Data Sheet

PMEG1201AESF
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
13 February 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with
an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra
small Chip-Scale Package (CSP).
2. Features and benefits
•
•
•
•
•
Average forward current IF(AV) ≤ 0.1 A
Reverse voltage VR ≤ 12 V
Low forward voltage typ. VF = 160 mV
Low reverse current typ. IR = 240 µA
Package height typ. 0.3 mm
3. Applications
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Ultra high speed switching
LED backlight for mobile application
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
IF(AV)
average forward
current
δ = 0.5; f = 20 kHz; Tamb ≤ 115 °C;
[1]
Min
Typ
Max
Unit
-
-
0.1
A
-
-
0.1
A
square wave
δ = 0.5; f = 20 kHz; Tsp ≤ 125 °C;
square wave
VR
reverse voltage
Tj = 25 °C
-
-
12
V
VF
forward voltage
IF = 30 mA; tp ≤ 300 µs; δ ≤ 0.02;
-
160
200
mV
-
240
1000
µA
Tj = 25 °C
IR
reverse current
[1]
VR = 5 V; Tj = 25 °C; pulsed
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
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PMEG1201AESF
NXP Semiconductors
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
K
cathode[1]
2
A
anode
Simplified outline
Graphic symbol
1
1
2
2
sym001
Transparent
top view
DSN0603-2 (SOD962-2)
[1]
The marking bar indicates the cathode.
6. Ordering information
Table 3.
Ordering information
Type number
PMEG1201AESF
Package
Name
Description
Version
DSN0603-2
Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3
mm
SOD962-2
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMEG1201AESF
9
PMEG1201AESF
Product data sheet
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PMEG1201AESF
NXP Semiconductors
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
12
V
IF
forward current
Tsp = 120 °C; δ = 1
-
0.14
A
IF(AV)
average forward current
δ = 0.5; f = 20 kHz; Tamb ≤ 115 °C;
-
0.1
A
-
0.1
A
[1]
square wave
δ = 0.5; f = 20 kHz; Tsp ≤ 125 °C;
square wave
IFRM
repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.25
-
2
A
IFSM
non-repetitive peak forward
current
tp = 8 ms; Tj(init) = 25 °C; square wave
-
4
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[2]
-
325
mW
[3]
-
525
mW
[1]
-
950
mW
Tj
junction temperature
-
125
°C
Tamb
ambient temperature
-55
125
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
2
1 cm each.
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
[1]
PMEG1201AESF
Product data sheet
Min
Typ
Max
Unit
[1][2]
-
-
310
K/W
[1][3]
-
-
190
K/W
[1][4]
-
-
105
K/W
[5]
-
-
40
K/W
[2]
[3]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode
[4]
[5]
1 cm each.
Device mounted on a ceramic PCB, Al2O3, standard footprint.
Soldering point of anode tab.
2
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PMEG1201AESF
NXP Semiconductors
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
aaa-006823
103
duty cycle =
Zth(j-a)
(K/W)
1
0.75
102
0.5
0.33
0.25
0.1
0.2
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-006824
103
Zth(j-a)
(K/W)
duty cycle =
102
0.75
0.33
0.2
0.05
10
10-3
1
0.5
0.25
0.1
0.02
0.01
0
10-2
10-1
1
10
102
tp (s)
103
2
FR4 PCB, mounting pad for anode and cathode 1 cm each
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG1201AESF
Product data sheet
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PMEG1201AESF
NXP Semiconductors
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
102
aaa-006825
duty cycle = 1
0.75
Zth(j-a)
(K/W)
0.5
0.33
0.2
0.25
0.1
0.05
0.02
0.01
0
10
10-3
10-2
10-1
1
10
102
tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG1201AESF
Product data sheet
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PMEG1201AESF
NXP Semiconductors
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V(BR)R
reverse breakdown
voltage
IR = 1000 µA; tp = 300 µs; δ = 0.02;
12
-
-
V
forward voltage
IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02;
-
20
60
mV
-
70
110
mV
-
130
170
mV
-
150
190
mV
-
160
200
mV
-
210
250
mV
VR = 5 V; Tj = 25 °C; pulsed
-
240
1000
µA
VR = 10 V; Tj = 25 °C; pulsed
-
370
1500
µA
VR = 12 V; Tj = 25 °C; pulsed
-
430
2000
µA
VR = 1 V; f = 1 MHz; Tj = 25 °C
-
26
-
pF
VR = 10 V; f = 1 MHz; Tj = 25 °C
-
10
-
pF
IF = 200 mA; IR = 200 mA;
-
2.2
-
ns
VF
Tj = 25 °C
Tj = 25 °C
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 20 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 30 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IR
Cd
trr
reverse current
diode capacitance
reverse recovery time
IR(meas) = 40 mA; Tj = 25 °C
PMEG1201AESF
Product data sheet
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PMEG1201AESF
NXP Semiconductors
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
aaa-013228
1
IF
(A)
(2)
(3)
10-1
aaa-013229
10-1
IR
(A)
10-2
(1)
(1)
(2)
(3)
10-3
(5)
(4)
10-2
10-4
(4)
10-5
10-3
10-6
10-4
Fig. 4.
