Si5913DC Datasheet

Si5913DC
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET with Schottky Diode
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)a
0.084 at VGS = - 10 V
- 4f
- 20
0.108 at VGS = - 4.5 V
- 4f
- 3.5
0.175 at VGS = - 2.5 V
Qg (Typ.)
4 nC
• Halogen-free According to IEC 61249-2-21
Definition
• LITTLE FOOT® Plus Schottky Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SCHOTTKY PRODUCT SUMMARY
VKA (V)
Vf (V)
Diode Forward Voltage
20
0.5 at 1 A
IF (A)a
2
• HDD
- DC/DC Converter
• Asynchronous Rectification
1206-8 ChipFET®
S
A
D
K
1
A
K
A
K
G
S
D
Marking Code
G
D
DJ
XX
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5913DC-T1-E3 (Lead (Pb)-free)
Si5913DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage (MOSFET)
Limit
Reverse Voltage (Schottky)
VKA
20
Gate-Source Voltage (MOSFET)
VGS
± 12
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TA = 25 °C
ID
TA = 70 °C
IDM
Pulsed Drain Current (MOSFET)
Continuous Source-Drain Diode Current
(MOSFET Diode Conduction)
TC = 25 °C
TA = 25 °C
Maximum Power Dissipation (MOSFET)
IFM
Soldering Recommendation (Peak Temperature)g, h
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
- 2.9b, c
- 15
- 1.4b, c
2b
5
3.1
2.0
TA = 25 °C
1.7b, c
PD
1.1b, c
3.1
TC = 70 °C
2.0
TA = 25 °C
1.3b, c
TA = 70 °C
0.8b, c
- 55 to 150
TJ, Tstg
A
- 2.6
TC = 70 °C
TC = 25 °C
Operating Junction and Storage Temperature Range
- 4f
- 3.7b, c
TC = 25 °C
TA = 70 °C
Maximum Power Dissipation (Schottky)
IS
IF
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
V
- 4f
TC = 25 °C
TC = 70 °C
Unit
- 20
260
W
°C
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Si5913DC
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
RthJA
RthJF
t≤5s
Steady State
t≤5s
Steady State
Maximum Junction-to-Ambient (MOSFET)b, d
Maximum Junction-to-Foot (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)b, e
Maximum Junction-to-Foot (Drain) (Schottky)
Typical
62
32
77
33
Maximum
74
40
95
40
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s
d. Maximum under steady state conditions is 115 °C/W.
e. Maximum under steady state conditions is 130 °C/W.
f. Package limited.
g. See Solder Profile (www.vishay.com/doc?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed an is not required
to ensure adequate bottom side soldering interconnection.
h. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
- 20
mV/°C
3
- 0.6
- 1.5
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 10 V
VGS = - 10 V, ID = - 3.7 A
- 15
µA
A
0.070
0.084
VGS = - 4.5 V, ID = - 3.2 A
0.090
0.108
VGS = - 2.5 V, ID = - 2.5 A
0.140
0.175
VDS = - 10 V, ID = - 3.7 A
6
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
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2
330
VDS = - 10 V, VGS = 0 V, f = 1 MHz
VDS = - 10 V, VGS = - 10 V, ID = - 3.7 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 3.7 A
tr
pF
8
12
4
6
0.8
VDD = - 10 V, RL = 3.4 Ω
ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω
1.2
6
12
3
6
10
20
16
24
tf
8
15
td(on)
18
27
tr
td(off)
tf
nC
1.4
f = 1 MHz
td(on)
td(off)
80
57
VDD = - 10 V, RL = 3.4 Ω
ID ≅ - 2.9 A, VGEN = - 4.5 V, Rg = 1 Ω
40
60
18
27
10
15
Ω
ns
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
Si5913DC
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
IS
TC = 25 °C
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
- 1.2
- 15
IS = - 2.9 A, VGS = 0 V
IF = - 2.9 A, dI/dt = 100 A/µs, TJ = 25 °C
A
- 0.75
- 1.2
V
23
35
ns
14
21
nC
11
ns
12
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
Symbol
VF
Irm
CT
Test Conditions
IF = 1 A
Min.
Typ.
Max.
