IRF9540S, SiHF9540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 100 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 0.20 61 Qgs (nC) 14 Qgd (nC) 29 Configuration Single S DESCRIPTION D2PAK (TO-263) G G D • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • 175 °C Operating Temperature • Fast Switching • Compliant to RoHS Directive 2002/95/EC D S P-Channel MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free D2PAK (TO-263) SiHF9540S-GE3 IRF9540SPbF SiHF9540S-E3 D2PAK (TO-263) SiHF9540STRL-GE3a IRF9540STRLPbFa SiHF9540STL-E3a Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current SYMBOL VDS VGS VGS at - 10 V TC = 25 °C TC = 100 °C Currenta ID Pulsed Drain IDM Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb EAS IAR Repetitive Avalanche Currenta Repetitive Avalanche Energya EAR Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = - 19 A (see fig. 12). c. ISD - 19 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material) LIMIT - 100 ± 20 - 19 - 13 - 72 1.0 0.025 640 - 19 15 150 3.7 - 5.5 - 55 to + 175 300d UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91079 S11-1051-Rev. C, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9540S, SiHF9540S Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - - 40 Maximum Junction-to-Case (Drain) RthJC - - 1.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0, ID = - 250 μA - 100 - - V VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.087 - V/°C VGS(th) VDS = VGS, ID = - 250 μA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 100 V, VGS = 0 V - - - 100 VDS = - 80 V, VGS = 0 V, TJ = 150 °C - - - 500 - - 0.20 6.2 - - S - 1400 - - 590 - - 140 - - - 61 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = - 11 Ab VGS = - 10 V VDS = - 50 V, ID = - 11 A μA Dynamic Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 14 Gate-Drain Charge Qgd - - 29 Turn-On Delay Time td(on) - 16 - - 73 - - 34 - - 57 - - 4.5 - - 7.5 - - - - 19 S - - - 72 TJ = 25 °C, IS = - 19 A, VGS = 0 Vb - - - 5.0 Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = - 10 V ID = - 19 A, VDS = - 80 V, see fig. 6 and 13b VDD = - 50 V, ID = - 19 A, RG = 9.1 , RD = 2.4 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact pF nC ns D nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = - 19 A, dI/dt = 100 A/μsb V - 130 260 ns - 0.35 0.70 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 91079 S11-1051-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9540S, SiHF9540S Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 102 VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V 101 - 4.5 V - ID, Drain Current (A) - ID, Drain Current (A) Top 25 °C 175 °C 101 20 µs Pulse Width TC = 25 °C 100 4 101 - VDS, Drain-to-Source Voltage (V) 91079_01 20 µs Pulse Width VDS = - 50 V Fig. 1 - Typical Output Characteristics, TC = 25 °C 101 - 4.5 V 20 µs Pulse Width TC = 175 °C 100 91079_02 3.0 Fig. 2 - Typical Output Characteristics, TC = 175 °C Document Number: 91079 S11-1051-Rev. C, 30-May-11 7 8 9 10 ID = - 19 A VGS = - 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60- 40 - 20 0 101 - VDS, Drain-to-Source Voltage (V) 6 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) - ID, Drain Current (A) VGS Top - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V 5 - VGS, Gate-to-Source Voltage (V) 91079_03 91079_04 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9540S, SiHF9540S 3000 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 2500 2000 Ciss 1500 1000 Coss 500 Crss - ISD, Reverse Drain Current (A) Vishay Siliconix 101 175 °C 25 °C 100 VGS = 0 V 0 100 101 0.0 - VDS, Drain-to-Source Voltage (V) 91079_05 1.0 2.0 3.0 5.0 4.0 - VSD, Source-to-Drain Voltage (V) 91079_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 103 ID = - 19 A 16 2 VDS = - 50 V VDS = - 20 V 12 Operation in this area limited by RDS(on) 5 VDS = - 80 V - ID, Drain Current (A) - VGS, Gate-to-Source Voltage (V) 20 8 4 102 5 100 µs 2 1 ms 10 5 10 ms 2 1 TC = 25 °C TJ = 175 °C Single Pulse 5 For test circuit see figure 13 0 0 91079_06 10 20 30 40 50 0.1 60 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 2 0.1 91079_08 2 5 1 2 5 10 2 5 102 2 5 103 - VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91079 S11-1051-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9540S, SiHF9540S Vishay Siliconix + VDD D.U.T. Rg 16 - ID, Drain Current (A) L VDS 20 IAS - 10 V 12 0.01 Ω tp 8 Fig. 10a - Switching Time Test Circuit 4 td(on) 0 25 50 75 100 125 150 10 % TC, Case Temperature (°C) 91079_09 td(off) tf tr VGS 175 Fig. 9 - Maximum Drain Current vs. Case Temperature 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 PDM 0.2 0.1 0.1 t1 t2 0.05 0.02 0.01 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 10-2 10-5 91079_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91079 S11-1051-Rev. C, 30-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9540S, SiHF9540S Vishay Siliconix IAS RD VDS VGS VDS D.U.T. Rg +VDD VDD - 10 V tp Pulse width ≤ 1 µs Duty factor ≤ 0.1 % VDS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 2000 ID - 7.8 A - 13 A Bottom - 19 A Top 1600 1200 800 400 VDD = - 25 V 0 25 91079_12c 50 75 100 125 150 175 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91079 S11-1051-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF9540S, SiHF9540S Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg + • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91079. Document Number: 91079 S11-1051-Rev. C, 30-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000