REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to TR(tr), TR(os), SR+, SR-, NI(BB), NI(PC), CS tests as specified in table I , 1.5, 4.4.1b, and table II. - ro 99-10-20 R. MONNIN B Add test conditions to the input offset voltage temperature sensitivity test and the input offset current temperature sensitivity test in table I. Make changes to the title in table IIB. Editorial changes throughout. - rrp 99-11-17 R. MONNIN C Add radiation hardened level “L” devices and delete figures 1 and 3. - ro 02-06-13 R. MONNIN D Make change to input offset voltage post irradiation limits as specified under table I. - ro 03-10-15 R. MONNIN E Add device type 02 tested at low dose rate. Make changes to 1.2.2, 1.5, Table I, Table IIB, Figure I, and 4.4.4.1. - ro 06-06-09 R. MONNIN F Delete the 50 krads reference for device type 01 under paragraph 1.5. Change the dose rate from “12 mrads(Si) / s” to “10 mrads (Si) / s” for device type 02 under paragraph 1.5. Also under paragraph 1.5, third line of the paragraph, after method 1019, add the words, “condition D”. Make changes to footnote 1/ as specified under Table I. - ro 08-03-11 R. HEBER G Add paragraph 3.1.1 and appendix A. -rrp 08-11-03 R. HEBER H +PSRR tests, make polarity changes to VCM limits. Under Table IIB, 10-10-18 C. SAFFLE Under Table I conditions column, VIO, IIO, +IIB, -IIB, VIO / T, IIO / T, and footnote 1/, delete “VCM = -15 V” and substitute “VCM = +15 V”. Delete paragraphs 4.4.4.1.1 and 4.4.4.2. - ro J Add device type 03. - drw 11-01-04 C SAFFLE K Sheet 13, table IIA, add subgroups 4, 5, 6, 7, 8A and 8B for group C and D end-point electrical parameters for device type 03. - drw 11-03-25 C SAFFLE REV SHEET REV K K K K K K K K K SHEET 15 16 17 18 19 20 21 22 23 REV STATUS REV K K K K K K K K K K K K K K OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rajesh Pithadia STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.dscc.dla.mil CHECKED BY Rajesh Pithadia APPROVED BY THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE Raymond Monnin DRAWING APPROVAL DATE MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON 98-11-06 AMSC N/A REVISION LEVEL K SIZE CAGE CODE A 67268 SHEET DSCC FORM 2233 APR 97 1 OF 5962-99504 23 5962-E288-11 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ RHA designator (see 1.2.1) 01 V C A Device type (see 1.2.2) Device class designator (see 1.2.3) Case outline (see 1.2.4) Lead finish (see 1.2.5) 99504 / \/ Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function LM124A LM124A LM124A Quad, operational amplifier Quad, operational amplifier Quad, operational amplifier 01 02 03 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device requirements documentation Device class M Vendor self-certification to the requirements for MIL-STD-883 compliant, nonJAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows: Outline letter C D Z Descriptive designator Terminals GDIP1-T14 or CDIP2-T14 GDFP1-F14 or CDFP2-F14 GDFP1-G14 14 14 14 Package style Dual-in-line Flat pack Flat pack with gull wing leads 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 2 1.3 Absolute maximum ratings. 1/ Supply voltage range (+VCC) ...................................................................... Input voltage range ...................................................................................... Differential input voltage .............................................................................. Input current (VIN -0.3 V dc) ..................................................................... Power dissipation: 3/ Case C ..................................................................................................... Cases D and Z ......................................................................................... Storage temperature range ......................................................................... Output short-circuit to GND: 4/ (One amplifier, +VCC 15 V dc and TA = 25C) ...................................... Lead temperature (soldering, 10 seconds) .................................................. Maximum junction temperature (TJ) ............................................................ 