Si5855CDC Vishay Siliconix P-Channel 20-V (D-S) MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • LITTLE FOOT® Plus Power MOSFET • Ultra Low VF Schottky Qg (Typ.) RoHS APPLICATIONS 4.1 nC COMPLIANT • Charging Switch for Portable Devices - With Integrated Low VF Trench Schottky Diode SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A)a 0.375 at 1 A 1 20 ® 1206-8 ChipFET 1 S K D A A K A K G S Marking Code D G JG XXX D Bottom View Lot Traceability and Date Code Part # Code P-Channel MOSFET Ordering Information: Si5855CDC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Symbol VDS VKA VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) IDM TC = 25 °C TA = 25 °C Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature)d, e Document Number: 68910 S-82299-Rev. A, 22-Sep-08 ID IS IF IFM TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD TJ, Tstg Limit - 20 20 ±8 Unit V - 3.7a - 3.0 - 2.5b, c - 2.0b, c - 10 A 2.3a - 1.1b, c 1 7 2.8 1.8 1.3b, c 0.8b, c 3.1 2.0 1.9 1.2 - 55 to 150 260 W W °C www.vishay.com 1 Si5855CDC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambient (MOSFET)b, c, f RthJA 82 99 Maximum Junction-to-Foot (Drain) (MOSFET) RthJF 35 45 b, c, g RthJA 54 65 RthJF 30 40 Maximum Junction-to-Ambient (Schottky) Maximum Junction-to-Foot (Drain) (Schottky) Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on FR4 board. c. t ≤ 5 s. d. See Solder Profile (http://www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions for MOSFETS is 130 °C/W. g. Maximum under Steady State conditions for Schottky is 115 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ V - 19 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA -1 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 ns Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS ≤ - 5 V, VGS = - 4.5 V 2 - 0.45 - 10 µA A VGS = - 4.5 V, ID = - 2.5 A 0.120 0.144 VGS = - 2.5 V, ID = - 2.2 A 0.150 0.180 VGS = - 1.8 V, ID = - 2.0 A 0.185 0.222 VDS = - 10 V, ID = - 2.5 A 18 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 276 VDS = - 10 V, VGS = 0 V, f = 1 MHz 60 VDS = - 10 V, VGS = - 5 V, ID = - 2.5 A 4.5 6.8 4.1 6.2 43 VDS = - 10 V, VGS = - 4.5 V, ID = - 2.5 A tr 0.6 VDD = - 10 V, RL = 5 Ω ID ≅ - 2 A, VGEN = - 4.5 V, Rg = 1 Ω 1.1 5.5 11 11 17 34 51 22 33 tf 8 16 td(on) 5 10 14 21 tr td(off) tf nC 1.0 f = 1 MHz td(on) td(off) pF VDD = - 10 V, RL = 5 Ω ID ≅ - 2 A, VGEN = - 5 V, Rg = 1 Ω 17 26 8 16 Ω ns Document Number: 68910 S-82299-Rev. A, 22-Sep-08 Si5855CDC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics TC = 25 °C IS Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 2.3 - 10 IS = - 2 A, VGS = 0 V IF = - 2 A dI/dt = 100 A/µs TJ = 25 °C A - 0.8 - 1.2 V 23 35 ns 13 20 nC 10 ns 13 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Test Conditions CT Junction Capacitance Typ. Max. IF = 1 A Min. 0.34 0.375 IF = 1 A, TJ = 125 °C 0.255 0.290 Vr = 20 V 0.05 0.500 Vr = 20 V, TJ = 85 °C 2 20 Vr = 20 V, TJ = 125 °C 10 100 Vr = 10 V 90 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 10 VGS = 5 thru 2.5 V VGS = 2 V I D - Drain Current (A) I D - Drain Current (A) 8 6 4 VGS = 1.5 V 1.5 1.0 TC = 25 °C 0.5 2 TC = 125 °C VGS = 1 V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics Document Number: 68910 S-82299-Rev. A, 22-Sep-08 5 0.0 0.0 TC = - 55 °C 0.3 0.6 0.9 1.2 1.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics www.vishay.com 3 Si5855CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.30 540 450 VGS = - 1.8 V C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.25 0.20 VGS = - 2.5 V 0.15 0.10 VGS = - 4.5 V 360 Ciss 270 180 0.05 90 0.00 0 Coss Crss 0 2 4 6 8 10 0 4 8 12 16 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On Resistance vs. Drain Current Capacitance 20 1.5 5 4 VDS = 10 V 3 VDS = 16 V 2 1.3 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 2.5 A VGS = 4.5 V; I D = 2.5 A 1.1 0.9 1 VGS = 2.5 V; I D = 2.2 A 0.7 - 50 0 0 1 2 3 4 5 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 150 0.25 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 2.5 A 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 www.vishay.com 4 0.20 TJ = 125 °C 0.15 0.10 TJ = 25 °C 0.05 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Forward Diode Voltage vs. Temp. On-Resistance vs. Gate-to-Source Voltage 8 Document Number: 68910 S-82299-Rev. A, 22-Sep-08 Si5855CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.7 5 0.6 4 0.5 Power (W) VGS(th) (V) ID = 250 µA 0.4 0.3 0.2 - 50 3 2 1 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 10 100 100 I D - Drain Current (A) 10 Limited by RDS(on)* 100 µs 1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 68910 S-82299-Rev. A, 22-Sep-08 www.vishay.com 5 Si5855CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 5 I D - Drain Current (A) 4 3 2 1 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 4 1.2 3 0.9 Power (W) Power (W) Current Derating* 2 1 0.6 0.3 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Foot Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68910 S-82299-Rev. A, 22-Sep-08 Si5855CDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 10 I F - Forward Current (A) I R - Reverse Current (mA) 10 1 0.1 20 V 10 V 0.01 TJ = 150 °C 1 TJ = 25 °C 0.001 0.0001 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) Reverse Current vs. Junction Temperature Document Number: 68910 S-82299-Rev. A, 22-Sep-08 150 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 VF - Forward Voltage Drop (V) Forward Voltage Drop www.vishay.com 7 Si5855CDC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 600 CT - Junction Capacitance (pF) 500 400 300 200 100 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Capacitance 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 95 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 100 10 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68910. www.vishay.com 8 Document Number: 68910 S-82299-Rev. A, 22-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1