Phototransistors PNZ126S Silicon NPN Phototransistor Unit : mm ø3.0±0.2 4.1±0.3 2.0±0.2 For optical control systems Features High sensitivity Color indication ICE(L) rank , 12.5 min. Good collector photo current linearity with respect to optical power input Fast response : tr = 2.5 µs (typ.) ø0.3±0.05 ø0.45±0.05 Small size (ø 3) ceramic package 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V Collector current IC 20 mA Collector power dissipation PC 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 2 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Collector photo current *1 *2 ICE(L)*3 Conditions min VCE = 10V VCE = 10V, L = 1000 lx*1 typ max 1 100 nA 2560 µA 1050 Unit Peak sensitivity wavelength λP VCE = 10V 800 nm Acceptance half angle θ Measured from the optical axis to the half power point 30 deg. 2.5 µs 3.5 µs Rise time tr*2 Fall time tf*2 VCC = 10V, ICE(L) = 1mA, RL = 100Ω Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,,,, ,, 50Ω *3 I CE(L) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) Classifications Class ICE(L) (µA) Color indication Q R S T U 1050 to1350 1260 to 1580 1480 to 1860 1730 to 2180 2030 to 2560 Brown Yellow Pink Black Red 1 Phototransistors PNZ126S PC — Ta ICE(L) — VCE VCE = 10V Ta = 25˚C T = 2856K 50 40 ICE(L) (µA) ICE(L) (mA) Ta = 25˚C T = 2856K L =2000 lx 3 1800 lx 30 20 10 0 20 40 60 Ambient temperature 80 1400 lx 2 1200 lx 1000 lx 800 lx 1 0 100 Ta (˚C ) 600 lx 400 lx 200 lx 100 lx 0 10 ICEO — Ta 40 Ambient temperature 60 80 S (%) 10 2 10 1 Ta (˚C ) 10˚ 0 20 40 60 Ambient temperature 60 40 80 0 200 100 20˚ 10 3 100 400 600 800 1000 1200 Wavelength λ (nm) Ta (˚C ) tr — ICE(L) Directivity characteristics 0˚ 80 20 10 –2 – 20 100 10 4 Ta = 25˚C 10 –1 20 10 3 L (lx) Spectral sensitivity characteristics Relative sensitivity ICEO (nA) Dark current 500 lx 10 2 100 VCE = 10V 1000 lx 0 10 Illuminance 10 3 10 2 – 20 10 2 1 10 30 L = 1500 lx 10 3 10 3 VCE (V) 10 4 VCE = 10V T = 2856K ICE(L) (µA) 20 Collector to emitter voltage ICE(L) — Ta 10 4 Collector photo current 1600 lx 0 – 20 Collector photo current ICE(L) — L 10 4 4 Collector photo current Collector power dissipation PC (mW) 60 tf — ICE(L) 10 3 VCC = 10V Ta = 25˚C VCC = 10V Ta = 25˚C 40 30 20 50˚ 60˚ 70˚ tf (µs) 40˚ 10 2 10 Fall time 50 10 2 tr (µs) 60 30˚ Rise time 70 Relative sensitivity S (%) 90 80 RL = 1kΩ 500Ω RL = 1kΩ 500Ω 100Ω 100Ω 1 10 1 80˚ 90˚ 10 –1 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –1 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA)