5962-9762101VFA

REVISIONS
LTR
DESCRIPTION
DATE (YR-MO-DA)
APPROVED
A
Drawing updated to reflect current requirements. – gt
03-01-24
Raymond Monnin
B
Update paragraphs to current MIL-PRF-38535 requirements. - drw
10-03-12
Charles F. Saffle
REV
SHEET
REV
SHEET
REV STATUS
REV
B
B
B
B
B
B
B
B
B
B
B
B
B
B
OF SHEETS
SHEET
1
2
3
4
5
6
7
8
9
10
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12
13
14
PMIC N/A
PREPARED BY
Rajesh Pithadia
STANDARD
MICROCIRCUIT
DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
CHECKED BY
Rajesh Pithadia
APPROVED BY
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
AMSC N/A
Raymond Monnin
DRAWING APPROVAL DATE
98-12-10
REVISION LEVEL
B
MICROCIRCUIT, LINEAR, HIGH SPEED
DIFFERENTIAL LINE DRIVER, MONOLITHIC
SILICON
SIZE
CAGE CODE
A
67268
SHEET
DSCC FORM 2233
APR 97
5962-97621
1 OF 14
5962-E225-10
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
-
97621
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
01
Q
E
A
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
/
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type. The device type identifies the circuit function as follows:
Device type
01
Generic number
Circuit function
55LVDS31
High speed differential line driver
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
Device requirements documentation
M
Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Q or V
Certification and qualification to MIL-PRF-38535
1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 and as follows:
Outline letter
E
F
2
Descriptive designator
GDIP1-T16 or CDIP2-T16
GDFP2-F16 or CDFP3-F16
CQCC1-N20
Terminals
16
16
20
Package style
Dual-in-line
Flat pack
Square leadless chip carrier
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
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REVISION LEVEL
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SHEET
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1.3 Absolute maximum ratings. 1/, 2/
Supply voltage range (VCC) ...........................................................................
Input voltage range (VI) ................................................................................
Continuous total power dissipation, TA  25C: 3/
Cases E and 2 ....................................................................................
Case F ................................................................................................
Thermal resistance, junction-to-case (JC) ....................................................
Thermal resistance, junction-to-ambient (JA):
Case E ................................................................................................
Case F ...............................................................................................
Case 2 ................................................................................................
Storage temperature range (TSTG) ................................................................
Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds .................
Junction temperature (TJ) .............................................................................
-0.5 V to 4 V
-0.5 V to VCC + 0.5 V
1375 mW
1000 mW
See MIL-STD-1835
100C/W
150C/W
85C/W
-65C to +150C
+260C
150C/W
1.4 Recommended operating conditions.
Supply voltage range (VCC) ...........................................................................
High-level input voltage (VIH) ........................................................................
Low-level input voltage (VIL) .........................................................................
Operating free-air temperature (TA) ..............................................................
3 V to 3.6 V
2 V min
0.8 V max
-55C to +125C
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
________
1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
2/ All voltages, except differential I/O bus voltages, are with respect to the network ground terminal.
3/ Derate factor at TA > 25C for cases E and 2 is 11.0 mW/C and for case F is 8.0 mW/C.
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5962-97621
A
REVISION LEVEL
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SHEET
3
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Truth table. The truth table shall be as specified on figure 2.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be
marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer
has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be
marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be
in accordance with MIL-PRF-38535, appendix A.
3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in
MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.
3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535
listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of
compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see
6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this
drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and
herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.
3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for
device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.
3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2
herein) involving devices acquired to this drawing is required for any change that affects this drawing.
3.9 Verification and review for device class M. For device class M, DSCC, DSCC's agent, and the acquiring activity retain the
option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made
available onshore at the option of the reviewer.
3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in
microcircuit group number 53 (see MIL-PRF-38535, appendix A).
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REVISION LEVEL
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TABLE I. Electrical performance characteristics.