0
0.2
0.4
VF (V)
10-7
0.6
(5)
0
4
pulsed condition
(1) Tj = 125 °C
pulsed condition
(1) Tj = 125 °C
(2) Tj = 85 °C
(2) Tj = 85 °C
(3) Tj = 75 °C
(3) Tj = 75 °C
(4) Tj = 25 °C
(4) Tj = 25 °C
(5) Tj = −40 °C
(5) Tj = −40 °C
Forward current as a function of forward
voltage; typical values
Fig. 5.
aaa-013230
50
8
Reverse current as a function of reverse
voltage; typical values
aaa-013231
20
(4)
PF(AV)
(mW)
Cd
(pF)
(3)
16
40
12
VR (V)
(2)
30
12
20
8
10
4
0
Fig. 6.
0
4
8
VR (V)
0
12
(1)
0
f = 1 MHz; Tamb = 25 °C
Tj = 125 °C
Diode capacitance as a function of reverse
voltage; typical values
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
Fig. 7.
PMEG1201AESF
Product data sheet
100
IF(AV) (mA)
150
Average forward power dissipation as a
function of average forward current; typical
values
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PMEG1201AESF
NXP Semiconductors
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
aaa-013232
250
PR(AV)
(mW)
(1)
IF(AV)
(mA)
(1)
200
aaa-013233
150
(2)
100
(3)
(2)
150
100
(3)
50
(4)
(4)
50
0
0
4
8
VR (V)
0
12
Tj = 85 °C
50
Average reverse power dissipation as a
function of reverse voltage; typical values
aaa-013234
150
100
aaa-013235
(1)
(2)
(3)
50
(4)
50
(4)
100
Tamb (°C)
0
150
FR4 PCB, mounting pad for anode and cathode
50
100
Tamb (°C)
150
Tj = 125 °C
1 cm each
Tj = 125 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 10. Average forward current as a function of
ambient temperature; typical values
Product data sheet
0
Ceramic PCB, Al2O3, standard footprint
2
PMEG1201AESF
150
Average forward current as a function of
ambient temperature; typical values
100
(3)
50
Fig. 9.
IF(AV)
(mA)
(2)
0
Tamb (°C)
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
150
(1)
IF(AV)
(mA)
0
100
FR4 PCB, standard footprint
Tj = 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
Fig. 8.
0
Fig. 11. Average forward current as a function of
ambient temperature; typical values
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PMEG1201AESF
NXP Semiconductors
12 V, 0.1 A low VF MEGA Schottky barrier rectifier
aaa-013236
150
(1)
IF(AV)
(mA)
100
(2)
(3)
50
(4)
0
0
50
100
Tsp (°C)
150
Tj = 125 °C
(1) δ = 1; DC
(2) δ = 0.5; f = 20 kHz
(3) δ = 0.2; f = 20 kHz
(4) δ = 0.1; f = 20 kHz
Fig. 12. Average forward current as a function of solder point temperature; typical values
11. Test information
IF
IR(meas)
time
IR
trr
006aad022
Fig. 13. Reverse recovery definition
P
tcy
duty cycle δ =
tp
tcy
tp
t
006aac658
Fig. 14. Duty cycle definition
PMEG1201AESF
Product data sheet
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12 V, 0.1 A low VF MEGA Schottky barrier rectifier
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with
IRMS defined as RMS current.
12. Package outline
0.325
0.275
0.32
0.28
1
0.03
max
0.15
0.13
0.4
0.625
0.575
2
Dimensions in mm
0.25
0.23
14-12-03
Fig. 15. Package outline DSN0603-2 (SOD962-2)
13. Soldering
Footprint information for reflow soldering of leadless ultra small package; 2 terminals
SOD962-2
0.85
0.4
0.4
R0.025 (8×)
0.24
(2×)
0.14
(2×)
0.2
(2×)
solder land
solder land plus solder paste
solder paste deposit
solder resist
Dimensions in mm
sod962-2_fr
Fig. 16. Reflow soldering footprint for DSN0603-2 (SOD962-2)
PMEG1201AESF
Product data sheet
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12 V, 0.1 A low VF MEGA Schottky barrier rectifier
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMEG1201AESF v. 2
20150213
Product data sheet
-
PMEG1201AESF v. 1
Modifications:
•
PMEG1201AESF v. 1
20140714
PMEG1201AESF
Product data sheet
Product status changed
Preliminary data sheet
-
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PMEG1201AESF
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12 V, 0.1 A low VF MEGA Schottky barrier rectifier
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punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
15. Legal information
15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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NXP Semiconductors does not give any representations or warranties as to
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is deemed to offer functions and qualities beyond those described in the
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
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PMEG1201AESF
Product data sheet
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMEG1201AESF
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12 V, 0.1 A low VF MEGA Schottky barrier rectifier
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................3
9
Thermal characteristics .........................................3
10
Characteristics ....................................................... 6
11
Test information ..................................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 10
14
Revision history ................................................... 11
15
15.1
15.2
15.3
15.4
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
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Date of release: 13 February 2015
PMEG1201AESF
Product data sheet
All information provided in this document is subject to legal disclaimers.
13 February 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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