New Product Si5913DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.084 at VGS = - 10 V - 4f - 20 0.108 at VGS = - 4.5 V - 4f - 3.5 0.175 at VGS = - 2.5 V Qg (Typ.) 4 nC Vf (V) Diode Forward Voltage 20 0.5 at 1 A APPLICATIONS RoHS COMPLIANT • HDD - DC/DC Converter • Asynchronous Rectification SCHOTTKY PRODUCT SUMMARY VKA (V) • LITTLE FOOT® Plus Schottky Power MOSFET IF (A)a 2 1206-8 ChipFET S A D K 1 A K A K G S D Marking Code G DJ XX Lot Traceability and Date Code D Part # Code Bottom View P-Channel MOSFET Ordering Information: Si5913DC-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS Drain-Source Voltage (MOSFET) Limit Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ± 12 TC = 70 °C TA = 25 °C ID TA = 70 °C IDM Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C Maximum Power Dissipation (MOSFET) IFM Document Number: 68920 S-82298-Rev. A, 22-Sep-08 - 2.9b, c - 15 - 1.4b, c 2b 5 3.1 TA = 25 °C 1.7b, c PD 1.1b, c 3.1 TC = 70 °C 2.0 TA = 25 °C 1.3b, c TJ, Tstg A - 2.6 2.0 TA = 70 °C Operating Junction and Storage Temperature Range - 3.7b, c TC = 70 °C TC = 25 °C Soldering Recommendation (Peak Temperature)g, h - 4f TC = 25 °C TA = 70 °C Maximum Power Dissipation (Schottky) IS IF Average Forward Current (Schottky) Pulsed Forward Current (Schottky) V - 4f TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) Unit - 20 0.8b, c - 55 to 150 260 W °C www.vishay.com 1 New Product Si5913DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol RthJA RthJF RthJA RthJF t≤5s Steady State t≤5s Steady State Maximum Junction-to-Ambient (MOSFET)b, d Maximum Junction-to-Foot (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, e Maximum Junction-to-Foot (Drain) (Schottky) Typical 62 32 77 33 Maximum 74 40 95 40 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s d. Maximum under Steady State conditions is 115 °C/W. e. Maximum under Steady State conditions is 130 °C/W. f. Package Limited. g. See Solder Profile (http://www.vishay.com/doc?73257). The ChipFET is a leadless package. The end of the lead terminal is exposed copper(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed an is not required to ensure adequate bottom side soldering interconnection. h. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V - 20 mV/°C 3 - 0.6 - 1.5 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ 5 V, VGS = - 10 V VGS = - 10 V, ID = - 3.7 A - 15 µA A 0.070 0.084 VGS = - 4.5 V, ID = - 3.2 A 0.090 0.108 VGS = - 2.5 V, ID = - 2.5 A 0.140 0.175 VDS = - 10 V, ID = - 3.7 A 6 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time www.vishay.com 2 330 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 10 V, ID = - 3.7 A VDS = - 10 V, VGS = - 4.5 V, ID = - 3.7 A pF 8 12 4 6 0.8 VDD = - 10 V, RL = 3.4 Ω ID ≅ - 2.9 A, VGEN = - 10 V, Rg = 1 Ω 1.2 6 12 3 6 10 20 16 24 tf 8 15 td(on) 18 27 td(off) tr td(off) tf nC 1.4 f = 1 MHz td(on) tr 80 57 VDD = - 10 V, RL = 3.4 Ω ID ≅ - 2.9 A, VGEN = - 4.5 V, Rg = 1 Ω 40 60 18 27 10 15 Ω ns Document Number: 68920 S-82298-Rev. A, 22-Sep-08 New Product Si5913DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions IS TC = 25 °C Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 1.2 - 15 IS = - 2.9 A, VGS = 0 V IF = - 2.9 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.75 - 1.2 V 23 35 ns 14 21 nC 11 ns 12 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Forward Voltage Drop Maximum Reverse Leakage Current Junction Capacitance Symbol VF Irm CT Test