TVS Diode Transient Voltage Suppressor Diodes ESD5V3S1B-02LS Bi-directional Symmetrical Medium Capacitance ESD / Transient Protection Diode ESD5V3S1B-02LS Data Sheet Revision 1.0, 2011-04-08 Final Industrial and Multi-Market Edition 2011-04-08 Published by Infineon Technologies AG 81726 Munich, Germany © 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD5V3S1B-02LS Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, 2011-04-08 Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 3 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 1.1 1.2 Bi-directional Symmetrical Medium Capacitance ESD / Transient Protection Diode . . . . . . . . . 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 3.1 3.2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Electrical Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Typical Characteristics at TA=25°C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 Ordering Information Scheme (Examples) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 6.1 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 PG-TSSLP-2-1 (mm) [2] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Predefined Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Final Data Sheet 4 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS List of Figures List of Figures Figure 2-1 Figure 3-1 Figure 3-2 Figure 3-3 Figure 3-4 Figure 3-5 Figure 4-1 Figure 5-1 Figure 6-1 Figure 6-2 Figure 6-3 Figure 6-4 Pin Configuration and Schematic Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Definitions of electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Reverse current: IR = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Reverse current: IR = f(TA), VR = 5.3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Line capacitance: CL = f(VR), f = 1MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Clamping voltage (TLP): ITLP = f(VTLP) [1] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Single line, bi-directional ESD / Transient protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 PG-TSSLP-2-1: Package overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 PG-TSSLP-2-1: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 PG-TSSLP-2-1: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 PG-TSSLP-2-1: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 5 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS List of Tables List of Tables Table 2-1 Table 3-1 Table 3-2 Table 3-3 Table 3-4 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Ratings at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . Final Data Sheet 6 7 8 8 9 9 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Bi-directional Symmetrical Medium Capacitance ESD / Transient Protection 1 Bi-directional Symmetrical Medium Capacitance ESD / Transient Protection Diode 1.1 Features • • • • • ESD / transient protection of signal lines in low voltage applications according to: – IEC61000-4-2 (ESD): ±20 kV (contact) – IEC61000-4-4 (EFT): 40 A / 2 kV (5/50 ns) – IEC61000-4-5 (surge): 5 A (8/20 μs) Bi-directional, symmetrical working voltage up to VRWM = ±5.3 V Low clamping voltage, low dynamic resistance RDYN = 0.5 Ω (typical) Smallest form factor: 0.62 x 0.32 x 0.31 mm3 Pb-free (RoHS compliant) and halogen free package 1.2 • • • • Application Examples Audio line protection Mobile communication, Consumer products (STB, MP3, DVD, DSC...) LCD displays, keypads, trackball protection, camera Notebooks and desktop computers, peripherals 2 Product Description Pin 1 marking (lasered) Pin 1 Pin 1 Pin 2 Pin 2 TSSLP -2 a) Pin configuration b) Schematic diagram P G-TS S LP-2_Dual_Diode_S erie_P inConf_and_S c hematic Diag. v s d Figure 2-1 Pin Configuration and Schematic Diagram Table 2-1 Ordering Information Type Package Configuration Marking code ESD5V3S1B-02LS PG-TSSLP-2-1 1 line, bi-directional H Final Data Sheet 7 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Characteristics 3 Characteristics Table 3-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. VESD – – 20 kV IPP – – 5 A Operating temperature range TOP -40 – 125 °C Storage temperature 1) VESD according to IEC61000-4-2 2) IPP according to IEC61000-4-5 Tstg -55 – 150 °C ESD contact discharge 1) Peak pulse current (tp = 8/20 μs) 2) Electrical Characteristics at TA = 25 °C, unless otherwise specified 3.1 RDYN Dynamic resistance VBR Breakdown voltage I VRWM Reverse working voltage maximum VCL Clamping voltage IPP Peak pulse current IPP RDYN IBR VCL VBR IRWM VRWM V RWM I RWM VBR VCL V IBR RDYN IPP Diode_Charac teris tic _Curv e_B -i direc tional .v s d Figure 3-1 Definitions of electrical characteristics Table 3-2 DC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Reverse working voltage VRWM -5.3 – 5.3 V Breakdown voltage VBR 6 – – V IR = 1 mA Reverse current IR – – 0.1 µA VR = 3.3 V Final Data Sheet 8 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Characteristics Table 3-3 RF Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Line capacitance Table 3-4 CL Values Min. Typ. Max. – 17 20 Unit Note / Test Condition pF VR = 0 V, f = 1 MHz Unit Note / Test Condition ESD Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Reverse clamping voltage1) [2] VCL 1) Dynamic resistance [2] RDYN Values Min. Typ. Max. – 18 – V IPP = 16 A – 26 – V IPP = 30 A – 0.5 – Ω 1) Please refer to Application Note AN210. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP charactertistics between IPP1 = 10 A and IPP2 = 40 A. Typical Characteristics at TA=25°C, unless otherwise specified 3.2 10 -6 10 -7 IR [A] 10-8 10 -9 10 -10 10 -11 10-12 0 1 2 3 VR [V] 4 5 6 Figure 3-2 Reverse current: IR = f(VR) Final Data Sheet 9 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Characteristics -6 10 -7 10 -8 IR [A] 10 10-9 -50 -25 0 25 50 TA [°C] 75 100 125 150 Figure 3-3 Reverse current: IR = f(TA), VR = 5.3 V 20 19 18 CL [pF] 17 16 15 14 13 12 11 10 0 1 2 3 VR [V] 4 5 6 Figure 3-4 Line capacitance: CL = f(VR), f = 1MHz Final Data Sheet 10 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Application Information 50 ITLP [A] 30 ESD5V3S1B-02LS RDYN 25 40 20 30 15 RDYN=0.5Ω 20 10 10 5 0 0 5 10 15 20 25 VTLP [V] 30 35 40 Equivalent VIEC [kV] 60 0 Figure 3-5 Clamping voltage (TLP): ITLP = f(VTLP) [1] Application Information Connector 4 Protected signal line ESD I/O sensitive device 1 2 The protection diode should be placed very close to the location where the ESD or other transients can occur to keep loops and inductances as small as possible . Pin 2 (or pin 1) should be connected directly to a ground plane on the board . A pplic ation_E S D5V3S 1B-02LS .v s d Figure 4-1 Single line, bi-directional ESD / Transient protection Final Data Sheet 11 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Ordering Information Scheme (Examples) 5 ESD Ordering Information Scheme (Examples) 0P1 RF - XX YY Package XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP For Radio Frequency Applications Line Capacitance CL in pF: (i.e.: 0P1 = 0.1pF) ESD 5V3 U n U - XX YY Package or Application XX = Pin number (i.e.: 02 = 2 pins; 03 = 3 pins) YY = Package family: LS = TSSLP LRH = TSLP S = SOT363 U = SC74 XX = Application family: LC = Low Clamp HDMI Uni- / Bi-directional or Rail to Rail protection Number of protected lines (i.e.: 1 = 1 line; 4 = 4 lines) Capacitance: Standard (>10pF), Low (<10pF), Ultra-low (<1pF) Maximum working voltage VRWM in V: (i.e.: 5V3 = 5.3V) Figure 5-1 Ordering information scheme Final Data Sheet 12 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Package Information 6 Package Information 6.1 PG-TSSLP-2-1 (mm) [2] Top view Bottom view 0.31 +0.01 -0.02 0.62 ±0.035 2 1 0.2 ±0.025 1) 0.355 ±0.025 0.32 ±0.035 0.26 ±0.025 1) Cathode marking 1) Dimension applies to plated terminal TSSLP-2-1,-2-PO V05 Figure 6-1 PG-TSSLP-2-1: Package overview 0.19 0.24 Solder mask 0.19 0.57 0.14 0.62 Copper 0.19 0.27 0.24 0.32 Stencil apertures TSSLP-2-1,-2-FP V02 Figure 6-2 PG-TSSLP-2-1: Footprint a Tape type Ex Ey Punched Tape 0.43 0.73 Embossed Tape 0.37 0.67 8 Ey Cathode marking g 0.35 4 Deliveries can be both tape types (no selection possible). Specification allows identical processing (pick & place) by users. Ex TSSLP-2-1,-2-TP V03 Figure 6-3 PG-TSSLP-2-1: Packing Figure 6-4 PG-TSSLP-2-1: Marking (example) Final Data Sheet 13 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology [2] Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages Final Data Sheet 14 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Terminology Terminology CL Line capacitance DSC Digital Still Camera DVD Digital Versatile Disc EFT Electrical Fast Transient ESD Electrostatic Discharge IPP Peak pulse current IR Reverse current LCD Liquid Crystal Display MP3 Audio player device based on MPEG Audio Layer III PPK Peak pulse power RDYN Dynamic resistance RoHs Restriction of Hazardous Substance directive STB Set-Top-Box TA Ambient temperature TOP Operation temperature tp Pulse duration Tstg Storage temperature VBR Breakdown voltage VCL Reverse clamping voltage VESD Electrostatic discharge voltage VR Reverse voltage VRWM Reverse working voltage maximum Final Data Sheet 15 Revision 1.0, 2011-04-08 ESD5V3S1B-02LS Predefined Names Predefined Names Name Initial Cross-Reference X-GOLD X-GOLD XMM XMM ----------------------------------------------------------------------------Definition of “Predefined Names” Frequently used expressions, such as component names, file names, tools releases, version numbers, proprietary variables and software links, can be used in a similar way as user variables. However, they must be listed in a special table and not in the standard file “Variables”. Correct Usage Steps: 1. Insert all expressions into the left column of the above table. 2. Insert an initial Cross-Reference into the right column of the same row. The initial Cross-Reference is necessary to ensure that a single ID is used in all your documents using the “Predefined_Names.fm” file (Example: X-GOLD has the unique ID = CHDGHJGH). 3. Insert a Cross-Reference (Element “CrossReference”) into your document to the Element Identifier of the “Predefined_Names.fm” file. Set the output format of the Cross-Reference to “Variable” (example: X-GOLD). Notes 1. All documents in a project (such as XMM) and within a book should use the same file “Predefined Names”. This allows copying content between different documents. For this reason, local versions of “Predefined Names” must not be produced. 2. New definitions must be inserted in a new row. Never change existing definitions, as they might be used in other documents. 3. This file does not need to be included in your book, but it must be in the fm sub-folder of your document. 4. You can sort the above table with FrameMaker only if the initial cross-reference in the right column has been properly inserted. Otherwise, the table may only be sorted by hand, as the cross-references to your document would get lost. Final Data Sheet 16 Revision 1.0, 2011-04-08 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG