Si1078X www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. ID (A) 0.142 at VGS = 10 V 1.02 0.154 at VGS = 4 V 0.98 0.195 at VGS = 2.5 V 0.87 Qg (TYP.) 1.5 D 6 • 100 % Rg tested • Typical ESD performance 1400 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SC-89 Single (6 leads) S 4 D 5 • TrenchFET® power MOSFET APPLICATIONS • Load switch for portable devices D 1 D Top View 2 D 3 G G Marking Code: D N-Channel MOSFET Ordering Information: Si1078X-T1-GE3 (lead (Pb)-free and halogen-free) S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 TA = 25 °C Continuous Drain Current (TJ = 150 °C) a TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 70 °C Operating Junction and Storage Temperature Range UNIT V 1.02 a, b ID 0.82 a, b IDM 6 IS 0.2 a, b A 0.24 a, b PD W 0.15 a, b TJ, Tstg -55 to +150 °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, c SYMBOL t5s Steady State RthJA TYPICAL MAXIMUM 440 530 540 650 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 650 °C/W. S16-1056-Rev. A, 30-May-16 Document Number: 68549 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1078X www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 30 - - - V 36.7 - - -2.8 - Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(on) Drain-Source On-State Resistance a Forward Transconductance ID = 250 μA VDS = VGS, ID = 250 μA 0.6 - 1.5 VDS = 0 V, VGS = ± 12 V - - ± 20 VDS = 0 V, VGS = ± 4.5 V - - ±1 VDS = 30 V, VGS = 0 V - - 1 10 VDS = 30 V, VGS = 0 V, TJ = 85 °C - - VDS = 5 V, VGS = 10 V 6 - - VGS = 10 V, ID = 1 A - 0.118 0.142 VGS = 4.5 V, ID = 1 A - 0.128 0.154 VGS = 2.5 V, ID = 0.5 A - 0.150 0.195 VDS = 15 V, ID = 1 A - 5.5 - - 110 - - 21 - - 11 - VDS = 15 V, VGS = 10 V, ID = 1 A - 3 6 - 1.5 3 VDS = 15 V, VGS = 4.5 V, ID = 1 A - 0.2 - - 0.42 - f = 1 MHz 1.04 5.2 5.6 - 8 16 - 25 38 - 23 35 tf - 23 35 td(on) - 5 10 - 23 35 - 10 20 - 35 53 RDS(on) gfs mV/°C V μA A S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = 15 V, VGS = 0 V, f = 1 MHz td(on) tr td(off) tr td(off) VDD = 15 V, RL = 18.9 ID 0.8 A, VGEN = 4.5 V, Rg = 1 VDD = 15 V, RL = 18.9 ID 0.8 A, VGEN = 10 V, Rg = 1 tf pF nC ns Drain-Source Body Diode Characteristics Pulse Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IS = 0.8 A IF = 2 A, dI/dt = 100 A/μs - - 6 - 0.75 1.2 A V - 12 20 ns - 4 8 nC - 7 - - 5 - ns Notes a. Pulse test; pulse width 100 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1056-Rev. A, 30-May-16 Document Number: 68549 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1078X www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 10000 10-3 TJ = 25 °C 0.003 0.002 100 2nd line IGSS - Gate Current (mA) 1000 0.004 1st line 2nd line 2nd line IGSS - Gate Current (mA) 0.005 10000 10-4 1000 10-5 TJ = 150 °C 1st line 2nd line 0.006 10-6 100 TJ = 25 °C 10-7 0.001 0 10-8 10 0 3 6 9 12 10 0 15 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage Axis Title Axis Title 6 10000 3 VGS = 10 V thru 3 V 3 VGS = 2 V 2 100 1 TC = 125 °C 1000 2 1.5 TC = 25 °C TC = -55 °C 1 100 0.5 0 10 0 0.5 1 1.5 0 10 0 2 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 2.5 Axis Title Axis Title 0.2 165 10000 10000 132 1000 0.14 VGS = 4.5 V 0.11 100 VGS = 10 V 0.08 Ciss 1000 99 1st line 2nd line VGS = 2.5 V 2nd line C - Capacitance (pF) 0.17 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line 1000 4 2nd line ID - Drain Current (A) 2.5 1st line 2nd line 2nd line ID - Drain Current (A) 5 66 100 33 Coss Crss 0.05 10 0 1.5 3 4.5 6 0 10 0 6 12 18 24 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance S16-1056-Rev. A, 30-May-16 30 Document Number: 68549 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1078X www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 1.6 8 VDS = 15 V 1000 6 VDS = 24 V 4 100 2 0 1.4 1000 1.2 VGS = 2.5 V, 0.5 A 1.0 100 0.8 VGS = 4.5 V, 1 A 0.6 10 0 0.8 1.6 2.4 3.2 10 -50 -25 0 25 75 100 125 150 TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature Axis Title Axis Title 0.25 1000 1st line 2nd line TJ = 25 °C 0.1 100 0.01 0.001 0.2 TJ = 150 °C 0.4 0.6 0.8 1.0 1000 0.15 0.1 TJ = 25 °C 100 0.05 0 10 0.2 10000 1st line 2nd line TJ = 150 °C 1 2nd line RDS(on) - On-Resistance (Ω) 10000 10 2nd line IS - Source Current (A) 50 Qg - Total Gate Charge (nC) 2nd line 100 0 10000 VGS = 10 V, Id=1 A 1st line 2nd line VDS = 8 V ID = 1 A 2nd line RDS(on) - On-Resistance (Normalized) 10000 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 10 10 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 5.0 10000 1.2 ID = 250 μA 4.0 0.8 Power (W) 1000 1st line 2nd line 2nd line VGS(th) (V) 1.0 3.0 2.0 100 0.6 1.0 0.4 10 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (°C) 2nd line Threshold Voltage S16-1056-Rev. A, 30-May-16 0 0.01 0.1 1 10 Time (s) 100 1000 Single Pulse Power, Junction-to-Ambient Document Number: 68549 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si1078X www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 10000 10 (1) Limited 1 by RDS(on) 100 μs 1000 1 ms 1st line 2nd line 2nd line ID - Drain Current (A) IDM limited 10 ms 0.1 100 ms 0.01 100 DC, 10s, 1s BVDSS limited TA = 25 °C Single pulse 0.001 10 0.1 (1) 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Notes: 0.1 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 540 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 4. Surface Mounted 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68549. S16-1056-Rev. A, 30-May-16 Document Number: 68549 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix SC-89 6-Leads (SOT-563F) E1/2 2 3 aaa D e1 4 C 2x 4 A B D 6 5 4 SECTION B-B C E/2 2 E E1 3 6 2x DETAIL “A” aaa C 1 5 2 2x 3 bbb C e B 6x b 4 ddd M C A–B D L1 A1 L A A1 SEE DETAIL “A” Notes 1. Dimensions in millimeters. 2. Dimension D does not include mold flash, protrusions or gate burrs. Mold flush, protrusions or gate burrs shall not exceed 0.15 mm per dimension E1 does not include interlead flash or protrusion, interlead flash or protrusion shall not exceed 0.15 mm per side. 3. Dimensions D and E1 are determined at the outmost extremes of the plastic body exclusive of mold flash, the bar burrs, gate burrs and interlead flash, but including any mismatch between the top and the bottom of the plastic body. 4. Datums A, B and D to be determined 0.10 mm from the lead tip. 5. Terminal numbers are shown for reference only. 6. These dimensions apply to the flat section of the lead between 0.08 mm and 0.15 mm from the lead tip. Revision: 11-Aug-14 DIM. MILLIMETERS MIN. NOM. A 0.56 0.58 MAX. 0.60 A1 0 0.02 0.10 b 0.15 0.22 0.30 0.18 c 0.10 0.14 D 1.50 1.60 1.70 E 1.50 1.60 1.70 1.25 E1 1.15 1.20 e 0.45 0.50 0.55 e1 0.95 1.00 1.05 L 0.25 0.35 0.50 L1 0.10 0.20 0.30 C14-0439-Rev. C, 11-Aug-14 DWG: 5880 Document Number: 71612 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-89: 6-Lead 0.051 0.012 0.020 (0.300) (0.500) 0.019 (0.478) 0.031 (0.798) 0.069 (1.753) (1.300) 0.051 (0.201) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72605 Revision: 21-Jan-08 www.vishay.com 21 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000