SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS) • Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching • Compliant to RoHS Directive 2011/65/EU 450 RDS(on) max. at 25 °C () VGS = 10 V 0.17 Qg max. (nC) 88 Qgs (nC) 12 Qgd (nC) 23 Configuration Single D TO-220AB Note * Pb containing terminations are not RoHS compliant, exemptions may apply G G D S APPLICATIONS S • Consumer Electronics - Displays (LCD or Plasma TV) • Lighting • Industrial - Welding - Induction Heating - Motor Drives - Battery Chargers N-Channel MOSFET • SMPS ORDERING INFORMATION Package Lead (Pb)-free TO-220AB SiHP25N40D-E3 Lead (Pb)-free and Halogen-free SiHP25N40D-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage LIMIT VDS 400 VGS Gate-Source Voltage AC (f > 1 Hz) Continuous Drain Current (TJ = 150 °C) SYMBOL VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID IDM Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope TJ = 125 °C Reverse Diode dV/dtd Soldering Recommendations (Peak Temperature) for 10 s ± 30 UNIT V 30 25 16 A 78 2.2 W/°C EAS 556 mJ PD 278 W TJ, Tstg - 55 to + 150 °C dV/dt 24 0.6 300c V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 17 A. c. 1.6 mm from case. d. ISD ID, starting TJ = 25 °C. S12-0625-Rev. B, 26-Mar-12 Document Number: 91483 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP25N40D www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Case (Drain) RthJC - 0.45 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current VDS VGS = 0 V, ID = 250 μA 400 - - V VDS/TJ Reference to 25 °C, ID = 250 μA - 0.5 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V nA VGS = ± 30 V - - ± 100 VDS = 400 V, VGS = 0 V - - 1 VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 10 IGSS IDSS μA - 0.14 0.17 gfs VDS = 50 V, ID = 13 A - 7.4 - S Input Capacitance Ciss 1707 - Coss - 177 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output Capacitance Total Gate Charge Qg Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10 V ID = 13 A Dynamic VGS = 10 V 19 - 44 88 - 12 - - 23 - Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 21 42 tr - 57 86 - 40 80 - 37 74 - 1.8 - - - 24 - - 78 - - 1.2 V - 353 - ns - 4.4 - μC - 24 - A Rise Time Turn-Off Delay Time td(off) Fall Time tf Gate Input Resistance Rg ID = 13 A, VDS = 320 V - pF VDD = 320 V, ID = 13 A, VGS = 10 V, Rg = 24.6 f = 1 MHz, open drain nC ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM S12-0625-Rev. B, 26-Mar-12 MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 13 A, VGS = 0 V TJ = 25 °C, IF = IS = 13 A, dI/dt = 100 A/μs, VR = 20 V Document Number: 91483 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP25N40D www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 60 3 TJ = 25 °C RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 80 40 20 2.5 2 1.5 1 VGS = 10 V 0.5 0 - 60 - 40 - 20 0 0 0 5 15 20 Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature 10 000 TJ = 150 °C Ciss 30 20 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd 1000 Coss 100 Crss 10 10 5V 1 0 0 5 10 15 20 25 30 0 VDS, Drain-to-Source Voltage (V) 100 200 300 400 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 100 24 VGS, Gate-to-Source Voltage (V) ID, Drain-to-Source Current (A) 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V BOTTOM 6 V 40 30 VDS, Drain-to-Source Voltage (V) TOP 50 25 Capacitance (pF) ID, Drain-to-Source Current (A) 60 10 ID = 13 A 80 60 40 TJ = 150 °C 20 TJ = 25 °C VDS = 320 V VDS = 200 V VDS = 80 V 20 16 12 8 4 0 0 0 5 10 15 20 VDS, Drain-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S12-0625-Rev. B, 26-Mar-12 25 0 10 20 30 40 50 60 70 80 Qg, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 91483 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP25N40D www.vishay.com Vishay Siliconix 30 ISD, Reverse Drain Current (A) 100 24 ID, Drain Current (A) TJ = 150 °C TJ = 25 °C 10 1 18 12 6 VGS = 0 V 0 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 25 1.6 VSD, Source-Drain Voltage (V) 75 100 125 150 TJ, Case Temperature (°C) Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature 500 1000 Operation in this Area Limited by RDS(on) IDM = Limited 475 VDS, Drain-to-Source Brakdown Voltage (V) 100 ID, Drain Current (A) 50 100 μs 10 Limited by RDS(on)* 1 ms 1 10 ms 0.1 TC = 25 °C TJ = 150 °C Single Pulse 400 375 350 - 60 - 40 - 20 0 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 8 - Maximum Safe Operating Area Normalized Effective Transient Thermal Impedance 425 BVDSS Limited 0.01 1 450 Fig. 10 - Temperature vs. Drain-to-Source Voltage 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 Single Pulse 0.01 0.0001 0.02 0.001 0.01 0.1 1 Pulse Time (s) Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case S12-0625-Rev. B, 26-Mar-12 Document Number: 91483 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP25N40D www.vishay.com Vishay Siliconix RD VDS QG 10 V VGS D.U.T. RG QGS + - VDD QGD VG 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Charge Fig. 12 - Switching Time Test Circuit Fig. 16 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. VDS 90 % 50 kΩ 12 V 0.2 µF 0.3 µF + 10 % VGS D.U.T. td(on) td(off) tf tr - VDS VGS 3 mA Fig. 13 - Switching Time Waveforms IG ID Current sampling resistors Fig. 17 - Gate Charge Test Circuit L Vary tp to obtain required IAS VDS D.U.T RG + - IAS V DD 10 V 0.01 Ω tp Fig. 14 - Unclamped Inductive Test Circuit VDS tp VDD VDS IAS Fig. 15 - Unclamped Inductive Waveforms S12-0625-Rev. B, 26-Mar-12 Document Number: 91483 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP25N40D www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 18 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91483. S12-0625-Rev. B, 26-Mar-12 Document Number: 91483 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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