0.42
0.50
IF = 1 A, TJ = 125 °C
0.36
0.43
Vr = 5 V
0.015
0.08
Vr = 5 V, TJ = 85 °C
0.50
5.00
Vr = 20 V
0.02
0.10
Vr = 20 V, TJ = 85 °C
0.7
7.00
Vr = 20 V, TJ = 125 °C
5
50
Vr = 10 V
60
Unit
V
mA
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
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Si5913DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
2.0
15
VGS = 10 V thru 4 V
1.6
ID - Drain Current (A)
ID - Drain Current (A)
12
VGS = 3 V
9
6
TC = - 55 °C
1.2
0.8
TC = 25 °C
0.4
3
TC = 125 °C
VGS = 2 V
0.0
0.0
0
0
1
2
3
4
5
0.4
0.8
1.2
1.6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2.0
600
0.20
500
0.16
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
VGS = 2.5 V
0.12
VGS = 4.5 V
0.08
VGS = 10 V
0.04
Ciss
400
300
200
Coss
100
Crss
0
0.00
0
3
6
9
12
0
15
ID - Drain Current (A)
4
8
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
1.5
10
ID = 3.7 A
VGS = 10 V, ID = 3.7 A
8
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
VDS = 10 V
6
VDS = 16 V
4
1.3
VGS = 4.5 V
ID = 3.2 A
1.1
0.9
2
0
0.0
1.5
3.0
4.5
6.0
Qg - Total Gate Charge (nC)
Gate Charge
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4
7.5
9.0
0.7
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
Si5913DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.20
10
ID = 3.7 A
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
0.16
TJ = 150 °C
TJ = 25 °C
1
0.1
0.0
0.12
TJ = 125 °C
0.08
TJ = 25 °C
0.04
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
3
VSD - Source-to-Drain Voltage (V)
6
9
12
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30
1.3
25
1.1
Power (W)
V GS(th) (V)
20
ID = 250 µA
0.9
15
10
0.7
5
0.5
- 50
- 25
0
25
50
75
100
125
0
10-4
150
10-3
10-2
10-1
1
10
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1 ms
1
10 ms
100 ms
1 s, 10 s
DC
0.1
TA = 25 °C
Single Pulse
0.01
0.1
BVDSS
Limited
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
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Si5913DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
4.0
6
3.2
4
Power (W)
ID - Drain Current (A)
5
Package Limited
3
2.4
1.6
2
0.8
1
0.0
0
0
25
50
75
100
125
0
150
25
50
75
100
125
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power Derating, Junction-to-Foot
150
1.5
Power (W)
1.2
0.9
0.6
0.3
0.0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
Si5913DC
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 95 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10 -4
4. Surface Mounted
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
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Si5913DC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
10
10-1
10-3
I S - Source Current (A)
I R - Reverse Current (mA)
10-2
VR = 20 V
VR = 15 V
10-4
10-5
VR = 10 V
10-6
1
TJ = 150 °C
TJ = 25 °C
0.1
0.01
10-7
10-8
- 50
0.001
- 25
0
25
50
75
100
125
150
0.0
0.2
0.6
0.8
1.0
Forward Diode Voltage
Reverse Current vs. Junction Temperature
250
20
200
16
150
12
Power (W)
C - Capacitance (pF)
0.4
VSD - Source-to-Drain Voltage (V)
TJ - Junction Temperature (°C)
100
50
8
4
0
0
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8
4
8
12
16
20
0
10-4
10-3
10-2
10-1
1
10
VDS - Drain-to-Source Voltage (V)
Time (s)
Capacitance
Single Pulse Power, Junction-to-Ambient
100
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
Si5913DC
Vishay Siliconix
SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 105 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
100
10
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68920.
Document Number: 68920
S10-0548-Rev. B, 08-Mar-10
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Package Information
Vishay Siliconix
1206-8 ChipFETR
4
L
D
8
7
6
5
4
1
S
2
e
3
E1
5
6
7
8
4
3
2
1
E
4
b
x
c
Backside View
2X 0.10/0.13 R
C1
A
DETAIL X
NOTES:
1.
All dimensions are in millimeaters.
2.
Mold gate burrs shall not exceed 0.13 mm per side.
3.
Leadframe to molded body offset is horizontal and vertical shall not exceed
0.08 mm.
4.
Dimensions exclusive of mold gate burrs.
5.
No mold flash allowed on the top and bottom lead surface.
MILLIMETERS
Dim
A
b
c
c1
D
E
E1
e
L
S
INCHES
Min
Nom
Max
Min
Nom
Max
1.00
−
1.10
0.039
−
0.043
0.25
0.30
0.35
0.010
0.012
0.014
0.1
0.15
0.20
0.004
0.006
0.008
0
−
0.038
0
−
0.0015
2.95
3.05
3.10
0.116
0.120
0.122
1.825
1.90
1.975
0.072
0.075
0.078
1.55
1.65
1.70
0.061
0.065
0.067
0.65 BSC
0.28
−
0.0256 BSC
0.42
0.011
−
0.55 BSC
0.022 BSC
5_Nom
5_Nom
0.017
ECN: C-03528—Rev. F, 19-Jan-04
DWG: 5547
Document Number: 71151
15-Jan-04
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET®
0.093
0.026
0.016
0.010
(0.650)
(0.406)
(0.244)
0.036
(0.914)
0.022
(0.559)
(2.032)
0.080
(2.357)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72593
Revision: 21-Jan-08
Legal Disclaimer Notice
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000