Conditions IF = 1 A Min. Typ. Max. 0.42 0.50 IF = 1 A, TJ = 125 °C 0.36 0.43 Vr = 5 V 0.015 0.08 Vr = 5 V, TJ = 85 °C 0.50 5.00 Vr = 20 V 0.02 0.10 Vr = 20 V, TJ = 85 °C 0.7 7.00 Vr = 20 V, TJ = 125 °C 5 50 Vr = 10 V 60 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 68920 S-82298-Rev. A, 22-Sep-08 www.vishay.com 3 New Product Si5913DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 15 2.0 VGS = 10 thru 4 V 1.6 ID - Drain Current (A) ID - Drain Current (A) 12 VGS = 3 V 9 6 3 TC = - 55 °C 1.2 0.8 TC = 25 °C 0.4 TC = 125 °C VGS = 2 V 0 0 1 2 3 4 0.0 0.0 5 0.4 VDS - Drain-to-Source Voltage (V) 0.8 1.2 1.6 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.20 600 500 0.16 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) VGS = 2.5 V 0.12 VGS = 4.5 V 0.08 VGS = 10 V 0.04 Ciss 400 300 200 Coss 100 Crss 0 0.00 0 3 6 9 12 0 15 ID - Drain Current (A) 4 8 16 20 VDS - Drain-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.5 10 ID = 3.7 A VGS = 10 V, ID = 3.7 A 8 1.3 VDS = 10 V R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 12 6 VDS = 16 V 4 2 0 0.0 1.5 3.0 4.5 6.0 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 4 7.5 9.0 VGS = 4.5 V, ID = 3.2 A 1.1 0.9 0.7 - 50 - 25 0 25 50 75 100 125 150 TJ -- Junction Temperature (°C) On-Resistance vs. Junction Temperature Document Number: 68920 S-82298-Rev. A, 22-Sep-08 New Product Si5913DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 0.20 10 ID = 3.7 A R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.16 TJ = 150 °C TJ = 25 °C 1 0.1 0.0 0.12 TJ = 125 °C 0.08 TJ = 25 °C 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 3 VSD - Source-to-Drain Voltage (V) 6 9 12 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 30 1.3 25 1.1 Power (W) V GS(th) (V) 20 ID = 250 µA 0.9 15 10 0.7 5 0.5 - 50 - 25 0 25 50 75 100 125 0 10-4 150 10-3 10-2 10-1 1 10 Time (s) TJ - Temperature (°C) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 ms 1 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 68920 S-82298-Rev. A, 22-Sep-08 www.vishay.com 5 New Product Si5913DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 4.0 6 3.2 4 Power (W) ID - Drain Current (A) 5 Package Limited 3 2.4 1.6 2 0.8 1 0.0 0 0 25 50 75 100 125 0 150 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Foot 150 1.5 Power (W) 1.2 0.9 0.6 0.3 0.0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 68920 S-82298-Rev. A, 22-Sep-08 New Product Si5913DC Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 68920 S-82298-Rev. A, 22-Sep-08 www.vishay.com 7 New Product Si5913DC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 10-1 10-3 I S - Source Current (A) I R - Reverse Current (mA) 10-2 VR = 20 V VR = 15 V 10-4 10-5 VR = 10 V 10-6 1 TJ = 150 °C TJ = 25 °C 0.1 0.01 10-7 10-8 - 50 0.001 - 25 0 25 50 75 100 125 150 0.0 0.2 0.6 0.8 1.0 Forward Diode Voltage Reverse Current vs. Junction Temperature 250 20 200 16 Power (W) C - Capacitance (pF) 0.4 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) 150 100 50 12 8 4 0 0 www.vishay.com 8 4 8 12 16 20 0 10-4 10-3 10-2 10-1 1 10 VDS - Drain-to-Source Voltage (V) Time (s) Capacitance Single Pulse Power, Junction-to-Ambient 100 Document Number: 68920 S-82298-Rev. A, 22-Sep-08 New Product Si5913DC Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 105 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68920. Document Number: 68920 S-82298-Rev. A, 22-Sep-08 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1