SiHA12N50E Datasheet

SiHA12N50E
www.vishay.com
Vishay Siliconix
E Series Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Low figure-of-merit (FOM) Ron x Qg
550
RDS(on) max. at 25 °C (Ω)
VGS = 10 V
Qg max. (nC)
•
•
•
•
•
0.380
50
Qgs (nC)
6
Qgd (nC)
10
Configuration
Single
APPLICATIONS
D
Thin-Lead TO-220 FULLPAK
• Computing
- PC silver box / ATX power supplies
• Lighting
- Two stage LED lighting
• Consumer electronics
G
GD
S
Low input capacitance (Ciss)
Reduced switching and conduction losses
Low gate charge (Qg)
Avalanche energy rated (UIS)
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
• Applications using hard switched topologies
- Power factor correction (PFC)
- Two switch forward converter
- Flyback converter
• Switch mode power supplies (SMPS)
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Thin-Lead TO-220 FULLPAK
Lead (Pb)-free
SiHA12N50E-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
500
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C) e
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energy b
EAS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
VDS = 0 V to 80 % VDS
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature) c
for 10 s
UNIT
V
10.5
6.6
A
21
0.91
W/°C
103
mJ
PD
32
W
TJ, Tstg
-55 to +150
°C
dV/dt
70
27
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 2.7 A.
c. 1.6 mm from case.
d. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
e. Limited by maximum junction temperature.
S15-0278-Rev. B, 23-Feb-15
Document Number: 91637
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHA12N50E
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
65
Maximum Junction-to-Case (Drain)
RthJC
-
3.9
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
VDS
VGS = 0 V, ID = 250 μA
500
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = 1 mA
-
0.60
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
VGS = ± 20 V
-
-
± 100
nA
VGS = ± 30 V
-
-
±1
μA
VDS = 500 V, VGS = 0 V
-
-
1
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
10
Gate-Source Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
μA
-
0.330
0.380
Ω
gfs
VDS = 30 V, ID = 6 A
-
3.1
-
S
Input Capacitance
Ciss
886
-
Coss
-
52
-
Reverse Transfer Capacitance
Crss
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
-
Output Capacitance
-
6
-
Effective Output Capacitance, Energy
Related a
Co(er)
-
45
-
Effective Output Capacitance, Time
Related b
Co(tr)
-
131
-
-
25
50
-
6
-
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
VGS = 10 V
ID = 6 A
Dynamic
pF
VDS = 0 V to 400 V, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 10 V
ID = 6 A, VDS = 400 V
Gate-Drain Charge
Qgd
-
10
-
Turn-On Delay Time
td(on)
-
13
26
Rise Time
Turn-Off Delay Time
tr
td(off)
Fall Time
tf
Gate Input Resistance
Rg
nC
VDD = 400 V, ID = 6 A,
VGS = 10 V, Rg = 9.1 Ω
-
16
32
-
29
58
-
12
24
f = 1 MHz, open drain
-
0.92
-
-
-
10.5
S
-
-
21
TJ = 25 °C, IS = 7.5 A, VGS = 0 V
-
-
1.2
V
-
244
-
ns
-
2.5
-
μC
-
19
-
A
ns
Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = IS = 6 A,
dI/dt = 100 A/μs, VR = 25 V
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S15-0278-Rev. B, 23-Feb-15
Document Number: 91637
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHA12N50E
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
24
18
3.0
TJ = 25 °C
ID = 6 A
RDS(on), Drain-to-Source On-Resistance
(Normalized)
12
6
0
2.0
1.5
1.0
VGS = 10 V
0.5
0
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
30
- 60 - 40 - 20
Fig. 1 - Typical Output Characteristics
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
12
10 000
TJ = 150 °C
8
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
C, Capacitance (pF)
16
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
20
ID, Drain-to-Source Current (A)
2.5
100
Coss
Crss
10
4
0
1
0
5
10
15
20
25
VDS, Drain-to-Source Voltage (V)
30
Fig. 2 - Typical Output Characteristics
0
100
200
300
400
VDS, Drain-to-Source Voltage (V)
500
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
30
6
5000
5
TJ = 25 °C
20
4
Coss (pF)
ID, Drain-to-Source Current (A)
25
15
TJ = 150 °C
Eoss
Coss
3
500
10
Eoss (μJ)
ID, Drain-to-Source Current (A)
TOP
2
VDS = 30.4 V
5
1
0
50
0
5
10
15
20
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S15-0278-Rev. B, 23-Feb-15
25
0
0
100
200
300
400
500
VDS
Fig. 6 - Coss and Eoss vs. VDS
Document Number: 91637
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHA12N50E
www.vishay.com
Vishay Siliconix
12
VDS = 400 V
VDS = 250 V
VDS = 100 V
20
9
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
24
16
12
8
3
4
0
0
0
10
20
30
40
Qg, Total Gate Charge (nC)
50
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
25
50
75
100
125
TC, Case Temperature (°C)
150
Fig. 10 - Maximum Drain Current vs. Case Temperature
650
VDS, Drain-to-Source Breakdown Voltage (V)
100
ISD, Reverse Drain Current (A)
6
TJ = 150 °C
10
TJ = 25 °C
1
VGS = 0 V
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-Drain Voltage (V)
1.2
1.4
625
600
575
550
525
500
ID = 250 μA
475
- 60 - 40 - 20
0
20
40
60
80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Fig. 11 - Temperature vs. Drain-to-Source Voltage
100
Operation in this Area
Limited by RDS(on)
IDM Limited
ID, Drain Current (A)
10
100 μs
Limited by RDS(on)*
1
1 ms
0.1
10 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.01
1
BVDSS Limited
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S15-0278-Rev. B, 23-Feb-15
Document Number: 91637
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHA12N50E
www.vishay.com
Vishay Siliconix
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
VDD
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
QG
10 V
90 %
QGS
10 %
VGS
QGD
VG
td(on)
td(off) tf
tr
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
L
Vary tp to obtain
required IAS
Current regulator
Same type as D.U.T.
VDS
50 kΩ
D.U.T
RG
+
-
IAS
12 V
0.2 µF
0.3 µF
V DD
+
D.U.T.
10 V
tp
0.01 Ω
-
VDS
VGS
3 mA
Fig. 15 - Unclamped Inductive Test Circuit
IG
ID
Current sampling resistors
Fig. 18 - Gate Charge Test Circuit
S15-0278-Rev. B, 23-Feb-15
Document Number: 91637
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHA12N50E
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91637.
S15-0278-Rev. B, 23-Feb-15
Document Number: 91637
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220 FULLPAK Thin Lead
E
ØP
A
n
A2
d2
d3
d1
D
L2
L1
b2 x 3
bx3
A2
c
e
DIMENSIONS
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.30
4.70
0.169
0.185
A1
2.50
2.90
0.098
0.114
A2
2.50
2.70
0.098
0.106
b
0.60
0.80
0.024
0.031
b2
0.60
0.90
0.024
0.035
c
-
0.60
-
0.024
D
8.30
8.70
0.327
0.342
d1
14.70
15.30
0.579
0.602
d2
2.90
3.10
0.114
0.122
d3
3.40
3.60
0.134
0.142
E
9.70
10.30
0.382
0.406
e
2.50
2.70
0.098
0.106
0.543
L
13.40
13.80
0.528
L1
2.50
2.80
0.098
0.110
L2
-
1.20
-
0.047
n
6.05
6.15
0.238
0.242
ØP
3.00
3.40
0.118
0.134
ECN: X15-0319-Rev. B, 12-Oct-15
DWG: 6021
Revision: 12-Oct-15
1
Document Number: 62649
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000