VISHAY SI1070X

Si1070X
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
ID (A)
Qg (Typ.)
0.099 at VGS = 4.5 V
1.2a
1.0
3.5
0.140 at VGS = 2.5 V
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
SC-89 (6-LEADS)
1
6
D
D
2
5
D
Marking Code
U
G
3
4
XX
YY
D
Lot Traceability
and Date Code
S
Part # Code
Top View
Ordering Information: Si1070X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipationa
L = 0.1 mH
TA = 25 °C
TA = 25 °C
TA = 70 °C
1b, c
A
6
IAS
9
EAS
4.01
mJ
IS
0.2b, c
A
0.236
PD
b, c
W
0.151b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
V
1.2b, c
ID
IDM
Pulsed Drain Current
Unit
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Symbol
t 5 s
Steady State
RthJA
Typical
Maximum
440
530
540
650
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 650 °C/W.
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
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1
Si1070X
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
30
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
V
24.5
ID = 250 µA
mV/°C
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.55
V
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
VDS = 30 V, VGS = 0 V
1
nA
VDS = 30 V, VGS = 0 V, TJ = 85 °C
10
µA
Gate-Source Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductance
RDS(on)
gfs
VDS =  5 V, VGS = 4.5 V
- 3.81
0.7
6
A
VGS = 4.5 V, ID = 1.2 A
0.082
0.099
VGS = 2.5 V, ID = 1.0 A
0.116
0.140
VDS = 15 V, ID = 1.2 A
5

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
385
VDS = 15 V, VGS = 0 V, f = 1 MHz
55
VDS = 15 V, VGS = 5 V, ID = 1.2 A
3.8
8.3
3.5
4.1
30
VDS = 15 V, VGS = 4.5 V, ID = 4.6 A
td(off)
1.1
nC
0.98
f = 1 MHz
td(on)
tr
pF
VDD = 15 V, RL = 15 
ID  1.0 A, VGEN = 4.5 V, Rg = 1 
tf

4.7
6.2
10
15
22
33
14
21
6
9
6
A
0.8
1.2
V
nC
ns
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
IS = 1.2 A
Body Diode Reverse Recovery Time
trr
19.4
29.5
Body Diode Reverse Recovery Charge
Qrr
18.43
27.5
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 3.8 A, dI/dt = 100 A/µs
16.4
ns
3
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
6
3.0
VGS = 5 V thru 3 V
2.4
VGS = 2.5 V
I D - Drain Current (A)
I D - Drain Current (A)
5
4
3
2
1.8
1.2
TC = 125 °C
VGS = 2 V
0.6
1
TC = 25 °C
TC = - 55 °C
VGS = 1.5 V
0
0.0
0.6
1.2
1.8
0.0
0.0
2.4
0.6
VDS - Drain-to-Source Voltage (V)
2.4
3.0
Transfer Characteristics Curves vs. Temp.
0.30
500
0.25
Ciss
C - Capacitance (pF)
400
0.20
VGS = 2.5 V
0.15
VGS = 4.5 V
0.10
300
200
Coss
100
0.05
0.00
Crss
0
0
1
2
3
4
5
6
0
6
I D - Drain Current (A)
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
5
1.8
VGS = 4.5 V
ID = 1.2 A
1.6
ID = 1.2 A
VDS = 15 V
3
VGS = 24 V
2
1
1.4
(Normalized)
4
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
1.8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
R DS(on) - On-Resistance (Ω)
1.2
VGS = 2.5 V
ID = 1 A
1.2
1.0
0.8
0
0
1
2
3
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
4
5
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10
0.24
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 1.2 A
1
TJ = 150 °C
0.1
TJ = 25 °C
0.01
0.18
TA = 125 °C
0.12
TA = 25 °C
0.06
0.00
0.001
0
0.2
0.4
0.6
0.8
1
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
RDS(on) vs. VGS vs. Temperature
5.0
1.5
1.4
ID = 250 µA
4.0
Power (W)
VGS(th) (V)
1.2
1.0
3.0
2.0
0.8
0.6
- 50
1.0
0.0
- 25
0
25
50
75
100
125
150
0.01
0.1
1
10
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
100
1000
10
100 µs
Limited by R DS(on)*
1 ms
I D - Drain Current (A)
1
10 ms
100 ms
0.1
1s
10 s
0.01
DC
BVDSS Limited
TA = 25 ° C
Single Pulse
0.001
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
Si1070X
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
10-1
0.2
0.1
0.05
10-2
Notes:
0.02
PDM
t1
t2
1. Duty Cycle, D =
10-3
t1
t2
2. Per Unit Base = RthJA = 540 ° C/W
Single Pulse
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10-4
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73893.
Document Number: 73893
S10-2542-Rev. D, 08-Nov-10
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Package Information
Vishay Siliconix
SC89: 6Ć LEADS (SOTĆ563F)
2
3
E1/2
D
4
ÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎ
ÎÎÎÎÎÎ
A
6
2
aaa
e1
5
C
2X
4
E/2
E
E1
3
2X
aaa
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
B
D
4
C
ÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎ
1
5
e
2
B
4
L1
L
A
2X
3
bbb
C
6X b
ccc
ÎÎ
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ÎÎ
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ÎÎÎÎÎÎ
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ÎÎÎÎÎÎ
M
C
A–B D
A1
A1
SEE DETAIL “A”
MILLIMETERS
Dim
Min
Max
NOTES:
2.
2
3.
3
Dimensions in millimeters.
Dimension D does not include mold flash, protrusions or gate
burrs. Mold flush, protrusions or gate burrs shall not exceed
0.15 mm per dimension E1 does not include interlead flash or
protrusion, interlead flash or protrusion shall not exceed
0.15 mm per side.
Note
Symbol
Tolerances
Of Form And
Position
A
0.56
0.60
aaa
0.10
A1
0.00
0.10
bbb
0.10
b
0.15
0.30
ccc
0.10
c
0.10
0.18
D
1.50
1.70
E
1.55
1.70
Dimensions D and E1 are determined at the outmost extremes
of the plastic body exclusive of mold flash, the bar burrs, gate
burrs and interlead flash, but including any mismatch between
the top and the bottom of the plastic body.
E1
1.20 BSC
e
0.50 BSC
44.
Datums A, B and D to be determined 0.10 mm from the lead tip.
e1
1.00 BSC
Terminal numbers are shown for reference only.
L
0.35 BSC
5.
5
L1
0.20 BSC
6.
6
These dimensions apply to the flat section of the lead between
0.08 mm and 0.15 mm from the lead tip.
Document Number: 71612
25-Jun-01
6
DETAIL “A”
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.
SECTION B-B
C
2, 3
2, 3
ECN: E-00499—Rev. B, 02-Jul-01
DWG: 5880
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead
0.051
0.012
0.020
(0.300)
(0.500)
0.019
(0.478)
0.031
(0.798)
0.069
(1.753)
(1.300)
0.051
(0.201)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
APPLICATION NOTE
Document Number: 72605
Revision: 21-Jan-08
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21
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
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any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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