32 V dc or 16 V dc -0.3 V dc to +32 V dc 32 V dc 50 mA 2/ 1260 mW 700 mW -65C to +150C Continuous 260C 150C Thermal resistance, junction-to-case (JC): Case C ..................................................................................................... 19C/W Cases D and Z ......................................................................................... 18C/W Thermal resistance, junction-to-ambient (JA): Case C ..................................................................................................... 103C/W (still air) 51C/W (500 LF/min air flow) Cases D and Z ......................................................................................... 176C/W (still air) 116C/W (500 LF/min air flow) 1.4 Recommended operating conditions. Supply voltage range ................................................................................... 5 V to 15 V Ambient operating temperature range (TA) ................................................. -55C to +125C ______ 3/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the operational amplifiers to go to the +VCC voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than –0.3 V dc at 25C. The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ, JA, and TA. The 4/ maximum allowable power dissipation at any temperature is PD = (TJ – TA) / JA or the number given in 1.3 herein, whichever is lower. Short circuits from the output to +VCC can cause excessive heating and eventual destruction. When considering short 1/ 2/ circuits to ground, the maximum output current is approximately 40 mA independent of the magnitude of +VCC. At values of supply voltage in excess of +15 V dc, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 3 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 – 300 rads(Si) / s) RHA designator R .................................................................................... 100 krads (Si) 5/ Device type 02: Maximum total dose available (dose rate = 10 mrads(Si) / s) RHA designator R .................................................................................... 100 krads (Si) 6/ The manufacturer supplying RHA parts on this drawing has completed Lot Acceptance testing at Low Dose Rate (10 mrad/s) on these RHA marked parts. The Low Does Rate (LDR) testing that was performed demonstrates that these parts from the lot tested do not have an Enhanced Low Dose rate Sensitivity as defined by Method 1019, condition D. Lot Acceptance Testing at LDR will continue to be performed on each wafer or wafer lot until characterization testing has been performed in accordance with Method 1019 of MIL-STD-883. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested device was ELDRS, the part number will be changed to an 02 device to distinguish the two parts. 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 MIL-STD-1835 - Test Method Standard Microcircuits. Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 MIL-HDBK-780 - List of Standard Microcircuit Drawings. Standard Microcircuit Drawings. (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. ______ 5/ For device type 01, these parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, test method 1019, condition A. 6/ For device type 02, these parts have been tested and do not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, test method 1019, condition D. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 4 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturer's product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime’s agent, and the acquiring activity retain the option to review the manufacturer's facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 5 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/, 2/ -55C TA +125C Group A subgroups Device type unless otherwise specified Input offset voltage VIO Max 01, 02 -2 2 03 -3 3 01, 02 -4 4 03 -5 5 1 01, 02 -2.5 2.5 1 01, 02 -2 2 03 -3 3 01, 02 -4 4 03 -5 5 1 01, 02 -2.5 2.5 1 01, 02 -2 2 03 -3 3 01, 02 -4 4 03 -5 5 VCM = +15 V 2, 3 M, D, P, L, R +VCC = 2 V, -VCC = -28, VCM = -13 V 2, 3 M, D, P, L, R +VCC = 5 V, -VCC = GND, VCM = +1.4 V 2, 3 M, D, P, L, R 1 01, 02 -2.5 2.5 +VCC = 2.5 V, -VCC = -2.5, 1 01, 