SiHP25N60EFL Datasheet

SiHP25N60EFL
www.vishay.com
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode and
Low Gate Charge
FEATURES
PRODUCT SUMMARY
VDS (V) at TJ max.
• Reduced figure-of-merit (FOM): Ron x Qg
• Fast body diode MOSFET using E series
technology
• Reduced trr, Qrr, and IRRM
• Increased robustness due to low Qrr
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
650
RDS(on) typ. () at 25 °C
VGS = 10 V
0.127
Qg (Max.) (nC)
75
Qgs (nC)
17
Qgd (nC)
19
Configuration
Single
D
TO-220AB
APPLICATIONS
G
G
D
• Telecommunications
- Server and telecom power supplies
• Computing
- ATX power supplies
• Industrial
- Welding
- Induction heating
- Battery chargers
- Uninterruptible power supplies (UPS)
• Renewable energy
- String PV inverters
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free and Halogen-free
SiHP25N60EFL-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
± 30
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Current a
ID
UNIT
V
25
16
A
IDM
61
2
W/°C
Single Pulse Avalanche Energy b
EAS
353
mJ
Maximum Power Dissipation
PD
250
W
TJ, Tstg
-55 to +150
°C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
VDS = 0 V to 80 % VDS
Reverse Diode dV/dt d
Soldering Recommendations (Peak temperature) c
for 10 s
dV/dt
70
15
300
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 5 A.
c. 1.6 mm from case.
d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C.
S16-1230-Rev. A, 20-Jun-16
Document Number: 91811
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP25N60EFL
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Maximum Junction-to-Case (Drain)
RthJC
-
0.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
600
-
-
V
VDS/TJ
Reference to 25 °C, ID = 10 mA
-
0.69
-
V/°C
VGS(th)
VDS = VGS, ID = 250 μA
3.0
-
5.0
V
VGS = ± 20 V
-
-
± 100
nA
μA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 30 V
-
-
±1
VDS = 480 V, VGS = 0 V
-
-
1
VDS = 480 V, VGS = 0 V, TJ = 125 °C
-
-
500
-
0.127
0.146

-
11.3
-
S
VGS = 10 V
ID = 12.5 A
VDS = 30 V, ID = 12.5 A
μA
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
-
2274
-
Output Capacitance
Coss
VDS = 100 V,
-
137
-
Reverse Transfer Capacitance
Crss
f = 1 MHz
-
4
-
Effective Output Capacitance, Energy
Related a
Co(er)
-
79
-
Effective Output Capacitance, Time
Related b
Co(tr)
-
330
-
-
50
75
-
17
-
pF
VDS = 0 V to 480 V, VGS = 0 V
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
19
-
Turn-On Delay Time
td(on)
-
25
50
tr
VDD = 480 V, ID = 12.5 A,
Rg = 9.1 , VGS = 10 V
-
39
68
-
47
94
-
21
42
f = 1 MHz, open drain
0.4
0.7
1.4
-
-
25
S
-
-
61
TJ = 25 °C, IS = 12.5 A, VGS = 0 V
-
0.9
1.2
V
-
138
276
ns
-
0.8
1.6
μC
-
11
-
A
Rise Time
Turn-Off Delay Time
td(off)
Fall Time
tf
Gate Input Resistance
Rg
VGS = 10 V
ID = 12.5 A, VDS = 480 V
nC
ns

Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Reverse Recovery Current
IRRM
MOSFET symbol
showing the 
integral reverse
p - n junction diode
D
A
G
TJ = 25 °C, IF = IS =12.5 A,
dI/dt = 100 A/μs, VR = 25 V
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S16-1230-Rev. A, 20-Jun-16
Document Number: 91811
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP25N60EFL
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
40
ID = 12.5 A
RDS(on), Drain-to-Source On-Resistance
(Normalized)
ID, Drain-to-Source Current (A)
60
TJ = 25 °C
20
2.5
2.0
1.5
1.0
VGS = 10 V
0.5
0
0
0
5
10
15
VDS, Drain-to-Source Voltage (V)
-60 -40 -20
20
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 1 - Typical Output Characteristics
100 000
TOP
15 V
14 V
13 V
12 V
11 V
10 V
9V
8V
7V
6V
BOTTOM 5 V
30
24
TJ = 150 °C
10 000
Ciss
C, Capacitance (pF)
ID, Drain-to-Source Current (A)
36
18
12
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
1000
Coss
100
10
Crss
6
1
0
0
5
10
15
VDS, Drain-to-Source Voltage (V)
0
20
100
200
300
400
500
600
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 2 - Typical Output Characteristics
18
14
TJ = 25 °C
40
TJ = 150 °C
10
Coss
Eoss
8
500
Eoss (μJ)
12
Coss (pF)
ID, Drain-to-Source Current (A)
16
5000
60
6
20
4
2
VDS = 27.8 V
50
0
0
5
10
15
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
S16-1230-Rev. A, 20-Jun-16
20
0
0
100
200
300
VDS
400
500
600
Fig. 6 - COSS and EOSS vs. VDS
Document Number: 91811
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP25N60EFL
www.vishay.com
Vishay Siliconix
25
VDS = 480 V
VDS = 300 V
VDS = 120 V
20
20
ID, Drain Current (A)
VGS, Gate-to-Source Voltage (V)
24
16
12
8
15
10
5
4
0
0
0
20
40
60
80
Qg, Total Gate Charge (nC)
100
Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage
25
50
75
100
125
TC, Case Temperature (°C)
150
Fig. 10 - Maximum Drain Current vs. Case Temperature
VDS, Drain-to-Source Breakdown Voltage (V)
775
ISD, Reverse Drain Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
1
VGS = 0 V
0.1
0.2
0.4
0.6
0.8
1.0
VSD, Source-Drain Voltage (V)
1.2
1.4
Fig. 8 - Typical Source-Drain Diode Forward Voltage
Operation in this area
limited by RDS(on)
ID, Drain Current (A)
100
750
725
700
675
650
625
600
ID = 10 mA
575
-60 -40 -20
0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature
IDM limited
10
100 μs
Limited by RDS(on)*
1
1 ms
0.1
10 ms
TC = 25 °C
TJ = 150 °C
Single pulse
BVDSS limited
0.01
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Fig. 9 - Maximum Safe Operating Area
S16-1230-Rev. A, 20-Jun-16
Document Number: 91811
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP25N60EFL
www.vishay.com
Vishay Siliconix
1
Normalized Effective Transient
Thermal Impedance
Duty cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
Pulse Time (s)
Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case
RD
VDS
VDS
tp
VGS
VDD
D.U.T.
RG
+
- VDD
VDS
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
IAS
Fig. 13 - Switching Time Test Circuit
Fig. 16 - Unclamped Inductive Waveforms
VDS
QG
10 V
90 %
QGS
10 %
VGS
QGD
VG
td(on)
td(off) tf
tr
Charge
Fig. 14 - Switching Time Waveforms
Fig. 17 - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
L
Vary tp to obtain
required IAS
VDS
50 kΩ
12 V
0.2 µF
0.3 µF
D.U.T
RG
+
-
IAS
+
V DD
D.U.T.
-
VDS
VGS
10 V
tp
0.01 Ω
3 mA
IG
ID
Current sampling resistors
Fig. 15 - Unclamped Inductive Test Circuit
S16-1230-Rev. A, 20-Jun-16
Fig. 18 - Gate Charge Test Circuit
Document Number: 91811
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiHP25N60EFL
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
Rg
•
•
•
•
+
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor “D”
D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = 10 Va
D.U.T. lSD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
Inductor current
VDD
Body diode forward drop
Ripple ≤ 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Fig. 19 - For N-Channel










Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91811.
S16-1230-Rev. A, 20-Jun-16
Document Number: 91811
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000