New Product Si4776DY Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () Max. 30 0.016 at VGS = 10 V 11.9 0.020 at VGS = 4.5 V 10.6 • Halogen-free According to IEC 61249-2-21 Definition • SkyFETMonolithic TrenchFETPower MOSFET and Schottky Diode • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 5.5 nC SO-8 APPLICATIONS S 1 8 D S 2 7 D S 3 6 D G 4 5 D • Notebook System Power and Memory - Low Side D Schottky Diode G Top View N-Channel MOSFET Ordering Information: Si4776DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Limit 30 Gate-Source Voltage VGS ± 20 TC = 25 °C TC = 70 °C Continuous Drain Current (TJ = 150 °C) TA = 25 °C ID IDM TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C Single Pulse Avalanche Current L = 0.1 mH Single Pulse Avalanche Energy IS IAS EAS TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C 9.5 9.3b, c 7.5b, c 50 A 3.7 2.3b, c 10 5 mJ 4.1 PD TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range V 11.9 TA = 70 °C Pulsed Drain Current (t = 300 µs) Unit 2.6 2.5b, c 1.6b, c - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d t 10 s Symbol RthJA Typ. 40 Max. 50 Maximum Junction-to-Foot (Drain) Steady State RthJF 24 30 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 95 °C/W. Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = 1 mA 30 VGS(th) VDS = VGS, ID= 1 mA 1 IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On -State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea 2.3 ± 100 VDS = 30 V, VGS = 0 V 0.013 0.150 VDS = 30 V, VGS = 0 V, TJ = 100 °C 1 10 VGS = 10 V, ID = 10 A 0.013 0.016 VGS = 4.5 V, ID = 7 A 0.016 0.020 VDS = 15 V, ID = 10 A 30 VDS 5 V, VGS = 10 V RDS(on) gfs 30 V nA mA A S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 521 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 141 57 VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A 11.6 17.5 5.5 8.5 1.5 nC 1.9 f = 1 MHz td(on) VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1 tr td(off) 0.2 0.8 1.6 12 24 12 24 14 28 tf 8 16 td(on) 10 20 11 22 VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1 tr td(off) tf 11 22 6 12 ns Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 3.7 50 IS = 1 A IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.44 0.55 V 12 24 ns 4.5 9 nC 6.5 5.5 ns Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 10 VGS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 40 30 20 VGS = 3 V 6 TC = 25 °C 4 TC = - 55 °C 2 10 TC = 125 °C VGS = 2 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 2.0 4.0 Output Characteristics Transfer Characteristics 5.0 700 0.018 560 C - Capacitance (pF) VGS = 4.5 V 0.016 0.014 VGS = 10 V 0.012 Ciss 420 280 Coss Crss 140 0.010 0 0 10 20 30 40 0 50 5 ID - Drain Current (A) 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 1.8 ID = 10 A ID = 10 A RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 3.0 VGS - Gate-to-Source Voltage (V) 0.020 RDS(on) - On-Resistance (Ω) 1.0 VDS - Drain-to-Source Voltage (V) 8 VDS = 15 V 6 VDS = 20 V VDS = 10 V 4 2 0 0 2 4 6 8 Qg - Total Gate Charge (nC) 10 12 1.6 VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 On-Resistance vs. Junction Temperature www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.050 100 ID = 10 A 0.040 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.001 0.0 0.030 TJ = 125 °C 0.020 TJ = 25 °C 0.010 0.000 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 150 10-1 10-2 30 V 120 10-3 20 V 10 Power (W) IR - Reverse Current (A) 10 -4 90 60 10-5 10 V 30 10-6 10-7 0 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 Time (s) TJ - Temperature (°C) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient 100 IDM Limited 100 μs ID - Drain Current (A) 10 ID Limited 1 ms 1 10 ms Limited by RDS(on)* 100 ms 0.1 1s TC = 25 °C Single Pulse 0.01 0.01 10 s BVDSS Limited DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 15 ID - Drain Current (A) 12 9 6 3 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 5 2.0 4 1.6 3 1.2 Power (W) Power (W) Current Derating* 2 1 0.8 0.4 0 0.0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Foot 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product Si4776DY Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 95 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot ’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63316. www.vishay.com 6 Document Number: 63316 S11-1658-Rev. A, 15-Aug-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000