Test
Differential output voltage
magnitude
Change in differential output
voltage magnitude between logic
states
Steady-state common-mode
output voltage
Change in steady-state commonmode output voltage between
logic states
Peak-to-peak common-mode
output voltage
Supply current
Symbol
Conditions
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Limits
Device
type
Unit
Min
Max
VOD
RL = 100 , See figure 3
1, 2, 3
01
247
454
mV
VOD
RL = 100 , See figure 3
1, 2, 3
01
-50
50
mV
See figure 4
1, 2, 3
01
1.125
1.375
V
VOC(SS) See figure 4
1, 2, 3
01
-50
50
mV
See figure 4
1, 2, 3
01
150
mV
VIN = 0.8 V or 2 V, Enabled,
No load
1, 2, 3
01
20
mA
VOC(SS)
VOC(PP)
ICC
VIN = 0.8 V or 2 V, RL = 100 ,
Enabled
35
VIN = 0 V or VCC, Disabled
1
High level input current
IIH
VIH = 2 V
1, 2, 3
01
20
A
Low level input current
IIL
VIL = 0.8 V
1, 2, 3
01
10
A
Short-circuit output current
IOS
VO(Y) or VO(Z) = 0 V
1, 2, 3
01
-24
mA
12
VOD = 0 V
High impedance output current
Power off output current
IOZ
IO(OFF)
VO = 0 or 2.4 V
1, 2, 3
01
1
A
VCC = 0 V, VO = 2.4 V
1, 2, 3
01
4
A
7, 8A, 8B
01
Functional test
FT
See 4.4.1c
Propagation delay time, low-tohigh level output
tpLH
RL = 100 CL = 10 pF,
See figure 3
4, 5, 6
01
0.5
4
ns
Propagation delay time, high-tolow level output
tpHL
RL = 100 CL = 10 pF,
See figure 3
4, 5, 6
01
1
4.5
ns
tr
RL = 100 CL = 10 pF,
See figure 3
1/
4, 5, 6
01
0.4
1
ns
Differential output signal rise time
(20% to 80%)
See footnotes at end of table.
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TABLE I. Electrical performance characteristics - continued.
Test
Symbol
Conditions
-55C  TA +125C
unless otherwise specified
Group A
subgroups
Limits
Device
type
Unit
Min
Max
0.4
1
ns
tf
RL = 100 CL = 10 pF,
See figure 3
1/
4, 5, 6
01
Pulse skew (tpHL – tpLH)
tsk(p)
RL = 100 CL = 10 pF,
See figure 3
1/
4, 5, 6
01
0.6
ns
Channel-to-channel output skew
tsk(o)
RL = 100 CL = 10 pF,
See figure 3
1/, 2/
4, 5, 6
01
0.6
ns
Propagation delay time, high
impedance to high level output
tpZH
See figure 5
4, 5, 6
01
15
ns
Propagation delay time, high
impedance to low level output
tpZL
See figure 5
4, 5, 6
01
15
ns
Propagation delay time, high level
to high impedance output
tpHZ
See figure 5
4, 5, 6
01
17
ns
Propagation delay time, low level
to high impedance output
tpLZ
See figure 5
4, 5, 6
01
15
ns
Differential output signal fall time
(80% to 20%)
1/
Tested initially and after any design or process changes which affect this parameter.
2/
Channel-to-channel output skew is the maximum delay time difference between drivers on the same device.
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REVISION LEVEL
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Device type
Case outlines
Terminal
number
01
E and F
2
Terminal symbol
1
1A
NC
2
1Y
1A
3
1Z
1Y
4
G
1Z
5
2Z
G
6
2Y
NC
7
2A
2Z
8
GND
2Y
9
3A
2A
10
3Y
GND
11
3Z
NC
12
G
3A
13
4Z
3Y
14
4Y
3Z
15
4A
G
16
VCC
NC
17
---
4Z
18
---
4Y
19
---
4A
20
---
VCC
NC = No connect
FIGURE 1. Terminal connections.
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INPUT A
H
L
H
L
X
OPEN
OPEN
ENABLES
OUTPUTS
G
G
Y
Z
H
H
X
X
L
H
X
X
X
L
L
H
X
L
H
L
H
L
Z
L
L
L
H
L
H
Z
H
H
H = High level
L = Low level
Z = High impedance (off)
X = Irrelevant
FIGURE 2. Truth table.
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NOTES:
1.
2.
All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse repetition rate
(PRR) = 50 Mpps, pulse width = 10 ±0.2 ns.
CL = includes instrumentation and fixture capacitance within 6 mm of the device under test (D.U.T).
FIGURE 3. Test circuit with timing and voltage definitions for the differential output signal.
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NOTES:
1.
2.
3.
All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse repetition rate
(PRR) = 50 Mpps, pulse width = 10 ±0.2 ns.
CL = includes instrumentation and fixture capacitance within 6 mm of the device under test (D.U.T).
The measurement of VOC(PP) is made on test equipment with a -3 dB bandwidth of at least 300 MHz.
FIGURE 4. Test circuit and definitions for the driver common-mode output voltage.
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NOTES:
1.
2.
All input pulses are supplied by a generator having the following characteristics: tr or tf ≤ 1 ns, pulse repetition rate
(PRR) = 0.5 Mpps, pulse width = 500 ±10 ns.
CL = includes instrumentation and fixture capacitance within 6 mm of the device under test (D.U.T).
FIGURE 5. Enable and disable time circuit and waveforms.
