BAT165A 40 V, 0.75 A medium power Schottky barrier rectifier 2 May 2016 Product data sheet 1. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • Forward current: IF ≤ 0.75 A Reverse voltage: VR ≤ 40 V Low forward voltage typ. VF = 640 mV Low reverse current typ. IR = 1.5 µA Very small SMD plastic package AEC-Q101 qualified 3. Applications • • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption application Automotive applications Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit IF forward current Tsp ≤ 93 °C; δ = 1 - - 0.75 A VR reverse voltage Tj = 25 °C - - 40 V VF forward voltage IF = 750 mA; tp ≤ 300 µs; δ ≤ 0.02 ; - 640 740 mV VR = 40 V; pulsed; Tj = 25 °C - 1.5 8 µA VR = 40 V; pulsed; Tj = 65 °C - 30 900 µA Tj = 25 °C IR reverse current Scan or click this QR code to view the latest information for this product BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier 4. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode Simplified outline 1 Graphic symbol 2 1 2 sym001 SOD323 5. Ordering information Table 3. Ordering information Type number Package BAT165A Name Description Version SOD323 plastic surface-mounted package; 2 leads SOD323 6. Marking Table 4. Marking codes Type number Marking code BAT165A 2G 7. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 40 V IF forward current Tsp ≤ 93 °C; δ = 1 - 0.75 A IF(AV) average forward current 50 Hz ≤ f ≤ 60 Hz; Tamb ≤ 93 °C; pulsed - 0.5 A - 8 A [1] - 380 mW [2] - 555 mW sinusoidal IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] BAT165A Product data sheet Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier 8. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] [2] [3] [4] Min Typ Max Unit [1][2] - - 330 K/W [1][3] - - 225 K/W [4] - - 45 K/W For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm . Soldering point of cathode tab. aaa-022350 103 Zth(j-a) (K/W) duty cycle = 1 102 0.5 0.25 0.75 0.33 0.2 0.1 0.05 10 0.02 1 10-5 0.01 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BAT165A Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier aaa-022351 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 0.1 0.05 10 0.02 1 10-5 0.01 0 10-4 10-3 10-2 FR4 PCB, mounting pad for cathode 1 cm Fig. 2. 10-1 1 102 10 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 9. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; 40 - - V forward voltage IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02 ; - 300 380 mV - 390 470 mV - 455 540 mV - 550 640 mV - 640 740 mV VR = 30 V; pulsed; Tj = 25 °C - 1 5 µA VR = 40 V; pulsed; Tj = 25 °C - 1.5 8 µA VR = 40 V; pulsed; Tj = 65 °C - 30 900 µA VR = 5 V; pulsed; Tj = 125 °C - 290 700 µA VR = 40 V; pulsed; Tj = 125 °C - 1 8 mA VR = 10 V; f = 1 MHz; Tj = 25 °C - 9 12 pF VF Tj = 25 °C; pulsed Tj = 25 °C IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 250 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IF = 750 mA; tp ≤ 300 µs; δ ≤ 0.02 ; Tj = 25 °C IR Cd reverse current diode capacitance BAT165A Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier aaa-022352 1 IR (A) IF (A) aaa-022353 10-2 (1) 10-3 (2) 10-4 10-1 (2) 10-2 (1) (4) (3) (5) (3) 10-5 (4) 10-6 (5) 10-7 10-8 10-3 10-9 (6) 10-10 10-4 0.0 Fig. 3. 0.2 0.4 0.6 VF (V) 10-11 0.8 0 10 pulsed condition (1) Tj = 150 °C pulsed condition (1) Tj = 150 °C (2) Tj = 125 °C (2) Tj = 125 °C (3) Tj = 85 °C (3) Tj = 85 °C (4) Tj = 25 °C (4) Tj = 65 °C (5) Tj = -40 °C (5) Tj = 25 °C Forward current as a function of forward voltage; typical values (6) Tj = −40 °C Fig. 4. aaa-022354 50 Cd (pF) 20 30 40 Reverse current as a function of reverse voltage; typical values aaa-022355 0.5 PF(AV) (W) 40 VR (V) (2) 0.4 (1) 30 0.3 20 0.2 10 0.1 0 Fig. 5. 