Si4286DY Datasheet

Si4286DY
Vishay Siliconix
Dual N-Channel 40 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a
0.0325 at VGS = 10 V
7
0.040 at VGS = 4.5 V
6.3
VDS (V)
40
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
3.3 nC
APPLICATIONS
• DC/DC Converter
- External HDD
- Notebook System Power
• LCD Display Backlighting
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
5
D2
G2
4
D1
D2
G1
G2
Top View
Ordering Information: Si4286DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
7
TC = 70 °C
5.6
ID
TA = 25 °C
4.6b, c
Pulsed Drain Current (t = 300 µs)
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
IDM
TC = 25 °C
2.4
1.6b, c
IAS
8
EAS
3.2
TC = 25 °C
Maximum Power Dissipation
mJ
2.9
TC = 70 °C
1.86
PD
TA = 25 °C
W
1.9b, c
1.23b, c
TA = 70 °C
Operating Junction and Storage Temperature Range
A
20
IS
TA = 25 °C
L = 0.1 mH
V
5.7b, c
TA = 70 °C
Continuous Source-Drain Diode Current
Unit
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t  10 s
RthJA
55
65
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
35
43
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W.
Document Number: 67599
S11-1151-Rev. A, 13-Jun-11
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1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4286DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0, ID = 250 µA
40
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS , ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
V
51
mV/°C
-5
1.0
2.5
V
± 100
nA
VDS = 40 V, VGS = 0 V
1
VDS = 40 V, VGS = 0 V, TJ = 55 °C
10
VDS 5 V, VGS = 10 V
10
µA
A
VGS 10 V, ID = 8 A
0.027
0.0325
VGS 4.5 V, ID = 5 A
0.033
0.040
VDS = 10 V, ID = 8 A
27

S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
375
VDS = 20 V, VGS = 0 V, f = 1 MHz
67
pF
29
VDS = 20 V, VGS = 10 V, ID = 8 A
VDS = 20 V, VGS = 4.5 V, ID = 8 A
6.8
10.5
3.3
5
1
1.1
f = 1 MHz
0.8
3.7
7.4
td(on)
33
60
tr
60
110
td(off)
VDD = 20 V, RL = 2.5 
ID  8 A, VGEN = 4.5 V, Rg = 1 
17
34
tf
22
40
td(on)
9
18
11
22
10
20
7
14
tr
td(off)
nC
VDD = 20 V, RL = 2.5 
ID  8 A, VGEN = 10 V, Rg = 1 
tf

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
2.4
20
IS = 3 A, VGS = 0
0.8
1.2
A
V
Body Diode Reverse Recovery Time
trr
13
26
ns
Body Diode Reverse Recovery Charge
Qrr
6
12
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
7
6
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 67599
S11-1151-Rev. A, 13-Jun-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4286DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
3.0
VGS = 10 V thru 4 V
2.4
ID - Drain Current (A)
ID - Drain Current (A)
16
12
VGS = 3 V
8
4
1.8
TC = 25 °C
1.2
0.6
TC = - 55 °C
TC = 125 °C
0
0.0
1.0
2.0
3.0
4.0
0
0.0
5.0
1.0
2.0
4.0
5.0
Transfer Characteristics
0.050
500
0.044
400
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Output Characteristics
0.038
VGS = 4.5 V
0.032
0.026
3.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Ciss
300
200
Coss
100
VGS = 10 V
Crss
0.020
0
0
5
10
15
20
25
0
30
8
16
On-Resistance vs. Drain Current
32
40
Capacitance
2.0
10
RDS(on) - On-Resistance (Normalized)
ID = 8 A
VGS - Gate-to-Source Voltage (V)
24
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
8
VDS = 20 V
6
VDS = 10 V
VDS = 30 V
4
2
0
0.0
1.5
3.0
4.5
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 67599
S11-1151-Rev. A, 13-Jun-11
6.0
7.5
ID = 8 A
1.7
VGS = 10 V
1.4
VGS = 4.5 V
1.1
0.8
0.5
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4286DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.10
10
0.08
TJ = 150 °C
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 8 A
TJ = 25 °C
1
0.1
0.01
0.001
0.0
0.06
TJ = 125 °C
0.04
TJ = 25 °C
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
6
8
10
On-Resistance vs. Gate-to-Source Voltage
80
0.4
0.2
64
0
Power (W)
VGS(th) - Variance (V)
4
VGS - Gate-to-Source Voltage (V)
- 0.2
ID = 250 μA
48
32
- 0.4
ID = 1 mA
- 0.6
- 0.8
- 50
- 25
0
25
50
75
16
100
125
0
0.001
150
0.01
0.1
1
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power
10
100
IDM Limited
ID - Drain Current (A)
10
ID Limited
1 ms
Limited by RDS(on)*
10 ms
1
100 ms
0.1
TC = 25 °C
Single Pulse
0.01
0.1
BVDSS Limited
1
1s
10 s
DC
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 67599
S11-1151-Rev. A, 13-Jun-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4286DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
8
ID - Drain Current (A)
6
5
3
2
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
3.5
1.25
2.8
1.00
2.1
0.75
Power (W)
Power (W)
Current Derating*
1.4
0.50
0.25
0.7
0.00
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67599
S11-1151-Rev. A, 13-Jun-11
www.vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Si4286DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 120 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67599.
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Document Number: 67599
S11-1151-Rev. A, 13-Jun-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
5
E
1
3
2
H
4
S
h x 45
D
C
0.25 mm (Gage Plane)
A
e
B
All Leads
q
A1
L
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
B
0.35
0.51
0.014
0.020
C
0.19
0.25
0.0075
0.010
D
4.80
5.00
0.189
0.196
E
3.80
4.00
0.150
e
0.101 mm
1.27 BSC
0.157
0.050 BSC
H
5.80
6.20
0.228
0.244
h
0.25
0.50
0.010
0.020
L
0.50
0.93
0.020
0.037
q
0°
8°
0°
8°
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
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Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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Document Number: 72606
Revision: 21-Jan-08
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requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
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Revision: 02-Oct-12
1
Document Number: 91000