SiHP22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. (V) • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC) 17 • 100 % avalanche tested Qgd (nC) 25 • Ultra low Ron Configuration Single • dV/dt ruggedness • Ultra low gate charge (Qg) D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-220AB APPLICATIONS G • PFC power supply stages • Hard switching topologies G D S • Solar inverters S • UPS N-Channel MOSFET • Motor control • Lighting • Server telecom ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP22N60S-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID 13 65 Single Pulse Avalanche Energy b EAS 690 Repetitive Avalanche Energy a EAR 25 PD 250 Maximum Power Dissipation Drain-Source Voltage Slope TO-220AB TO-220AB TJ = 125 °C Reverse Diode dV/dt d Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c 2 dV/dt TJ, Tstg for 10 s V 22 IDM Linear Derating Factor UNIT 37 5.3 -55 to +150 300 A W/°C mJ W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. S15-0982-Rev. F, 27-Apr-15 Document Number: 91373 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP22N60S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient TO-220AB RthJA - 62 Maximum Junction-to-Case (Drain) TO-220AB RthJC - 0.5 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current VDS VGS = 0 V, ID = 1 mA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.70 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS VGS = ± 30 V - - ±1 VDS = 600 V, VGS = 0 V - - 1 VDS = 600 V, VGS = 0 V, TJ = 150 °C - - 100 μA - 0.160 0.190 Ω gfs VDS = 50 V, ID = 13 A - 9.4 - S Input Capacitance Ciss 2810 5620 Coss 296 1480 2960 Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz 562 Output Capacitance 6.6 33 66 Effective Output Capacitance (Time Related) Coss eff. (TR)a 155 - Drain-Source On-State Resistance Forward Transconductance a RDS(on) VGS = 10 V ID = 11 A Dynamic VGS = 0 V VDS = 0 V to 480 V - 75 110 VGS = 10 V ID = 22 A, VDS = 480 V - 17 - Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 25 - Turn-On Delay Time td(on) - 24 50 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg VDD = 380 V, ID = 22 A, Rg = 9.1 Ω, VGS = 10 V - 68 100 - 77 115 - 59 90 f = 1 MHz, open drain 0.13 0.65 1.3 - - 22 - - 88 pF nC ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 22 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 25 V S - - 1.2 V - 462 690 ns - 8.3 16 μC - 30 60 A Note a. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. S15-0982-Rev. F, 27-Apr-15 Document Number: 91373 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP22N60S www.vishay.com Vishay Siliconix ID, Drain Current (A) 50 VGS Top 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V 5V Bottom 4 V 40 30 20 10 TJ = 25 °C 4V 0 0 4 8 12 16 20 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 24 3.5 ID = 22 A VGS = 10 V 3 2.5 2 1.5 1 0.5 0 - 60 - 40 - 20 0 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, TJ = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature 100 000 VGS Top 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V 5V Bottom 4 V 18 12 Capacitance (pF) ID, Drain Current (A) 30 24 Ciss 1000 Crss TJ = 150 °C 4 .0 V 10 0 4 8 12 16 20 24 1 10 Fig. 2 - Typical Output Characteristics, TJ = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 60 12.0 VGS, Gate-to-Source Voltage (V) TJ = 25 °C 50 40 30 20 TJ = 150 °C 10 0 2 4 6 8 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-0982-Rev. F, 27-Apr-15 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) ID, Drain Current (A) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd • Cds shorted Crss = Cgd Coss = Cds + Cgd Coss 10 000 100 6 0 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) 10 ID = 22 A 10.0 VDS = 480 V VDS = 300 V VDS = 120 V 8.0 6.0 4.0 2.0 0.0 0 10 20 30 40 50 60 70 80 90 100 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91373 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP22N60S www.vishay.com Vishay Siliconix 25 100 20 10 ID, Drain Current (A) ISD, Reverse Drain Current (A) 1000 TJ = 150 °C TJ = 25 °C 1 0.1 0.01 15 10 5 0.001 VGS = 0 V 0.0001 0.2 0.4 0.6 0.8 1 1.2 0 25 1.4 VSD, Source-to-Drain Voltage (V) 75 100 125 150 TC, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 725 VDS, Drain-to-Source Breakdown Voltage (V) 1000 ID, Drain Current (A) 50 Operation in this area limited by RDS(on)* 100 10 100 µs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 0.1 1 10 ms 10 100 1000 700 675 650 625 600 575 550 - 60 - 40 - 20 0 10 000 VDS, Drain-to-Source Voltage (V) 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature (°C) Fig. 8 - Maximum Safe Operating Area Fig. 10 - Drain-to-Source Breakdown Voltage normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 10-4 Single Pulse 10-3 10-2 0.1 1 Square Wave Pulse Duration (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case S15-0982-Rev. F, 27-Apr-15 Document Number: 91373 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP22N60S www.vishay.com Vishay Siliconix RD VDS QG VGS VGS D.U.T. Rg QGS + - VDD 10 V QGD VG Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Charge Fig. 12 - Switching Time Test Circuit Fig. 16 - Basic Gate Charge Waveform VDS Current regulator Same type as D.U.T. 90 % 50 kΩ 12 V 10 % VGS 0.2 µF 0.3 µF td(on) + td(off) tf tr D.U.T. Fig. 13 - Switching Time Waveforms - VDS VGS 3 mA L Vary tp to obtain required IAS VDS IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit D.U.T Rg + - I AS V DD 10 V 0.01 Ω tp Fig. 14 - Unclamped Inductive Test Circuit VDS tp VDD VDS IAS Fig. 15 - Unclamped Inductive Waveforms S15-0982-Rev. F, 27-Apr-15 Document Number: 91373 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP22N60S www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91373. S15-0982-Rev. F, 27-Apr-15 Document Number: 91373 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000