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4. VERIFICATION
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in
accordance with MIL-PRF-38535, appendix A.
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.
4.2.1 Additional criteria for device class M.
a.
Burn-in test, method 1015 of MIL-STD-883.
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
(2) TA = +125C, minimum.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
4.2.2 Additional criteria for device classes Q and V.
a.
The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in
method 1015 of MIL-STD-883.
b.
Interim and final electrical test parameters shall be as specified in table II herein.
c.
Additional screening for device class V beyond the requirements of device class Q shall be as specified in
MIL-PRF-38535, appendix B.
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups
A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections
(see 4.4.1 through 4.4.4).
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4.4.1 Group A inspection.
a.
Tests shall be as specified in table II herein.
b.
Subgroups 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.
c.
For device class M, subgroups 7, 8A, and 8B tests shall be sufficient to verify the truth table. For device classes Q and
V, subgroups 7, 8A, and 8B shall include verifying the functionality of the device.
TABLE II. Electrical test requirements.
Test requirements
Interim electrical
parameters (see 4.2)
Final electrical
parameters (see 4.2)
Group A test
requirements (see 4.4)
Group C end-point electrical
parameters (see 4.4)
Group D end-point electrical
parameters (see 4.4)
Group E end-point electrical
parameters (see 4.4)
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Device
class M
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class Q
Device
class V
1
1
1
1, 2, 3, 4, 5, 6, 7, 8A,
8B 1/
1, 2, 3, 4, 5, 6,
7, 8A, 8B 1/
1, 2, 3, 4, 5, 6,
7, 8A, 8B 1/
1, 2, 3, 4, 5, 6, 7, 8A,
8B
1, 2, 3, 4, 5, 6,
7, 8A, 8B
1, 2, 3, 4, 5, 6,
7, 8A, 8B
1
1
1
1
1
1
---
---
---
1/ PDA applies to subgroup 1.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of
MIL-STD-883.
b.
TA = +125C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the
inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD883.
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4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured
(see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table II herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device
classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25C 5C,
after exposure, to the subgroups specified in table II herein.
5. PACKAGING
5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes
Q and V or MIL-PRF-38535, appendix A for device class M.
6. NOTES
6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications
(original equipment), design applications, and logistics purposes.
6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor
prepared specification or drawing.
6.1.2 Substitutability. Device class Q devices will replace device class M devices.
6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for
the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal.
6.3 Record of users. Military and industrial users should inform Defense Supply Center Columbus (DSCC) when a system
application requires configuration control and which SMD's are applicable to that system. DSCC will maintain a record of users
and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic
devices (FSC 5962) should contact DSCC-VA, telephone (614) 692-0544.
6.4 Comments. Comments on this drawing should be directed to DSCC-VA, Columbus, Ohio 43218-3990, or telephone (614)
692-0547.
6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in
MIL-PRF-38535 and MIL-HDBK-1331.
6.6 Sources of supply.
6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535.
The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DSCC-VA and have agreed to
this drawing.
6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103.
The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been
submitted to and accepted by DSCC-VA.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
5962-97621
A
REVISION LEVEL
B
SHEET
14
STANDARD MICROCIRCUIT DRAWING BULLETIN
DATE: 10-03-12
Approved sources of supply for SMD 5962-97621 are listed below for immediate acquisition information only and shall
be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised
to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate
of compliance has been submitted to and accepted by DSCC-VA. This information bulletin is superseded by the next
dated revision of MIL-HDBK-103 and QML-38535. DSCC maintains an online database of all current sources of
supply at http://www.dscc.dla.mil/Programs/Smcr/.
Standard
microcircuit drawing
PIN 1/
Vendor
CAGE
number
Vendor
similar
PIN 2/
5962-9762101QEA
01295
SNJ55LVDS31J
5962-9762101QFA
01295
SNJ55LVDS31W
5962-9762101Q2A
01295
SNJ55LVDS31FK
5962-9762101VFA
01295
SNV55LVDS31W
1/ The lead finish shown for each PIN representing
a hermetic package is the most readily available
from the manufacturer listed for that part. If the
desired lead finish is not listed contact the vendor
to determine its availability.
2/ Caution. Do not use this number for item
acquisition. Items acquired to this number may not
satisfy the performance requirements of this drawing.
Vendor CAGE
number
01295
Vendor name
and address
Texas Instruments, Inc.
Semiconductor Group
8505 Forest Ln.
PO Box 660199
Dallas, TX 75243
Point of contact:
U.S. Highway 75 South
P.O. Box 84, M/S 853
Sherman, TX 75090-9493
The information contained herein is disseminated for convenience only and the
Government assumes no liability whatsoever for any inaccuracies in the
information bulletin.