PMEG4005AESF 40 V, 0.5 A low VF MEGA Schottky barrier rectifier 6 February 2015 Product data sheet 1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a DSN0603-2 (SOD962-2) leadless ultra small Chip-Scale Package (CSP). 2. Features and benefits • • • • • Average forward current IF(AV) ≤ 0.5 A Reverse voltage VR ≤ 40 V Low forward voltage typ. VF = 250 mV Low reverse current typ. IR = 3 µA Package height typ. 0.3 mm 3. Applications • • • • • Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Ultra high speed switching LED backlight for mobile application 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 100 °C; [1] Min Typ Max Unit - - 0.5 A - - 0.5 A square wave δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C; square wave VR reverse voltage Tj = 25 °C - - 40 V VF forward voltage IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; - 250 320 mV Tj = 25 °C IR reverse current VR = 10 V; Tj = 25 °C; pulsed - 3 20 µA trr reverse recovery time IF = 500 mA; IR = 500 mA; - 1.25 - ns IR(meas) = 100 mA; Tj = 25 °C [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Scan or click this QR code to view the latest information for this product PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode[1] 2 A anode Simplified outline Graphic symbol 1 1 2 2 sym001 Transparent top view DSN0603-2 (SOD962-2) [1] The marking bar indicates the cathode. 6. Ordering information Table 3. Ordering information Type number PMEG4005AESF Package Name Description Version DSN0603-2 Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 7. Marking Table 4. Marking codes Type number Marking code PMEG4005AESF Z PMEG4005AESF Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VR reverse voltage Tj = 25 °C - 40 V IF forward current Tsp ≤ 138 °C; δ = 1 - 0.71 A IF(AV) average forward current δ = 0.5; f = 20 kHz; Tamb ≤ 100 °C; - 0.5 A - 0.5 A [1] square wave δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C; square wave IFRM repetitive peak forward current tp = 1 ms; δ ≤ 0.25 - 1.2 A IFSM non-repetitive peak forward current tp = 8 ms; Tj(init) = 25 °C; square wave - 3.5 A Ptot total power dissipation Tamb ≤ 25 °C [2] - 405 mW [3] - 660 mW [1] - 1200 mW Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode 2 1 cm each. 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point [1] PMEG4005AESF Product data sheet Min Typ Max Unit [1][2] - - 310 K/W [1][3] - - 190 K/W [1][4] - - 105 K/W [5] - - 40 K/W [2] [3] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for anode and cathode [4] [5] 1 cm each. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of anode tab. 2 All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier aaa-006823 103 duty cycle = Zth(j-a) (K/W) 1 0.75 102 0.5 0.33 0.25 0.1 0.2 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-006824 103 Zth(j-a) (K/W) duty cycle = 102 0.75 0.33 0.2 0.05 10 10-3 1 0.5 0.25 0.1 0.02 0.01 0 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, mounting pad for anode and cathode 1 cm each Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG4005AESF Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier 102 aaa-006825 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 0.25 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMEG4005AESF Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)R reverse breakdown voltage IR = 100 µA; tp = 300 µs; δ = 0.02; 40 - - V forward voltage IF = 0.1 mA; tp ≤ 300 µs; δ ≤ 0.02; - 120 185 mV - 180 245 mV - 250 320 mV - 370 440 mV - 450 525 mV - 530 630 mV - 600 730 mV - 675 820 mV VR = 10 V; Tj = 25 °C; pulsed - 3 20 µA VR = 40 V; Tj = 25 °C; pulsed - 13 80 µA VR = 1 V; f = 1 MHz; Tj = 25 °C - 18 - pF VR = 10 V; f = 1 MHz; Tj = 25 °C - 7 - pF IF = 500 mA; IR = 500 mA; - 1.25 - ns VF Tj = 25 °C Tj = 25 °C IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 300 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 400 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02; Tj = 25 °C IR Cd trr reverse current diode capacitance reverse recovery time IR(meas) = 100 mA; Tj = 25 °C PMEG4005AESF Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier aaa-011755 1 IF (A) IR (A) (1) 10-1 aaa-011756 10-2 (1) (2) 10-1 (2) 10-3 (3) (3) 10-4 10-2 10-5 (4) (5) (4) 10-6 10-3 10-7 10-8 10-4 Fig. 4. 