Si4286DY Vishay Siliconix Dual N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0325 at VGS = 10 V 7 0.040 at VGS = 4.5 V 6.3 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 3.3 nC APPLICATIONS • DC/DC Converter - External HDD - Notebook System Power • LCD Display Backlighting SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 5 D2 G2 4 D1 D2 G1 G2 Top View Ordering Information: Si4286DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C 7 TC = 70 °C 5.6 ID TA = 25 °C 4.6b, c Pulsed Drain Current (t = 300 µs) Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C 2.4 1.6b, c IAS 8 EAS 3.2 TC = 25 °C Maximum Power Dissipation mJ 2.9 TC = 70 °C 1.86 PD TA = 25 °C W 1.9b, c 1.23b, c TA = 70 °C Operating Junction and Storage Temperature Range A 20 IS TA = 25 °C L = 0.1 mH V 5.7b, c TA = 70 °C Continuous Source-Drain Diode Current Unit TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambientb, d t 10 s RthJA 55 65 Maximum Junction-to-Foot (Drain) Steady State RthJF 35 43 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 120 °C/W. Document Number: 67599 S11-1151-Rev. A, 13-Jun-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4286DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS , ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 51 mV/°C -5 1.0 2.5 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 10 µA A VGS 10 V, ID = 8 A 0.027 0.0325 VGS 4.5 V, ID = 5 A 0.033 0.040 VDS = 10 V, ID = 8 A 27 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 375 VDS = 20 V, VGS = 0 V, f = 1 MHz 67 pF 29 VDS = 20 V, VGS = 10 V, ID = 8 A VDS = 20 V, VGS = 4.5 V, ID = 8 A 6.8 10.5 3.3 5 1 1.1 f = 1 MHz 0.8 3.7 7.4 td(on) 33 60 tr 60 110 td(off) VDD = 20 V, RL = 2.5 ID 8 A, VGEN = 4.5 V, Rg = 1 17 34 tf 22 40 td(on) 9 18 11 22 10 20 7 14 tr td(off) nC VDD = 20 V, RL = 2.5 ID 8 A, VGEN = 10 V, Rg = 1 tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD TC = 25 °C 2.4 20 IS = 3 A, VGS = 0 0.8 1.2 A V Body Diode Reverse Recovery Time trr 13 26 ns Body Diode Reverse Recovery Charge Qrr 6 12 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 7 6 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67599 S11-1151-Rev. A, 13-Jun-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4286DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 20 3.0 VGS = 10 V thru 4 V 2.4 ID - Drain Current (A) ID - Drain Current (A) 16 12 VGS = 3 V 8 4 1.8 TC = 25 °C 1.2 0.6 TC = - 55 °C TC = 125 °C 0 0.0 1.0 2.0 3.0 4.0 0 0.0 5.0 1.0 2.0 4.0 5.0 Transfer Characteristics 0.050 500 0.044 400 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Output Characteristics 0.038 VGS = 4.5 V 0.032 0.026 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Ciss 300 200 Coss 100 VGS = 10 V Crss 0.020 0 0 5 10 15 20 25 0 30 8 16 On-Resistance vs. Drain Current 32 40 Capacitance 2.0 10 RDS(on) - On-Resistance (Normalized) ID = 8 A VGS - Gate-to-Source Voltage (V) 24 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 8 VDS = 20 V 6 VDS = 10 V VDS = 30 V 4 2 0 0.0 1.5 3.0 4.5 Qg - Total Gate Charge (nC) Gate Charge Document Number: 67599 S11-1151-Rev. A, 13-Jun-11 6.0 7.5 ID = 8 A 1.7 VGS = 10 V 1.4 VGS = 4.5 V 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4286DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.10 10 0.08 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) ID = 8 A TJ = 25 °C 1 0.1 0.01 0.001 0.0 0.06 TJ = 125 °C 0.04 TJ = 25 °C 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 6 8 10 On-Resistance vs. Gate-to-Source Voltage 80 0.4 0.2 64 0 Power (W) VGS(th) - Variance (V) 4 VGS - Gate-to-Source Voltage (V) - 0.2 ID = 250 μA 48 32 - 0.4 ID = 1 mA - 0.6 - 0.8 - 50 - 25 0 25 50 75 16 100 125 0 0.001 150 0.01 0.1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 10 100 IDM Limited ID - Drain Current (A) 10 ID Limited 1 ms Limited by RDS(on)* 10 ms 1 100 ms 0.1 TC = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 1s 10 s DC 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 67599 S11-1151-Rev. A, 13-Jun-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4286DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 8 ID - Drain Current (A) 6 5 3 2 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 3.5 1.25 2.8 1.00 2.1 0.75 Power (W) Power (W) Current Derating* 1.4 0.50 0.25 0.7 0.00 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67599 S11-1151-Rev. A, 13-Jun-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Si4286DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 120 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67599. www.vishay.com 6 Document Number: 67599 S11-1151-Rev. A, 13-Jun-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000