SiHG25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses Qgs (nC) 14 • Low gate charge (Qg) Qgd (nC) 25 • Avalanche energy rated (UIS) Configuration Single • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D APPLICATONS TO-247AC • Hard switched topologies • Power factor correction power supplies (PFC) G • Switch mode power supplies (SMPS) • Computing S D - PC silver box / ATX power supplies S G • Lighting N-Channel MOSFET - Two stage LED lighting ORDERING INFORMATION Package TO-247AC Lead (Pb)-free and Halogen-free SiHG25N50E-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID UNIT V 26 16 A IDM 50 0.2 W/°C Single Pulse Avalanche Energy b EAS 273 mJ Maximum Power Dissipation PD 250 W TJ, Tstg -55 to +150 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope VDS = 0 V to 80 % VDS Reverse Diode dV/dt d Soldering Recommendations (Peak Temperature) c dV/dt for 10 s 65 25 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4.4 A. c. 1.6 mm from case. d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. Maximum Junction-to-Ambient RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 0.5 S15-0278-Rev. C, 23-Feb-15 MAX. UNIT °C/W Document Number: 91627 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG25N50E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = 250 μA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ±1 VDS = 500 V, VGS = 0 V - - 1 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 25 - 0.125 0.145 Ω - 6.6 - S VGS = 10 V ID = 12 A VDS = 30 V, ID = 12 A μA Dynamic Input Capacitance Ciss VGS = 0 V, - 1980 - Output Capacitance Coss VDS = 100 V, - 105 - Reverse Transfer Capacitance Crss f = 1 MHz - 8 - Effective Output Capacitance, Energy Related a Co(er) - 105 - Effective Output Capacitance, Time Related b Co(tr) - 285 - - 57 86 - 14 - pF VDS = 0 V to 400 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 25 - Turn-On Delay Time td(on) - 19 38 tr - 36 72 - 57 86 - 29 58 - 0.56 - - - 12 S - - 50 TJ = 25 °C, IS = 16.5 A, VGS = 0 V - - 1.2 V - 338 - ns - 5.3 - μC - 29 - A Rise Time Turn-Off Delay Time td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 12 A, VDS = 400 V VDD = 400 V, ID = 12 A Rg = 9.1 Ω, VGS = 10 V f = 1 MHz, open drain nC ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 25 V Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS. b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS. S15-0278-Rev. C, 23-Feb-15 Document Number: 91627 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG25N50E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 50 40 ID = 12 A 30 20 10 0 2.5 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 5 10 15 20 25 30 -60 -40 -20 VDS, Drain-to-Source Voltage (V) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics 40 10 000 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V TJ = 150 °C Ciss 1000 C, Capacitance (pF) ID, Drain-to-Source Current (A) TOP 30 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) 20 Coss 100 Crss 10 10 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 1 0 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) 0 30 100 200 300 400 VDS, Drain-to-Source Voltage (V) 500 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 70 12 TJ = 25 °C 5000 10 50 8 Coss 40 Coss (pF) ID, Drain-to-Source Current (A) 60 TJ = 150 °C 30 Eoss 6 500 Eoss (μJ) ID, Drain-to-Source Current (A) 60 3.0 TJ = 25 °C RDS(on), Drain-to-Source On-Resistance (Normalized) 70 4 20 VDS = 28.6 V 2 10 0 0 5 10 15 20 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S15-0278-Rev. C, 23-Feb-15 25 50 0 0 100 200 300 400 500 VDS Fig. 6 - COSS and EOSS vs. VDS Document Number: 91627 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG25N50E www.vishay.com Vishay Siliconix 30 VDS = 400 V VDS = 250 V VDS = 100 V 20 24 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 24 16 12 8 0 0 20 40 60 80 Qg, Total Gate Charge (nC) 100 120 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 25 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 100 650 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 12 6 4 0 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain Voltage (V) Fig. 8 - Typical Source-Drain Diode Forward Voltage Operation in this Area Limited by RDS(on) 100 ID, Drain Current (A) 18 625 600 575 550 525 500 475 ID = 250 μA 450 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature IDM Limited 10 100 μs Limited by RDS(on)* 1 ms 1 10 ms 0.1 TC = 25 °C TJ = 150 °C Single Pulse BVDSS Limited 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S15-0278-Rev. C, 23-Feb-15 Document Number: 91627 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG25N50E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 Pulse Time (s) 0.1 1 Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ 12 V 0.2 µF 0.3 µF D.U.T RG + - IAS + V DD D.U.T. - VDS VGS 10 V tp 0.01 Ω 3 mA IG ID Current sampling resistors Fig. 15 - Unclamped Inductive Test Circuit S15-0278-Rev. C, 23-Feb-15 Fig. 18 - Gate Charge Test Circuit Document Number: 91627 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHG25N50E www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91627. S15-0278-Rev. C, 23-Feb-15 Document Number: 91627 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-247AC (High Voltage) A A 4 E B 3 R/2 E/2 7 ØP Ø k M DBM A2 S (Datum B) ØP1 A D2 Q 4 4 2xR (2) D1 D 1 2 4 D 3 Thermal pad 5 L1 C L A See view B 2 x b2 3xb 0.10 M C A M 4 E1 0.01 M D B M View A - A C 2x e A1 b4 Planting Lead Assignments 1. Gate 2. Drain 3. Source 4. Drain D DE (b1, b3, b5) Base metal E C (c) C c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B MILLIMETERS DIM. MIN. MAX. A 4.58 5.31 A1 2.21 2.59 A2 1.17 2.49 b 0.99 1.40 b1 0.99 1.35 b2 1.53 2.39 b3 1.65 2.37 b4 2.42 3.43 b5 2.59 3.38 c 0.38 0.86 c1 0.38 0.76 D 19.71 20.82 D1 13.08 ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971 INCHES MIN. MAX. 0.180 0.209 0.087 0.102 0.046 0.098 0.039 0.055 0.039 0.053 0.060 0.094 0.065 0.093 0.095 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.820 0.515 - DIM. D2 E E1 e Øk L L1 N ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 0.254 14.20 16.25 3.71 4.29 7.62 BSC 3.51 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.640 0.146 0.169 0.300 BSC 0.138 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEDEC outline TO-247 with exception of dimension c. 8. Xian and Mingxin actually photo. Revision: 01-Jul-13 Document Number: 91360 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000