0 0.4 0.8 VF (V) 10-9 1.2 (5) 0 10 20 pulsed condition (1) Tj = 150 °C pulsed condition (1) Tj = 150 °C (2) Tj = 125 °C (2) Tj = 125 °C (3) Tj = 85 °C (3) Tj = 85 °C (4) Tj = 25 °C (4) Tj = 25 °C (5) Tj = −40 °C (5) Tj = −40 °C Forward current as a function of forward voltage; typical values Fig. 5. aaa-011757 35 Cd (pF) 30 30 40 Reverse current as a function of reverse voltage; typical values aaa-012522 0.6 (4) PF(AV) (W) 25 VR (V) (3) 0.4 (2) 20 (1) 15 0.2 10 5 0 Fig. 6. 0 10 20 30 VR (V) 0 40 0 0.2 f = 1 MHz; Tamb = 25 °C Tj = 150 °C Diode capacitance as a function of reverse voltage; typical values (1) δ = 0.1 (2) δ = 0.2 (3) δ = 0.5 (4) δ = 1 Fig. 7. PMEG4005AESF Product data sheet 0.6 IF(AV) (A) 0.8 Average forward power dissipation as a function of average forward current; typical values All information provided in this document is subject to legal disclaimers. 6 February 2015 0.4 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier aaa-011759 0.25 aaa-012524 0.8 PR(AV) (W) IF(AV) (A) 0.20 (1) 0.6 (1) (2) 0.15 (2) (3) 0.4 0.10 (3) (4) (4) 0.2 0.05 0 0 10 20 30 VR (V) 0 40 Tj = 125 °C Average reverse power dissipation as a function of reverse voltage; typical values aaa-012526 0.8 50 100 125 150 175 Tamb (°C) (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 9. Average forward current as a function of ambient temperature; typical values aaa-012527 (1) IF(AV) (A) 0.6 0.6 (2) (2) 0.4 0.4 (3) (3) (4) (4) 0.2 0.2 0 75 0.8 (1) IF(AV) (A) 25 FR4 PCB, standard footprint Tj = 150 °C (1) δ = 1 (2) δ = 0.9 (3) δ = 0.8 (4) δ = 0.5 Fig. 8. 0 0 25 50 75 100 125 0 150 175 Tamb (°C) 2 50 75 100 125 150 175 Tamb (°C) Tj = 150 °C cm each Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 10. Average forward current as a function of solder point temperature; typical values Product data sheet 25 Ceramic PCB, Al2O3, standard footprint FR4 PCB, mounting pad for anode and cathode 1 PMEG4005AESF 0 Fig. 11. Average forward current as a function of ambient temperature; typical values All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier aaa-012528 0.8 (1) IF(AV) (A) 0.6 (2) 0.4 (3) (4) 0.2 0 0 25 50 75 100 125 150 175 Tsp (°C) Tj = 150 °C (1) δ = 1; DC (2) δ = 0.5; f = 20 kHz (3) δ = 0.2; f = 20 kHz (4) δ = 0.1; f = 20 kHz Fig. 12. Average forward current as a function of solder point temperature; typical values 11. Test information IF IR(meas) time IR trr 006aad022 Fig. 13. Reverse recovery definition P tcy duty cycle δ = tp tcy tp t 006aac658 Fig. 14. Duty cycle definition PMEG4005AESF Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier The current ratings for the typical waveforms are calculated according to the equations: IF(AV) = IM × δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM × √δ with IRMS defined as RMS current. PMEG4005AESF Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier 12. Package outline Leadless ultra small package; 2 terminals; body 0.6 x 0.3 x 0.3 mm SOD962-2 L 1 2 b e1 A A1 E D (1) 0 0.5 mm scale Dimensions (mm are the original dimensions) Unit A max 0.32 nom min 0.28 mm A1 0.03 b D E e1 0.25 0.325 0.625 0.23 0.275 0.575 0.4 L 0.15 0.13 Note 1. The marking bar indicates the cathode. Outline version sod962-2_po References IEC JEDEC JEITA European projection Issue date 13-07-12 13-07-17 SOD962-2 Fig. 15. Package outline DSN0603-2 (SOD962-2) PMEG4005AESF Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier 13. Soldering Footprint information for reflow soldering of leadless ultra small package; 2 terminals SOD962-2 0.85 0.4 0.4 R0.025 (8×) 0.24 (2×) 0.14 (2×) 0.2 (2×) solder land solder land plus solder paste solder paste deposit solder resist Dimensions in mm sod962-2_fr Fig. 16. Reflow soldering footprint for DSN0603-2 (SOD962-2) PMEG4005AESF Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 16 PMEG4005AESF NXP Semiconductors 40 V, 0.5 A low VF MEGA Schottky barrier rectifier 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMEG4005AESF v.2 20150206 Product data sheet - PMEG4005AESF v.1 Modifications: • PMEG4005AESF v.1 20140507 - - PMEG4005AESF Product data sheet Product status changed Preliminary data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. 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Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................3 10 Characteristics ....................................................... 6 11 Test information ..................................................... 9 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 February 2015 PMEG4005AESF Product data sheet All information provided in this document is subject to legal disclaimers. 6 February 2015 © NXP Semiconductors N.V. 2015. All rights reserved 16 / 16