Darlington Phototransistors PNA2602M Darlington Phototransistor Unit : mm 4.5±0.3 4.8±0.3 2.4 2.4 ø3.5±0.2 Features Not soldered For optical control systems 4.2±0.3 2.3 1.9 2-1.12 2-0.45±0.15 1.2 14.5 2.95 1.0 Darlington output, high sensitivity 36.6±0.5 Easy to combine light emission and photodetection on same printed circuit board 2-0.4±0.15 2-0.6±0.15 2-0.45±0.15 2.2±0.2 Small size, thin side-view type package Long lead and visible light cutoff design with PN205 1 2 2.54 R1.75 Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit Collector to emitter voltage VCEO 20 V Emitter to collector voltage VECO 5 V IC 30 mA Collector current Collector power dissipation PC 100 mW Operating ambient temperature Topr –25 to +80 ˚C Storage temperature Tstg –30 to +100 ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Dark current ICEO Sensitivity to infrared emitters SIR Peak sensitivity wavelength Acceptance half angle *1 Collector saturation voltage VCE = 10V, H = 3.75 λP VCE = 10V θ tr, tf*2 Response time Conditions VCE(sat) min typ VCE = 10V *1 µW/cm2 0.1 max Unit 0.5 µA 3.0 mA 850 nm Measured from the optical axis to the half power point 35 deg. VCC = 10V, IC = 1mA, RL = 100Ω 150 µs IC = 100µA, H = 3.75 µW/cm2 1.5 V *1 Measurements were made using infrared light (λ = 940 nm) as a light source. *2 Switching time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT RL ,, ,, 50Ω (Output pulse) 90% 10% td tr tf td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) 1 PNA2602M Darlington Phototransistors PC — Ta ICE(L) — VCE 80 12 10 2 60 40 20 Collector photo current 30 lx 8 20 lx 4 10 lx 10 1 5 lx 2 lx 0 20 40 Ambient temperature 60 80 0 100 Ta (˚C ) 0 4 8 12 16 20 Collector to emitter voltage ICE(L) — Ta 10 10 –1 24 Spectral sensitivity characteristics S (%) 80 1 60 Relative sensitivity ICEO (µA) 10 –1 10 –1 40 10 –2 0 40 Ambient temperature 80 20 10 –3 – 20 120 Ta (˚C ) 0 10˚ 20 40 60 Ambient temperature 80 0 600 100 700 800 20˚ 900 1000 1100 1200 Wavelength λ (nm) Ta (˚C ) tr — ICE(L) Directivity characteristics 0˚ VCE = 10V Ta = 25˚C VCE = 10V 1 10 3 L (lx) 100 10 10 –2 – 40 10 2 10 Illuminance ICEO — Ta VCE = 10V T = 2856K 1 VCE (V) 10 2 Dark current ICE(L) (mA) VCE = 10V Ta = 25˚C T = 2856K Ta = 25˚C T = 2856K PC = 100mW L = 50 lx ICE(L) (mA) ICE(L) (mA) 100 0 – 20 Collector photo current ICE(L) — L 10 3 16 Collector photo current Collector power dissipation PC (mW) 120 tf — ICE(L) 100 40 30 20 50˚ 60˚ 70˚ 10 3 RL = 1kΩ 500Ω 10 2 Sig. OUT RL tr td 90% 10% tf 10 3 RL = 1kΩ 500Ω 100Ω 10 2 100Ω 80˚ 90˚ 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 2 tf Sig. OUT 50Ω , tr td VCC tf (µs) 40˚ Sig.IN 90% 10% Fall time 50 ,, , 60 Sig. OUT RL tr (µs) 70 VCC Sig. OUT 50Ω 30˚ Rise time 80 Relative sensitivity S (%) Sig.IN 90 1 10 ICE(L) (mA) 10 10 –2 VCC = 10V Ta = 25˚C 10 –1 Collector photo current 1 10 ICE(L) (mA)