PANASONIC MA4X160A

Switching Diodes
MA4X160A
Silicon epitaxial planar type
Unit : mm
For switching circuits
+ 0.2
2.8 − 0.3
+ 0.25
0.65 ± 0.15
0.65 ± 0.15
+ 0.1
■ Features
0.4 − 0.05
1.45
1.5 − 0.05
Unit
VR
80
V
VRRM
80
V
0.95
0.5
0.4 − 0.05
2
+ 0.1
0.16 − 0.06
0.6 − 0
0.2
+ 0.1
+ 0.1
0.8
0 to 0.1
1 : Cathode 1
2 : Anode 2
3 : Cathode 2
4 : Anode 1
Mini Type Package (4-pin)
Reverse voltage
Single
IF(AV)
100
mA
(DC)
Double
IF(AV)
75
mA/Unit
Repetitive peak
forward current
Single
IFRM
225
mA
Double
IFRM
170
mA/Unit
Single
IFSM
500
mA
Double
IFSM
375
mA/Unit
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Non-repetitive peak
forward surge current*
3
0.1 to 0.3
Rating
Repetitive peak reverse voltage
1
0.4 ± 0.2
Symbol
Reverse voltage (DC)
4
0.95
+ 0.2
2.9 − 0.05
+ 0.2
1.1 − 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter
1.9 ± 0.2
0.5 R
• Two isolated elements contained in one package, allowing highdensity mounting
• Centrosymmetrical wiring, allowing to free from the taping
direction
• Short reverse recovery time trr
• Small terminal capacitance, Ct
Marking Symbol: M1E
Internal Connection
4
1
3
2
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Reverse current (DC)
IR
VR = 75 V
Forward voltage (DC)
VF
IF = 100 mA
Reverse voltage (DC)
VR
IR = 100 µA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
Reverse recovery time*
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
Typ
Max
Unit
0.1
µA
0.95
1.2
V
0.9
2
pF
3
ns
80
V
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 · IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
MA4X160A
Switching Diodes
IR  V R
102
10
10
Ta = 125°C
1
75°C
25°C
− 20°C
10−1
10−2
0.2
0.4
0.6
0.8
1.0
1.0
Ta = 125°C
1
75°C
10−1
25°C
10−2
10−3
0
VF  Ta
1.2
Forward voltage VF (V)
102
Reverse current IR (µA)
Forward current IF (mA)
IF  VF
103
1.2
0
20
40
IF  T a
60
80
100
160
2
1
0.5
0.3
0
10
20
30
40
40
80
120
160
IF(surge)  tW
3
0.1
120
Ambient temperature Ta (°C)
2
0
1 000
f = 1 MHz
Ta = 25°C
0.2
80
−40
Ambient temperature Ta (°C)
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
Forward current IF (mA)
40 V
10−2
40
1 mA
Ct  VR
10−1
0
3 mA
0.4
0
120
5
−40
10 mA
0.1 mA
10
10
10−3
0.6
Reverse voltage VR (V)
102
VR = 80 V
0.8
0.2
Forward voltage VF (V)
1
IF = 100 mA
50
Reverse voltage VR (V)
60
Ta = 25°C
IF(surge)
300
tW
Non repetitive
100
30
10
3
1
0.3
0.1
0.03
0.1
0.3
1
3
Pulse width tW (ms)
10
30