02 -2 2 03 -3 3 01, 02 -4 4 03 -5 5 1 01, 02 -2.5 2.5 1, 2 01, 02 -10 10 3 -30 30 1 -15 15 -10 10 -30 30 VCM = -1.1 V 2, 3 M, D, P, L, R Input offset current IIO Unit Min 1 +VCC = 30 V, -VCC = GND, Limits +VCC = 30 V, -VCC = GND, VCM = +15 V M, D, P, L, R 1 03 2, 3 mV mV mV mV nA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 6 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/, 2/ -55C TA +125C Group A subgroups Device type unless otherwise specified Input offset current IIO VCM = -13 V M, D, P, L, R Max -10 10 3 -30 30 1 -15 15 -10 10 -30 30 -10 10 3 -30 30 1 -15 15 -10 10 -30 30 -10 10 3 -30 30 1 -15 15 -10 10 -30 30 -50 +0.1 3 -100 +0.1 1 -75 +0.1 -85 +0.1 -100 +01 -50 +0.1 -100 +0.1 1 01, 02 03 2, 3 1, 2 +VCC = 5 V, -VCC = GND, VCM = +1.4 V M, D, P, L, R 1 01, 02 03 2, 3 1, 2 +VCC = 2.5 V, -VCC = -2.5, VCM = -1.1 V M, D, P, L, R 1 01, 02 03 2, 3 Input bias current +IIB 1, 2 +VCC = 30 V, -VCC = GND, VCM = +15 V M, D, P, L, R 1 01, 02 03 2, 3 1, 2 +VCC = 2 V, -VCC = -28, All 3 VCM = -13 V M, D, P, L, R +VCC = 5 V, -VCC = GND, 1 01, 02 -75 +0.1 1, 2 All -50 +0.1 -100 +0.1 3 VCM = +1.4 V M, D, P, L, R +VCC = 2.5 V, -VCC = -2.5 V, 1 01, 02 -75 +0.1 1, 2 All -50 +0.1 -100 +0.1 -75 +0.1 3 VCM = -1.1 V M, D, P, L, R Unit Min 1, 2 +VCC = 2 V, -VCC = -28, Limits 1 01, 02 nA nA nA nA nA nA nA See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 7 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/, 2/ -55C TA +125C Group A subgroups Device type unless otherwise specified Input bias current -IIB VCM = +15 V M, D, P, L, R Max -50 +0.1 3 -100 +0.1 1 -75 +0.1 -85 +0.1 -100 +0.1 -50 +0.1 -100 +0.1 01, 02 1 03 2, 3 1, 2 +VCC = 2 V, -VCC = -28 V, M, D, P, L, R +VCC = 5 V, -VCC = GND, M, D, P, L, R +VCC = 2.5 V, -VCC = -2.5 V, M, D, P, L, R Common mode rejection ratio CMRR Output short circuit current IOS+ Power supply current ICC 01, 02 -75 +0.1 1, 2 All -50 +0.1 -100 +0.1 1 01, 02 -75 +0.1 1, 2 All -50 +0.1 -100 +0.1 3 VCM = -1.1 V +PSRR 1 3 VCM = +1.4 V Power supply rejection ratio All 3 VCM = -13 V -VCC = GND, VCM = +1.4 V, 5 V VCC 30 V +VCC = 30 V, -VCC = GND, VOUT = 25 V +VCC = 30 V, -VCC = GND VIO / T +VCC = 5 V, -VCC = GND, Input offset current temperature sensitivity IIO / T nA nA nA nA 1 01, 02 -75 +0.1 1, 2, 3 All -100 100 1, 2, 3 All 76 dB 1, 2, 3 All -70 mA 1, 2 All 3 3 Input offset voltage temperature sensitivity Unit Min 1, 2 +VCC = 30 V, -VCC = GND, Limits V/V mA 4 2, 3 All -30 30 V/C +VCC = 5 V, -VCC = GND, 2 All -400 400 pA/C VCM = +1.4 V 3 -700 700 VCM = +1.4 V 3/, 4/ 3/, 4/ See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 8 TABLE I. Electrical performance characteristics - Continued. Test Conditions 1/, 2/ -55C TA +125C Symbol Group A subgroups Device type unless otherwise specified Logical “0” output voltage VOL Min +VCC = 30 V, -VCC = GND, RL = 10 k +VCC = 30 V, -VCC = GND, IOL = 5 Ma +VCC = 4.5 V, -VCC = GND, IOL = 2 A Logical “1” output voltage VOH +VCC = 30 V, -VCC = GND, IOH = -10 mA +VCC = 4.5 V, -VCC = GND, IOH = -10 mA AVS+ Voltage gain Limits +VCC = 30 V, -VCC = GND, 1 V VOUT 26 V, M, D, P, L, R +VCC = 30 V, -VCC = GND, 5 V VOUT 20 V, All 35 mV 4, 5, 6 All 1.5 V 4, 5, 6 All 0.4 V 4, 5, 6 All 27 V 4, 5, 6 All 2.4 V 4 All 50 V/mV 25 1 01, 02 40 4 All 50 5, 6 RL = 2 k M, D, P, L, R Max 4, 5, 6 5, 6 RL = 10 k Unit V/mV 25 1 01, 02 40 4, 5, 6 All 10 4, 5, 6 All 10 4, 5, 6 All 27 V 4, 5, 6 All 26 V +VCC = 5 V, -VCC = GND, AVS Voltage gain 1 V VOUT 2.5 V, V/mV RL = 10 k +VCC = 5 V, -VCC = GND, 1 V VOUT 2.5 V, RL = 2 k Maximum output voltage swing +VOP +VCC = 30 V, -VCC = GND, VOUT = +30 V, RL = 10 k +VCC = 30 V, -VCC = GND, VOUT = +30 V, RL = 2 k Transient response: rise time TR(tr) +VCC = 30 V, -VCC = GND 4/ 7, 8A, 8B All 1 s Transient response: overshoot TR(os) +VCC = 30 V, -VCC = GND 7, 8A, 8B 01, 02 50 % See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 9 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/, 2/ -55C TA +125C Group A subgroups Device type unless otherwise specified Limits Min Unit Max Slew rate: rise SR+ +VCC = 30 V, -VCC = GND 4/ 7, 8A, 8B All 0.1 V/s Slew rate: fall SR- +VCC = 30 V, -VCC = GND 4/ 7, 8A, 8B All 0.1 V/s Noise broadband NI(BB) +VCC = 15 V, -VCC = -15 V, BW = 10 Hz to 5 kHz 4/ 7 All 15 V/rms Noise popcorn NI(PC) RS = 20 k, BW = 10 Hz to 5 kHz 4/ 7 All 50 V/peak Channel separation CS 7 All 80 dB 7 All 80 dB 7 All 80 dB 7 All 80 dB 7 All 80 dB 7 All 80 dB 7 All 80 dB 7 All 80 dB 7 All 80 dB 7 All 80 dB +VCC = 15 V, -VCC = -15 V, +VCC = 30 V, -VCC = GND, RL = 2 k VIN = 1 V and 16 V, A to B RL = 2 k, 5/ VIN = 1 V and 16 V, A to C RL = 2 k, 5/ VIN = 1 V and 16 V, A to D RL = 2 k, 5/ VIN = 1 V and 16 V, B to A RL = 2 k, 5/ VIN = 1 V and 16 V, B to C RL = 2 k, 5/ VIN = 1 V and 16 V, B to D RL = 2 k, 5/ VIN = 1 V and 16 V, C to A RL = 2 k, 5/ VIN = 1 V and 16 V, C to B RL = 2 k, 5/ VIN = 1 V and 16 V, C to D RL = 2 k, 5/ See footnotes at end of table. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 10 TABLE I. Electrical performance characteristics - Continued. Test Conditions 1/, 2/ -55C TA +125C Symbol Group A subgroups Device type unless otherwise specified Channel separation CS Limits Min VIN = 1 V and 16 V, D to A RL = 2 k, 5/ VIN = 1 V and 16 V, D to B RL = 2 k, 5/ VIN = 1 V and 16 V, D to C RL = 2 k, 5/ Unit Max 7 All 80 dB 7 All 80 dB 7 All 80 dB 1/ RHA devices supplied to this drawing meet and are tested to all levels M, D, P, L, R of irradiation. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA = +25C. 2/ The 01 device may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, test method 1019, condition A for device type 01. Device type 02, has been tested at low dose rate and does not demonstrate low dose rate sensitivity (see 1.5 herein). 3/ Calculated parameter. 4/ For device type 03, the parameter is guaranteed to the limit specified by characterization, but not production tested. 5/ +VCC = 30 V, -VCC = 0 V. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA = +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table IIA herein. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 11 Device types 01, 02 and 03 Case outlines C, D, and Z Terminal number Terminal symbol 1 OUTPUT 1 2 -INPUT 1 3 +INPUT 1 4 +VCC 5 +INPUT 2 6 -INPUT 2 7 OUTPUT 2 8 OUTPUT 3 9 -INPUT 3 10 +INPUT 3 11 GND 12 +INPUT 4 13 -INPUT 4 14 OUTPUT 4 FIGURE 1. Terminal connections. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 12 TABLE IIA. Electrical test requirements. Test requirements Interim electrical parameters (see 4.2) Final electrical parameters (see 4.2) Group A test requirements (see 4.4) Group C end-point electrical parameters (see 4.4) Group D end-point electrical parameters (see 4.4) Group E end-point electrical parameters (see 4.4) Subgroups (in accordance with MIL-PRF-38535, table III) Subgroups (in accordance with MIL-STD-883, method 5005, table I) Device class M Device class Q Device class V 1 1 1 1, 2, 3, 4 1/ 1, 2, 3, 4 1/ 1, 2, 3, 4, 1/ 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7, 8A, 8B 1 1 1, 2, 3, 4, 5, 6, 7, 8A, 8B 2/, 3/ 1 1 1, 2, 3, 4, 5, 6, 7, 8A, 8B 3/ 1 1 1 1/ PDA applies to subgroup 1. 2/ Delta limits as specified in table IIB shall be required where specified, and the delta limits shall be computed with reference to the previous endpoint electrical parameters. 3/ Subgroups 4, 5, 6, 7, 8A and 8B applies for device type 03 only. TABLE IIB. Operating life test delta parameters. TA = +25C. 1/ Parameter Min Max 01, 02 -0.5 mV 0.5 mV +IIB 1/ 01, 02 -10 nA 10 nA 03 -16 nA 16 nA 01, 02 -10 nA 10 nA 03 -16 nA 16 nA +VCC = 30 V, -VCC = GND, VCM = +15 V. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Delta limit VIO 1/ -IIB 1/ 1/ Device types SIZE 5962-99504 A REVISION LEVEL K SHEET 13 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table IIA herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4.1 Group A inspection. a. Tests shall be as specified in table IIA herein. b. Subgroups 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted. 4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table IIA herein. 4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883: a. Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. b. TA = +125C, minimum. c. Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883. 4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1005 of MIL-STD-883. 4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table IIA herein STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 14 4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured (see 3.5 herein). a. End-point electrical parameters shall be as specified in table IIA herein. b. For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at TA = +25C 5C, after exposure, to the subgroups specified in table IIA herein. 4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883 method 1019 condition A for device type 01, condition D for device type 02 and as specified herein. 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes. 6.1.1 Replaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor prepared specification or drawing. 6.1.2 Substitutability. Device class Q devices will replace device class M devices. 6.2 Configuration control of SMD's. All proposed changes to existing SMD's will be coordinated with the users of record for the individual documents. This coordination will be accomplished using DD Form 1692, Engineering Change Proposal. 6.3 Record of users. Military and industrial users should inform DLA Land and Maritime when a system application requires configuration control and which SMD's are applicable to that system. DLA Land and Maritime will maintain a record of users and this list will be used for coordination and distribution of changes to the drawings. Users of drawings covering microelectronic devices (FSC 5962) should contact DLA Land and Maritime -VA, telephone (614) 692-0547. 6.4 Comments. Comments on this drawing should be directed to DLA Land and Maritime -VA, Columbus, Ohio 43218-3990, or telephone (614) 692-0540. 6.5 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. 6.6 Sources of supply. 6.6.1 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed in QML-38535 have submitted a certificate of compliance (see 3.6 herein) to DLA Land and Maritime -VA and have agreed to this drawing. 6.6.2 Approved sources of supply for device class M. Approved sources of supply for class M are listed in MIL-HDBK-103. The vendors listed in MIL-HDBK-103 have agreed to this drawing and a certificate of compliance (see 3.6 herein) has been submitted to and accepted by DLA Land and Maritime -VA. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 15 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-99504 A.1 SCOPE A.1.1 Scope. This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multi-chip modules (MCMs), hybrids, electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device class V) are reflected in the Part or Identification Number (PIN). When available, a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. A.1.2 PIN. The PIN is as shown in the following example: 5962 R Federal stock class designator \ RHA designator (see A.1.2.1) 01 V 9 A Device type (see A.1.2.2) Device class designator (see A.1.2.3) Die code Die details (see A.1.2.4) 99504 / \/ Drawing number A.1.2.1 RHA designator. Device classes Q and V RHA identified die meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. A.1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number 01 02 03 LM124A LM124A LM124A Circuit function Quad, operational amplifier Quad, operational amplifier Quad, operational amplifier A.1.2.3 Device class designator. Device class Q or V STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 Device requirements documentation Certification and qualification to the die requirements of MIL-PRF-38535 SIZE 5962-99504 A REVISION LEVEL K SHEET 16 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-99504 A.1.2.4 Die details. The die details designation is a unique letter which designates the die's physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. A.1.2.4.1 Die physical dimensions. Die type Figure number 01, 02 03 A-1 B-1 A.1.2.4.2 Die bonding pad locations and electrical functions. Die type Figure number 01, 02 03 A-1 B-1 A.1.2.4.3 Interface materials. Die type Figure number 01, 02 03 A-1 B-1 A.1.2.4.4 Assembly related information. Die type Figure number 01, 02 03 A-1 B-1 A.1.3 Absolute maximum ratings. See paragraph 1.3 herein for details. A.1.4 Recommended operating conditions. See paragraph 1.4 herein for details. A.2 APPLICABLE DOCUMENTS. A.2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARD MIL-STD-883 - Test Method Standard Microcircuits. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 17 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-99504 A.2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. A.3 REQUIREMENTS A.3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. A.3.2 Design, construction and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein and the manufacturer’s QM plan for device classes Q and V. A.3.2.1 Die physical dimensions. The die physical dimensions shall be as specified in A.1.2.4.1 and on figure A-1 and B-1. A.3.2.2 Die bonding pad locations and electrical functions. The die bonding pad locations and electrical functions shall be as specified in A.1.2.4.2 and on figure A-1. A.3.2.3 Interface materials. The interface materials for the die shall be as specified in A.1.2.4.3 and on figure A-1 and B-1. A.3.2.4 Assembly related information. The assembly related information shall be as specified in A.1.2.4.4 and on figure A-1 and B-1. A.3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined in paragraph 3.2.5 herein. A.3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. A.3.4 Electrical test requirements. The wafer probe test requirements shall include functional and parametric testing sufficient to make the packaged die capable of meeting the electrical performance requirements in table I. A.3.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark, the manufacturer’s identification and the PIN listed in A.1.2 herein. The certification mark shall be a “QML” or “Q” as required by MIL-PRF-38535. A.3.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see A.6.4 herein). The certificate of compliance submitted to DLA Land and Maritime -VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturer’s product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and the requirements herein. A.3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 18 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-99504 A.4 VERIFICATION A.4.1 Sampling and inspection. For device classes Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer’s Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit, or function as described herein. A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturer’s QM plan. As a minimum, it shall consist of: a. Wafer lot acceptance for class V product using the criteria defined in MIL-STD-883, method 5007. b. 100% wafer probe (see paragraph A.3.4 herein). c. 100% internal visual inspection to the applicable class Q or V criteria defined in MIL-STD-883, method 2010 or the alternate procedures allowed in MIL-STD-883, method 5004. A.4.3 Conformance inspection. A.4.3.1 Group E inspection. Group E inspection is required only for parts intended to be identified as radiation assured (see A.3.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table II herein. Group E tests and conditions are as specified in paragraphs 4.4.4 and 4.4.4.1 herein. A.5 DIE CARRIER A.5.1 Die carrier requirements. The requirements for the die carrier shall be accordance with the manufacturer’s QM plan or as specified in the purchase order by the acquiring activity. The die carrier shall provide adequate physical, mechanical and electrostatic protection. A.6 NOTES A.6.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original equipment), design applications, and logistics purposes. A.6.2 Comments. Comments on this appendix should be directed to DLA Land and Maritime -VA, Columbus, Ohio, 432183990 or telephone (614)-692-0540. A.6.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-PRF-38535 and MIL-HDBK-1331. A.6.4 Sources of supply for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see A.3.6 herein) to DLA Land and Maritime VA and have agreed to this drawing. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 19 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-99504 Die bonding pad locations and electrical functions Die physical dimensions. Die size: Die thickness: Pad size: Minimum pitch: 1346.2 m x 1422.4 m (53.0 mils x 56.0 mils) 330 m nominal 92 m x 92 m 127 m Interface materials. Top metallization: Backside metallization: Al 0.5%Cu Si (bare) Glassivation. Type: Thickness: Vapox over metal (VOM) only 8 kÅ – 12 kÅ Substrate: Silicon Assembly related information. Substrate potential: Special assembly instructions: Floating or GND None FIGURE A-1. