VS-FA72SA50LC www.vishay.com Vishay Semiconductors Power MOSFET, 72 A FEATURES • • • • • • • SOT-227 Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device • Low drain to case capacitance • Low internal inductance • UL approved file E78996 • Designed for industrial level • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDSS 500 V RDS(on) 0.0615 ID 72 A Type Modules - MOSFET Package SOT-227 DESCRIPTION Third Generation Power MOSFETs from Vishay Semiconductors provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-227 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 600 W to 1000 W. The low thermal resistance of the SOT-227 contribute to its wide acceptance throughout the industry. ABSOLUTE MAXIMUM RATINGS PARAMETER Continuous drain current at VGS 10 V Pulsed drain current Power dissipation Gate to source voltage SYMBOL ID TEST CONDITIONS TC = 25 °C TC = 90 °C IDM (1) PD MAX. UNITS 72 52 A 228 TC = 25 °C 1136 TC = 90 °C 545 W VGS ± 20 V Single pulse avalanche energy EAS (2) 725 mJ Repetitive avalanche current IAR (1) 22 A Repetitive avalanche energy EAR (1) 120 mJ Peak diode recovery dV/dt dV/dt (3) 10 V/ns Operating junction and storage temperature range TJ, TStg -55 to +150 °C VISO 2.5 kV 1.3 Nm Insulation withstand voltage (AC-RMS) Mounting torque M4 screw, on terminals and heatsink Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 18) (2) Starting T = 25 °C, L = 500 μH, R = 2.4 , I J g AS = 57 A (see fig. 18) (3) I 57 A, dI /dt 200 A/μs, V SD F DD V(BR)DSS, TJ 150 °C Revision: 13-Aug-13 Document Number: 94782 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA72SA50LC www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS °C TJ, TStg - 55 - 150 Junction to case RthJC - - 0.11 Case to heatsink RthCS - 0.05 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - Junction and storage temperature range Flat, greased surface Weight Mounting torque Case style °C/W 1.3 (11.5) Nm (lbf.in) SOT-227 ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER Drain to source breakdown voltage Breakdown voltage temperature coefficient Static drain to source on-resistance Gate threshold voltage Forward transconductance Drain to source leakage current Gate to source forward leakage Gate to source reverse leakage Total gate charge SYMBOL V(BR)DSS V(BR)DSS/TJ RDS(on) (1) VGS(th) gfs IDSS IGSS Qg Gate to source charge Qgs Gate to drain ("Miller") charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time tr td(off) tf td(on) tr td(off) TEST CONDITIONS MIN. TYP. MAX. UNITS 500 - - V Reference to 25 °C, ID = 1 mA - 0.64 - V/°C VGS = 10 V, ID = 34 A - 61.5 80.0 m VGS = 0 V, ID = 1.0 mA 2.0 3.0 4.0 VDS = VGS, ID = 250 μA, TJ = 125 °C VDS = VGS, ID = 250 μA - 1.9 - VDS = 50 V, ID = 34 A - 52.5 - VDS = 500 V, VGS = 0 V - 0.5 50 VDS = 500 V, VGS = 0 V, TJ = 125 °C - 30 500 VDS = 500 V, VGS = 0 V, TJ = 150 °C - 0.2 3.0 VGS = 20 V - - 200 VGS = - 20 V - - - 200 ID = 60 A VDS = 400 V VGS = 10 V; see fig. 15 and 19 (1) - 225 338 - 51 77 - 98 147 VDD = 250 V ID = 60 A Rg = 2.4 L = 500 μH; diode used: 60APH06 VDD = 250 V ID = 60 A Rg = 2.4 L = 500 μH; diode used: 60APH06 - 134 - - 44 - - 150 - - 43 - - 135 - - 47 - - 160 - Fall time tf - 35 - Internal source inductance LS Between lead, and center of die contact - 5.0 - VGS = 0 V VDS = 25 V f = 1.0 MHz, see fig. 14 - 10 000 - - 1500 - - 50 - Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss V S μA mA nA nC ns ns nH pF Note (1) Pulse width 300 μs, duty cycle 2 % Revision: 13-Aug-13 Document Number: 94782 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA72SA50LC www.vishay.com Vishay Semiconductors SOURCE-DRAIN RATINGS AND CHARACTERISTICS PARAMETER SYMBOL Continuous source current (body diode) IS ISM (1) Pulsed source current (body diode) TEST CONDITIONS MIN. TYP. MAX. - - 72 - - 228 TJ = 25 °C, IS = 57 A, VGS = 0 V - 0.9 1.31 TJ = 125 °C, IS = 57 A, VGS = 0 V - 0.75 - - 660 - - 46 - A - 15 - μC - 880 - ns - 50 - A - 23 - μC D MOSFET symbol showing the integral reverse p-n junction diode. G UNITS A S Diode forward voltage VSD (2) Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Forward turn-on time ton TJ = 25 °C, IF = 50 A, dIF/dt = 100 A/μs (2) TJ = 125 °C, IF = 50 A, dIF/dt = 100 A/μs (2) V ns Intrinsic turn-on time is negligible (turn-on is dominated by LS + LD) 160 180 140 160 IDS - Drain-Source Current (A) Allowable Case Temperature (°C) Notes (1) Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) (2) Pulse width 300 μs, duty cycle 2 % 120 DC 100 80 60 40 20 VGS = 7 V VGS = 8 V VGS = 10 V 140 VGS = 12 V 120 VGS = 15 V 100 80 60 VGS = 6 V VGS = 5 V 40 20 0 0 0 20 40 60 80 0 100 2 IDS - Continuous Drain-Source Current (A) Fig. 3 - Typical Drain-to-Source Output Characteristics at TJ = 25 °C 110 100 10 TJ = 25 °C TJ = 150 °C 1 VGS = 10 V 0.1 0.1 VGS = 7 V VGS = 8 V 100 TJ = 125 °C IDS - Drain-to-Source Current (A) IDS - Continuous Drain-Source Current (A) Fig. 1 - Maximum DC MOSFET Drain-Source Current IDS (A) 4 6 8 10 12 14 16 18 20 VDS - Drain-to-Source Voltage (V) 90 VGS = 10 V 80 VGS = 12 V 70 VGS = 15 V 60 50 40 VGS = 6 V VGS = 5 V 30 20 10 0 1.0 VDS - Drain-to-Source Voltage (V) 10 Fig. 2 - Typical Drain-to-Source Output Characteristics 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain-to-Source Voltage (V) Fig. 4 - Typical Drain-to-Source Current Output Characteristics at TJ = 125 °C Revision: 13-Aug-13 Document Number: 94782 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA72SA50LC www.vishay.com Vishay Semiconductors 140 80 VGS = 7 V VGS = 8 V VGS = 10 V 70 VGS = 12 V 60 VGS = 15 V IDS - Drain-to-Source Current (A) 90 50 40 30 VGS = 6 V 20 VGS = 5 V 10 IDS - Drain-to-Source Current (A) 100 0 0 2 4 6 8 10 12 14 16 18 20 VDS - Drain-to-Source Voltage (V) TJ = 125 °C TJ = 150 °C 60 40 20 TJ = 25 °C 10 180 IDS - Drain-to-Source Current (A) ID = 60 A VGS = 10 V 160 140 120 100 80 1 TJ = 150 °C 0.1 TJ = 125 °C 0.01 0.001 TJ = 25 °C 0.0001 60 0.00001 40 0 0 20 40 60 80 100 120 140 160 TJ - Junction Temperature (°C) 100 200 300 400 500 600 VDS - Drain-to-Source Voltage (V) Fig. 9 - Typical MOSFET Zero Gate Voltage Drain Current 280 5 4.5 240 200 160 TJ = 150 °C TJ = 25 °C 120 80 TJ = 125 °C 0 VGSTH - Threshold Voltage (V) RDS(on) - Drain-to-Source On-Resistance (mΩ) 80 Fig. 8 - Typical MOSFET Transfer Characteristics 200 Fig. 6 - Typical Drain-to-Source On-Resistance vs. Temperature IFSD - Forward Source-to-Drain Current (A) 100 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 VGS - Gate-to-Source Voltage (V) Fig. 5 - Typical Drain-to-Source Current Output Characteristics at TJ = 150 °C 40 120 4 TJ = 25 °C 3.5 3 TJ = 125 °C 2.5 2 1.5 TJ = 150 °C 1 0.5 0 0.0 0.5 1.0 1.5 2.0 VFSD - Drain-to-Source Forward Voltage Drop Characteristics (V) Fig. 7 - Typical Body Diode Forward Voltage Drop Characteristics 0.20 0.40 0.60 ID (mA) 0.80 1.00 Fig. 10 - Typical MOSFET Threshold Voltage Revision: 13-Aug-13 Document Number: 94782 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA72SA50LC www.vishay.com Vishay Semiconductors 1 td(off) Switching Time (μs) Switching time (μs) 1 td(on) tf 0.1 td(on) td(off) tr 0.1 tf tr 0.01 0.01 0 10 20 30 40 50 60 Drain-to-source current - Ids (A) 70 0 Fig. 11 - Typical MOSFET Switching Time vs. IDS, TJ = 125 °C, VDD = 250 V, VGS = 10 V, L = 500 μH, RG = 2.4 Diode used: 60APH06 10 20 30 Rg (Ω) 40 50 60 Fig. 12 - Typical MOSFET Switching Time vs. Rg, TJ = 125 °C, IDS = 100 A, VDD = 250 V, VGS = 10 V, L = 500 μH Diode used: 60APH06 Z thJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 Notes: PDM 0.75 0.50 0.25 0.1 0.05 0.02 DC 0.01 0.001 0.00001 0.0001 t1 t2 1. Duty Cycle, D = t1 t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.01 0.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 13 - Maximum Thermal Impedance ZthJC Characteristics, MOSFET VGS Ciss Crss Coss C - Capacitance (pF) 12 000 20 = 0 V, f = 1 MHz = Cgs + Cgd, Cds SHORTED = Cgd = Cds + Cgd V GS - Gate-to-Source Voltage (V) 15 000 Ciss 9000 6000 Coss 3000 Crss 0 ID = 57 A 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 19 0 1 10 100 VDS - Drain-to-Source Voltage (V) Fig. 14 - Typical Capacitance vs. Drain-to-Source Voltage VDS = 400 V VDS = 250 V VDS = 100 V 0 60 120 180 240 300 Q g - Total Gate Charge (nC) 360 Fig. 15 - Typical Gate Charge vs. Gate-to-Source Voltage Revision: 13-Aug-13 Document Number: 94782 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA72SA50LC www.vishay.com Vishay Semiconductors 1000 ID - Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 μs 100 μs 10 1 ms TC = 25 °C TJ = 150 °C Single Pulse 1 1 10 10 ms 100 1000 10 000 V DS - Drain-to-Source Voltage (V) Fig. 16 - Maximum Safe Operating Area V(BR)DSS RD VDS tp VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % I AS Fig. 18b - Unclamped Inductive Waveforms Fig. 17a - Switching Time Test Circuit VDS QG 90% 10V QGS QGD VG 0% GS td(on) tr t d(off) tf Charge Fig. 19a - Basic Gate Charge Waveform Fig. 17b - Switching Time Waveforms Current regulator Same type as D.U.T. 50 KW .2 µF 12 V .3 µF 15 V D.U.T. L VDS + V - DS Driver VGS D.U.T RG IAS 20 V tp + - VDD 0.01 W Fig. 18a - Unclamped Inductive Test Circuit 3 mA A IG ID Current sampling resistors Fig. 19b - Gate Charge Test Circuit Revision: 13-Aug-13 Document Number: 94782 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA72SA50LC www.vishay.com Vishay Semiconductors + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 RG • • • • + dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - Device under test - VDD Fig. 19c - Peak Diode Recovery dV/dt Test Circuit Driver Gate Drive D= Period P.W. P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig. 20 - For N-Channel Power MOSFETs Revision: 13-Aug-13 Document Number: 94782 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FA72SA50LC www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- F A 72 S A 50 LC 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Power MOSFET 3 - A = Generation 3, MOSFET silicon die 4 - Current rating (72 = 72 A) 5 - Single switch 6 - Package indicator (SOT-227) 7 - Voltage rating (50 = 500 V) 8 - LC = Low charge CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) 3 (D) 2 (G) 4 (S) 1 (S) G (2) S (1-4) Lead Assignment Single switch S (S) (D) 4 3 1 2 (S) (G) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 13-Aug-13 Document Number: 94782 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note • Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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