SiHP22N60S Datasheet

SiHP22N60S
www.vishay.com
Vishay Siliconix
S Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS at TJ max. (V)
• Generation one
650
RDS(on) max. at 25 °C (Ω)
VGS = 10 V
• High EAR capability
0.190
Qg max. (nC)
98
• Lower figure-of-merit Ron x Qg
Qgs (nC)
17
• 100 % avalanche tested
Qgd (nC)
25
• Ultra low Ron
Configuration
Single
• dV/dt ruggedness
• Ultra low gate charge (Qg)
D
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TO-220AB
APPLICATIONS
G
• PFC power supply stages
• Hard switching topologies
G
D
S
• Solar inverters
S
• UPS
N-Channel MOSFET
• Motor control
• Lighting
• Server telecom
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP22N60S-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
13
65
Single Pulse Avalanche Energy b
EAS
690
Repetitive Avalanche Energy a
EAR
25
PD
250
Maximum Power Dissipation
Drain-Source Voltage Slope
TO-220AB
TO-220AB
TJ = 125 °C
Reverse Diode dV/dt d
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c
2
dV/dt
TJ, Tstg
for 10 s
V
22
IDM
Linear Derating Factor
UNIT
37
5.3
-55 to +150
300
A
W/°C
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 7 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S15-0982-Rev. F, 27-Apr-15
Document Number: 91373
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP22N60S
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
TO-220AB
RthJA
-
62
Maximum Junction-to-Case (Drain)
TO-220AB
RthJC
-
0.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
VDS
VGS = 0 V, ID = 1 mA
600
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.70
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
VGS = ± 20 V
-
-
± 100
nA
μA
IGSS
IDSS
VGS = ± 30 V
-
-
±1
VDS = 600 V, VGS = 0 V
-
-
1
VDS = 600 V, VGS = 0 V, TJ = 150 °C
-
-
100
μA
-
0.160
0.190
Ω
gfs
VDS = 50 V, ID = 13 A
-
9.4
-
S
Input Capacitance
Ciss
2810
5620
Coss
296
1480
2960
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
562
Output Capacitance
6.6
33
66
Effective Output Capacitance
(Time Related)
Coss eff. (TR)a
155
-
Drain-Source On-State Resistance
Forward Transconductance a
RDS(on)
VGS = 10 V
ID = 11 A
Dynamic
VGS = 0 V
VDS = 0 V to 480 V
-
75
110
VGS = 10 V
ID = 22 A, VDS = 480 V
-
17
-
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
25
-
Turn-On Delay Time
td(on)
-
24
50
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VDD = 380 V, ID = 22 A,
Rg = 9.1 Ω, VGS = 10 V
-
68
100
-
77
115
-
59
90
f = 1 MHz, open drain
0.13
0.65
1.3
-
-
22
-
-
88
pF
nC
ns
Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IS = 22 A, VGS = 0 V
TJ = 25 °C, IF = IS,
dI/dt = 100 A/μs, VR = 25 V
S
-
-
1.2
V
-
462
690
ns
-
8.3
16
μC
-
30
60
A
Note
a. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
S15-0982-Rev. F, 27-Apr-15
Document Number: 91373
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP22N60S
www.vishay.com
Vishay Siliconix
ID, Drain Current (A)
50
VGS
Top 15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
5V
Bottom 4 V
40
30
20
10
TJ = 25 °C
4V
0
0
4
8
12
16
20
RDS(on), Drain-to-Source On Resistance
(Normalized)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
24
3.5
ID = 22 A
VGS = 10 V
3
2.5
2
1.5
1
0.5
0
- 60 - 40 - 20 0
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TJ = 25 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
100 000
VGS
Top 15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
5V
Bottom 4 V
18
12
Capacitance (pF)
ID, Drain Current (A)
30
24
Ciss
1000
Crss
TJ = 150 °C
4 .0 V
10
0
4
8
12
16
20
24
1
10
Fig. 2 - Typical Output Characteristics, TJ = 150 °C
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
60
12.0
VGS, Gate-to-Source Voltage (V)
TJ = 25 °C
50
40
30
20
TJ = 150 °C
10
0
2
4
6
8
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S15-0982-Rev. F, 27-Apr-15
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID, Drain Current (A)
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd • Cds shorted
Crss = Cgd
Coss = Cds + Cgd
Coss
10 000
100
6
0
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
10
ID = 22 A
10.0
VDS = 480 V
VDS = 300 V
VDS = 120 V
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
50
60 70
80
90 100
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91373
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP22N60S
www.vishay.com
Vishay Siliconix
25
100
20
10
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 150 °C
TJ = 25 °C
1
0.1
0.01
15
10
5
0.001
VGS = 0 V
0.0001
0.2
0.4
0.6
0.8
1
1.2
0
25
1.4
VSD, Source-to-Drain Voltage (V)
75
100
125
150
TC, Case Temperature (°C)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 9 - Maximum Drain Current vs. Case Temperature
725
VDS, Drain-to-Source Breakdown
Voltage (V)
1000
ID, Drain Current (A)
50
Operation in this area limited
by RDS(on)*
100
10
100 µs
1 ms
1
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
1
10 ms
10
100
1000
700
675
650
625
600
575
550
- 60 - 40 - 20 0
10 000
VDS, Drain-to-Source Voltage (V)
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
Fig. 8 - Maximum Safe Operating Area
Fig. 10 - Drain-to-Source Breakdown Voltage
normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
0.1
1
Square Wave Pulse Duration (s)
Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case
S15-0982-Rev. F, 27-Apr-15
Document Number: 91373
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP22N60S
www.vishay.com
Vishay Siliconix
RD
VDS
QG
VGS
VGS
D.U.T.
Rg
QGS
+
- VDD
10 V
QGD
VG
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Charge
Fig. 12 - Switching Time Test Circuit
Fig. 16 - Basic Gate Charge Waveform
VDS
Current regulator
Same type as D.U.T.
90 %
50 kΩ
12 V
10 %
VGS
0.2 µF
0.3 µF
td(on)
+
td(off) tf
tr
D.U.T.
Fig. 13 - Switching Time Waveforms
-
VDS
VGS
3 mA
L
Vary tp to obtain
required IAS
VDS
IG
ID
Current sampling resistors
Fig. 17 - Gate Charge Test Circuit
D.U.T
Rg
+
-
I AS
V DD
10 V
0.01 Ω
tp
Fig. 14 - Unclamped Inductive Test Circuit
VDS
tp
VDD
VDS
IAS
Fig. 15 - Unclamped Inductive Waveforms
S15-0982-Rev. F, 27-Apr-15
Document Number: 91373
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP22N60S
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 18 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91373.
S15-0982-Rev. F, 27-Apr-15
Document Number: 91373
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
E
DIM.
Q
H(1)
D
3
2
L(1)
1
M*
L
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.24
4.65
0.167
0.183
b
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
ØP
MILLIMETERS
c
0.36
0.61
0.014
0.024
D
14.33
15.85
0.564
0.624
E
9.96
10.52
0.392
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
L
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
ØP
3.53
3.94
0.139
0.155
Q
2.54
3.00
0.100
0.118
ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xi’an
Document Number: 66542
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000