www.vishay.com 8 Document Number: 68910 S10-0548-Rev. B, 08-Mar-10 Package Information Vishay Siliconix 1206-8 ChipFETR 4 L D 8 7 6 5 4 1 S 2 e 3 E1 5 6 7 8 4 3 2 1 E 4 b x c Backside View 2X 0.10/0.13 R C1 A DETAIL X NOTES: 1. All dimensions are in millimeaters. 2. Mold gate burrs shall not exceed 0.13 mm per side. 3. Leadframe to molded body offset is horizontal and vertical shall not exceed 0.08 mm. 4. Dimensions exclusive of mold gate burrs. 5. No mold flash allowed on the top and bottom lead surface. MILLIMETERS Dim A b c c1 D E E1 e L S INCHES Min Nom Max Min Nom Max 1.00 − 1.10 0.039 − 0.043 0.25 0.30 0.35 0.010 0.012 0.014 0.1 0.15 0.20 0.004 0.006 0.008 0 − 0.038 0 − 0.0015 2.95 3.05 3.10 0.116 0.120 0.122 1.825 1.90 1.975 0.072 0.075 0.078 1.55 1.65 1.70 0.061 0.065 0.067 0.65 BSC 0.28 − 0.0256 BSC 0.42 0.011 − 0.55 BSC 0.022 BSC 5_Nom 5_Nom 0.017 ECN: C-03528—Rev. F, 19-Jan-04 DWG: 5547 Document Number: 71151 15-Jan-04 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET® 0.093 0.026 0.016 0.010 (0.650) (0.406) (0.244) 0.036 (0.914) 0.022 (0.559) (2.032) 0.080 (2.357) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 2 Document Number: 72593 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000