Phototransistors PNZ163NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max. 1.1 0.8 Unit : mm For optical control systems Features High sensitivity 3.0±0.3 ø1.1 R0.5 1.95±0.25 1.4±0.2 0.9 0.5 Fast response : tr = 4 µs (typ.) 12 min. Not soldered 2.15 max. Adoption of visible light cutoff resin Ultraminiature, thin side-view type package 2-0.5±0.15 2 2.54 0.3±0.15 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Collector current IC 20 mA Collector power dissipation PC 50 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Collector 2: Emitter Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Sensitivity to infrared emitters Peak sensitivity wavelength Acceptance half angle *2 min typ VCE = 10V, H = 15µW/cm2 6 max Unit 0.2 µA 40 µA λP VCE = 10V 850 nm θ Measured from the optical axis to the half power point 25 deg. Rise time tr*2 VCC = 10V, ICE(L) = 5mA 4 µs Fall time tf*2 RL = 100Ω 4 Collector saturation voltage *1 SIR *1 Conditions VCE = 10V VCE(sat) ICE(L) = 3µA, H = 15µW/cm2 µs 0.5 V Measurements were made using infrared light (λ = 940 nm) as a light source. Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) RL ,,,, ,, 50Ω 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 Phototransistor PNZ163NC PC — Ta ICE(L) — VCE 30 20 10 0 20 40 60 Ambient temperature 80 2.0 1.5 500 lx 1.0 0.5 0 100 L = 1000 lx Ta (˚C ) 100 lx 0 4 8 1 10 –1 40 Ambient temperature 60 80 50 40 30 20 30˚ S (%) 40 80 80 60 40 0 600 120 50˚ 60˚ VCC = 10V Ta = 25˚C 900 1000 1100 1200 VCC = 10V Ta = 25˚C 10 4 10 3 10 2 RL = 1kΩ 10 500Ω 100Ω 70˚ 80˚ 800 tf — ICE(L) tf (µs) 40˚ 700 Wavelength λ (nm) Ta (˚C ) 10 3 tr (µs) 60 VCE = 10V Ta = 25˚C tr — ICE(L) 20˚ Rise time 70 0 10 4 Relative sensitivity S (%) 90 80 10 3 L (lx) 20 Ambient temperature 100 10 2 10 Illuminance Spectral sensitivity characteristics 1 10 –1 – 40 100 1 100 10 Ta (˚C ) 10˚ 10 –1 VCE (V) VCE = 10V T = 2856K Directivity characteristics 0˚ 1 10 –2 24 Relative sensitivity ICE(L) (mA) Collector photo current ICEO (nA) Dark current 10 20 20 VCE = 10V Ta = 25˚C T = 2856K 10 ICE(L) — Ta 10 2 VCE = 10V 0 16 Collector to emitter voltage ICEO — Ta 10 –2 – 20 12 Fall time 0 – 20 2.5 ICE(L) (mA) 40 Ta = 25˚C T = 2856K Collector photo current ICE(L) (mA) 50 10 2 ICE(L) — L 10 2 3.0 Collector photo current Collector power dissipation PC (mW) 60 10 2 RL = 1kΩ 10 500Ω 100Ω 1 1 90˚ 10 –1 10 –2 10 –1 1 Collector photo current 2 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA)