Si4642DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00375 at VGS = 10 V 34 0.0047 at VGS = 4.5 V 30 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • SkyFET® Monolithic TrenchFET® Power MOSFET and Schottky Diode • 100 % Rg and UIS Tested Qg (Typ.) 35.7 nC APPLICATIONS • Notebook CPU Core • Buck Converter • Synchronous Rectifier Switch SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D D Schottky Diode G Top View N-Channel MOSFET Ordering Information: Si4642DY-T1-E3 (Lead (Pb)-free) Si4642DY-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD V A 7 3.1b, c 45 101 7.8 5 mJ W 3.5b, c 2.2b, c - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit 22.7b, c 18b, c 70 IDM Pulsed Drain Current Continuous Source-Drain Diode Current Limit 30 ± 20 34 27 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Symbol RthJA RthJF Typ. 29 13 Max. 35 16 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 °C/W. Document Number: 74430 S09-0138-Rev. B, 02-Feb-09 www.vishay.com 1 Si4642DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = 1 mA 30 VGS(th) VDS = VGS, ID= 1 mA 1.5 IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On -State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea 3 ± 100 VDS = 30 V, VGS = 0 V 0.05 0.2 VDS = 30 V, VGS = 0 V, TJ = 100 °C 5.5 50 VGS = 10 V, ID = 20 A 0.0031 0.00375 VGS = 4.5 V, ID = 15 A 0.0039 0.0047 VDS = 15 V, ID = 20 A 108 VDS ≥ 5 V, VGS = 10 V RDS(on) gfs 40 V nA mA A Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 5540 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 790 346 VDS = 15 V, VGS = 10 V, ID = 20 A VDS = 15 V, VGS = 4.5 V, ID = 20 A 74 110 35.7 54 16.8 nC 10.7 f = 1 MHz 1.5 2.3 76 115 VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 4.5 V, RG = 1 Ω 180 270 53 80 tf 50 75 td(on) 17 26 24 36 td(on) tr td(off) VDD = 15 V, RL = 3 Ω ID ≅ 5 A, VGEN = 10 V, RG = 1 Ω tr td(off) tf 46 70 9 15 Ω ns Drain-Source Body Diode and Schottky Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 7 70 IS = 2 A IF = 13 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.44 0.53 V 36 55 ns 34 52 nC 19 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74430 S09-0138-Rev. B, 02-Feb-09 Si4642DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.2 70 VGS = 10 thru 4 V 1.0 I D - Drain Current (A) I D - Drain Current (A) 56 42 28 14 0.8 0.6 0.4 TC = 125 °C 0.2 25 °C 3V - 55 °C 0.0 0 0.0 0.5 1.0 1.5 2.0 0 2.5 1 2 4 5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 7000 0.0050 6000 Ciss 0.0045 C - Capacitance (pF) R D S(on) - On-Resistance (Ω) 3 VGS = 4.5 V 0.0040 VGS = 10 V 0.0035 5000 4000 3000 2000 0.0030 Coss 1000 Crss 0 0.0025 0 10 20 30 40 50 0 60 6 12 18 24 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 30 1.7 1.5 VDS = 10 V R D S(o n) - On-Resistance (Normalized) VG S - Gate-to-Source Voltage (V) ID = 20 A 8 6 VDS = 15 V VDS = 20 V 4 2 0 0 10 20 30 40 50 60 70 80 VGS = 4.5 V 1.3 VGS = 10 V 1.1 0.9 0.7 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 74430 S09-0138-Rev. B, 02-Feb-09 150 www.vishay.com 3 Si4642DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 0.015 RD S(on) - O n-Resistance (Ω) I S - Source Current (A) ID = 20 A TJ = 150 °C 10 TJ = 25 °C 1 0.009 125 °C 0.006 25 °C 0.003 0.000 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 6 7 8 9 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.1 200 0.01 160 10 30 V 0.001 Power (W) IR - Reverse (A) 0.1 0.0 0.012 10 V 20 V 0.0001 120 80 0.00001 40 0 0.001 0.000001 0 25 50 75 100 125 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Reverse Current (Schottky) 100 Limited by R DS(on)* ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TC = 25 °C Single Pulse 0.01 0.01 * VGS 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 74430 S09-0138-Rev. B, 02-Feb-09 Si4642DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 45 I D - Drain Current (A) 36 27 18 9 0 0 25 50 75 100 125 150 0 25 TC - Case Temperature (°C) 10 2.0 8 1.6 6 1.2 Power (W) Power (W) Current Derating* 4 2 0.8 0.4 0 0.0 0 25 50 75 100 125 150 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74430 S09-0138-Rev. B, 02-Feb-09 www.vishay.com 5 Si4642DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 0.05 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-3 10-2 10-1 10 1 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot ’Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74430. www.vishay.com 6 Document Number: 74430 S09-0138-Rev. 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