0 10 20 30 VR (V) 0 40 0 0.2 0.4 f = 1 MHz; Tamb = 25 °C Tj = 150 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.5 sinusoidal (2) δ = 1 BAT165A Product data sheet Fig. 6. IF(AV) (A) 0.8 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 2 May 2016 0.6 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier aaa-022356 0.04 aaa-022357 0.8 PR(AV) (W) (1) IF(AV) (A) 0.03 0.6 (2) (1) (2) 0.02 (4) 0.01 0 0.4 (3) 0 10 20 30 VR (V) 0.2 0 40 Tj = 125 °C 50 Fig. 8. aaa-022358 0.8 125 150 175 Tamb (°C) Average forward current as a function of ambient temperature; typical values aaa-022359 (1) IF(AV) (A) 0.6 0.6 (2) (2) 0.4 0.4 0.2 0.2 0 25 50 75 100 125 Average forward current as a function of ambient temperature; typical values Product data sheet 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C 2 (1) δ = 1; DC (2) δ = 0.5; f = 50 Hz/60 Hz; pulsed sinusoidal BAT165A 0 150 175 Tamb (°C) FR4 PCB, mounting pad for cathode 1 cm Tj = 150 °C Fig. 9. 100 0.8 (1) 0 75 (1) δ = 1; DC (2) δ = 0.5; f = 50 Hz/60 Hz; pulsed sinusoidal Average reverse power dissipation as a function of reverse voltage; typical values IF(AV) (A) 25 FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1; DC (2) δ = 0.9; f = 20 kHz (3) δ = 0.8; f = 20 kHz (4) δ = 0.5; f = 20 kHz Fig. 7. 0 (1) δ = 1; DC (2) δ = 0.5; f = 50 Hz/60 Hz; pulsed sinusoidal Fig. 10. Average forward current as a function of solder point temperature; typical values All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier 10. Test information duty cycle δ = tcy tp tcy IM tp t aaa-022900 Fig. 11. Duty cycle definition: sinusoidal The current ratings for the sinusoidal waveforms are calculated according to the equations: IF(AV) = IM × 0.3183 with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √(δ/2) with IRMS defined as RMS current. P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 12. Duty cycle definition: square wave 10.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BAT165A Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier 11. Package outline 1.35 1.15 1.1 0.8 0.45 0.15 1 2.7 2.3 1.8 1.6 2 0.40 0.25 0.25 0.10 Dimensions in mm 03-12-17 Fig. 13. Package outline SOD323 12. Soldering 3.05 2.1 solder lands solder resist 1.65 0.95 0.5 (2×) 0.6 (2×) solder paste occupied area 2.2 Dimensions in mm 0.5 (2×) 0.6 (2×) sod323_fr Fig. 14. Reflow soldering footprint for SOD323 BAT165A Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier 5 2.9 1.5 (2×) solder lands solder resist occupied area 2.75 1.2 (2×) Dimensions in mm preferred transport direction during soldering sod323_fw Fig. 15. Wave soldering footprint for SOD323 BAT165A Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes BAT165A v.1 20160502 Product data sheet - - BAT165A Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. Legal information 14.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. 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Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 13 BAT165A NXP Semiconductors 40 V, 0.75 A medium power Schottky barrier rectifier No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Pinning information ............................................... 2 5 Ordering information ............................................. 2 6 Marking ................................................................... 2 7 Limiting values .......................................................2 8 Thermal characteristics .........................................3 9 Characteristics ....................................................... 4 10 10.1 Test information ..................................................... 7 Quality information ............................................... 7 11 Package outline ..................................................... 8 12 Soldering ................................................................ 8 13 Revision history ................................................... 10 14 14.1 14.2 14.3 14.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 May 2016 BAT165A Product data sheet All information provided in this document is subject to legal disclaimers. 2 May 2016 © NXP Semiconductors N.V. 2016. All rights reserved 13 / 13