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 20 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-99504 Die bonding pad locations measured in m. Pad number Signal name X Y 1 Output 1 559 81 2 -Input 1 461 597 3 +Input 1 160 597 4 +VCC -29 597 5 +Input 2 -160 597 6 -Input 2 -461 597 7 Output 2 -559 81 8 Output 3 -559 -81 9 -Input 3 -461 -597 10 +Input 3 -160 -597 11 GND 7 -597 12 +Input 4 160 -597 13 -Input 4 461 -597 14 Output 4 559 -81 NOTE: 1. Die bonding pad locations are referenced to die center. FIGURE A-1. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 21 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-99504 Die bonding pad locations and electrical functions Die physical dimensions. Die size: Die thickness: 1574.8 m x 1447.8 m (62.0 mils x 57.0 mils) 15 mils Interface materials. Top metallization: Backside metallization: AlCu 0.5% Silicon with backgrind Glassivation. Type: Thickness: Teos 7 kA Substrate: Silicon Assembly related information. Backside potential: Special assembly instructions: Floating None FIGURE B-1. Die bonding pad locations and electrical functions. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 22 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-99504 BOND PAD COORDINATES (microns) DESCRIPTION 1OUT 1IN1IN+ Vcc 2IN+ 2IN2OUT 3OUT 3IN3IN+ GND 4IN+ 4IN4OUT PAD NUMBER 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Xmin 426.72 25.40 25.40 25.40 25.40 25.40 426.72 949.96 1346.20 1346.20 1346.20 1346.20 1346.20 949.96 Ymin 1249.68 1093.47 808.99 635 462.28 177.80 25.40 25.40 177.80 462.28 635 807.72 1092.20 1249.68 Xmax 523.24 127 127 127 127 127 523.24 1046.48 1447.80 1447.80 1447.80 1447.80 1447.80 1046.48 Ymax 1346.20 1192.53 910.59 734.06 563.88 279.40 121.92 121.92 279.40 563.88 736.60 909.32 1193.80 1346.20 NOTE: 1. Die bonding pad locations are referenced to die center. FIGURE B-1. Die bonding pad locations and electrical functions – Continued. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-99504 A REVISION LEVEL K SHEET 23 STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 11-03-25 Approved sources of supply for SMD 5962-99504 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the addition or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DLA Land and Maritime -VA. This information bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. DLA Land and Maritime maintains an online database of all current sources of supply at http://www.dscc.dla.mil/Programs/Smcr/. Standard microcircuit drawing PIN 1/ Vendor CAGE number Vendor similar PIN 2/ 5962L9950401VCA 3/ LM124AJLQMLV 5962L9950401VDA 3/ LM124AWLQMLV 5962L9950401VZA 3/ LM124AWGLQMLV 5962R9950401QCA 3/ LM124AJRQML 5962R9950401QDA 3/ LM124AWRQML 5962R9950401QZA 3/ LM124AWGRQML 5962R9950401VCA 27014 LM124AJRQMLV 5962R9950401VDA 27014 LM124AWRQMLV 5962R9950401VZA 27014 LM124AWGRQMLV 5962R9950401V9A 27014 LM124 MDR 5962R9950402VCA 27014 LM124AJRLQMLV 5962R9950402VDA 27014 LM124AWRLQMLV 5962R9950402VZA 27014 LM124AWGRLQMLV 5962R9950402V9A 27014 LM124 MDE 5962-9950403VCA 01295 LM124AJQMLV 5962-9950403V9B 01295 LM124AKGD-SP 1/ The lead finish shown for each PIN representing a hermetic package is the most readily available from the manufacturer listed for that part. If the desired lead finish is not listed contact the vendor to determine its availability. 2/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. 3/ Not available from an approved source of supply. 1 of 2 STANDARD MICROCIRCUIT DRAWING BULLETIN - CONTINUED DATE: 11-03-25 Vendor CAGE number Vendor name and address 27014 National Semiconductor 2900 Semiconductor Drive P.O. Box 58090 Santa Clara, CA 95052-8090 01295 Texas Instruments, Inc. Semiconductor Group 8505 Forest Ln. PO Box 660199 Dallas, TX 75243 Point of contact: U.S. Highway 75 South P.O. Box 84, M/S 853 Sherman, TX 75090-9493 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. 2 of 2